CH546461A - Speicherzelle fuer eine binaere speichermatrix oder ein binaeres schieberegister. - Google Patents

Speicherzelle fuer eine binaere speichermatrix oder ein binaeres schieberegister.

Info

Publication number
CH546461A
CH546461A CH529373A CH546461DA CH546461A CH 546461 A CH546461 A CH 546461A CH 529373 A CH529373 A CH 529373A CH 546461D A CH546461D A CH 546461DA CH 546461 A CH546461 A CH 546461A
Authority
CH
Switzerland
Prior art keywords
binary
memory
memory cell
sliding register
matrix
Prior art date
Application number
CH529373A
Other languages
German (de)
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH546461A publication Critical patent/CH546461A/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Led Devices (AREA)
  • Semiconductor Memories (AREA)
  • Facsimile Heads (AREA)
CH529373A 1972-04-25 1973-04-13 Speicherzelle fuer eine binaere speichermatrix oder ein binaeres schieberegister. CH546461A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24730072A 1972-04-25 1972-04-25

Publications (1)

Publication Number Publication Date
CH546461A true CH546461A (de) 1974-02-28

Family

ID=22934384

Family Applications (1)

Application Number Title Priority Date Filing Date
CH529373A CH546461A (de) 1972-04-25 1973-04-13 Speicherzelle fuer eine binaere speichermatrix oder ein binaeres schieberegister.

Country Status (10)

