CA2613195A1 - High sensitivity, high resolution detector devices and arrays - Google Patents

Abstract

Avalanche amplification structures (1) including electrodes (2) and (8), an avalanche region (3), a quantifier (4), an integrator (5), a governor (6), and a substrate (7) arranged to detect a weak signal composed of as few as several electrons are presented. Quantifier (4) regulates the avalanche process.
Integrator (5) accumulates a signal charge. Governor (6) drains the integrator (5) and controls the quantifier (4). Avalanche amplifying structures (1) include: normal quantifier, reverse bias designs; normal quantifier, normal bias designs; lateral quantifier, normal bias designs; changeable quantifier, normal bias, adjusting electrode designs; normal quantifier, normal bias, adjusting electrode designs; and lateral quantifier, normal bias, annular integrator designs. Avalanche amplification structures (1) are likewise arranged to provide arrays of multi-channel devices. Structures have immediately applicability to devices critical to homeland defense.

Description

2 High-Sensitivity, High-Resolution Detector Devices and Arrays

3 DESCRIPTION

4 1. Technical Field The present invention relates to single-channel and multi-channel detectors 6 capable of recording low-level signals which may include as few as several electrons.
7 Specifically, the invention is an amplifying avalanche device wherein amplification is 8 realized via a multi-layered, solid-state intelligent amplifier design.
9 2. Background Art The detection and recording of low-level signals is particularly challenging to 11 sensor devices. For example, the sensitivity, selectivity, operational range, and arrayed 12 arrangements of such devices require precision deteCtion of signals comprising as few 13 as several electrons.
14 One widespread approach for detecting and recording low-level signals includes charge-sensitive amplifiers on field-effect transistors having a threshold 16 sensitivity of a few dozen electrons, as described by Albert J. P.
Theuwissen in Solid-17 State Imaging with Charge-Coupled Device, published by K].uwer in 1995 (ISBN 0-18 7923-3456-6).
19 Another approach includes output video signal amplifiers in a charge coupled device ensuring nearly the same sensitivity as charge-sensitive amplifiers on field-effect 21 transistors.
22 Yet another approach to sensing weak electrical signals is the use of avalanche 23 amplification or multiplication of signal carriers, which generally is the most sensitive 24 and high-speed method of amplification. Avalanche-type devices include those described by F. Capasso in Physics of Avalanche Photodiodes ifi Semiconductors and 26 Semimetals, published by Academic Press in 1985 Vol. 22.
27 Avalanche amplification is based on impact ionization arising in a strong 28 electric field, wherein the signal carriers accelerating in an electric field ionize the 29 atoms of the worldng medium of the amplifier, thus resulting in multiplication (e.g., duplication) of the signal carriers. At a high multiplication factor, however, it is 31 difficult to stabilize the avalanche amplification operating point.
Additionally, the .. ..... ..
1 internal (excessive) noise level and response time grow rapidly with an increasing 2 multiplication factor. As such, traditional avalanche photodiodes use a rather low 3 multiplication factor, M, typically less than 103, which prevents the detection and 4 recording of signals consisting of several electrons in a wide band.
Avalanche multiplication has also been applied to recording individual ionizing 6 particles using a Geiger-Muller counter, as described by Ekstrom in USPN
4,303,861.
7 A particle entering such a device initiates an avalanche-like process of multiplication of 8 the signal carriers up to a necessary recording level. More recently, this principle has 9 been successfully used for recording single clxarge carriers in semiconductor avalanche-type photodiodes. This Geiger-Muller principle of amplification, however, 11 does not allow for distinguishing between signals within one or several input charge 12 carriers (i.e., it does not provide high resolution for a number of charge carriers).
13 Shushakov et al. in USPN 6,885,827 describes and claims a system and 14 method for the detection of an input signal by distributing the input signal into independent signal components which are independently amplif ed, thus uniquely 16 enabling a high amplif cation factor, low noise, and rapid response speed.
The 17 invention includes several steps. A signal is allocated on individual channels of a multi-18 channel threshold amplifier in such a manner that each channel has only one elementary 19 electric charge. Each channel of the amplifier converts the single electron at the input into a calibrated charge packet at the output. Summation of the output signals of each 21 channel allows the measurement of the value of the few electron electric signals 22 communicated to the input of a discrete amplifiier with high accuracy. The calibrated 23 amplification of a single electron at each channel of the discrete amplifier is provided.
24 In addition to a threshold avalanche amplifier, each channel is equipped with an integrator to accumulate an amplified charge signal packet. After receiving a required 26 charge packet, an integrator communicates with a quantifier through a governor, 27 which turns the channel OFF. A governor is used to control the potential of the 28 quantifier and to drain the charge from the integrator for the purpose of transferring 29 the channel back to its initial state.
It may be appreciated, therefore, that there remains a need for further 31 advancements and improvements thus enabling the detection of weak signals.

. ..... ..... ...... .. ,,,,,,. ...... .
1 Accordingly, what is required are amplifying avalanche structures, compatible with the 2 system and method provided by Shushakov et al. in USPN 6,885,827, capable of 3 further advancing and improving the detection of weak signals.
4 3. Disclosure of the Invention An object of the present invention is to provide amplifying avalanche structures 6 compatible with the system and method provided by Shushalcov et al. in USPN
7 6,885,827 and capable of further advancing and improving the detection of weak 8 signals.
9 In accordance with the present invention, various embodiments of the amplifying avalanche structure are disclosed operating based on the principles 11 described by Shushakov et al. The present invention includes transparent and non-12 transparent electrodes, avalanche region, quantifier, integrator, governor, and 13 substrate arranged to detect a weak signal composed of as few as several electrons.
14 Avalanche amplifying structures include: normal quantifier, reverse bias designs;
normal quantifier, normal bias designs; lateral quantifier, normal bias designs;
16 changeable quantifier, normal bias, adjusting electrode designs; normal quantifier, 17 normal bias, adjusting electrode designs; and lateral quantifier, normal bias, annular 18 integrator designs. Amplifqing structures are likewise arranged to form multi-channel 19 devices.

In accordance with several embodiments of the invention, the amplifying 21 avalanche structure operating in the Geiger mode includes two electrodes, an 22 avalanche region, an integrator for the accumulation of a signal charge, a quantifier for 23 turning the avalanche process ON and OFF, and a governor for draining the charge 24 from the integrator consisting of a semiconductor structure disposed on a planar substrate, in which the govemor and integrator are disposed sequentially behind one of 26 the electrodes, the avalanche region adjoins the edge periphery of the integrator area in 27 such a manner that there is no electric contact between the avalanche region and the 28 governor, and the quantifier is provided by the integrator surface adjoining the 29 avalanche region. The governor may be composed of the same semiconductor material as the avalanche region but with less doping or having a wider band gap. The substrate 31 on the lower side of the amplifying avalanche structure may be a highly doped layer 1 having the same type of conductivity and composed of the same semiconductor 2 material as the avalanche region. The substrate may also be composed of a 3 semiconductor material of the same conductivity type as, but less doped than, the 4 avalanche region material. On the lower contact side, the substrate may have a highly doped contact layer of the same conductivity type as the avalanche region.

6 In accordance with other embodiments of the invention, the contact to the 7 avalanche region can be effected through an electrode disposed on the baclc or bottom 8 side of the substrate or through an electrode disposed on the upper side of the 9 substrate.

In accordance with other embodiments of the invention, the entire upper 11 surface of the amplifying avalanche structure may be covered with a dielectric layer, 12 except for the areas on which the governor is disposed.

13 In accordance with other embodiments of the invention, the dielectric layer is 14 disposed on the upper surfaces of the integrator and avalanche region, and the electrode contacting the governor layer occupies the entire upper surface of the 16 avalanche structure or the governor with upper electrode is disposed along the surface 17 of the avalanche structure.

18 In accordance with other embodiments of the invention, the upper electrode 19 may be disposed along the entire surface of the avalanche structure and the electrode may be transparent.

21 In accordance with other embodiments of the invention, the amplifying 22 avalanche structure may include a signal-transport layer disposed along one side of the 23 avalanche region and composed of the same semiconductor material and conductivity 24 type with at most as much doping as the avalanche region or having a narrower band gap than the avalanche region. The substrate and a.111ayers may be composed of the 26 same semiconductor material, examples including Si, SiC, GaN, GaAs and GaP.
27 In accordance with other embodiments of the invention, the amplifying 28 avalanche structure may have an additional conductive contact area disposed between 29 the integrator and the governor in such a manner that it has no direct electric contact with the avalanche region and a blocking layer on the upper surfaces of the integrator 1 and avalanche region having no electric contact with the upper electrode contacting 2 the governor. The dielectric layer may be applied onto the entire upper surface of the 3 blocking layer and the upper electrode contacting the governor can occupy the entire 4 upper surface of the avalanche structure. The bloclcing layer may be composed of a semiconductor material of the same conductivity type and have at most as much 6 doping as the avalanche region. The bloclcing layer may be composed of a 7 semiconductor material of the opposite conductivity type and have less doping than 8 the avalanche region. The substrate and all layers may be composed of the same 9 semiconductor materital, examples including Si, SiC, GaN, GaAs and GaP.

In accordance with other embodiments of the invention, the avalanche 11 amplifying structure operating in the Geiger mode disposed along a planar substrate 12 includes two electrodes, a governor disposed between the substrate and the upper first 13 electrode, an integrator disposed on the side periphery of the govemor, and an 14 avalanche region disposed on the external side periphery of the integrator wherein the quantifier is performed by the integrator surface adjoining the avalanche region. The 16 substrate is made of a material with the same conductance type as the avalanche 17 region, but with a higher resistivity. The amplifying structure may include a dielectric 18 layer disposed along the upper surfaces of the integrator and avalanche region, and the 19 upper first electrode contacting the govemor layer covers the entire upper surface of the avalanche structure. The amplifying structure on the upper surfaces of the 21 integrator and avalanche region may include a blocking layer comprised of a 22 semiconductor with the same conductance type as the avalanche region, but with a 23 higher resistivity. No electric contact is permitted by the blocking electrode with the 24 upper electrode in contact with the govemor.

In accordance with other embodiments of the invention, the ampfifying 26 avalanche structure operating in the Geiger mode includes two electrodes, an 27 avalanche region, an integrator for the accumulation of a signal charge, a quantifier for 28 turning the avalanche process ON and OFF, and a governor for draining the charge 29 from the integrator, in which the governor and integrator are disposed sequentially behind one of the electrodes, the avalanche region adjoins the edge periphery of the 31 integrator to avoid electric contact by the avalanche region with the governor, and the

5 1 quantifier is provided by the integrator surface adjoining the avalanche region 2 including a third electrode disposed on the dielectric layer contacting the avalanche 3 region. The substrate may be composed of a semiconductor material with the same 4 conductivity type, but less doped, than the avalanche region material.
Furthermore, a conductive contact area may be disposed between the integrator and the governor so

6 as to avoid direct electric contact with the avalanche region and between the surfaces

7 of the integrator and the avalanche region, on the one side, and the dielectric layer, on

8 the other side, a bloclcing layer may be disposed of a semiconductor material of the

9 same conductivity type as that of the avalanche region but with a lower doping impurity concentration.

11 In accordance with other embodiments of the invention, the amplifying 12 avalanche structure operating in the Geiger mode may include an avalanche region, an 13 integrator for the accumulation of a signal charge, a quantifier for tuzning the 14 avalanche process ON and OFF, and a governor for draining the charge from the integrator and controlling the quantifier disposed on a heavily doped substrate between 16 two electrodes, on which there are disposed layers of an avalanche region composed 17 of a material with the same conductivity type but having a higher resistivity. The 18 integrator may be composed of a heavily doped semiconductor material having a 19 conductivity opposite that of the substrate, a governor of a high-impedance semiconductor material, and the quantifier provided at the interface between the 21 avalanche region and integrator. The integrator may have a low conductance in 22 directions parallel to the substrate plane. The substrate and all layers of the amplifying 23 avalanche structure, except the governor, may be composed of the same 24 semiconductor material. The governor layer may be composed of the same material or of a material having a wider band gap than that of which the other layers and the 26 substrate are composed. The amplifying avalanche structure may include a signal-27 transport layer capable of generating free charge carriers and transporting the charges 28 into the avalanche region. The substrate 4nd a layers may be composed of the same 29 semiconductor material, examples including Si, SiC, GaN, GaAs and.GaP.

In accordance with other embodiments of the invention, the avalanche 31 amplifying structure operating in the Geiger mode includes a planar laminated 1 semiconductor structure mounted on a substrate between two electrodes, in which the 2 layers of the avalanche region and governor capable of draining the charge from the 3 integrator and controlling the quantifier are disposed sequentially one after another, 4 and the function of the integrator capable of accumulating a signal charge and the function of the quantifier for turning the avalanche process ON and OFF are 6 performed at the interface between the avalanche region and the governor.
The 7 interface between the avalanche region and governor may have a low conductance in 8 directions parallel to the substrate plane.

9 In accordance with other embodiments of the invention, the avalanche amplifying structure operating in the Geiger mode may consist of a planar laminated 11 semiconductor structure, disposed between two electrodes on a heavily doped 12 substrate on which there are arranged in succession the layers of the avalanche region 13 composed of a semiconductor with the type of conductance opposite that of the 14 substrate, and a governor composed of a high impedance semiconductor material so that the quantifier is provided at the interface between the substrate and avalanche 16 region, and the integrator is provided at the interface between the avalanche region 17 and governor.

18 In accordance with other embodiments of the invention, the avalanche 19 amplifying structure operating in the Geiger mode may consist of a planar laminated semiconductor structure, disposed between two electrodes on a heavily doped 21 substrate, on which there are arranged in succession the layers of a governor 22 composed of a high-impedance semiconductor rnaterial, an integrator composed of a 23 heavily doped material with the same conductance type as the substrate material, and 24 an avalanche region composed of a semiconductor having the conductance type opposite that of the substrate so that the quantifier is provided at the interface between 26 the avalanche region and the integrator. All layers and the substrate may be composed 27 of the same semiconductor material or all layers, except for the governor, may be 28 composed of the same semiconductor material, and the governor layer composed of a 29 material having a wider band gap than the other layers and substrate. A
signal-transport layer may be disposed between the upper electrode and the avalanche region 31 and capable of generating free charge carriers and transporting the charges into the 1 avalanche region. All layers, except for signal-transport layer, may be composed of the 2 same semiconductor material, whereas the signal-transport layer may be composed of 3 a narrower band gap semiconductor material or a high-resistance semiconductor 4 material with the same conductance type as the avalanche region. The substrate and all layers may be composed of the same semiconductor material, examples including Si, 6 SiC, GaN, GaAs and GaP.

7 The ensuing disclosure is set forth to first describe various illustrative 8 individual or single structures which may be used in a standalone manner or may be 9 integrated into matrixes of a discrete amplifier. That is, in principle, each individual structure can be used as a self-contained functional device similar to a Geiger 11 avalanche photodiode, or single photon avalanche diodes (SAPDs), or internal discrete 12 amplifier, but are also particularly well suited for integration to provide a multi-channel 13 internal discrete amplifier, or multi-channel Geiger mode amplifier, or multi-channel 14 SAPD array.

Following the disclosure of illustrative embodiments of the basic, discrete 16 amplifying structures, including illustrative claims corresponding to such and 17 additional structures, there is described various illustrative embodiments of multi-18 channel discrete amplifiers based on arrays of such illustrative discrete device 19 structures.

