CH481487A - Mehrschichtiges, metallisiertes, auf der Oberfläche eines planaren Halbleiterkörpers angeordnetes Verbindungs- und Anschlussnetz - Google Patents
Mehrschichtiges, metallisiertes, auf der Oberfläche eines planaren Halbleiterkörpers angeordnetes Verbindungs- und AnschlussnetzInfo
- Publication number
- CH481487A CH481487A CH1247268A CH1247268A CH481487A CH 481487 A CH481487 A CH 481487A CH 1247268 A CH1247268 A CH 1247268A CH 1247268 A CH1247268 A CH 1247268A CH 481487 A CH481487 A CH 481487A
- Authority
- CH
- Switzerland
- Prior art keywords
- connection
- layer
- semiconductor body
- planar semiconductor
- metallized
- Prior art date
Links
Classifications
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US66811567A | 1967-09-15 | 1967-09-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH481487A true CH481487A (de) | 1969-11-15 |
Family
ID=24681078
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1247268A CH481487A (de) | 1967-09-15 | 1968-08-19 | Mehrschichtiges, metallisiertes, auf der Oberfläche eines planaren Halbleiterkörpers angeordnetes Verbindungs- und Anschlussnetz |
Country Status (7)
Country | Link |
---|---|
US (1) | US3461357A (es) |
CH (1) | CH481487A (es) |
DE (1) | DE1764951B1 (es) |
FR (1) | FR1578564A (es) |
GB (1) | GB1233466A (es) |
NL (1) | NL6812711A (es) |
SE (1) | SE351748B (es) |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4008484A (en) * | 1968-04-04 | 1977-02-15 | Fujitsu Ltd. | Semiconductor device having multilayered electrode structure |
US3879840A (en) * | 1969-01-15 | 1975-04-29 | Ibm | Copper doped aluminum conductive stripes and method therefor |
US3838442A (en) * | 1970-04-15 | 1974-09-24 | Ibm | Semiconductor structure having metallization inlaid in insulating layers and method for making same |
US3675092A (en) * | 1970-07-13 | 1972-07-04 | Signetics Corp | Surface controlled avalanche semiconductor device |
US3668484A (en) * | 1970-10-28 | 1972-06-06 | Rca Corp | Semiconductor device with multi-level metalization and method of making the same |
US4005472A (en) * | 1975-05-19 | 1977-01-25 | National Semiconductor Corporation | Method for gold plating of metallic layers on semiconductive devices |
JPS5851425B2 (ja) * | 1975-08-22 | 1983-11-16 | 株式会社日立製作所 | ハンドウタイソウチ |
US4035827A (en) * | 1976-04-29 | 1977-07-12 | Rca Corporation | Thermally ballasted semiconductor device |
FR2350697A1 (fr) * | 1976-05-06 | 1977-12-02 | Cii | Structure perfectionnee de circuits multicouches |
EP0042943A1 (en) * | 1980-07-02 | 1982-01-06 | International Business Machines Corporation | Multilayer integrated circuit substrate structure and process for making such structures |
US4307179A (en) * | 1980-07-03 | 1981-12-22 | International Business Machines Corporation | Planar metal interconnection system and process |
JPS6136946A (ja) * | 1984-07-30 | 1986-02-21 | Nec Corp | 半導体装置 |
US5159535A (en) * | 1987-03-11 | 1992-10-27 | International Business Machines Corporation | Method and apparatus for mounting a flexible film semiconductor chip carrier on a circuitized substrate |
US4788767A (en) * | 1987-03-11 | 1988-12-06 | International Business Machines Corporation | Method for mounting a flexible film semiconductor chip carrier on a circuitized substrate |
US5170931A (en) * | 1987-03-11 | 1992-12-15 | International Business Machines Corporation | Method and apparatus for mounting a flexible film semiconductor chip carrier on a circuitized substrate |
JPH0744188B2 (ja) * | 1989-04-28 | 1995-05-15 | 株式会社東海理化電機製作所 | バイポーラトランジスタ |
US5281684A (en) * | 1992-04-30 | 1994-01-25 | Motorola, Inc. | Solder bumping of integrated circuit die |
US5767580A (en) * | 1993-04-30 | 1998-06-16 | Lsi Logic Corporation | Systems having shaped, self-aligning micro-bump structures |
US5477086A (en) * | 1993-04-30 | 1995-12-19 | Lsi Logic Corporation | Shaped, self-aligning micro-bump structures |
US5468984A (en) * | 1994-11-02 | 1995-11-21 | Texas Instruments Incorporated | ESD protection structure using LDMOS diodes with thick copper interconnect |
US6388203B1 (en) | 1995-04-04 | 2002-05-14 | Unitive International Limited | Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structures formed thereby |
CN1179412C (zh) | 1995-04-05 | 2004-12-08 | 统一国际有限公司 | 具有伸长部分和展宽部分的焊料结构及其形成方法 |
US5789271A (en) * | 1996-03-18 | 1998-08-04 | Micron Technology, Inc. | Method for fabricating microbump interconnect for bare semiconductor dice |
US6078100A (en) | 1999-01-13 | 2000-06-20 | Micron Technology, Inc. | Utilization of die repattern layers for die internal connections |
EP1031873A3 (en) * | 1999-02-23 | 2005-02-23 | Sel Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US6710446B2 (en) * | 1999-12-30 | 2004-03-23 | Renesas Technology Corporation | Semiconductor device comprising stress relaxation layers and method for manufacturing the same |
JP3568869B2 (ja) * | 2000-02-28 | 2004-09-22 | シャープ株式会社 | 半導体集積回路装置及びその製造方法 |
DE60108413T2 (de) | 2000-11-10 | 2005-06-02 | Unitive Electronics, Inc. | Verfahren zum positionieren von komponenten mit hilfe flüssiger antriebsmittel und strukturen hierfür |