Country Link
JP (1) JPS5212073B2 (enrdf_load_html_response)
CA (1) CA1003106A (enrdf_load_html_response)
CH (1) CH546461A (enrdf_load_html_response)
DE (1) DE2319714A1 (enrdf_load_html_response)
ES (1) ES413258A1 (enrdf_load_html_response)
FR (1) FR2181850B1 (enrdf_load_html_response)
GB (1) GB1414228A (enrdf_load_html_response)
IT (1) IT979035B (enrdf_load_html_response)
NL (1) NL7305263A (enrdf_load_html_response)
SE (1) SE389573B (enrdf_load_html_response)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5428578A (en) * 1977-08-08 1979-03-03 Clarion Co Ltd Semiconductor memory
TWI230392B (en) 2001-06-18 2005-04-01 Innovative Silicon Sa Semiconductor device
EP1351307A1 (fr) * 2002-03-28 2003-10-08 Innovative Silicon SA Procédé de commande d'un dispositif semi-conducteur
EP1355316B1 (en) 2002-04-18 2007-02-21 Innovative Silicon SA Data storage device and refreshing method for use with such device
EP1357603A3 (en) 2002-04-18 2004-01-14 Innovative Silicon SA Semiconductor device
US7085153B2 (en) 2003-05-13 2006-08-01 Innovative Silicon S.A. Semiconductor memory cell, array, architecture and device, and method of operating same
US20040228168A1 (en) 2003-05-13 2004-11-18 Richard Ferrant Semiconductor memory device and method of operating same
US6912150B2 (en) 2003-05-13 2005-06-28 Lionel Portman Reference current generator, and method of programming, adjusting and/or operating same
US7335934B2 (en) 2003-07-22 2008-02-26 Innovative Silicon S.A. Integrated circuit device, and method of fabricating same
US7184298B2 (en) 2003-09-24 2007-02-27 Innovative Silicon S.A. Low power programming technique for a floating body memory transistor, memory cell, and memory array
US7476939B2 (en) 2004-11-04 2009-01-13 Innovative Silicon Isi Sa Memory cell having an electrically floating body transistor and programming technique therefor
US7251164B2 (en) 2004-11-10 2007-07-31 Innovative Silicon S.A. Circuitry for and method of improving statistical distribution of integrated circuits
US7301838B2 (en) 2004-12-13 2007-11-27 Innovative Silicon S.A. Sense amplifier circuitry and architecture to write data into and/or read from memory cells
US7301803B2 (en) 2004-12-22 2007-11-27 Innovative Silicon S.A. Bipolar reading technique for a memory cell having an electrically floating body transistor
US7606066B2 (en) 2005-09-07 2009-10-20 Innovative Silicon Isi Sa Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
US7355916B2 (en) 2005-09-19 2008-04-08 Innovative Silicon S.A. Method and circuitry to generate a reference current for reading a memory cell, and device implementing same
US7683430B2 (en) 2005-12-19 2010-03-23 Innovative Silicon Isi Sa Electrically floating body memory cell and array, and method of operating or controlling same
US7542345B2 (en) 2006-02-16 2009-06-02 Innovative Silicon Isi Sa Multi-bit memory cell having electrically floating body transistor, and method of programming and reading same
US7492632B2 (en) 2006-04-07 2009-02-17 Innovative Silicon Isi Sa Memory array having a programmable word length, and method of operating same
US7606098B2 (en) 2006-04-18 2009-10-20 Innovative Silicon Isi Sa Semiconductor memory array architecture with grouped memory cells, and method of controlling same
WO2007128738A1 (en) 2006-05-02 2007-11-15 Innovative Silicon Sa Semiconductor memory cell and array using punch-through to program and read same
US8069377B2 (en) 2006-06-26 2011-11-29 Micron Technology, Inc. Integrated circuit having memory array including ECC and column redundancy and method of operating the same
US7542340B2 (en) 2006-07-11 2009-06-02 Innovative Silicon Isi Sa Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
KR101277402B1 (ko) 2007-01-26 2013-06-20 마이크론 테크놀로지, 인코포레이티드 게이트형 바디 영역으로부터 격리되는 소스/드레인 영역을 포함하는 플로팅-바디 ｄｒａｍ 트랜지스터
US8518774B2 (en) 2007-03-29 2013-08-27 Micron Technology, Inc. Manufacturing process for zero-capacitor random access memory circuits
US8064274B2 (en) 2007-05-30 2011-11-22 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US8085594B2 (en) 2007-06-01 2011-12-27 Micron Technology, Inc. Reading technique for memory cell with electrically floating body transistor
WO2009039169A1 (en) 2007-09-17 2009-03-26 Innovative Silicon S.A. Refreshing data of memory cells with electrically floating body transistors
US8536628B2 (en) 2007-11-29 2013-09-17 Micron Technology, Inc. Integrated circuit having memory cell array including barriers, and method of manufacturing same
US8349662B2 (en) 2007-12-11 2013-01-08 Micron Technology, Inc. Integrated circuit having memory cell array, and method of manufacturing same
US8773933B2 (en) 2012-03-16 2014-07-08 Micron Technology, Inc. Techniques for accessing memory cells
US8014195B2 (en) 2008-02-06 2011-09-06 Micron Technology, Inc. Single transistor memory cell
US8189376B2 (en) 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
US7957206B2 (en) 2008-04-04 2011-06-07 Micron Technology, Inc. Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
US7947543B2 (en) 2008-09-25 2011-05-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US7933140B2 (en) 2008-10-02 2011-04-26 Micron Technology, Inc. Techniques for reducing a voltage swing
US7924630B2 (en) 2008-10-15 2011-04-12 Micron Technology, Inc. Techniques for simultaneously driving a plurality of source lines
US8223574B2 (en) 2008-11-05 2012-07-17 Micron Technology, Inc. Techniques for block refreshing a semiconductor memory device
US8213226B2 (en) 2008-12-05 2012-07-03 Micron Technology, Inc. Vertical transistor memory cell and array
US8319294B2 (en) 2009-02-18 2012-11-27 Micron Technology, Inc. Techniques for providing a source line plane
WO2010102106A2 (en) 2009-03-04 2010-09-10 Innovative Silicon Isi Sa Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
KR20120006516A (ko) 2009-03-31 2012-01-18 마이크론 테크놀로지, 인크. 반도체 메모리 디바이스를 제공하기 위한 기술들
US8139418B2 (en) 2009-04-27 2012-03-20 Micron Technology, Inc. Techniques for controlling a direct injection semiconductor memory device
US8508994B2 (en) 2009-04-30 2013-08-13 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US8498157B2 (en) 2009-05-22 2013-07-30 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8537610B2 (en) 2009-07-10 2013-09-17 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9076543B2 (en) 2009-07-27 2015-07-07 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8199595B2 (en) 2009-09-04 2012-06-12 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8174881B2 (en) 2009-11-24 2012-05-08 Micron Technology, Inc. Techniques for reducing disturbance in a semiconductor device
US8310893B2 (en) 2009-12-16 2012-11-13 Micron Technology, Inc. Techniques for reducing impact of array disturbs in a semiconductor memory device
US8416636B2 (en) 2010-02-12 2013-04-09 Micron Technology, Inc. Techniques for controlling a semiconductor memory device
US8411513B2 (en) 2010-03-04 2013-04-02 Micron Technology, Inc. Techniques for providing a semiconductor memory device having hierarchical bit lines
US8576631B2 (en) 2010-03-04 2013-11-05 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8369177B2 (en) 2010-03-05 2013-02-05 Micron Technology, Inc. Techniques for reading from and/or writing to a semiconductor memory device
EP3511982A1 (en) 2010-03-15 2019-07-17 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8411524B2 (en) 2010-05-06 2013-04-02 Micron Technology, Inc. Techniques for refreshing a semiconductor memory device
US8531878B2 (en) 2011-05-17 2013-09-10 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9559216B2 (en) 2011-06-06 2017-01-31 Micron Technology, Inc. Semiconductor memory device and method for biasing same