It will be appreciated by those skilled in the art that the description herein, 21 including the disclosure provided by the illustrative claims section, is illustrative and 22 explanatory of this invention, but is not intended to be restrictive thereof or limiting of 23 the advantages which can be achieved by this invention. Thus, the drawings 24 constituting illustrate various preferred embodiments of the invention, and, together with the description and illustrative claims, serve to explain the principles of this 26 invention. Further, the illustrative claims are not intended as limiting the scope of the 27 inyention as conceived, contemplated, and intended by the inventors, but are set forth 28 to provide additional understanding and disclosure of the subject matter embraced by 29 the present invention. In this respect, these illustrative claims are shown together with, and refer to, illustrative embodiments that they embrace, and such juxtaposition and 1 referencing of the illustrative claims and drawings is not intended to limit the claims to 2 the embodiment, nor the scope of the invention to the illustrative claims recited herein.
3 It is, therefore, understood by those skilled in the art that the embodiments and 4 alternative implementations and variations described herein are merely illustrative of the present invention, which is not limited thereto. For instance, in accordance with an 6 illustrative non-limiting feature of the various embodiments, these devices may be 7 completely homogeneous semiconductor devices, such as being based entirely on 8 silicon. Those skilled in the art understand, however, that these devices may be 9 implemented with other materials, including compound semiconductors, and need not be homogeneous, but may include heterogeneous components. More specifically, by 11 way of example, although the ensuing illustrative embodiments each_use 12 monocrystalline silicon as the semiconductor material throughout the device, those 13 skilled in the art understand that other monocrystalline, polycrystalline, elemental, 14 and/or compound semi-conducting materials may be used to implement one or more component(s), layer(s), or part(s) of the discrete devices and/or arrays.
Similarly, 16 wbile the ensuing illustrative embodiments employ homo-junctions and hetero-17 junctions, metal-semiconductor junctions may be employed to achieve the desired 18 functionality. For instance, the governor may be implemented via a wider band gap 19 material, while the signal transport region has a lower band g4p material than the other layers. Furthermore, various other insulating and conductive (e.g., metal) materials 21 may be employed other than those explicitly described herein, as understood by those 22 skilled in the art.

23 Accordingly, although the herein disclosure of illustrative embodiments of the 24 present invention, as well as various illustrative modifications and features thereof, provides many specificities, these enabling details should not be construed as limiting 26 the scope of the invention, and it will be readily understood by those persons skilled in 27 the art that the present invention is susceptible to many modifications, adaptations, 28 variations, and equivalent implementations without departing from this scope and 29 without d'uninishing its attendant advantages. It is further noted that the terms and expressions have been used as terms of description and not terms of limitation. There 31 is no intention to use the terms or expressions to exclude any equivalents of features 1 shown and described or portions thereof. It is therefore intended that the present 2 invention is not limited to the disclosed embodiments but should be defined in 3 accordance with the claims that will be presented in any non-provisional applications 4 claiming the benefit ofthis provisional application.

The present invention provides several advantages over the related arts. The 6 invention facilitates self-contained highly sensitive instru.ments for recording and 7 counting individual electrons and photons. The invention is applicable to single and 8 multi-channel devices. The invention uniquely enables the construction of detectors 9 having a high amplification factor, low noise, and rapid response speed.
4. Brief Description of Drawings 11 Additional aspects, features, and advantages of the invention will be 12 understood and will become more readily apparent when the invention is considered in 13 the light of the following description made in conjunction with the accompanying 14 drawings, wherein:
FIG. IA 1C are schematic cross-section views for several illustrative 16 embodiments of the present invention comprising an avalanche amplifying structure 17 with a reverse-bias direction of avalanche showing the positional relationship of 18 electrodes, avalanche region, quantifier, integrator, governor, substrate, and optional 19 signal transport layer;
FIG. 2A shows a sequence of material layers corresponding to the structure of 21 FIG. 1A;
22 FIGS. 2B-2C depict energy band diagrams corresponding to the material layer 23 structure shown in FIG. 2A during various operational conditions of the amplifier;
24 FIG. 2D depicts fu.nctional components of the avalanche amplifying structure shown in FIG. 1A;
26 FIG. 3 shows a cross-sectional view of a reverse-bias avalanche amplifying 27 structure with both hole and electron integrators, in accordance with an embodiment 28 of the present invention;
29 FIG. 4 depicts functional components of the avalanche amplifying structure shown in FIG. 3;

. ...... ..._ 1 FIG. 5 shows a cross-sectional view of a reverse-bias avalanche amplifying 2 structure with hole, electron integrators, and buried channel for holes, in accordance 3 with an embodiment of the present invention;
4 FIGS. 6A-6B shows a cross-sectional view of two reverse-bias avalanche amplifying structures, in accordance with embodiments of the present invention;
6 FIG. 7A-7C are schematic cross-section views for several illustrative 7 embodiments of the present invention comprising an avalanche amplifying structure 8 with normal direction of avalanche showing the positional relationship of electrodes, 9 avalanche region, quantifier, integrator, governor, substrate, an,d optional signal transport layer;
11 FIG. 8A shows a sequence of material layers corresponding to the structure of 12 FIG.7A;
13 FIGS. 8B-8C depict energy band diagrams corresponding to the material layer 14 structure shown in FIG. 8A during various operational conditions of the amplifier;
FIG. 9 shows a cross-sectional view of a normal-direction avalanche 16 amplifying structure with ring guard region, in accordance with an embodiment of the 17 present invention;
18 FIG. 10 shows a cross-sectional view of a noarmal-direction avalanche 19 amplifying structure with high field implant, in accordance with an embodiment of the present invention;
21 FIG. 11 shows a cross-sectional view of a normal-direction avalanche 22 amplifying structure with backside illumination, in accordance with an embodiment of 23 the present invention;

