CA2992464A1 - Applications, methods and systems for a laser deliver addressable array - Google Patents

Applications, methods and systems for a laser deliver addressable array Download PDF

Info

Publication number
CA2992464A1
CA2992464A1 CA2992464A CA2992464A CA2992464A1 CA 2992464 A1 CA2992464 A1 CA 2992464A1 CA 2992464 A CA2992464 A CA 2992464A CA 2992464 A CA2992464 A CA 2992464A CA 2992464 A1 CA2992464 A1 CA 2992464A1
Authority
CA
Canada
Prior art keywords
laser
laser beam
brightness
combined
beams
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CA2992464A
Other languages
English (en)
French (fr)
Inventor
Mark Zediker
Matthew SILVA SA
Jean Michel Pelaprat
David Hill
Mathew Finuf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuburu Inc
Original Assignee
Nuburu Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuburu Inc filed Critical Nuburu Inc
Publication of CA2992464A1 publication Critical patent/CA2992464A1/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures
    • H01S5/4062Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0905Dividing and/or superposing multiple light beams
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0916Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers
    • G02B27/0922Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers the semiconductor light source comprising an array of light emitters
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938Using specific optical elements
    • G02B27/0977Reflective elements
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10Beam splitting or combining systems
    • G02B27/108Beam splitting or combining systems for sampling a portion of a beam or combining a small beam in a larger one, e.g. wherein the area ratio or power ratio of the divided beams significantly differs from unity, without spectral selectivity
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/04Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings formed by bundles of fibres
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/30Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects
    • H01S3/302Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects in an optical fibre
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0225Out-coupling of light
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/02325Mechanically integrated components on mount members or optical micro-benches
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/02Optical fibres with cladding with or without a coating
    • G02B6/02042Multicore optical fibres
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/30Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/005Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02208Mountings; Housings characterised by the shape of the housings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0225Out-coupling of light
    • H01S5/02251Out-coupling of light using optical fibres
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0225Out-coupling of light
    • H01S5/02255Out-coupling of light using beam deflecting elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02407Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423Liquid cooling, e.g. a liquid cools a mount of the laser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures
    • H01S5/4043Edge-emitting structures with vertically stacked active layers
    • H01S5/405Two-dimensional arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00Technologies related to metal processing
    • Y02P10/25Process efficiency

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Laser Beam Processing (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Semiconductor Lasers (AREA)
  • Powder Metallurgy (AREA)
  • Recrystallisation Techniques (AREA)
CA2992464A 2015-07-15 2016-07-14 Applications, methods and systems for a laser deliver addressable array Pending CA2992464A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562193047P 2015-07-15 2015-07-15
US62/193,047 2015-07-15
PCT/US2016/042363 WO2017011706A1 (en) 2015-07-15 2016-07-14 Applications, methods and systems for a laser deliver addressable array

Publications (1)

Publication Number Publication Date
CA2992464A1 true CA2992464A1 (en) 2017-01-19

Family

ID=57757621

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2992464A Pending CA2992464A1 (en) 2015-07-15 2016-07-14 Applications, methods and systems for a laser deliver addressable array

Country Status (7)

Country Link
EP (1) EP3323179A4 (cg-RX-API-DMAC7.html)
JP (3) JP2018530768A (cg-RX-API-DMAC7.html)
KR (3) KR20230042412A (cg-RX-API-DMAC7.html)
CN (2) CN107851970B (cg-RX-API-DMAC7.html)
CA (1) CA2992464A1 (cg-RX-API-DMAC7.html)
RU (2) RU2735581C2 (cg-RX-API-DMAC7.html)
WO (1) WO2017011706A1 (cg-RX-API-DMAC7.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2735581C2 (ru) * 2015-07-15 2020-11-03 Нубуру, Инк. Применения, способы и системы для доставки лазерного излучения адресуемой матрицы
US10804680B2 (en) * 2017-06-13 2020-10-13 Nuburu, Inc. Very dense wavelength beam combined laser system
IT201800010009A1 (it) * 2018-11-02 2020-05-02 Quanta System Spa Sistema di trasporto di un fascio laser
CN111694160A (zh) * 2019-03-13 2020-09-22 深圳市联赢激光股份有限公司 一种激光光源装置
JPWO2021024890A1 (cg-RX-API-DMAC7.html) * 2019-08-02 2021-02-11
CN113391266B (zh) * 2021-05-28 2023-04-18 南京航空航天大学 基于非圆多嵌套阵降维子空间数据融合的直接定位方法
US20250096534A1 (en) * 2021-07-26 2025-03-20 Daylight Solutions, Inc. High power laser assembly with accurate pointing in the far field
WO2023146431A1 (ru) * 2022-01-28 2023-08-03 Федеральное Государственное Унитарное Предприятие "Российский Федеральный Ядерный Центр - Всероссийский Научно - Исследовательский Институт Технической Физики Имени Академика Е.И. Забабахина" Волоконный лазер для медицины
CN114888303B (zh) * 2022-05-09 2024-03-15 广东粤港澳大湾区硬科技创新研究院 一种蓝色激光增材制造装置

