CA923635A - Reactor and method of manufacturing a semiconductor device with the aid of said reactor - Google Patents

Reactor and method of manufacturing a semiconductor device with the aid of said reactor

Info

Publication number
CA923635A
CA923635A CA107073A CA107073A CA923635A CA 923635 A CA923635 A CA 923635A CA 107073 A CA107073 A CA 107073A CA 107073 A CA107073 A CA 107073A CA 923635 A CA923635 A CA 923635A
Authority
CA
Canada
Prior art keywords
reactor
aid
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA107073A
Other languages
English (en)
Other versions
CA107073S (en
Inventor
C. Eversteijn Franciscus
L. Peek Hermanus
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA923635A publication Critical patent/CA923635A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45585—Compression of gas before it reaches the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
CA107073A 1970-03-11 1971-03-08 Reactor and method of manufacturing a semiconductor device with the aid of said reactor Expired CA923635A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7003431A NL7003431A (de) 1970-03-11 1970-03-11

Publications (1)

Publication Number Publication Date
CA923635A true CA923635A (en) 1973-03-27

Family

ID=19809548

Family Applications (1)

Application Number Title Priority Date Filing Date
CA107073A Expired CA923635A (en) 1970-03-11 1971-03-08 Reactor and method of manufacturing a semiconductor device with the aid of said reactor

Country Status (11)

Country Link
US (1) US3750620A (de)
JP (1) JPS5317862B1 (de)
AT (1) AT321994B (de)
BE (1) BE764013A (de)
CA (1) CA923635A (de)
CH (1) CH532960A (de)
DE (1) DE2110289C3 (de)
FR (1) FR2084428A5 (de)
GB (1) GB1346938A (de)
NL (1) NL7003431A (de)
SE (1) SE368724B (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5242075A (en) * 1975-09-29 1977-04-01 Nippon Denso Co Ltd Device for controlling gas atmosphere in semiconductor producing equip ment
GB1524326A (en) * 1976-04-13 1978-09-13 Bfg Glassgroup Coating of glass
JPS5942970B2 (ja) * 1979-03-29 1984-10-18 テルサ−ムコ株式会社 半導体熱処理用反応管
JPS5944771B2 (ja) * 1979-03-29 1984-11-01 テルサ−ムコ株式会社 半導体熱処理炉
JPS5923464B2 (ja) * 1979-04-18 1984-06-02 テルサ−ムコ株式会社 半導体熱処理装置
US4325319A (en) * 1980-01-18 1982-04-20 Caterpillar Tractor Co. Air flow system for the charging conductor in an electrostatic painting system
US4834022A (en) * 1985-11-08 1989-05-30 Focus Semiconductor Systems, Inc. CVD reactor and gas injection system
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
FR2612946B1 (fr) * 1987-03-27 1993-02-19 Chimie Metal Procede et installation pour le depot chimique de revetements ultradurs a temperature moderee
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
DE3721636A1 (de) * 1987-06-30 1989-01-12 Aixtron Gmbh Quarzglasreaktor fuer mocvd-anlagen
EP0378543B1 (de) * 1988-06-22 1993-10-06 Advanced Semiconductor Materials America, Inc. Gaseinspritzvorrichtung für reaktoren für den chemischen dampfniederschlag
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
US6090211A (en) * 1996-03-27 2000-07-18 Matsushita Electric Industrial Co., Ltd. Apparatus and method for forming semiconductor thin layer
US6214116B1 (en) * 1998-01-17 2001-04-10 Hanvac Corporation Horizontal reactor for compound semiconductor growth
SE9801190D0 (sv) * 1998-04-06 1998-04-06 Abb Research Ltd A method and a device for epitaxial growth of objects by Chemical Vapour Deposition
TW544775B (en) * 2001-02-28 2003-08-01 Japan Pionics Chemical vapor deposition apparatus and chemical vapor deposition method
US6626997B2 (en) 2001-05-17 2003-09-30 Nathan P. Shapiro Continuous processing chamber
AU2003242099A1 (en) * 2002-06-10 2003-12-22 Tokyo Electron Limited Processing device and processing method
US8124170B1 (en) * 2004-01-23 2012-02-28 Metal Oxide Technologies, Inc Method for forming superconductor material on a tape substrate
WO2005124859A2 (en) * 2004-06-10 2005-12-29 Avansys, Inc. Methods and apparatuses for depositing uniform layers
US7396415B2 (en) * 2005-06-02 2008-07-08 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
JP4466723B2 (ja) * 2007-11-21 2010-05-26 住友電気工業株式会社 有機金属気相成長装置
US8628616B2 (en) * 2007-12-11 2014-01-14 Sumitomo Electric Industries, Ltd. Vapor-phase process apparatus, vapor-phase process method, and substrate
JP5954202B2 (ja) * 2013-01-29 2016-07-20 東京エレクトロン株式会社 成膜装置
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484311A (en) * 1966-06-21 1969-12-16 Union Carbide Corp Silicon deposition process
US3367304A (en) * 1967-03-13 1968-02-06 Dow Corning Deposition chamber for manufacture of refractory coated filaments
US3511727A (en) * 1967-05-08 1970-05-12 Motorola Inc Vapor phase etching and polishing of semiconductors

Also Published As

Publication number Publication date
DE2110289A1 (de) 1971-09-23
DE2110289B2 (de) 1980-03-13
SE368724B (de) 1974-07-15
CH532960A (de) 1973-01-31
GB1346938A (en) 1974-02-13
FR2084428A5 (de) 1971-12-17
AT321994B (de) 1975-04-25
JPS5317862B1 (de) 1978-06-12
DE2110289C3 (de) 1980-10-30
NL7003431A (de) 1971-09-14
US3750620A (en) 1973-08-07
BE764013A (fr) 1971-09-09

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