CA984523A - Process for the formation of self-aligned silicon and aluminum gates - Google Patents
Process for the formation of self-aligned silicon and aluminum gatesInfo
- Publication number
- CA984523A CA984523A CA171,132A CA171132A CA984523A CA 984523 A CA984523 A CA 984523A CA 171132 A CA171132 A CA 171132A CA 984523 A CA984523 A CA 984523A
- Authority
- CA
- Canada
- Prior art keywords
- self
- formation
- aligned silicon
- aluminum gates
- gates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title 1
- 229910052782 aluminium Inorganic materials 0.000 title 1
- 230000015572 biosynthetic process Effects 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
- Non-Volatile Memory (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US00267879A US3834959A (en) | 1972-06-30 | 1972-06-30 | Process for the formation of selfaligned silicon and aluminum gates |
Publications (1)
Publication Number | Publication Date |
---|---|
CA984523A true CA984523A (en) | 1976-02-24 |
Family
ID=23020517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA171,132A Expired CA984523A (en) | 1972-06-30 | 1973-05-08 | Process for the formation of self-aligned silicon and aluminum gates |
Country Status (7)
Country | Link |
---|---|
US (1) | US3834959A (pl) |
JP (1) | JPS543599B2 (pl) |
CA (1) | CA984523A (pl) |
DE (1) | DE2331393C2 (pl) |
FR (1) | FR2191274A1 (pl) |
GB (1) | GB1418231A (pl) |
IT (1) | IT987430B (pl) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51147226A (en) * | 1975-06-13 | 1976-12-17 | Nec Corp | Semiconductor memory device |
US4075045A (en) * | 1976-02-09 | 1978-02-21 | International Business Machines Corporation | Method for fabricating FET one-device memory cells with two layers of polycrystalline silicon and fabrication of integrated circuits containing arrays of the memory cells charge storage capacitors utilizing five basic pattern deliberating steps |
US4827448A (en) * | 1976-09-13 | 1989-05-02 | Texas Instruments Incorporated | Random access memory cell with implanted capacitor region |
US4182636A (en) * | 1978-06-30 | 1980-01-08 | International Business Machines Corporation | Method of fabricating self-aligned contact vias |
US4238275A (en) * | 1978-12-29 | 1980-12-09 | International Business Machines Corporation | Pyrocatechol-amine-water solution for the determination of defects |
JPS5660052A (en) * | 1980-10-20 | 1981-05-23 | Toshiba Corp | Semiconductor memory device |
JPH0630355B2 (ja) * | 1983-05-16 | 1994-04-20 | ソニー株式会社 | 半導体装置 |
JPH0618263B2 (ja) * | 1984-02-23 | 1994-03-09 | 日本電気株式会社 | 電荷転送素子 |
JP2642523B2 (ja) * | 1991-03-19 | 1997-08-20 | 株式会社東芝 | 電荷結合素子を持つ半導体集積回路装置の製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2050320A1 (de) * | 1970-10-13 | 1972-04-20 | Siemens Ag | Halbleiteranordnung |
-
1972
- 1972-06-30 US US00267879A patent/US3834959A/en not_active Expired - Lifetime
-
1973
- 1973-05-08 CA CA171,132A patent/CA984523A/en not_active Expired
- 1973-05-15 IT IT24078/73A patent/IT987430B/it active
- 1973-06-04 JP JP6208273A patent/JPS543599B2/ja not_active Expired
- 1973-06-06 FR FR7321788A patent/FR2191274A1/fr not_active Withdrawn
- 1973-06-08 GB GB2730873A patent/GB1418231A/en not_active Expired
- 1973-06-20 DE DE2331393A patent/DE2331393C2/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2191274A1 (pl) | 1974-02-01 |
US3834959A (en) | 1974-09-10 |
IT987430B (it) | 1975-02-20 |
JPS4964382A (pl) | 1974-06-21 |
GB1418231A (en) | 1975-12-17 |
DE2331393C2 (de) | 1984-08-09 |
JPS543599B2 (pl) | 1979-02-24 |
DE2331393A1 (de) | 1974-01-17 |
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