24 FIG. 12 shows a cross-sectional view of a normal-direction avalanche amplifying structure with high field implant and hole integrator, in accordance with an 26 embodiment of the present invention;
27 FIG. 13 depicts functional components of the normal-direction avalanche 28 amplifying structure shown in FIG. 12;
29 FIG. 14 shows a cross-sectional view of a normal-direction avalanche amplifying structure with ring guard and hole integrator, in accordance with an 31 embodiment of the present invention;

1 FIG. 15A-150 are schematic cross-section views for various illustrative 2 embodiments of the present invention comprising an avalanche amplifying structure 3 operating in the Geiger mode with a lateral direction of avalanche showing the 4 positional relationship of electrodes, avalanche region, quantifier, integrator, governor, and substrate and optional dielectric layer, signal transport layer, bloclcing layer, 6 contact region, and third electrode;
7 FIG. 16 shows a cross-sectional view of a lateral-direction avalanche 8 amplifying structure, in accordance with an embodiment of the present invention;
9 FIG. 17 depicts functional components of the lateral-direction avalanche amplifying structure shown in FIG. 16;
11 FIG. 18 shows a cross-sectional view of a lateral-direction avalanche 12 amplifying structure including InGaAsP, in accordance with an embodiment of the 13 present invention;
14 FIG. 19 shows a cross-sectional view of a lateral-direction avalanche amplifying structure with a pair of electrodes aligned along one side the device, in 16 accordance with an embodiment of the present invention;
17 FIG. 20 shows a cross-sectional view of a lateral-direction avalanche 18 amplifying structure with three electrodes, in accordance with an embodiment of the 19 present invention;
FIG. 21 shows a cross-sectional view of a lateral-direction avalanche 21 amplifying structure with a single large electrode aligned along one side of the device, 22 in accordance with an embodiment of the present invention;
23 FIG. 22 shows a cross-sectional view of a lateral-direction avalanche 24 amplifying structure with a bloclcing layer, in accordance with an embodiment of the present invention;
26 FIG. 23 shows a cross-sectional view of a lateral-direction avalanche 27 amplifying structure with a buried channel and a single large electrode along the upper 28 side of the device, in accordance with an embodiment of the present invention;
29 FIG. 24 shows a cross-sectional view of a lateral-direction avalanche amplifying structure with a buried channel and three electrodes, in accordance with an 31 embodiment of the present invention;

1 FIG. 25 shows a cross-sectional view of a lateral-direction avalanche 2 amplifying structure with a hole integrator and a single large electrode along the upper 3 side of the device, in accordance with an embodiment of the present invention;
4 FIG. 26 shows a cross-sectional view of a lateral-direction avalanche amplifying structure with a buried channel, hole integrator, and three electrodes, in 6 accordance with an embodiment of the present invention;
7 FIG. 27 shows a cross-sectional view of a lateral-direction avalanche 8 amplifying structure with a hole integrator and a pair of electrodes oppositely disposed 9 about the device, in accordance with an embodiment of the present invention;
FIG. 28A 28$ are schematic cross-sectiori views for two illustrative 11 embodiments of the present invention comprising an avalanche amplifying structure 12 with a normal direction of avalanche, M[S-based with drain, and three electrodes 13 showing the positional relationship of electrodes, avalanche region, quantifier, 14 integrator, governor, substrate, and dielectric layer;

FIG. 29 shows a cross-sectional view of a lateral-direction avalanche 16 amplifying structure with a normal direction of avalanche, MIS-based with drain, and 17 three electrodes,, in accordance with an embodiment of the present invention;
18 FIG. 30A shows a sequence of material layers corresponding to the structure 19 of FIG. 29;

FIGS. 30B-30C depict energy band diagrams corresponding to the material 21 layer structure shown in FIG. 30A during various operational conditions of the 22 amplifier;
23 FIG. 30D depicts functional components of the avalanche ampiifying structure 24 shown in FIG. 29;
FIG. 31 shows a cross-sectional view of a lateral-direction avalanche 26 amplifying structure with a normal direction of avalanche, MIS-based with drain, and 27 three electrodes, in accordance with an embodiment of the present invention;
28 FIG. 32A shows a sequence of material layers corresponding to the structure 29 ofFIG.31;

1 FIGS. 32B-32C depict energy band diagrams corresponding to the materia.l 2 layer structure shown in FIG. 32A during various operational conditions of the 3 amplifier;
4 FIG. 32D depicts functional components of the avalanche amplifying structure shown in FIG. 31;
6 FIG. 33 is a schematic cross-sectional view for one exemplary embodiment of 7 the present invention comprising an avalanche amplifying structure with a lateral 8 direction of avalanche and hole integrator showing the positional relationship of .9 electrodes, avalanche region, quantifier, integrator, governor, substrate, dielectric layer, and signal transport layer;
11 FIG. 34 is a schematic cross-sectional view of an exemplary multi-channel 12 device composed of the lateral-direction avalanche amplifying structure shown in FIG.
13 33;
14 FIG. 35 shows a cross-sectional view of the multi-channel device shown in FIG. 34 composed of the lateral-direction avalanche amplifying structure shown in 16 FIG. 33, in accordance with an embodiment of the present invention;
17 FIG. 36 is a top plan view of a multi-channel device shown in FIG. 37, in 18 accordance with an embodiment of the present invention;
19 FIG. 37 is a top plan view of a multi-channel device with a single electrode, in accordance with an embodiment of the present invention; and 21 FIGS. 38A-38B are cross-sectional views of several exemplary multi-channel 22 devices, in accordance with several embodiments of the present invention.

