CA3016028C - Leakage-aware activation control of a delayed keeper circuit for a dynamic read operation in a memory bit cell - Google Patents
Leakage-aware activation control of a delayed keeper circuit for a dynamic read operation in a memory bit cell Download PDFInfo
- Publication number
- CA3016028C CA3016028C CA3016028A CA3016028A CA3016028C CA 3016028 C CA3016028 C CA 3016028C CA 3016028 A CA3016028 A CA 3016028A CA 3016028 A CA3016028 A CA 3016028A CA 3016028 C CA3016028 C CA 3016028C
- Authority
- CA
- Canada
- Prior art keywords
- leakage
- nfet
- pfet
- circuit
- indicator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000004913 activation Effects 0.000 title claims abstract description 139
- 230000003111 delayed effect Effects 0.000 title claims abstract description 115
- 230000005669 field effect Effects 0.000 claims abstract description 12
- 230000004044 response Effects 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 23
- 230000000295 complement effect Effects 0.000 claims description 19
- 238000011156 evaluation Methods 0.000 claims description 14
- 230000009849 deactivation Effects 0.000 claims description 5
- 230000006870 function Effects 0.000 claims description 4
- 230000001413 cellular effect Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 15
- 230000008569 process Effects 0.000 description 13
- 238000013461 design Methods 0.000 description 10
- 230000010355 oscillation Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000006399 behavior Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 3
- 230000003116 impacting effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000013500 data storage Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/085,187 | 2016-03-30 | ||
| US15/085,187 US9940992B2 (en) | 2016-03-30 | 2016-03-30 | Leakage-aware activation control of a delayed keeper circuit for a dynamic read operation in a memory bit cell |
| PCT/US2017/020351 WO2017172230A1 (en) | 2016-03-30 | 2017-03-02 | Leakage-aware activation control of a delayed keeper circuit for a dynamic read operation in a memory bit cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA3016028A1 CA3016028A1 (en) | 2017-10-05 |
| CA3016028C true CA3016028C (en) | 2023-10-03 |
Family
ID=58410447
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA3016028A Active CA3016028C (en) | 2016-03-30 | 2017-03-02 | Leakage-aware activation control of a delayed keeper circuit for a dynamic read operation in a memory bit cell |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9940992B2 (enExample) |
| EP (1) | EP3437101B1 (enExample) |
| JP (1) | JP6949047B2 (enExample) |
| KR (1) | KR102393770B1 (enExample) |
| CN (1) | CN108780658B (enExample) |
| CA (1) | CA3016028C (enExample) |
| ES (1) | ES2897915T3 (enExample) |
| WO (1) | WO2017172230A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10181358B2 (en) * | 2016-10-26 | 2019-01-15 | Mediatek Inc. | Sense amplifier |
| US10672439B2 (en) | 2018-07-10 | 2020-06-02 | Globalfoundries Inc. | Data dependent keeper on global data lines |
| US12148464B2 (en) * | 2021-07-26 | 2024-11-19 | Xilinx, Inc. | Current leakage management controller for reading from memory cells |
| KR20230036255A (ko) * | 2021-09-07 | 2023-03-14 | 에스케이하이닉스 주식회사 | 누설 전류를 보상할 수 있는 반도체 집적 회로 및 그 구동 방법 |
| JP2024072439A (ja) * | 2022-11-16 | 2024-05-28 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6894528B2 (en) * | 2002-09-17 | 2005-05-17 | Sun Microsystems, Inc. | Process monitor based keeper scheme for dynamic circuits |
| US6844750B2 (en) | 2003-03-31 | 2005-01-18 | Intel Corporation | Current mirror based multi-channel leakage current monitor circuit and method |
| US7202704B2 (en) * | 2004-09-09 | 2007-04-10 | International Business Machines Corporation | Leakage sensing and keeper circuit for proper operation of a dynamic circuit |
| US7256621B2 (en) * | 2005-03-25 | 2007-08-14 | Fujitsu Limited | Keeper circuits having dynamic leakage compensation |
| JP4912016B2 (ja) * | 2005-05-23 | 2012-04-04 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
| US7551021B2 (en) * | 2005-06-22 | 2009-06-23 | Qualcomm Incorporated | Low-leakage current sources and active circuits |
