CH389785A - Gekapselte Halbleiterdiode - Google Patents

Gekapselte Halbleiterdiode

Info

Publication number
CH389785A
CH389785A CH7562A CH7562A CH389785A CH 389785 A CH389785 A CH 389785A CH 7562 A CH7562 A CH 7562A CH 7562 A CH7562 A CH 7562A CH 389785 A CH389785 A CH 389785A
Authority
CH
Switzerland
Prior art keywords
semiconductor diode
encapsulated semiconductor
encapsulated
diode
semiconductor
Prior art date
Application number
CH7562A
Other languages
English (en)
Inventor
Heslop Forster John
Township Warren
Franklin Grandner John
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH389785A publication Critical patent/CH389785A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185Joining of semiconductor bodies for junction formation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/06Containers; Seals characterised by the material of the container or its electrical properties
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
CH7562A 1961-01-16 1962-01-04 Gekapselte Halbleiterdiode CH389785A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US82895A US3116443A (en) 1961-01-16 1961-01-16 Semiconductor device

Publications (1)

Publication Number Publication Date
CH389785A true CH389785A (de) 1965-03-31

Family

ID=22174140

Family Applications (1)

Application Number Title Priority Date Filing Date
CH7562A CH389785A (de) 1961-01-16 1962-01-04 Gekapselte Halbleiterdiode

Country Status (8)

Country Link
US (1) US3116443A (de)
BE (1) BE612543A (de)
CH (1) CH389785A (de)
DE (1) DE1300165B (de)
ES (1) ES273893A1 (de)
FR (1) FR1307591A (de)
GB (1) GB992963A (de)
NL (2) NL270369A (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL297002A (de) * 1962-08-23 1900-01-01
US3331995A (en) * 1964-02-25 1967-07-18 Hughes Aircraft Co Housed semiconductor device with thermally matched elements
US3388301A (en) * 1964-12-09 1968-06-11 Signetics Corp Multichip integrated circuit assembly with interconnection structure
US3297921A (en) * 1965-04-15 1967-01-10 Int Rectifier Corp Controlled rectifier having shunted emitter formed by a nickel layer underneath an aluminum layer
US3521128A (en) * 1967-08-02 1970-07-21 Rca Corp Microminiature electrical component having integral indexing means
DE2855972C2 (de) * 1978-12-23 1984-09-27 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiteranordnung mit zwei integrierten und antiparallel geschalteten Dioden sowie Verfahren zu ihrer Herstellung
GB2096564A (en) * 1981-04-10 1982-10-20 Shionogi Seiyaku Kk Vial
US5416354A (en) * 1989-01-06 1995-05-16 Unitrode Corporation Inverted epitaxial process semiconductor devices
ATE166493T1 (de) * 1992-01-27 1998-06-15 Harris Corp Halbleitervorrichtung mit einem halbleitersubstrat und einer keramischen scheibe als decke

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2874340A (en) * 1953-06-26 1959-02-17 Sprague Electric Co Rectifying contact
US2789258A (en) * 1955-06-29 1957-04-16 Raytheon Mfg Co Intrinsic coatings for semiconductor junctions
NL101253C (de) * 1955-09-12
US2863105A (en) * 1955-11-10 1958-12-02 Hoffman Electronics Corp Rectifying device
US3110080A (en) * 1958-01-20 1963-11-12 Westinghouse Electric Corp Rectifier fabrication
US2921245A (en) * 1958-10-08 1960-01-12 Int Rectifier Corp Hermetically sealed junction means
NL244815A (de) * 1959-02-09
NL131156C (de) * 1959-08-11
NL256633A (de) * 1959-10-09

Also Published As

Publication number Publication date
NL125803C (de)
US3116443A (en) 1963-12-31
ES273893A1 (es) 1962-06-01
FR1307591A (fr) 1962-10-26
GB992963A (en) 1965-05-26
NL270369A (de)
DE1300165B (de) 1969-07-31
BE612543A (fr) 1962-05-02

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