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5729568A (en) * 1993-01-22 1998-03-17 Deutsche Forschungsanstalt Fuer Luft-Und Raumfahrt E.V. Power-controlled, fractal laser system
WO1997031284A1 (de) * 1996-02-23 1997-08-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Anordnung zur formung des geometrischen querschnitts mehrerer festkörper- und/oder halbleiterlaser
US5864644A (en) * 1997-07-21 1999-01-26 Lucent Technologies Inc. Tapered fiber bundles for coupling light into and out of cladding-pumped fiber devices
JP3831082B2 (ja) * 1997-08-27 2006-10-11 浜松ホトニクス株式会社 集光装置
US5987043A (en) * 1997-11-12 1999-11-16 Opto Power Corp. Laser diode arrays with offset components
US6222973B1 (en) * 1999-01-15 2001-04-24 D-Star Technologies, Inc. Fabrication of refractive index patterns in optical fibers having protective optical coatings
JP2003080604A (ja) * 2001-09-10 2003-03-19 Fuji Photo Film Co Ltd 積層造形装置
US6975659B2 (en) 2001-09-10 2005-12-13 Fuji Photo Film Co., Ltd. Laser diode array, laser device, wave-coupling laser source, and exposure device
JP2003158332A (ja) * 2001-09-10 2003-05-30 Fuji Photo Film Co Ltd レーザーダイオードアレイ、レーザー装置、合波レーザー光源および露光装置
US6714581B2 (en) * 2001-10-01 2004-03-30 Christopher J. Corcoran Compact phase locked laser array and related techniques
US7830945B2 (en) * 2002-07-10 2010-11-09 Fujifilm Corporation Laser apparatus in which laser diodes and corresponding collimator lenses are fixed to block, and fiber module in which laser apparatus is coupled to optical fiber
US7006549B2 (en) * 2003-06-11 2006-02-28 Coherent, Inc. Apparatus for reducing spacing of beams delivered by stacked diode-laser bars
EP1771927A1 (en) * 2004-06-01 2007-04-11 Trumpf Photonics, Inc. Optimum matching of the output of a two-dimensional laser array stack to an optical fiber
JP2007103704A (ja) * 2005-10-05 2007-04-19 Nichia Chem Ind Ltd 発光装置、レーザディスプレイ、内視鏡
FR2893872B1 (fr) * 2005-11-25 2008-10-17 Air Liquide Procede de coupage avec un laser a fibre d'acier c-mn
JP2007317871A (ja) * 2006-05-25 2007-12-06 Sony Corp レーザ装置
US7515346B2 (en) * 2006-07-18 2009-04-07 Coherent, Inc. High power and high brightness diode-laser array for material processing applications
JP4916392B2 (ja) * 2007-06-26 2012-04-11 パナソニック株式会社 三次元形状造形物の製造方法及び製造装置
US20090122272A1 (en) * 2007-11-09 2009-05-14 Silverstein Barry D Projection apparatus using solid-state light source array
US7948680B2 (en) * 2007-12-12 2011-05-24 Northrop Grumman Systems Corporation Spectral beam combination using broad bandwidth lasers
US8049966B2 (en) * 2008-11-04 2011-11-01 Massachusetts Institute Of Technology External-cavity one-dimensional multi-wavelength beam combining of two-dimensional laser elements
EP2430781A4 (en) * 2009-05-11 2013-06-19 Ofs Fitel Llc SYSTEMS AND METHODS FOR SUPPRESSING RETURNS IN CASCADED HIGH-PERFORMANCE RAM FIBER LASERS
JP5375532B2 (ja) * 2009-11-11 2013-12-25 コニカミノルタ株式会社 集積光源、プロジェクタ装置、及びモバイル機器
JP5981855B2 (ja) * 2010-03-05 2016-08-31 テラダイオード, インコーポレーテッド 波長ビーム結合システムおよび方法
US20110305250A1 (en) * 2010-03-05 2011-12-15 TeraDiode, Inc. Wavelength beam combining based pulsed lasers
US8724222B2 (en) * 2010-10-31 2014-05-13 TeraDiode, Inc. Compact interdependent optical element wavelength beam combining laser system and method
CN102468602A (zh) * 2010-11-17 2012-05-23 北京中视中科光电技术有限公司 一种半导体激光光源
US20130162952A1 (en) * 2010-12-07 2013-06-27 Laser Light Engines, Inc. Multiple Laser Projection System
US9025635B2 (en) * 2011-01-24 2015-05-05 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a support member
US9595813B2 (en) * 2011-01-24 2017-03-14 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a substrate member
US9014220B2 (en) * 2011-03-10 2015-04-21 Coherent, Inc. High-power CW fiber-laser
US8824513B2 (en) * 2011-06-14 2014-09-02 Bae Systems Information And Electronic Systems Integration Inc. Method for beam combination by seeding stimulated brillouin scattering in optical fiber
DE102012100233B4 (de) * 2012-01-12 2014-05-15 Schott Ag Hochtransmittive Gläser mit hoher Solarisationsbeständigkeit, ihre Verwendung und Verfahren zu ihrer Herstellung
JP5764152B2 (ja) * 2013-02-13 2015-08-12 株式会社フジクラ 半導体レーザ装置
JP6036479B2 (ja) * 2013-03-28 2016-11-30 ウシオ電機株式会社 半導体レーザ装置
JP6334682B2 (ja) * 2013-04-29 2018-05-30 ヌブル インク 三次元プリンティングのための装置、システムおよび方法
US9306369B2 (en) * 2013-11-22 2016-04-05 Trumpf Laser Gmbh Wavelength selective external resonator and beam combining system for dense wavelength beam combining laser
RU2735581C2 (ru) * 2015-07-15 2020-11-03 Нубуру, Инк. Применения, способы и системы для доставки лазерного излучения адресуемой матрицы