23 5. Modes for Carrying out the Invention 24 This application is based upon and claims priority under 35 U.S.C. 119(e) from U.S. Provisional Applications No. 60/689,417 .filed June 10, 2005 and No.
26 60/691,931 filed June 17, 2005, entitled "High Sensitivity, IIigh Resolution Detector 27 Devices and Arrays", the contents of which are hereby incorporated in their entirety by 28 reference thereto.
29 Where possible, reference numerals as used herein below correspond to reference numerals as used in U.S. Patent No. 6,885,827 B2, and in U.S. Patent 31 Application No. 11/080,019, filed March 14, 2005, both entitled "High Sensitivity, I FTigh Resolution Detection of Signals," each of which have the same inventive entity 2 and are subject to common ownership as the instant application, and each of which is 3 herein incorporated in its entirety by reference thereto.
4 The description below includes single channel devices identified as (1) normal quantifier, reverse bias designs, (2) normal quantifier, normal bias designs, (3) lateral 6 quantifier, normal bias designs, and (4) changeable quantifier, normal bias designs. The 7 designs describe and claimed herein may be arranged into a variety of array 8 configurations providing an infinite number of array designs. Various embodiments are 9 shown with a light 26 impinging at least one electrode. Low doping is generally understood to mean less than 1015 cmC and heavily doped or high doping means more 11 than 1017 crri 3. Devices described herein are manufactured via methods understood in 12 the art.
13 By way of background, functionality of the governor is provided by its higher 14 impedance in comparison to the avalanche layer. The high impedance is achieved by various approaches, described in USPN 6,885,827, including low doping level, a 16 material with low mobility for carriers, or with artificially reduced mobility by special 17 treatments. The potential barriers between the governor layer and adjoining layers are 18 also used to achieve the desired impedance. The barrier height is regulated by the 19 doping within the governor and adjoining layers. If the adjoining layer is metal, the barrier may be regulated by its work function.
21 The governor functions to govern or regulate the potential of the quantifier 22 wbich then transfers this potential to electric field, thus switching the threshold 23 amplifier to ON or OFF state and to drain accumulated charge from integrator so as to 24 return the integrator to its initial state.
The high imaging part of impedance (due to the element inductance, shifting 26 current phase relative to the voltage phase) provides the desired functionality of the 27 governor meaning the governor has very low conductivity for a short time while the 28 signal carrier is multiplied, thus all of the generated charge is accumulated effectively 29 nearly without drain. On the other hand, after a short time (delay) the conductance becomes high (equal to the real part of impedance) allowing the accumulated charge to 31 drain and quick return to the initial state.

1 The high imaging part of impedance is provided by material properties (low 2 mobility of carriers) or the presence of potential barriers between the governor and 3 adjoining layers. Material properties lead to a current delay relative to the applied 4 voltage. Low mobility may be achieved by ion implantation (and other special treatments) or may be a property of the material itself The barrier prevents the 6 accumulated charge (i.e., electrons) from the integrator to flow to the governor 7 immediately and the second barrier at the other side of the governor for the other type 8 of carriers (i.e., holes).

9 Single Channel Devices - Normal 4uantifier, Reverse Bias Referring now to FIG. 1A, a single channel element is shown for one 11 embodiment of the avalanche amplifying structure 1 operating in the Geiger mode with 12 a reverse-bias supplied voltage. The avalanche amplifying structure 1 is a generally 13 planar structure including a first electrode 2, an avalanche region 3, a quantifier 4, an 14 integrator 5, a governor 6, a substrate 7, and a second electrode 8 arranged and contacting in the order described. The avalanche region 3 includes a plurality of 16 senuconductor layers with a conductance opposite that of a heavily doped substrate 7.
17 The governor 6 is a weakly doped semiconductor material whereby the quantifier 4 is 18 provided at the interface between the integrator 5 and avalanche region 3.
Likewise, 19 the integrator 5 is provided between the governor 6 and avalanche region 3.

Referring now to FIG. 1B, an alternate embodiment of the reverse-bias 21 avalanche amplifying structure 1 operating in the Geiger mode is shown including a 22 first electrode 2, a governor 6, an integrator 5, an avalanche region 3, a quantifier 4, a 23 substrate 7, and a second electrode 8 in the order described. The avalanche region 3 24 includes a plurality of semiconductor layers with a conductance opposite that of a heavily doped substrate 7. The quantifier 4 is provided at the interface between the 26 substrate 7 and avalanche region 3. The integrator 5 is provided at the interface 27 between the governor 6 and avalanche region 3.

