CA974659A - Charged coupled devices using a thin insulated semiconductor layer - Google Patents

Charged coupled devices using a thin insulated semiconductor layer

Info

Publication number
CA974659A
CA974659A CA154,430A CA154430A CA974659A CA 974659 A CA974659 A CA 974659A CA 154430 A CA154430 A CA 154430A CA 974659 A CA974659 A CA 974659A
Authority
CA
Canada
Prior art keywords
semiconductor layer
coupled devices
charged coupled
insulated semiconductor
thin insulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA154,430A
Other languages
English (en)
Other versions
CA154430S (en
Inventor
Gijsbert Lock
Leonard J.M. Esser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA974659A publication Critical patent/CA974659A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Recrystallisation Techniques (AREA)
CA154,430A 1971-10-27 1972-10-23 Charged coupled devices using a thin insulated semiconductor layer Expired CA974659A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7114770,A NL176406C (nl) 1971-10-27 1971-10-27 Ladingsgekoppelde halfgeleiderinrichting met een halfgeleiderlichaam bevattende een aan een oppervlak grenzende halfgeleiderlaag en middelen om informatie in de vorm van pakketten meerderheidsladingsdragers in te voeren in de halfgeleiderlaag.

Publications (1)

Publication Number Publication Date
CA974659A true CA974659A (en) 1975-09-16

Family

ID=19814339

Family Applications (1)

Application Number Title Priority Date Filing Date
CA154,430A Expired CA974659A (en) 1971-10-27 1972-10-23 Charged coupled devices using a thin insulated semiconductor layer

Country Status (10)

Country Link
US (1) US4807005A (fr)
JP (2) JPS579228B2 (fr)
AU (1) AU473052B2 (fr)
CA (1) CA974659A (fr)
DE (1) DE2252148C3 (fr)
ES (1) ES407968A1 (fr)
FR (1) FR2157972B1 (fr)
GB (1) GB1414183A (fr)
IT (1) IT975353B (fr)
NL (1) NL176406C (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4688067A (en) * 1984-02-24 1987-08-18 The United States Of America As Represented By The Department Of Energy Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5850032B2 (ja) * 1972-07-26 1983-11-08 株式会社日立製作所 ハンドウタイソウチ
NL165886C (nl) 1972-04-03 1981-05-15 Hitachi Ltd Halfgeleiderinrichting van het ladingsgekoppelde type voor het opslaan en in volgorgde overdragen van pakketten meerderheidsladingdragers.
NL7311600A (nl) * 1973-08-23 1975-02-25 Philips Nv Ladingsgekoppelde inrichting.
NL7316495A (nl) * 1973-12-03 1975-06-05 Philips Nv Halfgeleiderinrichting.
DE2400208A1 (de) * 1974-01-03 1975-07-17 Siemens Ag Ladungsgekoppelte uebertragungsanordnung bei der zur ladungsuebertragung majoritaetstraeger verwendet werden
JPS5821360B2 (ja) * 1974-11-01 1983-04-28 日本電気株式会社 デンカテンソウソウチ
GB1548877A (en) * 1975-06-26 1979-07-18 Mullard Ltd Semiconductor devices
GB1518953A (en) * 1975-09-05 1978-07-26 Mullard Ltd Charge coupled dircuit arrangements and devices
GB1564107A (en) * 1976-11-05 1980-04-02 Mullard Ltd Charge coupled devices
NL7610351A (nl) * 1976-09-17 1978-03-21 Philips Nv Ladingsoverdrachtinrichting.
JPS56115574A (en) * 1980-01-16 1981-09-10 Nec Corp Semiconductor image pickup element
DE3028727A1 (de) * 1980-07-29 1982-02-25 Siemens AG, 1000 Berlin und 8000 München Ruecksetzschaltung mit unterdruecktem ruecksetzrauschen, insbesondere fuer eine floating-diffusion-ausgangsstufe einer ladungsverschiebeanordnung (ccd)
JPS5861661A (ja) * 1981-10-08 1983-04-12 Toshiba Corp 電荷転送装置
JPS5898961A (ja) * 1981-12-09 1983-06-13 Toshiba Corp 電荷転送装置
US4935346A (en) * 1986-08-13 1990-06-19 Lifescan, Inc. Minimum procedure system for the determination of analytes

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL152707B (nl) * 1967-06-08 1977-03-15 Philips Nv Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan.
US3660697A (en) * 1970-02-16 1972-05-02 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
US3796927A (en) * 1970-12-16 1974-03-12 Bell Telephone Labor Inc Three dimensional charge coupled devices
US3902187A (en) * 1971-04-01 1975-08-26 Gen Electric Surface charge storage and transfer devices
US3739240A (en) * 1971-04-06 1973-06-12 Bell Telephone Labor Inc Buried channel charge coupled devices
US3796932A (en) * 1971-06-28 1974-03-12 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel
US3792322A (en) * 1973-04-19 1974-02-12 W Boyle Buried channel charge coupled devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4688067A (en) * 1984-02-24 1987-08-18 The United States Of America As Represented By The Department Of Energy Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

Also Published As

Publication number Publication date
FR2157972B1 (fr) 1977-08-26
DE2252148A1 (de) 1973-05-03
GB1414183A (en) 1975-11-19
JPS53111284A (en) 1978-09-28
DE2252148B2 (fr) 1980-08-21
NL176406B (nl) 1984-11-01
FR2157972A1 (fr) 1973-06-08
ES407968A1 (es) 1976-02-01
IT975353B (it) 1974-07-20
JPS4853682A (fr) 1973-07-27
JPS579228B2 (fr) 1982-02-20
NL7114770A (fr) 1973-05-02
AU4812072A (en) 1974-04-26
DE2252148C3 (de) 1981-07-30
NL176406C (nl) 1985-04-01
US4807005A (en) 1989-02-21
JPS588150B2 (ja) 1983-02-14
AU473052B2 (en) 1976-06-10

Similar Documents

Publication Publication Date Title
CA964381A (en) Face-down-bonding using insulating adhesive
CA970877A (en) Buried channel charge coupled devices
CA974659A (en) Charged coupled devices using a thin insulated semiconductor layer
CA974152A (en) Thin layer semi conductor device
CA984945A (en) Electroluminescent semiconductor devices
AU463708B2 (en) Semiconductor device
AU474165B2 (en) Semiconductor device
CA970257A (en) Insulating layer on a semiconductor substrate
AU465323B2 (en) Semi-conductor devices
CA865339A (en) Semiconductor devices
CA864750A (en) Isolated semiconductor devices
CA872411A (en) Surge-resistant electrical devices
CA860017A (en) Lens-mirror device
CA977073A (en) Buried channel charge coupled devices
CA871394A (en) Modifying barrier layer devices
CA885140A (en) Semi-conductor devices
CA876396A (en) Semi-conductor devices
CA860541A (en) High-voltage planar semiconductor devices
CA869746A (en) Luminescent devices
CA881784A (en) Semiconductor junction devices
CA877578A (en) Electroluminescent devices
CA885685A (en) Electroluminescent devices
AU437746B2 (en) A device for inteconnecting insulated conductors
CA860548A (en) Solderless semiconductor devices
CA874694A (en) Flat package electrical device