CH480869A - Verfahren zum Herstellen von monokristallinem Siliziumkarbid und dessen Verwendung - Google Patents
Verfahren zum Herstellen von monokristallinem Siliziumkarbid und dessen VerwendungInfo
- Publication number
- CH480869A CH480869A CH1237266A CH1237266A CH480869A CH 480869 A CH480869 A CH 480869A CH 1237266 A CH1237266 A CH 1237266A CH 1237266 A CH1237266 A CH 1237266A CH 480869 A CH480869 A CH 480869A
- Authority
- CH
- Switzerland
- Prior art keywords
- silicon carbide
- monocrystalline silicon
- producing monocrystalline
- producing
- carbide
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/135—Removal of substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/148—Silicon carbide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US48334065A | 1965-08-27 | 1965-08-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH480869A true CH480869A (de) | 1969-11-15 |
Family
ID=23919666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1237266A CH480869A (de) | 1965-08-27 | 1966-08-26 | Verfahren zum Herstellen von monokristallinem Siliziumkarbid und dessen Verwendung |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3463666A (h) |
| CH (1) | CH480869A (h) |
| DE (1) | DE1282621B (h) |
| GB (1) | GB1115237A (h) |
| NL (1) | NL6612035A (h) |
| SE (1) | SE309969B (h) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5200157A (en) * | 1986-02-17 | 1993-04-06 | Toshiba Ceramics Co., Ltd. | Susceptor for vapor-growth deposition |
| DE4121798A1 (de) * | 1991-07-02 | 1993-01-14 | Daimler Benz Ag | Mehrschichtige, monokristallines siliziumkarbid enthaltene zusammensetzung |
| JP3296998B2 (ja) * | 1997-05-23 | 2002-07-02 | 日本ピラー工業株式会社 | 単結晶ＳｉＣおよびその製造方法 |
| US8541769B2 (en) | 2010-11-09 | 2013-09-24 | International Business Machines Corporation | Formation of a graphene layer on a large substrate |
| US20120112198A1 (en) * | 2010-11-09 | 2012-05-10 | International Business Machines Corporation | Epitaxial growth of silicon carbide on sapphire |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2962388A (en) * | 1954-03-12 | 1960-11-29 | Metallgesellschaft Ag | Process for the production of titanium carbide coatings |
| DE1061593B (de) * | 1956-06-25 | 1959-07-16 | Siemens Ag | Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke |
| GB888844A (en) * | 1957-08-28 | 1962-02-07 | Paul August Franz Baumert | Process for obtaining fluorine compounds |
| DE1047180B (de) * | 1958-04-03 | 1958-12-24 | Wacker Chemie Gmbh | Verfahren zur Herstellung von sehr reinem kristallinem Siliciumcarbid |
| NL244520A (h) * | 1958-10-23 | |||
| US3011912A (en) * | 1959-12-22 | 1961-12-05 | Union Carbide Corp | Process for depositing beta silicon carbide |
-
1965
- 1965-08-27 US US483340A patent/US3463666A/en not_active Expired - Lifetime
-
1966
- 1966-07-21 DE DED50644A patent/DE1282621B/de active Pending
- 1966-08-02 SE SE10514/66A patent/SE309969B/xx unknown
- 1966-08-16 GB GB36643/66A patent/GB1115237A/en not_active Expired
- 1966-08-26 NL NL6612035A patent/NL6612035A/xx unknown
- 1966-08-26 CH CH1237266A patent/CH480869A/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| SE309969B (h) | 1969-04-14 |
| US3463666A (en) | 1969-08-26 |
| DE1282621B (de) | 1969-09-11 |
| NL6612035A (h) | 1967-02-28 |
| GB1115237A (en) | 1968-05-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |