IL188040A0 - High sensitivity, high resolution detector devices and arrays - Google Patents
High sensitivity, high resolution detector devices and arraysInfo
- Publication number
- IL188040A0 IL188040A0 IL188040A IL18804007A IL188040A0 IL 188040 A0 IL188040 A0 IL 188040A0 IL 188040 A IL188040 A IL 188040A IL 18804007 A IL18804007 A IL 18804007A IL 188040 A0 IL188040 A0 IL 188040A0
- Authority
- IL
- Israel
- Prior art keywords
- arrays
- detector devices
- resolution detector
- high resolution
- high sensitivity
- Prior art date
Links
- 238000003491 array Methods 0.000 title 1
- 230000035945 sensitivity Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J47/00—Tubes for determining the presence, intensity, density or energy of radiation or particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US68941705P | 2005-06-10 | 2005-06-10 | |
US69193105P | 2005-06-17 | 2005-06-17 | |
PCT/US2006/022316 WO2006135683A2 (fr) | 2005-06-10 | 2006-06-10 | Matrices et detecteurs haute sensibilite, haute resolution |
Publications (1)
Publication Number | Publication Date |
---|---|
IL188040A0 true IL188040A0 (en) | 2008-03-20 |
Family
ID=37532813
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL188040A IL188040A0 (en) | 2005-06-10 | 2007-12-10 | High sensitivity, high resolution detector devices and arrays |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1894223A2 (fr) |
JP (1) | JP2008544496A (fr) |
KR (1) | KR20080074084A (fr) |
CA (1) | CA2613195A1 (fr) |
IL (1) | IL188040A0 (fr) |
RU (1) | RU2406181C2 (fr) |
WO (1) | WO2006135683A2 (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4413940B2 (ja) | 2007-03-22 | 2010-02-10 | 株式会社東芝 | 固体撮像素子、単板カラー固体撮像素子及び電子機器 |
DE102011077383A1 (de) * | 2011-06-10 | 2012-12-13 | Siemens Aktiengesellschaft | Anordnung von zwei oder mehr Halbleiterbauelementen |
JP6090060B2 (ja) * | 2013-08-23 | 2017-03-08 | 株式会社豊田中央研究所 | シングルフォトンアバランシェダイオード |
RU2641620C1 (ru) * | 2016-09-20 | 2018-01-18 | Общество с ограниченной ответственностью "ДЕтектор Фотонный Аналоговый" | Лавинный фотодетектор |
JP2017005276A (ja) * | 2016-09-30 | 2017-01-05 | 株式会社豊田中央研究所 | シングルフォトンアバランシェダイオード |
US11089251B2 (en) * | 2018-07-12 | 2021-08-10 | Canon Kabushiki Kaisha | Image sensor and image capturing apparatus |
RU2732695C1 (ru) * | 2019-03-12 | 2020-09-21 | Общество С Ограниченной Ответственностью "Детектор Фотонный Аналоговый" (Ооо "Дефан") | Лавинный фотодетектор (варианты) и способ его изготовления (варианты) |
RU2731665C1 (ru) * | 2019-03-12 | 2020-09-07 | Общество С Ограниченной Ответственностью "Детектор Фотонный Аналоговый" (Ооо "Дефан") | Лавинный фотодетектор (варианты) и способ его изготовления (варианты) |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3806772A (en) * | 1972-02-07 | 1974-04-23 | Fairchild Camera Instr Co | Charge coupled amplifier |
US5610416A (en) * | 1995-02-16 | 1997-03-11 | Hewlett-Packard Company | Avalanche photodiode with epitaxially regrown guard rings |
US6642650B1 (en) * | 1998-11-10 | 2003-11-04 | Agfa-Gevaert | Refusable personal monitoring device |
GB2367945B (en) * | 2000-08-16 | 2004-10-20 | Secr Defence | Photodetector circuit |
AU2001295618A1 (en) * | 2000-10-19 | 2002-04-29 | Carlos J. R. P. Augusto | Method of fabricating heterojunction photodiodes integrated with cmos |
US6885827B2 (en) * | 2002-07-30 | 2005-04-26 | Amplification Technologies, Inc. | High sensitivity, high resolution detection of signals |
US20040245592A1 (en) * | 2003-05-01 | 2004-12-09 | Yale University | Solid state microchannel plate photodetector |
-
2006
- 2006-06-10 RU RU2008100029/07A patent/RU2406181C2/ru not_active IP Right Cessation
- 2006-06-10 EP EP06772574A patent/EP1894223A2/fr not_active Withdrawn
- 2006-06-10 KR KR1020087000807A patent/KR20080074084A/ko not_active Application Discontinuation
- 2006-06-10 WO PCT/US2006/022316 patent/WO2006135683A2/fr active Application Filing
- 2006-06-10 JP JP2008515920A patent/JP2008544496A/ja active Pending
- 2006-06-10 CA CA002613195A patent/CA2613195A1/fr not_active Abandoned
-
2007
- 2007-12-10 IL IL188040A patent/IL188040A0/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO2006135683A2 (fr) | 2006-12-21 |
EP1894223A2 (fr) | 2008-03-05 |
WO2006135683A3 (fr) | 2007-03-22 |
JP2008544496A (ja) | 2008-12-04 |
KR20080074084A (ko) | 2008-08-12 |
CA2613195A1 (fr) | 2006-12-21 |
RU2008100029A (ru) | 2009-07-20 |
RU2406181C2 (ru) | 2010-12-10 |
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