| NL294370A
              (en:Method)
            
            * | 1963-06-20 |  |  |  | 
        
          | DE1224147B
              (de)
            
            * | 1963-08-23 | 1966-09-01 | Kalle Ag | Verfahren zur Umkehrentwicklung von Diazo-verbindungen enthaltenden Kopierschichten | 
        
          | GB1052699A
              (en:Method)
            
            * | 1963-12-03 |  |  |  | 
        
          | CA774047A
              (en)
            
            * | 1963-12-09 | 1967-12-19 | Shipley Company | Light-sensitive material and process for the development thereof | 
        
          | DE1471701A1
              (de)
            
            * | 1964-03-06 | 1969-02-20 | Basf Ag | Verfahren zum Herstellen von Druckformen | 
        
          | GB1053866A
              (en:Method)
            
            * | 1964-08-05 |  |  |  | 
        
          | GB1143611A
              (en:Method)
            
            * | 1965-03-22 |  |  |  | 
        
          | GB1113759A
              (en)
            
            * | 1965-12-17 | 1968-05-15 | Fuji Photo Film Co Ltd | Lithographic printing plates | 
        
          | NL136645C
              (en:Method)
            
            * | 1966-12-12 |  |  |  | 
        
          | US3647443A
              (en)
            
            * | 1969-09-12 | 1972-03-07 | Eastman Kodak Co | Light-sensitive quinone diazide polymers and polymer compositions | 
        
          | US3666473A
              (en)
            
            * | 1970-10-06 | 1972-05-30 | Ibm | Positive photoresists for projection exposure | 
        
          | US4052217A
              (en)
            
            * | 1971-11-09 | 1977-10-04 | Howson-Algraphy Limited | Bimetallic lithographic printing plates | 
        
          | US3865595A
              (en)
            
            * | 1972-11-09 | 1975-02-11 | Howson Algraphy Ltd | Lithographic printing plates | 
        
          | US4379827A
              (en)
            
            * | 1971-12-08 | 1983-04-12 | Energy Conversion Devices, Inc. | Imaging structure with tellurium metal film and energy sensitive material thereon | 
        
          | US3779778A
              (en)
            
            * | 1972-02-09 | 1973-12-18 | Minnesota Mining & Mfg | Photosolubilizable compositions and elements | 
        
          | JPS5024641B2
              (en:Method)
            
            * | 1972-10-17 | 1975-08-18 |  |  | 
        
          | US4012536A
              (en)
            
            * | 1972-12-14 | 1977-03-15 | Rca Corporation | Electron beam recording medium comprising 1-methylvinyl methyl ketone | 
        
          | US4018937A
              (en)
            
            * | 1972-12-14 | 1977-04-19 | Rca Corporation | Electron beam recording comprising polymer of 1-methylvinyl methyl ketone | 
        
          | US3772016A
              (en)
            
            * | 1973-01-30 | 1973-11-13 | Ibm | Method of producing multicolor planographic printing surface | 
        
          | US3950173A
              (en)
            
            * | 1973-02-12 | 1976-04-13 | Rca Corporation | Electron beam recording article with o-quinone diazide compound | 
        
          | US4036644A
              (en)
            
            * | 1973-03-16 | 1977-07-19 | International Business Machines Corporation | Photoresist process and photosensitive O-quinone diazide article with aliphatic carboxylic acid as adhesion promotor | 
        
          | JPS5645127B2
              (en:Method)
            
            * | 1974-02-25 | 1981-10-24 |  |  | 
        
          | US3982943A
              (en)
            
            * | 1974-03-05 | 1976-09-28 | Ibm Corporation | Lift-off method of fabricating thin films and a structure utilizable as a lift-off mask | 
        
          | US4168979A
              (en)
            
            * | 1974-03-19 | 1979-09-25 | Fuji Photo Film Co., Ltd. | Light-sensitive printing plate with matt overlayer | 
        
          | JPS50125805A
              (en:Method)
            
            * | 1974-03-19 | 1975-10-03 |  |  | 
        
          | US4259430A
              (en)
            
            * | 1974-05-01 | 1981-03-31 | International Business Machines Corporation | Photoresist O-quinone diazide containing composition and resist mask formation process | 
        
          | US4007047A
              (en)
            
            * | 1974-06-06 | 1977-02-08 | International Business Machines Corporation | Modified processing of positive photoresists | 
        
          | US3958994A
              (en)
            
            * | 1974-08-26 | 1976-05-25 | American Hoechst Corporation | Photosensitive diazo steel lithoplate structure | 
        
          | US3979212A
              (en)
            
            * | 1974-10-04 | 1976-09-07 | Printing Developments, Inc. | Laminated lithographic printing plate | 
        
          | US4191573A
              (en)
            
            * | 1974-10-09 | 1980-03-04 | Fuji Photo Film Co., Ltd. | Photosensitive positive image forming process with two photo-sensitive layers | 
        
          | US4189320A
              (en)
            
            * | 1975-04-29 | 1980-02-19 | American Hoechst Corporation | Light-sensitive o-quinone diazide compositions and photographic reproduction processes and structures | 
        
          | US4174222A
              (en)
            
            * | 1975-05-24 | 1979-11-13 | Tokyo Ohka Kogyo Kabushiki Kaisha | Positive-type O-quinone diazide containing photoresist compositions | 
        
          | US4125661A
              (en)
            
            * | 1976-03-19 | 1978-11-14 | Mona Industries, Inc. | Laminated plates for chemical milling | 
        
          | US4040891A
              (en)
            
