CA961170A - Single-electrode charge-coupled random access memory cell - Google Patents

Single-electrode charge-coupled random access memory cell

Info

Publication number
CA961170A
CA961170A CA145,629A CA145629A CA961170A CA 961170 A CA961170 A CA 961170A CA 145629 A CA145629 A CA 145629A CA 961170 A CA961170 A CA 961170A
Authority
CA
Canada
Prior art keywords
memory cell
random access
access memory
electrode charge
coupled random
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA145,629A
Other languages
English (en)
Other versions
CA145629S (en
Inventor
Irving T. Ho
Hwa N. Yu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA961170A publication Critical patent/CA961170A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CA145,629A 1971-07-06 1972-06-26 Single-electrode charge-coupled random access memory cell Expired CA961170A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15986071A 1971-07-06 1971-07-06

Publications (1)

Publication Number Publication Date
CA961170A true CA961170A (en) 1975-01-14

Family

ID=22574399

Family Applications (1)

Application Number Title Priority Date Filing Date
CA145,629A Expired CA961170A (en) 1971-07-06 1972-06-26 Single-electrode charge-coupled random access memory cell

Country Status (7)

Country Link
JP (1) JPS5145945B1 (de)
CA (1) CA961170A (de)
CH (1) CH550458A (de)
DE (1) DE2232765C3 (de)
ES (1) ES404184A1 (de)
FR (1) FR2144903B1 (de)
IT (1) IT956843B (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2326761A1 (fr) * 1975-09-30 1977-04-29 Siemens Ag Memoire d'informations pour la memorisation d'informations sous forme de porteurs de charge electriques et procede pour sa mise en oeuvre
DE2543628A1 (de) * 1975-09-30 1977-04-21 Siemens Ag Informationsspeicher zum speichern von information in form von elektrischen ladungstraegern und verfahren zu seinem betrieb
DE2708101A1 (de) * 1977-02-25 1978-08-31 Itt Ind Gmbh Deutsche Verfahren zum schreiben eines speichertransistors mit gate-isolierdoppelschicht

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2137069B1 (de) * 1971-05-12 1976-03-19 Commissariat Energie Atomique
GB1374009A (en) * 1971-08-09 1974-11-13 Ibm Information storage

Also Published As

Publication number Publication date
JPS5145945B1 (de) 1976-12-06
FR2144903A1 (de) 1973-02-16
FR2144903B1 (de) 1977-01-14
CH550458A (de) 1974-06-14
DE2232765B2 (de) 1981-10-15
DE2232765C3 (de) 1982-05-27
IT956843B (it) 1973-10-10
DE2232765A1 (de) 1973-01-18
ES404184A1 (es) 1975-06-01

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