CH456773A - Halbleiterbauelement - Google Patents
HalbleiterbauelementInfo
- Publication number
- CH456773A CH456773A CH21665A CH21665A CH456773A CH 456773 A CH456773 A CH 456773A CH 21665 A CH21665 A CH 21665A CH 21665 A CH21665 A CH 21665A CH 456773 A CH456773 A CH 456773A
- Authority
- CH
- Switzerland
- Prior art keywords
- base
- semiconductor
- junction
- emitter
- collector
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 70
- 239000002184 metal Substances 0.000 claims description 43
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 230000007704 transition Effects 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 2
- 230000001419 dependent effect Effects 0.000 claims 4
- 239000011253 protective coating Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 238000000576 coating method Methods 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US34249564A | 1964-02-04 | 1964-02-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH456773A true CH456773A (de) | 1968-07-31 |
Family
ID=23342075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH21665A CH456773A (de) | 1964-02-04 | 1965-01-08 | Halbleiterbauelement |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE656774A (en)) |
| CH (1) | CH456773A (en)) |
| ES (1) | ES308304A1 (en)) |
| NL (1) | NL6413894A (en)) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3463977A (en) * | 1966-04-21 | 1969-08-26 | Fairchild Camera Instr Co | Optimized double-ring semiconductor device |
| US3423606A (en) * | 1966-07-21 | 1969-01-21 | Gen Instrument Corp | Diode with sharp reverse-bias breakdown characteristic |
| US3432731A (en) * | 1966-10-31 | 1969-03-11 | Fairchild Camera Instr Co | Planar high voltage four layer structures |
| DE3141203A1 (de) * | 1981-10-16 | 1983-04-28 | Siemens AG, 1000 Berlin und 8000 München | Planares halbleiterbauelement |
| DE3201545A1 (de) * | 1982-01-20 | 1983-07-28 | Robert Bosch Gmbh, 7000 Stuttgart | Planare halbleiteranordnung |
| DE3227536A1 (de) * | 1982-01-20 | 1983-07-28 | Robert Bosch Gmbh, 7000 Stuttgart | Darlington-transistorschaltung |
| WO1995004374A1 (en) * | 1993-07-29 | 1995-02-09 | Siemens Components, Inc. | A reverse field plate, junction-terminating structure |
| US5750414A (en) * | 1993-09-29 | 1998-05-12 | Siemens Components, Inc. | Method of fabricating a semiconductor device |
-
1964
- 1964-11-30 NL NL6413894A patent/NL6413894A/xx unknown
- 1964-12-07 BE BE656774A patent/BE656774A/xx unknown
-
1965
- 1965-01-08 CH CH21665A patent/CH456773A/de unknown
- 1965-01-19 ES ES0308304A patent/ES308304A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| ES308304A1 (es) | 1965-04-16 |
| BE656774A (en)) | 1965-04-01 |
| NL6413894A (en)) | 1965-08-05 |
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