CH476397A - Mehrschichtiger, lötfähiger elektrischer Anschluss an einer Halbleiterzone - Google Patents

Mehrschichtiger, lötfähiger elektrischer Anschluss an einer Halbleiterzone

Info

Publication number
CH476397A
CH476397A CH1003168A CH1003168A CH476397A CH 476397 A CH476397 A CH 476397A CH 1003168 A CH1003168 A CH 1003168A CH 1003168 A CH1003168 A CH 1003168A CH 476397 A CH476397 A CH 476397A
Authority
CH
Switzerland
Prior art keywords
layer
electrical connection
semiconductor zone
solderable electrical
solderable
Prior art date
Application number
CH1003168A
Other languages
German (de)
English (en)
Inventor
Joseph Herdzik Richard
Leff Jerry
George Shepheard Robert
Paul Sopher Raeman
Anthony Totta Paul
Edward Vandersea John
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH476397A publication Critical patent/CH476397A/de

Links

Classifications

    • H10P95/00—
    • H10W72/012—
    • H10W72/019—
    • H10W72/20—
    • H10W72/251—
    • H10W72/252—
    • H10W72/923—
    • H10W72/952—
CH1003168A 1967-07-13 1968-07-04 Mehrschichtiger, lötfähiger elektrischer Anschluss an einer Halbleiterzone CH476397A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65312867A 1967-07-13 1967-07-13

Publications (1)

Publication Number Publication Date
CH476397A true CH476397A (de) 1969-07-31

Family

ID=24619594

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1003168A CH476397A (de) 1967-07-13 1968-07-04 Mehrschichtiger, lötfähiger elektrischer Anschluss an einer Halbleiterzone

Country Status (6)

Country Link
BE (1) BE717095A (enExample)
CH (1) CH476397A (enExample)
DE (1) DE1764572A1 (enExample)
ES (1) ES355851A1 (enExample)
FR (1) FR1569479A (enExample)
GB (1) GB1173117A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3209666A1 (de) * 1981-03-23 1982-11-11 General Electric Co., Schenectady, N.Y. Halbleitervorrichtung und verfahren zum herstellen eines aufbaumetallkontaktes derselben

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3821785A (en) * 1972-03-27 1974-06-28 Signetics Corp Semiconductor structure with bumps
IT1075077B (it) * 1977-03-08 1985-04-22 Ates Componenti Elettron Metodo pr realizzare contatti su semiconduttori
US4307179A (en) * 1980-07-03 1981-12-22 International Business Machines Corporation Planar metal interconnection system and process
FR2531302A1 (fr) * 1982-07-30 1984-02-03 Xerox Corp Procedes de formation d'un circuit electrique a haute densite et d'elements d'interconnexion pour le circuit
IT1215268B (it) * 1985-04-26 1990-01-31 Ates Componenti Elettron Apparecchio e metodo per il confezionamento perfezionato di dispositivi semiconduttori.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3209666A1 (de) * 1981-03-23 1982-11-11 General Electric Co., Schenectady, N.Y. Halbleitervorrichtung und verfahren zum herstellen eines aufbaumetallkontaktes derselben

Also Published As

Publication number Publication date
ES355851A1 (es) 1970-03-16
BE717095A (enExample) 1968-12-02
FR1569479A (enExample) 1969-05-30
GB1173117A (en) 1969-12-03
DE1764572A1 (de) 1971-03-04

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Legal Events

Date Code Title Description
PL Patent ceased