CA2613195A1 - Matrices et detecteurs haute sensibilite, haute resolution - Google Patents
Matrices et detecteurs haute sensibilite, haute resolution Download PDFInfo
- Publication number
- CA2613195A1 CA2613195A1 CA002613195A CA2613195A CA2613195A1 CA 2613195 A1 CA2613195 A1 CA 2613195A1 CA 002613195 A CA002613195 A CA 002613195A CA 2613195 A CA2613195 A CA 2613195A CA 2613195 A1 CA2613195 A1 CA 2613195A1
- Authority
- CA
- Canada
- Prior art keywords
- layer
- avalanche
- integrator
- governor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000003491 array Methods 0.000 title abstract description 7
- 230000035945 sensitivity Effects 0.000 title description 13
- 239000000758 substrate Substances 0.000 claims abstract description 188
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- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 12
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 47
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- 229910052681 coesite Inorganic materials 0.000 description 39
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- 229910052905 tridymite Inorganic materials 0.000 description 39
- 230000005684 electric field Effects 0.000 description 16
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000004020 conductor Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
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- 229910008062 Si-SiO2 Inorganic materials 0.000 description 2
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- 229910020169 SiOa Inorganic materials 0.000 description 1
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- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
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- 229920006395 saturated elastomer Polymers 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J47/00—Tubes for determining the presence, intensity, density or energy of radiation or particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US68941705P | 2005-06-10 | 2005-06-10 | |
| US60/689,417 | 2005-06-10 | ||
| US69193105P | 2005-06-17 | 2005-06-17 | |
| US60/691,931 | 2005-06-17 | ||
| PCT/US2006/022316 WO2006135683A2 (fr) | 2005-06-10 | 2006-06-10 | Matrices et detecteurs haute sensibilite, haute resolution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2613195A1 true CA2613195A1 (fr) | 2006-12-21 |
Family
ID=37532813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002613195A Abandoned CA2613195A1 (fr) | 2005-06-10 | 2006-06-10 | Matrices et detecteurs haute sensibilite, haute resolution |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP1894223A2 (fr) |
| JP (1) | JP2008544496A (fr) |
| KR (1) | KR20080074084A (fr) |
| CA (1) | CA2613195A1 (fr) |
| IL (1) | IL188040A0 (fr) |
| RU (1) | RU2406181C2 (fr) |
| WO (1) | WO2006135683A2 (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4413940B2 (ja) | 2007-03-22 | 2010-02-10 | 株式会社東芝 | 固体撮像素子、単板カラー固体撮像素子及び電子機器 |
| DE102011077383A1 (de) * | 2011-06-10 | 2012-12-13 | Siemens Aktiengesellschaft | Anordnung von zwei oder mehr Halbleiterbauelementen |
| JP6090060B2 (ja) * | 2013-08-23 | 2017-03-08 | 株式会社豊田中央研究所 | シングルフォトンアバランシェダイオード |
| RU2641620C1 (ru) * | 2016-09-20 | 2018-01-18 | Общество с ограниченной ответственностью "ДЕтектор Фотонный Аналоговый" | Лавинный фотодетектор |
| JP2017005276A (ja) * | 2016-09-30 | 2017-01-05 | 株式会社豊田中央研究所 | シングルフォトンアバランシェダイオード |
| US11089251B2 (en) * | 2018-07-12 | 2021-08-10 | Canon Kabushiki Kaisha | Image sensor and image capturing apparatus |
| RU2731665C1 (ru) * | 2019-03-12 | 2020-09-07 | Общество С Ограниченной Ответственностью "Детектор Фотонный Аналоговый" (Ооо "Дефан") | Лавинный фотодетектор (варианты) и способ его изготовления (варианты) |
| RU2732695C1 (ru) * | 2019-03-12 | 2020-09-21 | Общество С Ограниченной Ответственностью "Детектор Фотонный Аналоговый" (Ооо "Дефан") | Лавинный фотодетектор (варианты) и способ его изготовления (варианты) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3806772A (en) * | 1972-02-07 | 1974-04-23 | Fairchild Camera Instr Co | Charge coupled amplifier |
| US5610416A (en) * | 1995-02-16 | 1997-03-11 | Hewlett-Packard Company | Avalanche photodiode with epitaxially regrown guard rings |
| US6642650B1 (en) * | 1998-11-10 | 2003-11-04 | Agfa-Gevaert | Refusable personal monitoring device |
| GB2367945B (en) * | 2000-08-16 | 2004-10-20 | Secr Defence | Photodetector circuit |
| ATE507585T1 (de) * | 2000-10-19 | 2011-05-15 | Quantum Semiconductor Llc | Verfahren zur herstellung von mit cmos integrierten heteroübergang-photodioden |
| US6885827B2 (en) * | 2002-07-30 | 2005-04-26 | Amplification Technologies, Inc. | High sensitivity, high resolution detection of signals |
| US20040245592A1 (en) * | 2003-05-01 | 2004-12-09 | Yale University | Solid state microchannel plate photodetector |
-
2006
- 2006-06-10 RU RU2008100029/07A patent/RU2406181C2/ru not_active IP Right Cessation
- 2006-06-10 CA CA002613195A patent/CA2613195A1/fr not_active Abandoned
- 2006-06-10 EP EP06772574A patent/EP1894223A2/fr not_active Withdrawn
- 2006-06-10 JP JP2008515920A patent/JP2008544496A/ja active Pending
- 2006-06-10 WO PCT/US2006/022316 patent/WO2006135683A2/fr active Application Filing
- 2006-06-10 KR KR1020087000807A patent/KR20080074084A/ko not_active Application Discontinuation
-
2007
- 2007-12-10 IL IL188040A patent/IL188040A0/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2006135683A2 (fr) | 2006-12-21 |
| WO2006135683A3 (fr) | 2007-03-22 |
| KR20080074084A (ko) | 2008-08-12 |
| JP2008544496A (ja) | 2008-12-04 |
| RU2406181C2 (ru) | 2010-12-10 |
| EP1894223A2 (fr) | 2008-03-05 |
| IL188040A0 (en) | 2008-03-20 |
| RU2008100029A (ru) | 2009-07-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| FZDE | Discontinued |
Effective date: 20130611 |