Also Published As

Publication number Publication date
RU2018105599A3 (cg-RX-API-DMAC7.html) 2019-08-15
KR102513216B1 (ko) 2023-03-22
EP3323179A1 (en) 2018-05-23
RU2735581C2 (ru) 2020-11-03
JP2024020355A (ja) 2024-02-14
RU2020111447A (ru) 2020-04-22
KR20220029781A (ko) 2022-03-08
CN113067252A (zh) 2021-07-02
CN107851970B (zh) 2021-04-27
WO2017011706A1 (en) 2017-01-19
KR102370083B1 (ko) 2022-03-03
KR20230042412A (ko) 2023-03-28
RU2719337C2 (ru) 2020-04-17
JP2021073681A (ja) 2021-05-13
RU2018105599A (ru) 2019-08-15
KR20180030588A (ko) 2018-03-23
EP3323179A4 (en) 2019-06-19
CN107851970A (zh) 2018-03-27
JP2018530768A (ja) 2018-10-18
RU2020111447A3 (cg-RX-API-DMAC7.html) 2020-10-02

Similar Documents

Publication Publication Date Title
US20240348012A1 (en) Applications, Methods and Systems for a Laser Deliver Addressable Array
CA2992464A1 (en) Applications, methods and systems for a laser deliver addressable array
US20200086388A1 (en) Additive Manufacturing System with Addressable Array of Lasers and Real Time Feedback Control of each Source
KR102747524B1 (ko) 주소지정 가능한 레이저 어레이 및 각각의 소스에 대한 실시간 피드백 제어를 갖춘 적층 제작 시스템
US10418774B2 (en) Spectrally multiplexing diode pump modules to improve brightness
EP3037246B1 (en) Composite beam generator and powder melting or sintering method using the same
KR102416499B1 (ko) 매우 조밀한 파장 빔 조합 레이저 시스템
KR20160003778A (ko) 3차원 인쇄 장치, 시스템 및 방법
EP3812078A1 (en) Welding method and welding device
JP2017185502A (ja) レーザ加工機
CN114514086A (zh) 双波长激光系统和使用这种系统的材料处理
Hengesbach et al. Brightness and average power as driver for advancements in diode lasers and their applications
JP6143940B2 (ja) 線形強度分布を有するレーザビームを生成するための装置
JP4112745B2 (ja) レーザーラインパターンニング方法
CN111799655A (zh) 高功率半导体激光器
KR101828242B1 (ko) 선형 레이저 가공 장치
RU2793043C2 (ru) Система аддитивного производства с адресуемым массивом лазеров и управлением с обратной связью в реальном времени каждым источником
JP2006024860A (ja) レーザ照射装置及びレーザ照射におけるレンズ調整方法
US20110116523A1 (en) Method of beam formatting se-dfb laser array
Bachmann et al. Chances and Limitations of High Power Diode Lasers—Results of Research and Development in Germany—
Bachmann Diode Laser Systems

Legal Events

Date Code Title Description
EEER Examination request

Effective date: 20210706

EEER Examination request

Effective date: 20210706

EEER Examination request

Effective date: 20210706

EEER Examination request

Effective date: 20210706

EEER Examination request

Effective date: 20210706

EEER Examination request

Effective date: 20210706

EEER Examination request

Effective date: 20210706

EEER Examination request

Effective date: 20210706