CH449123A - Electronic component contacted with at least one connection electrode - Google Patents

Electronic component contacted with at least one connection electrode

Info

Publication number
CH449123A
CH449123A CH1102766A CH1102766A CH449123A CH 449123 A CH449123 A CH 449123A CH 1102766 A CH1102766 A CH 1102766A CH 1102766 A CH1102766 A CH 1102766A CH 449123 A CH449123 A CH 449123A
Authority
CH
Switzerland
Prior art keywords
electrode
electronic component
wafer
connection electrode
july
Prior art date
Application number
CH1102766A
Other languages
German (de)
Inventor
Heller Anton
Elmar Dipl Ing Mueller
Klaus Dipl Ing Weimann
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Publication of CH449123A publication Critical patent/CH449123A/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004Wire welding
    • B23K20/005Capillary welding
    • B23K20/007Ball bonding
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    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
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    • H01L2224/05638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
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    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)

Abstract

1,139,035. Welding by pressure. BROWN, BOVERI & CO. Ltd. 29 July, 1966 [31 July, 1965], No. 34268/66. Heading B3R. [Also in Division H1] As shown, an electrode 2 having an enlarged head 3 is ultrasonically welded to a semiconductor wafer 1 by means of a hollow sonotrode 4. The electrode 2 is produced by passing an aluminium wire through the sonotrode 4 and forming the head 3 by melting or by cold deformation. Wafer 1 may be of N-type or P- type silicon, the resulting contacts being rectifying or ohmic respectively. The electrode may be welded to or through a thin metal coating of, for example, nickel or gold on the wafer, or through a coat of protective paint.
CH1102766A 1965-07-31 1966-07-29 Electronic component contacted with at least one connection electrode CH449123A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEB0083087 1965-07-31

Publications (1)

Publication Number Publication Date
CH449123A true CH449123A (en) 1967-12-31

Family

ID=6981800

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1102766A CH449123A (en) 1965-07-31 1966-07-29 Electronic component contacted with at least one connection electrode

Country Status (3)

Country Link
CH (1) CH449123A (en)
DE (1) DE1489701A1 (en)
GB (1) GB1139035A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005045100A1 (en) 2005-09-21 2007-03-29 Infineon Technologies Ag Method for producing a power semiconductor module

Also Published As

Publication number Publication date
GB1139035A (en) 1969-01-08
DE1489701A1 (en) 1969-06-12

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