BE612543A - Dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur

Info

Publication number
BE612543A
BE612543A BE612543A BE612543A BE612543A BE 612543 A BE612543 A BE 612543A BE 612543 A BE612543 A BE 612543A BE 612543 A BE612543 A BE 612543A BE 612543 A BE612543 A BE 612543A
Authority
BE
Belgium
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
BE612543A
Other languages
English (en)
Inventor
John Heslop Forster
John Franklin Grandner
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of BE612543A publication Critical patent/BE612543A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
BE612543A 1961-01-16 1962-01-11 Dispositif semi-conducteur BE612543A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US82895A US3116443A (en) 1961-01-16 1961-01-16 Semiconductor device

Publications (1)

Publication Number Publication Date
BE612543A true BE612543A (fr) 1962-05-02

Family

ID=22174140

Family Applications (1)

Application Number Title Priority Date Filing Date
BE612543A BE612543A (fr) 1961-01-16 1962-01-11 Dispositif semi-conducteur

Country Status (8)

Country Link
US (1) US3116443A (fr)
BE (1) BE612543A (fr)
CH (1) CH389785A (fr)
DE (1) DE1300165B (fr)
ES (1) ES273893A1 (fr)
FR (1) FR1307591A (fr)
GB (1) GB992963A (fr)
NL (2) NL270369A (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE636316A (fr) * 1962-08-23 1900-01-01
US3331995A (en) * 1964-02-25 1967-07-18 Hughes Aircraft Co Housed semiconductor device with thermally matched elements
US3388301A (en) * 1964-12-09 1968-06-11 Signetics Corp Multichip integrated circuit assembly with interconnection structure
US3297921A (en) * 1965-04-15 1967-01-10 Int Rectifier Corp Controlled rectifier having shunted emitter formed by a nickel layer underneath an aluminum layer
US3521128A (en) * 1967-08-02 1970-07-21 Rca Corp Microminiature electrical component having integral indexing means
DE2855972C2 (de) * 1978-12-23 1984-09-27 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiteranordnung mit zwei integrierten und antiparallel geschalteten Dioden sowie Verfahren zu ihrer Herstellung
US4392577A (en) * 1981-04-10 1983-07-12 Shionogi & Co., Ltd. Glass vial with diagonal cut line
US5416354A (en) * 1989-01-06 1995-05-16 Unitrode Corporation Inverted epitaxial process semiconductor devices
EP0582694B1 (fr) * 1992-01-27 1998-05-20 Harris Corporation Dispositif a semi-conducteur avec un substrat semi-conducteur et une plaque en ceramique comme couvercle

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2874340A (en) * 1953-06-26 1959-02-17 Sprague Electric Co Rectifying contact
US2789258A (en) * 1955-06-29 1957-04-16 Raytheon Mfg Co Intrinsic coatings for semiconductor junctions
NL210518A (fr) * 1955-09-12
US2863105A (en) * 1955-11-10 1958-12-02 Hoffman Electronics Corp Rectifying device
US3110080A (en) * 1958-01-20 1963-11-12 Westinghouse Electric Corp Rectifier fabrication
US2921245A (en) * 1958-10-08 1960-01-12 Int Rectifier Corp Hermetically sealed junction means
BE584431A (fr) * 1959-02-09
NL254726A (fr) * 1959-08-11
NL256633A (fr) * 1959-10-09

Also Published As

Publication number Publication date
NL270369A (fr)
DE1300165B (de) 1969-07-31
NL125803C (fr)
US3116443A (en) 1963-12-31
GB992963A (en) 1965-05-26
FR1307591A (fr) 1962-10-26
CH389785A (de) 1965-03-31
ES273893A1 (es) 1962-06-01

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