            * | 1976-06-30 | 1977-08-09 | Ibm Corporation | Etching process utilizing the same positive photoresist layer for two etching steps | 
        
          | US4211834A
              (en)
            
            * | 1977-12-30 | 1980-07-08 | International Business Machines Corporation | Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask | 
        
          | FR2417795A1
              (fr)
            
            * | 1978-02-15 | 1979-09-14 | Rhone Poulenc Graphic | Nouveau support de plaques lithographiques et procede de mise en oeuvre | 
        
          | JPS5562444A
              (en)
            
            * | 1978-11-02 | 1980-05-10 | Konishiroku Photo Ind Co Ltd | Photosensitive composition | 
        
          | US4284706A
              (en)
            
            * | 1979-12-03 | 1981-08-18 | International Business Machines Corporation | Lithographic resist composition for a lift-off process | 
        
          | US4332881A
              (en)
            
            * | 1980-07-28 | 1982-06-01 | Bell Telephone Laboratories, Incorporated | Resist adhesion in integrated circuit processing | 
        
          | US4431724A
              (en)
            
            * | 1981-01-07 | 1984-02-14 | Ovchinnikov Jury M | Offset printing plate and process for making same | 
        
          | JPS5858546A
              (ja)
            
            * | 1981-10-02 | 1983-04-07 | Kimoto & Co Ltd | 製版用感光性マスク材料 | 
        
          | US4499171A
              (en)
            
            * | 1982-04-20 | 1985-02-12 | Japan Synthetic Rubber Co., Ltd. | Positive type photosensitive resin composition with at least two o-quinone diazides | 
        
          | DE3220816A1
              (de)
            
            * | 1982-06-03 | 1983-12-08 | Merck Patent Gmbh, 6100 Darmstadt | Lichtempfindliche komponenten fuer positiv arbeitende fotoresistmaterialien | 
        
          | DE3323343A1
              (de)
            
            * | 1983-06-29 | 1985-01-10 | Hoechst Ag, 6230 Frankfurt | Lichtempfindliches gemisch und daraus hergestelltes kopiermaterial | 
        
          | JPS6057339A
              (ja)
            
            * | 1983-09-08 | 1985-04-03 | Sumitomo Chem Co Ltd | ポジ型フォトレジスト組成物 | 
        
          | US4567132A
              (en)
            
            * | 1984-03-16 | 1986-01-28 | International Business Machines Corporation | Multi-level resist image reversal lithography process | 
        
          | US4588670A
              (en)
            
            * | 1985-02-28 | 1986-05-13 | American Hoechst Corporation | Light-sensitive trisester of O-quinone diazide containing composition for the preparation of a positive-acting photoresist | 
        
          | US4737437A
              (en)
            
            * | 1986-03-27 | 1988-04-12 | East Shore Chemical Co. | Light sensitive diazo compound, composition and method of making the composition | 
        
          | US5128230A
              (en)
            
            * | 1986-12-23 | 1992-07-07 | Shipley Company Inc. | Quinone diazide containing photoresist composition utilizing mixed solvent of ethyl lactate, anisole and amyl acetate | 
        
          | US5182183A
              (en)
            
            * | 1987-03-12 | 1993-01-26 | Mitsubishi Kasei Corporation | Positive photosensitive planographic printing plates containing specific high-molecular weight compound and photosensitive ester of O-napthoquinonediazidosulfonic acid with polyhydroxybenzophenone | 
        
          | US4810619A
              (en)
            
            * | 1987-08-12 | 1989-03-07 | General Electric Co. | Photolithography over reflective substrates comprising a titanium nitride layer | 
        
          | JPH07119374B2
              (ja)
            
            * | 1987-11-06 | 1995-12-20 | 関西ペイント株式会社 | ポジ型感光性カチオン電着塗料組成物 | 
        
          | US4996122A
              (en)
            
            * | 1988-03-31 | 1991-02-26 | Morton International, Inc. | Method of forming resist pattern and thermally stable and highly resolved resist pattern | 
        
          | EP0338102B1
              (de)
            
            * | 1988-04-19 | 1993-03-10 | International Business Machines Corporation | Verfahren zur Herstellung von integrierten Halbleiterstrukturen welche Feldeffekttransistoren mit Kanallängen im Submikrometerbereich enthalten | 
        
          | US4943511A
              (en)
            
            * | 1988-08-05 | 1990-07-24 | Morton Thiokol, Inc. | High sensitivity mid and deep UV resist | 
        
          | US4959293A
              (en)
            
            * | 1988-10-28 | 1990-09-25 | J. T. Baker, Inc. | Deep UV photoresist with alkyl 2-diazo-1-ones as solubility modification agents | 
        
          | EP0369053B1
              (de)
            
            * | 1988-11-17 | 1994-03-02 | International Business Machines Corporation | Verfahren zur Herstellung von Masken mit Strukturen im Submikrometerbereich | 
        
          | US5296330A
              (en)
            
            * | 1991-08-30 | 1994-03-22 | Ciba-Geigy Corp. | Positive photoresists containing quinone diazide photosensitizer, alkali-soluble resin and tetra(hydroxyphenyl) alkane additive | 
        
          | US7285422B1
              (en) | 1997-01-23 | 2007-10-23 | Sequenom, Inc. | Systems and methods for preparing and analyzing low volume analyte array elements | 
        
          | EP1332000B1
              (en) | 2000-10-30 | 2012-06-20 | Sequenom, Inc. | Method for delivery of submicroliter volumes onto a substrate | 
        
          | US20090180931A1
              (en) | 2007-09-17 | 2009-07-16 | Sequenom, Inc. | Integrated robotic sample transfer device |