CH380085A - Verfahren zum Ziehen von Halbleiterstäben aus der Schmelze sowie Tiegelvorrichtung zur Durchführung des Verfahrens - Google Patents
Verfahren zum Ziehen von Halbleiterstäben aus der Schmelze sowie Tiegelvorrichtung zur Durchführung des VerfahrensInfo
- Publication number
- CH380085A CH380085A CH8044859A CH8044859A CH380085A CH 380085 A CH380085 A CH 380085A CH 8044859 A CH8044859 A CH 8044859A CH 8044859 A CH8044859 A CH 8044859A CH 380085 A CH380085 A CH 380085A
- Authority
- CH
- Switzerland
- Prior art keywords
- melt
- carrying
- crucible device
- semiconductor rods
- pulling semiconductor
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES60633A DE1141977B (de) | 1958-11-17 | 1958-11-17 | Verfahren zum Ziehen von duennen, im wesentlichen einkristallinen Halbleiterstaeben aus einer Schmelze |
Publications (1)
Publication Number | Publication Date |
---|---|
CH380085A true CH380085A (de) | 1964-07-31 |
Family
ID=7494258
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH8044859A CH380085A (de) | 1958-11-17 | 1959-11-10 | Verfahren zum Ziehen von Halbleiterstäben aus der Schmelze sowie Tiegelvorrichtung zur Durchführung des Verfahrens |
Country Status (6)
Country | Link |
---|---|
US (1) | US3078151A (es) |
CH (1) | CH380085A (es) |
DE (1) | DE1141977B (es) |
FR (1) | FR1237642A (es) |
GB (1) | GB916390A (es) |
NL (2) | NL244873A (es) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3240568A (en) * | 1961-12-20 | 1966-03-15 | Monsanto Co | Process and apparatus for the production of single crystal compounds |
US3291650A (en) * | 1963-12-23 | 1966-12-13 | Gen Motors Corp | Control of crystal size |
US3291574A (en) * | 1963-12-23 | 1966-12-13 | Gen Motors Corp | Semiconductor crystal growth from a domical projection |
US3471266A (en) * | 1967-05-29 | 1969-10-07 | Tyco Laboratories Inc | Growth of inorganic filaments |
NL6917398A (es) * | 1969-03-18 | 1970-09-22 | ||
BE791024A (fr) * | 1971-11-08 | 1973-05-07 | Tyco Laboratories Inc | Procede pour developper des cristaux a partir d'un bain d'une matiere |
US4167554A (en) * | 1974-10-16 | 1979-09-11 | Metals Research Limited | Crystallization apparatus having floating die member with tapered aperture |
US4264385A (en) * | 1974-10-16 | 1981-04-28 | Colin Fisher | Growing of crystals |
DE2454092A1 (de) * | 1974-11-14 | 1976-05-26 | Wacker Chemitronic | Verfahren zum quantitativen entfernen von restschmelzen |
GB1487587A (en) * | 1974-12-04 | 1977-10-05 | Metals Res Ltd | Crystal growth |
GB1577413A (en) * | 1976-03-17 | 1980-10-22 | Metals Research Ltd | Growth of crystalline material |
JPS6379790A (ja) * | 1986-09-22 | 1988-04-09 | Toshiba Corp | 結晶引上げ装置 |
JPH0633218B2 (ja) * | 1987-12-08 | 1994-05-02 | 日本鋼管株式会社 | シリコン単結晶の製造装置 |
JPH01192789A (ja) * | 1988-01-27 | 1989-08-02 | Toshiba Corp | 結晶引上げ装置及び結晶引上げ方法 |
JP2755588B2 (ja) * | 1988-02-22 | 1998-05-20 | 株式会社東芝 | 結晶引上げ方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1061527B (de) * | 1953-02-14 | 1959-07-16 | Siemens Ag | Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken |
NL107897C (es) * | 1953-05-18 | |||
US2944875A (en) * | 1953-07-13 | 1960-07-12 | Raytheon Co | Crystal-growing apparatus and methods |
DE1134967B (de) * | 1954-03-02 | 1962-08-23 | Siemens Ag | Verfahren zum Ziehen eines stabfoermigen kristallinen Halbleiterkoerpers |
US2892739A (en) * | 1954-10-01 | 1959-06-30 | Honeywell Regulator Co | Crystal growing procedure |