| US7332937B2 (en) | 2005-12-28 | 2008-02-19 | Intel Corporation | Dynamic logic with adaptive keeper |
| US20070211517A1 (en) * | 2006-03-10 | 2007-09-13 | Freescale Semiconductor, Inc. | System and method for operating a memory circuit |
| US7495971B2 (en) * | 2006-04-19 | 2009-02-24 | Infineon Technologies Ag | Circuit and a method of determining the resistive state of a resistive memory cell |
| US7417469B2 (en) | 2006-11-13 | 2008-08-26 | International Business Machines Corporation | Compensation for leakage current from dynamic storage node variation by the utilization of an automatic self-adaptive keeper |
| US7474132B2 (en) | 2006-12-04 | 2009-01-06 | International Business Machines Corporation | Automatic self-adaptive keeper system with current sensor for real-time/online compensation for leakage current variations |
| US7902878B2 (en) * | 2008-04-29 | 2011-03-08 | Qualcomm Incorporated | Clock gating system and method |
| US8214777B2 (en) * | 2009-04-07 | 2012-07-03 | International Business Machines Corporation | On-chip leakage current modeling and measurement circuit |
| US7986165B1 (en) * | 2010-02-08 | 2011-07-26 | Qualcomm Incorporated | Voltage level shifter with dynamic circuit structure having discharge delay tracking |
| US8644087B2 (en) | 2011-07-07 | 2014-02-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Leakage-aware keeper for semiconductor memory |
| US20130106524A1 (en) * | 2011-11-01 | 2013-05-02 | Nvidia Corporation | System and method for examining leakage impacts |
| CN102436850B (zh) * | 2011-11-30 | 2014-07-23 | 中国科学院微电子研究所 | 检测读取操作对临近单元干扰的方法 |
| US8482316B1 (en) | 2012-03-02 | 2013-07-09 | Oracle International Corporation | Adaptive timing control circuitry to address leakage |
| US9299395B2 (en) * | 2012-03-26 | 2016-03-29 | Intel Corporation | Methods and systems to selectively boost an operating voltage of, and controls to an 8T bit-cell array and/or other logic blocks |
| US8988954B2 (en) | 2012-09-13 | 2015-03-24 | Arm Limited | Memory device and method of performing a read operation within such a memory device |
| US9208900B2 (en) * | 2013-01-23 | 2015-12-08 | Nvidia Corporation | System and method for performing address-based SRAM access assists |
| US9460776B2 (en) * | 2013-01-23 | 2016-10-04 | Nvidia Corporation | SRAM voltage assist |
| US20140293679A1 (en) * | 2013-03-26 | 2014-10-02 | International Business Machines Corporation | Management of sram initialization |
| WO2015099748A1 (en) | 2013-12-26 | 2015-07-02 | Intel Corporation | Apparatus and method for reducing operating supply voltage using adaptive register file keeper |
-
2016
- 2016-03-30 US US15/085,187 patent/US9940992B2/en not_active Expired - Fee Related
-
2017
- 2017-03-02 KR KR1020187028226A patent/KR102393770B1/ko active Active
- 2017-03-02 ES ES17713511T patent/ES2897915T3/es active Active
- 2017-03-02 JP JP2018550525A patent/JP6949047B2/ja not_active Expired - Fee Related
- 2017-03-02 EP EP17713511.8A patent/EP3437101B1/en active Active
- 2017-03-02 CN CN201780016843.2A patent/CN108780658B/zh active Active
- 2017-03-02 WO PCT/US2017/020351 patent/WO2017172230A1/en not_active Ceased
- 2017-03-02 CA CA3016028A patent/CA3016028C/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019510332A (ja) | 2019-04-11 |
| US9940992B2 (en) | 2018-04-10 |
| CA3016028A1 (en) | 2017-10-05 |
| JP6949047B2 (ja) | 2021-10-13 |
| BR112018069888A2 (pt) | 2019-02-05 |
| CN108780658A (zh) | 2018-11-09 |
| KR102393770B1 (ko) | 2022-05-02 |
| EP3437101B1 (en) | 2021-10-13 |
| EP3437101A1 (en) | 2019-02-06 |
| WO2017172230A1 (en) | 2017-10-05 |
| US20170287550A1 (en) | 2017-10-05 |
| ES2897915T3 (es) | 2022-03-03 |
| CN108780658B (zh) | 2022-05-03 |
| KR20180125490A (ko) | 2018-11-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request |
Effective date: 20220127 |
|
| EEER | Examination request |
Effective date: 20220127 |
|
| EEER | Examination request |
Effective date: 20220127 |
|
| EEER | Examination request |
Effective date: 20220127 |
|
| EEER | Examination request |
Effective date: 20220127 |
|
| EEER | Examination request |
Effective date: 20220127 |