CA964335A - Radiation-energized transistor circuit - Google Patents

Radiation-energized transistor circuit

Info

Publication number
CA964335A
CA964335A CA137,104A CA137104A CA964335A CA 964335 A CA964335 A CA 964335A CA 137104 A CA137104 A CA 137104A CA 964335 A CA964335 A CA 964335A
Authority
CA
Canada
Prior art keywords
radiation
transistor circuit
energized transistor
energized
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA137,104A
Other languages
English (en)
Other versions
CA137104S (en
Inventor
Cornelis M. Hart
Arie Slob
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL7103772A external-priority patent/NL7103772A/xx
Priority claimed from NL7108373A external-priority patent/NL7108373A/xx
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA964335A publication Critical patent/CA964335A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/02—Manually-operated control
    • H03G3/04—Manually-operated control in untuned amplifiers
    • H03G3/10—Manually-operated control in untuned amplifiers having semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/14—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/80—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water
    • H04B10/806—Arrangements for feeding power
    • H04B10/807—Optical power feeding, i.e. transmitting power using an optical signal
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R25/00—Deaf-aid sets, i.e. electro-acoustic or electro-mechanical hearing aids; Electric tinnitus maskers providing an auditory perception

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Signal Processing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Circuit Arrangements For Discharge Lamps (AREA)
CA137,104A 1971-03-20 1972-03-14 Radiation-energized transistor circuit Expired CA964335A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7103772A NL7103772A (de) 1971-03-20 1971-03-20
NL7108373A NL7108373A (de) 1971-06-18 1971-06-18

Publications (1)

Publication Number Publication Date
CA964335A true CA964335A (en) 1975-03-11

Family

ID=26644637

Family Applications (3)

Application Number Title Priority Date Filing Date
CA137,104A Expired CA964335A (en) 1971-03-20 1972-03-14 Radiation-energized transistor circuit
CA212,451A Expired CA970068A (en) 1971-03-20 1974-10-28 Radiation-energized transistor circuit
CA212,420A Expired CA973955A (en) 1971-03-20 1974-10-28 Radiation-energized transistor circuit

Family Applications After (2)

Application Number Title Priority Date Filing Date
CA212,451A Expired CA970068A (en) 1971-03-20 1974-10-28 Radiation-energized transistor circuit
CA212,420A Expired CA973955A (en) 1971-03-20 1974-10-28 Radiation-energized transistor circuit

Country Status (13)

Country Link
JP (3) JPS5550390B1 (de)
AR (1) AR196071A1 (de)
AT (1) AT326193B (de)
AU (1) AU467899B2 (de)
BE (1) BE780961A (de)
BR (1) BR7201587D0 (de)
CA (3) CA964335A (de)
CH (1) CH550487A (de)
DE (1) DE2211384A1 (de)
FR (1) FR2130399B1 (de)
GB (1) GB1395032A (de)
IT (1) IT953971B (de)
SE (1) SE377735B (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4027324A (en) * 1972-12-29 1977-05-31 Sony Corporation Bidirectional transistor
AT377645B (de) * 1972-12-29 1985-04-10 Sony Corp Halbleiterbauteil
US4007474A (en) * 1972-12-29 1977-02-08 Sony Corporation Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion
JPS5147583B2 (de) * 1972-12-29 1976-12-15
JPS5754969B2 (de) * 1974-04-04 1982-11-20
JPS57658B2 (de) * 1974-04-16 1982-01-07
JPS50137478A (de) * 1974-04-18 1975-10-31
JPS5714064B2 (de) * 1974-04-25 1982-03-20
JPS5648983B2 (de) * 1974-05-10 1981-11-19
JPS5718710B2 (de) * 1974-05-10 1982-04-17
JPS52105786A (en) * 1976-03-01 1977-09-05 Mitsubishi Electric Corp Semiconductor device
DE2641915A1 (de) * 1976-09-17 1978-03-23 Siemens Ag Monolithisch integrierte schaltung zur erzeugung von impulsen langer dauer
DE2641912C3 (de) * 1976-09-17 1980-05-29 Siemens Ag, 1000 Berlin Und 8000 Muenchen Schaltungsanordnung zur Übertragung elektrischer Versorgungsleistungen
JPS5368990A (en) * 1976-12-01 1978-06-19 Fujitsu Ltd Production of semiconductor integrated circuit
JPS56150871A (en) * 1980-04-24 1981-11-21 Toshiba Corp Semiconductor device
GB2151843A (en) * 1983-12-20 1985-07-24 Philips Electronic Associated Semiconductor devices
JPS61154063A (ja) * 1984-12-26 1986-07-12 Toshiba Corp 光半導体装置およびその製造方法
FR2619959B1 (fr) * 1987-08-31 1991-06-14 Thomson Semiconducteurs Circuit de detection de lumiere
JP2800827B2 (ja) * 1988-02-12 1998-09-21 浜松ホトニクス株式会社 光半導体装置およびその製造方法
GB2220316B (en) * 1988-05-05 1992-01-29 Plessey Co Plc Improvements in and relating to oscillators
DE102010039258B4 (de) 2010-08-12 2018-03-15 Infineon Technologies Austria Ag Transistorbauelement mit reduziertem Kurzschlussstrom

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2944165A (en) * 1956-11-15 1960-07-05 Otmar M Stuetzer Semionductive device powered by light
NL281945A (de) * 1960-10-14 1900-01-01
GB1050478A (de) * 1962-10-08
FR1377412A (fr) * 1962-10-08 1964-11-06 Fairchild Camera Instr Co Transistor épitaxique inverse

Also Published As

Publication number Publication date
AU467899B2 (en) 1975-12-18
CH550487A (de) 1974-06-14
FR2130399A1 (de) 1972-11-03
AU3997072A (en) 1973-09-20
DE2211384C2 (de) 1989-06-15
SE377735B (de) 1975-07-21
GB1395032A (en) 1975-05-21
JPS4736785A (de) 1972-11-29
CA970068A (en) 1975-06-24
IT953971B (it) 1973-08-10
FR2130399B1 (de) 1977-09-02
JPS5622144B2 (de) 1981-05-23
DE2211384A1 (de) 1972-11-30
AT326193B (de) 1975-11-25
JPS5550390B1 (de) 1980-12-17
JPS55160466A (en) 1980-12-13
CA973955A (en) 1975-09-02
ATA236072A (de) 1975-02-15
BE780961A (fr) 1972-09-20
AR196071A1 (es) 1973-11-30
JPS5622145B2 (de) 1981-05-23
BR7201587D0 (pt) 1974-10-22
JPS55160465A (en) 1980-12-13

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