Also Published As

Publication number Publication date
NL7305263A (enrdf_load_html_response) 1973-10-29
ES413258A1 (es) 1976-01-01
DE2319714A1 (de) 1973-11-15
JPS5212073B2 (enrdf_load_html_response) 1977-04-04
SE389573B (sv) 1976-11-08
FR2181850B1 (enrdf_load_html_response) 1978-05-26
CA1003106A (en) 1977-01-04
JPS4922882A (enrdf_load_html_response) 1974-02-28
IT979035B (it) 1974-09-30
GB1414228A (en) 1975-11-19
FR2181850A1 (enrdf_load_html_response) 1973-12-07

Similar Documents

Publication Publication Date Title
CH546461A (de) Speicherzelle fuer eine binaere speichermatrix oder ein binaeres schieberegister.
BE774737A (fr) Cellule de memoire binaire
NL176719C (nl) Meervoudig toegankelijk informatiegeheugenarray.
BR7308199D0 (pt) Aperfeicoamentos em matriz de pelicula
NL153479B (nl) Dichromatisch thermografisch registreervel.
BR7306111D0 (pt) Aperfeicoamentos em leitura de cartoes
ES413614A0 (es) Perfeccionamientos introducidos en un elemento de almacena- miento de informacion adaptado para proporcionar variacion de capacitancia a un elemento captor.
CH554053A (de) Als vielfachschieberegister ausgefuehrter datenspeicher.
NL180685C (nl) Electrolysecel.
DK133541B (da) Elektrolytisk enhedscelle.
AR203076A1 (es) Celula de memoria no volatil
CA977835A (en) Counter with memory utilizing mnos memory elements
NL7309453A (nl) Geheugenmatrix.
CH534939A (de) In eine binäre Speichermatrix integrierbare Speicherzelle
NL180049B (nl) Rekeninrichting.
CH548519A (de) Ausstellvorrichtung fuer ein drehkippfenster oder eine drehkipptuer.
NL7408502A (nl) Geheugenmatrix.
NL161204C (nl) Elektrolysecel.
SE381003B (sv) Anordning for att stoda en kul- eller tunnformig typkropp i en skrivmaskin
CH554246A (de) Kalender.
IT941288B (it) Memoria a matrice di tipo capacitivo
CH530872A (de) Merkblattregister
NL175474B (nl) Geheugencel.
AT339073B (de) Magnetischer schieberegisterspeicher
BE796250A (fr) Reperage de la temperature dans un four a rayonnement

Legal Events

Date Code Title Description
PL Patent ceased