IL188040A0 - High sensitivity, high resolution detector devices and arrays - Google Patents

High sensitivity, high resolution detector devices and arrays

Info

Publication number
IL188040A0
IL188040A0 IL188040A IL18804007A IL188040A0 IL 188040 A0 IL188040 A0 IL 188040A0 IL 188040 A IL188040 A IL 188040A IL 18804007 A IL18804007 A IL 18804007A IL 188040 A0 IL188040 A0 IL 188040A0
Authority
IL
Israel
Prior art keywords
arrays
detector devices
resolution detector
high resolution
high sensitivity
Prior art date
Application number
IL188040A
Other languages
English (en)
Original Assignee
Amplification Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Amplification Technologies Inc filed Critical Amplification Technologies Inc
Publication of IL188040A0 publication Critical patent/IL188040A0/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J47/00—Tubes for determining the presence, intensity, density or energy of radiation or particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
IL188040A 2005-06-10 2007-12-10 High sensitivity, high resolution detector devices and arrays IL188040A0 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US68941705P 2005-06-10 2005-06-10
US69193105P 2005-06-17 2005-06-17
PCT/US2006/022316 WO2006135683A2 (fr) 2005-06-10 2006-06-10 Matrices et detecteurs haute sensibilite, haute resolution

Publications (1)

Publication Number Publication Date
IL188040A0 true IL188040A0 (en) 2008-03-20

Family

ID=37532813

Family Applications (1)

Application Number Title Priority Date Filing Date
IL188040A IL188040A0 (en) 2005-06-10 2007-12-10 High sensitivity, high resolution detector devices and arrays

Country Status (7)

Country Link
EP (1) EP1894223A2 (fr)
JP (1) JP2008544496A (fr)
KR (1) KR20080074084A (fr)
CA (1) CA2613195A1 (fr)
IL (1) IL188040A0 (fr)
RU (1) RU2406181C2 (fr)
WO (1) WO2006135683A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4413940B2 (ja) 2007-03-22 2010-02-10 株式会社東芝 固体撮像素子、単板カラー固体撮像素子及び電子機器
DE102011077383A1 (de) * 2011-06-10 2012-12-13 Siemens Aktiengesellschaft Anordnung von zwei oder mehr Halbleiterbauelementen
JP6090060B2 (ja) * 2013-08-23 2017-03-08 株式会社豊田中央研究所 シングルフォトンアバランシェダイオード
RU2641620C1 (ru) * 2016-09-20 2018-01-18 Общество с ограниченной ответственностью "ДЕтектор Фотонный Аналоговый" Лавинный фотодетектор
JP2017005276A (ja) * 2016-09-30 2017-01-05 株式会社豊田中央研究所 シングルフォトンアバランシェダイオード
US11089251B2 (en) * 2018-07-12 2021-08-10 Canon Kabushiki Kaisha Image sensor and image capturing apparatus
RU2732695C1 (ru) * 2019-03-12 2020-09-21 Общество С Ограниченной Ответственностью "Детектор Фотонный Аналоговый" (Ооо "Дефан") Лавинный фотодетектор (варианты) и способ его изготовления (варианты)
RU2731665C1 (ru) * 2019-03-12 2020-09-07 Общество С Ограниченной Ответственностью "Детектор Фотонный Аналоговый" (Ооо "Дефан") Лавинный фотодетектор (варианты) и способ его изготовления (варианты)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3806772A (en) * 1972-02-07 1974-04-23 Fairchild Camera Instr Co Charge coupled amplifier
US5610416A (en) * 1995-02-16 1997-03-11 Hewlett-Packard Company Avalanche photodiode with epitaxially regrown guard rings
US6642650B1 (en) * 1998-11-10 2003-11-04 Agfa-Gevaert Refusable personal monitoring device
GB2367945B (en) * 2000-08-16 2004-10-20 Secr Defence Photodetector circuit
AU2001295618A1 (en) * 2000-10-19 2002-04-29 Carlos J. R. P. Augusto Method of fabricating heterojunction photodiodes integrated with cmos
US6885827B2 (en) * 2002-07-30 2005-04-26 Amplification Technologies, Inc. High sensitivity, high resolution detection of signals
US20040245592A1 (en) * 2003-05-01 2004-12-09 Yale University Solid state microchannel plate photodetector

Also Published As

Publication number Publication date
WO2006135683A2 (fr) 2006-12-21
EP1894223A2 (fr) 2008-03-05
WO2006135683A3 (fr) 2007-03-22
JP2008544496A (ja) 2008-12-04
KR20080074084A (ko) 2008-08-12
CA2613195A1 (fr) 2006-12-21
RU2008100029A (ru) 2009-07-20
RU2406181C2 (ru) 2010-12-10

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