28 Referring now to FIG. 1C, an other alternate embodiment of.a reverse-bias 29 avalanche amplifying structure 1 operating in the Geiger mode is shown wherein a signal transport layer 27 is provided between the first electrode 2 and the avalanche 1 region 3 shown in FIG. 1A. The quantifier 4 is provided at the interface between the 2 integrator 5 and avalanche region 3.
3 A variety of materials are applicable to the avalanche region 3, quantifier 4, 4 integrator 5, governor 6, substrate 7 and signal transport layer 27 in FIGS.
lA 1C. For example, each layer may be composed 'of the same or different semiconductor 6 materials, examples including Si, SiC, GaN, GaAs, and GaP, which are doped to 7 provide the desired electrical properties. In other embodiments, the governor 6 may be 8 composed of a material having a band gap wider than that of the other layers. In yet 9 other embodiments, the signal transport layer 27 may be composed of a material having a band gap narrower than the other layers. In still other embodiments, the first 11 electrode 2 and/or second electrode 8 may be composed of a conductive metal or light 12 transmissive and conductive material, examples including without limitation 13 transparent ITO and Al-doped ZnO. Furthermore, the avalanche region 3, quantifier 4, 14 integrator 5, governor 6, and substrate 7 and signal transport layer 27 may include two or more layers arranged to form a larninated structure with or without inclusions or 16 regions with yet other non-doped and doped semiconductor materials. Layers and 17 devices may include planar and non-planar shapes. Likewise, the sectional views may 18 represent structures of planar and/or diametric extent. The SiO2 layer may be 19 composed of other comparable materials.

Referring now to FIG. 2A, a sequence of material layers are shown to 21 correspond with one exemplary embodiment of the avalanche amplifying structure 1 22 shown in FIG. 1A. The device includes a transparent electrode 105, a p-Si layer 100, 23 n+-Si layer 102, a i-Si layer 110, an ri-Si layer 109 and an electrode 106.
The 24 electrode 106, preferably a metal, is electricaily connected to a power supply having a positive voltage UP and the transparent electrode 105 is electrically connected to 26 ground.

27 Referring now to FIGS. 2B-2C, band diagrams are provided to illustrate the 28 function of the device in FIG. 2A. FIG. 2B shows the initial state of the device, before 29 the appearance of a signal carrier, such that a positive voltage U,,.P is a.pplied to the electrode 106, the ri-Si layer 109 has the potential of the electrode 106, and the 31 heavily-doped ri-Si layer 102 is discharged and operating as a floated electrode to .... ....... ...... .......
1 acquire nearly the same potential as the n-Si layer 109. In this example, nearly all of 2 the voltage is applied to the p-Si layer 100. The voltage should be sufficient so that the 3 voltage drop in the p-Si layer 100 (UAmp) exceeds the avalanche breakdown value in 4 the ON state. In this example, the p-Si layer 100 is an avalanche threshold or Geiger mode amplifier. It is seen from FIG. 2B that the voltage applied to amplifier (U,,,,p) is 6 equal to Usõp-Ur, where Ur results from a small voltage drop in the i-Si layer 110. If Ur 7 is initially too high, it will decrease over time because of the field-enhanced 8 thermoemission or discharging current associated with electrons from the n+-Si layer 9 102 to the n}-Si layer 109 over the potential barrier shown in FIG. 2B. The i-Si layer 110 may be composed of an i-type, weakly doped p-type, or weakly doped n-type 11 semiconductor material. Doping within the i-Si layer 110 regulates the potential barrier 12 height between the governor and adjoining layers. The n+-Si layer 102, which 13 corresponds to the integrator 5 in FIG. 1A, discharges in the absence of charging 14 current from the p-Si layer 100, until its potential is nearly equal to the potential of the electrode 106.

16 Referring now to FIG. 2C, when a free carrier (electron) appears in the high 17 field area of the p-Si layer 100, it initiates the over breakdown avalanche multiplication 18 producing new electron 62 and hole 64 pairs by a zone-zone impact ionization 19 process. Avalanche electron current quickly increases in time and becomes larger than the flow-out current from the n-Si layer 102 and electrons 62 generated within the p-21 Si layer 100 quickly charge the integrator 5 or ri -Si layer 102. The described behavior 22 decreases the voltage drop within the amplifier or the p-Si layer 100 and turns off the 23 avalanche process so that the amplifier is switched to the OFF state.
24 The voltage drop on the amplifier is associated with the voltage rise in the i-Si layer 110 or governor 6, causing redistribution of the supplied voltage between 26 amplifier and governor 6. The governor 6 induces a delay in the discharge of the 27 integrator 5, shifting current phase in time with respect to the avalanche current. This 28 delay is sufficient to terminate the avalanche process within the amplifier.
29 While not intending to be bound by theory, the discharge delay may have one or more physical causes dependent on the device state, as well as the design and 31 properties of the governor 6. For example, initially, when the voltage Ur is low, 1 thermoemission or discharge current is small in comparison to the avalanche or 2 charging current to the integrator 5. When Ur increases, the dominant reason may 3 include the self-linutation of the out-flow current by space-charge effects, the finite 4 time of flight of free-carriers through the governor 6, the lower mobility of carriers within the governor 6 in comparison to those in the amplifier, or other physical 6 mechanisms that limit current discharge or shift its phase in comparison to the 7 avalanche current. The minimal delay time sufficient to turn the amplifier to the OFF
8 state is estimated to be in the range of about 10-400 picoseconds, depending on the 9 device design and desired gain, thus representing the number of elementary charges accumulated within the integrator 5 in response to one signal carrier.
11 After the amplifier is switched to the OFF state, charging current to integrator 12 5 becomes zero and the integrator 5 discharges through governor 6, the amplifier is 13 switched back to the ON state, and the device returns to the initial state shown in FIG.
14 2B.
The result from the avalanche multiplication charge accumulated within the 16 integrator 5 may be read out through the mutual capacitance of the heavily-doped ri -17 Si layer 102 and ri -Si layer 109 divided by the i-Si layer 110 (capacitive reader) or by 18 detecting the integrator 5 discharge current through governor 6 or current reader.
19 Both read out approaches lead to the appearance of charge in the electrode corresponding to charge accumulated within the integrator 5.
21 Referring now to FIG. 2D, the functional scheine of the discrete amplifier is 22 shown with reference to the corresponding physical representation of the device in 23 FIG. 2A. The functional scheme is shown including a transporter 9, a threshold 24 amplifier 10, a quantifier 11, an integrator 12, a governor 13, and a reader 14.
The transporter 9 corresponds to a portion of the p-Si layer 100, where the 26 electric field is not-zero. Free electrons collide within the transporter 9 and are 27 delivered to the input of the threshold amplifier 10.
28 The threshold amplifier 10 corresponds to a portion of the p-Si layer 100, 29 where the electric field is sufficient for impact ionization in the ON
state. Voltage drop within the p- Si layer 100 exceeds the breakdown voltage, thus atlowing the threshold 31 amplifier 10 to operate in the Geiger mode.

