CA999654A - Protective circuit for an insulated gate field effect transistor - Google Patents

Protective circuit for an insulated gate field effect transistor

Info

Publication number
CA999654A
CA999654A CA162,396A CA162396A CA999654A CA 999654 A CA999654 A CA 999654A CA 162396 A CA162396 A CA 162396A CA 999654 A CA999654 A CA 999654A
Authority
CA
Canada
Prior art keywords
field effect
effect transistor
insulated gate
protective circuit
gate field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA162,396A
Other languages
English (en)
Other versions
CA162396S (en
Inventor
Tatsuya Enomoto
Hiroshi Morita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of CA999654A publication Critical patent/CA999654A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
CA162,396A 1972-01-31 1973-01-30 Protective circuit for an insulated gate field effect transistor Expired CA999654A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47011194A JPS5132511B2 (hu) 1972-01-31 1972-01-31

Publications (1)

Publication Number Publication Date
CA999654A true CA999654A (en) 1976-11-09

Family

ID=11771233

Family Applications (1)

Application Number Title Priority Date Filing Date
CA162,396A Expired CA999654A (en) 1972-01-31 1973-01-30 Protective circuit for an insulated gate field effect transistor

Country Status (7)

Country Link
JP (1) JPS5132511B2 (hu)
CA (1) CA999654A (hu)
CH (1) CH552285A (hu)
FR (1) FR2170022B1 (hu)
GB (1) GB1419542A (hu)
IT (1) IT977703B (hu)
NL (1) NL158324B (hu)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111042A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Gate circuit
JPS5226881U (hu) * 1975-08-14 1977-02-24
JPS53121579A (en) * 1977-03-31 1978-10-24 Toshiba Corp Semiconductor integrated circuit
US4751473A (en) * 1985-11-05 1988-06-14 Mitsubishi Denki Kabushiki Kaisha FET amplifier circuit
US4737733A (en) * 1986-10-29 1988-04-12 Rca Corporation Overdrive control of FET power amplifier
JPH0693613B2 (ja) * 1987-01-16 1994-11-16 三菱電機株式会社 Ｍｉｓトランジスタ回路
JPS63208324A (ja) * 1987-02-24 1988-08-29 Mitsubishi Electric Corp 半導体集積回路装置
US8804290B2 (en) * 2012-01-17 2014-08-12 Texas Instruments Incorporated Electrostatic discharge protection circuit having buffer stage FET with thicker gate oxide than common-source FET

Also Published As

Publication number Publication date
NL158324B (nl) 1978-10-16
CH552285A (de) 1974-07-31
JPS5132511B2 (hu) 1976-09-13
IT977703B (it) 1974-09-20
DE2304710A1 (de) 1973-08-09
NL7301309A (hu) 1973-08-02
DE2304710B2 (de) 1975-07-03
FR2170022A1 (hu) 1973-09-14
GB1419542A (en) 1975-12-31
FR2170022B1 (hu) 1976-04-30
JPS4881485A (hu) 1973-10-31

Similar Documents

Publication Publication Date Title
CA959171A (en) Input transient protection for complementary insulated gate field effect transistor integrated circuit
AU476907B2 (en) Logic circuit arrangement employing insulated gate field effect transistors
AU459838B2 (en) Gate protective device for insulated gate field effect transistors
CA1013440A (en) Protective circuit for transistor amplifier
CA996640A (en) Flip-flop circuits utilizing insulated gate field effect transistors
CA1000809A (en) Fast insulated gate filed effect transistor circuit using multiple threshold technology
CA977039A (en) Transistor circuit
CA979080A (en) Logic circuit arrangement using insulated gate field effect transistors
CA999654A (en) Protective circuit for an insulated gate field effect transistor
AU452187B2 (en) Field effect transistor circuit
CA941515A (en) Gate protective device for insulated gate field-effect transistors
AU1352970A (en) High voltage insulated gate field effect device
CA934069A (en) Field effect transistor circuit
CA901168A (en) Semiconductor device comprising an insulated gate field effect transistor
CA902242A (en) Protective devices for field effect transistors
CA916301A (en) Complementary insulated gate field effect transistor integrated circuits
CA823845A (en) Insulated gate field effect transistor
AU423705B2 (en) Gate structure for insulated gate field effect transistor
AU486766B2 (en) Semiconductor device including an insulated gate field effect transistor
CA1015833A (en) Protective circuit for transistor amplifier
AU3926168A (en) Gate structure for insulated gate field effect transistor
AU7206174A (en) Semiconductor device including an insulated gate field effect transistor
CA848633A (en) Insulated gate field effect transistors
CA848645A (en) Insulated gate field effect transistors
CA838894A (en) Insulated gate field effect transistors