US2927008A (en) * | 1956-10-29 | 1960-03-01 | Shockley Transistor Corp | Crystal growing apparatus |
-
0
- NL NL121446D patent/NL121446C/xx active
- NL NL244873D patent/NL244873A/xx unknown
-
1958
- 1958-11-17 DE DES60633A patent/DE1141977B/de active Pending
-
1959
- 1959-09-25 US US842364A patent/US3078151A/en not_active Expired - Lifetime
- 1959-10-16 FR FR807710A patent/FR1237642A/fr not_active Expired
- 1959-11-10 CH CH8044859A patent/CH380085A/de unknown
- 1959-11-17 GB GB38988/59A patent/GB916390A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR1237642A (fr) | 1960-07-29 |
DE1141977B (de) | 1963-01-03 |
GB916390A (en) | 1963-01-23 |
NL244873A (es) | |
NL121446C (es) | |
US3078151A (en) | 1963-02-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CH440226A (de) | Verfahren zum Ziehen von Kristallen aus der Schmelze | |
CH407051A (de) | Verfahren zum Aufziehen von Kristallen aus einer Schmelze und Vorrichtung zum Durchführen dieses Verfahrens | |
CH392077A (de) | Verfahren zum kontinuierlichen Ziehen dendritischer Kristalle | |
CH380085A (de) | Verfahren zum Ziehen von Halbleiterstäben aus der Schmelze sowie Tiegelvorrichtung zur Durchführung des Verfahrens | |
CH394136A (de) | Verfahren zur Herstellung von reinem Silizium und Vorrichtung zur Durchführung desselben | |
CH367568A (de) | Verfahren zum Befestigen von Kontaktdrähten an Halbleiterkörpern und Einrichtung zur Ausführung des Verfahrens | |
CH357565A (de) | Verfahren und Einrichtung zum Evakuieren von Kokillen | |
CH365545A (de) | Verfahren zum Herstellen von Kristallen aus hochreinem Halbleitermaterial aus einer in einem Tiegel befindlichen Schmelze | |
CH373903A (de) | Verfahren zum tiegellosen Zonenziehen von Halbleitermaterial | |
CH380960A (de) | Vorrichtung zur Halterung von stabförmigem Halbleitermaterial in Einrichtungen zum tiegelfreien Zonenschmelzen | |
CH459175A (de) | Verfahren zur Herstellung von Harnstoff und Vorrichtung zum Durchführen des Verfahrens | |
CH370340A (de) | Verfahren zur Verkehrsüberwachung und Einrichtung zur Durchführung des Verfahrens | |
CH386116A (de) | Verfahren zum tiegelfreien Zonenschmelzen von Halbleiterstäben aus Silizium | |
CH386702A (de) | Verfahren zum Ziehen von kristallinen Halbleiterstäben aus der Schmelze | |
CH421902A (de) | Verfahren zum tiegelfreien Zonenschmelzen und Vorrichtung zur Durchführung des Verfahrens | |
AT281720B (de) | Verfahren zur Herstellung von Waffeln und Vorrichtung zur Durchführung des Verfahrens | |
CH381055A (de) | Verfahren zum Fräsen von Profilen und Fräsvorrichtung zur Durchführung des Verfahrens | |
CH400470A (de) | Verfahren und Vorrichtung zur Herstellung von Wolle aus mineralischem Material | |
CH424731A (de) | Verfahren zum epitaktischen Abscheiden von Halbleitermaterial und Vorrichtung zur Durchführung des Verfahrens | |
CH358541A (de) | Verfahren zum Aufschmelzen von Polyamidschnitzeln und Vorrichtung zur Durchführung des Verfahrens | |
CH435765A (de) | Verfahren zur Herstellung von Erdalkalimetallen und Vorrichtung zur Durchführung des Verfahrens | |
CH471618A (de) | Verfahren zum Schleudergiessen sowie Vorrichtung zur Ausführung des Verfahrens | |
CH368817A (de) | Verfahren zum Verdampfen von Flüssigkeiten und Vorrichtung zur Durchführung des Verfahrens | |
CH433190A (de) | Verfahren und Vorrichtung zum Aufziehen von Kristallen aus einer Schmelze | |
CH430664A (de) | Verfahren zum tiegellosen Zonenschmelzen von Stäben aus Silicium |