JP3526548B2 (ja) * | 2000-11-29 | 2004-05-17 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
US6863209B2 (en) | 2000-12-15 | 2005-03-08 | Unitivie International Limited | Low temperature methods of bonding components |
US6577002B1 (en) * | 2001-11-29 | 2003-06-10 | Sun Microsystems, Inc. | 180 degree bump placement layout for an integrated circuit power grid |
US7547623B2 (en) | 2002-06-25 | 2009-06-16 | Unitive International Limited | Methods of forming lead free solder bumps |
US7531898B2 (en) | 2002-06-25 | 2009-05-12 | Unitive International Limited | Non-Circular via holes for bumping pads and related structures |
AU2003256360A1 (en) * | 2002-06-25 | 2004-01-06 | Unitive International Limited | Methods of forming electronic structures including conductive shunt layers and related structures |
TWI225899B (en) | 2003-02-18 | 2005-01-01 | Unitive Semiconductor Taiwan C | Etching solution and method for manufacturing conductive bump using the etching solution to selectively remove barrier layer |
US7049216B2 (en) * | 2003-10-14 | 2006-05-23 | Unitive International Limited | Methods of providing solder structures for out plane connections |
TW200603698A (en) | 2004-04-13 | 2006-01-16 | Unitive International Ltd | Methods of forming solder bumps on exposed metal pads and related structures |
US20060205170A1 (en) * | 2005-03-09 | 2006-09-14 | Rinne Glenn A | Methods of forming self-healing metal-insulator-metal (MIM) structures and related devices |
US7932615B2 (en) | 2006-02-08 | 2011-04-26 | Amkor Technology, Inc. | Electronic devices including solder bumps on compliant dielectric layers |
US7674701B2 (en) | 2006-02-08 | 2010-03-09 | Amkor Technology, Inc. | Methods of forming metal layers using multi-layer lift-off patterns |
EP1837910A1 (fr) * | 2006-03-21 | 2007-09-26 | Stmicroelectronics Sa | Puce de circuits integrés à plots externes decalés et procédé de fabrication d'une telle puce. |
JP2008258499A (ja) * | 2007-04-06 | 2008-10-23 | Sanyo Electric Co Ltd | 電極構造及び半導体装置 |
US8304909B2 (en) * | 2007-12-19 | 2012-11-06 | Intel Corporation | IC solder reflow method and materials |
US7928534B2 (en) * | 2008-10-09 | 2011-04-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bond pad connection to redistribution lines having tapered profiles |
US7956442B2 (en) * | 2008-10-09 | 2011-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside connection to TSVs having redistribution lines |
US8736050B2 (en) | 2009-09-03 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Front side copper post joint structure for temporary bond in TSV application |
US8759949B2 (en) * | 2009-04-30 | 2014-06-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer backside structures having copper pillars |
US8158489B2 (en) | 2009-06-26 | 2012-04-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Formation of TSV backside interconnects by modifying carrier wafers |
US8174124B2 (en) | 2010-04-08 | 2012-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dummy pattern in wafer backside routing |
US8492892B2 (en) | 2010-12-08 | 2013-07-23 | International Business Machines Corporation | Solder bump connections |
US9698079B2 (en) * | 2014-01-03 | 2017-07-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Barrier structures between external electrical connectors |
US10276402B2 (en) * | 2016-03-21 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor package and manufacturing process thereof |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3241931A (en) * | 1963-03-01 | 1966-03-22 | Rca Corp | Semiconductor devices |
US3290753A (en) * | 1963-08-19 | 1966-12-13 | Bell Telephone Labor Inc | Method of making semiconductor integrated circuit elements |
US3290565A (en) * | 1963-10-24 | 1966-12-06 | Philco Corp | Glass enclosed, passivated semiconductor with contact means of alternate layers of chromium, silver and chromium |
US3266127A (en) * | 1964-01-27 | 1966-08-16 | Ibm | Method of forming contacts on semiconductors |
US3290570A (en) * | 1964-04-28 | 1966-12-06 | Texas Instruments Inc | Multilevel expanded metallic contacts for semiconductor devices |
US3409809A (en) * | 1966-04-06 | 1968-11-05 | Irc Inc | Semiconductor or write tri-layered metal contact |
-
1967
- 1967-09-15 US US668115A patent/US3461357A/en not_active Expired - Lifetime
-
1968
- 1968-08-19 CH CH1247268A patent/CH481487A/de not_active IP Right Cessation
- 1968-08-19 FR FR1578564D patent/FR1578564A/fr not_active Expired
- 1968-09-06 NL NL6812711A patent/NL6812711A/xx unknown
- 1968-09-11 DE DE19681764951 patent/DE1764951B1/de active Pending
- 1968-09-12 GB GB1233466D patent/GB1233466A/en not_active Expired
- 1968-09-13 SE SE12356/68A patent/SE351748B/xx unknown
Also Published As
Publication number | Publication date |
---|---|
DE1764951B1 (de) | 1972-03-16 |
NL6812711A (es) | 1969-03-18 |
SE351748B (es) | 1972-12-04 |
US3461357A (en) | 1969-08-12 |
GB1233466A (es) | 1971-05-26 |
FR1578564A (es) | 1969-08-14 |
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Legal Events
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PL | Patent ceased |