1 The quantifier 11 corresponds to the interface between the p-Si layer 100 and 2 the n'-Si layer 102. The potential of the quantifier 11 regulates the avalanche process 3 (electric field strength) in the threshold amplifier 10. For a planar quantifier 11, the 4 transfer constant is equal to one. For non-planar designs, transfer constants greater than one are possible based upon the curvature of the design which causes field 6 concentrations so that the maximal field becomes higher for the sazne electric potential.
7 The quantifier 11 functions to transfer the integrator 12 potential to the field strength 8 which defines the avalanche intensity. The transfer constant may be defined as the 9 reaction or increase of the field intensity with respect to the increase of the potential.
The integrator 12 is shown within the n+-Si layer 102 as it accumulates current 11 from the threshold amplifier 10 and regulates the potential of the quantifier 11.
12 The governor 13 is shown within the i-Si layer 110, since it regulates the 13 discharge current from the integrator 12 and delays discharge to turn the threshold 14 amplifier 10 to the OFF state, as well as returning the device to its initial state after amplification of a charge carrier.

16 The reader 14, a capacitive variant, has a capacity comprised by the n+-Si layer 17 102, the i- Si layer 110, and the n+-Si layer 109. As such, the charge accumulated 18 within the integrator 12 induces the appearance of the opposite sign charge in the n+-Si 19 layer 109 and on the second electrode 106, electrically coupled thereto.
The band diagrams in FIGS. 2B-2C further show the p-Si layer 100 with an 21 un-depleted region close to the first electrode 105. A typical p-Si layer 100 is 5-6 m 22 wide having a resistivity of 4 Ohm-cm. In alternate embodiments, the width of the p-Si 23 layer 100 may less than the depleted region width so that the electric field reaches the 24 interface between the p-Si layer 100 and the first electrode 105, thus allowing photo-carriers generated by light close to the interface to be gathered effectively.
In some 26 embodiments, it may be desired to prevent electron injection from the electrode 105 27 into the p-Si layer 100 when the electric field reaches the interface. As such, the 28 electrode 105 may have a Shottky barrier for electrons or a p' region placed between 29 the electrode 105 and the p-Si layer 100.
It is readily apparent from the description above that the present invention 31 operates as a Geiger counter, using a new internal scheme of quenching integrated 1 within the device which differs from both active and passive quenching known within 2 the art. Active quenching requires external or integrated active electronics which is not 3 provided by the functionality described above. Passive quenching requires a resistor or 4 a resistive layer which is not provided by the functionality described above.
FIGS. 3, 5, and 6A-6B refer to specific embodiments of the illustrative devices.
6 Referring now to FIG. 3, a reverse-bias avWanche amplifying structure 1 with 7 both hole and electron integrators is shown for one embodiment of the present 8 invention. The device includes a transparent electrode 105, a segmented Si02 layer 9 107 (insulator), p+-Si regions 103 (heavily doped region), a p-Si region 112, a p-Si layer 100, a p"-Si layer 110, a n+-Si layer 102, a n+-Si layer 109, and an electrode 106.
11 The thickness of the p-Si layer 100 should be sufficiently small so that it is fully 12 depleted to increase shortwave sensitivity. Preferred embodiments of the p-Si layer 13 100 include a doping of 2-3 Ohm-cm and a thickness of 2.5-3 m. The spectral range 14 for such a device is from 300-400 nm (shortest wavelength depending on the electrode 105 material) and up to 700-800 nm. For longer wavelength spectral sensitivity up to 16 1060 nm, the width of the p-Si layer 100 is increased and the doping level decreased.
17 One or more p+-Si regions 103 are included to block the injection of electrons 18 from the transparent electrode 105 to the depleted p-Si layer 100. The p+-Si regions 19 103 may be not necessary if the p-Si layer 1 QQ is not fully depleted and the field does not reach the transparent electrode 105; however, generally, this would provide very 21 low spectral sensitivity for short wavelengths that generate photo-carriers close to the 22 top surface of the p-Si layer 100. If this area is not depleted, photocarriers will 23 recombine and be lost. The resultant device is operable, but not optimal.
However, 24 where the field reaches the transparent electrode 105 (a more optimal variant), then p+-Si regions 103 are required to block the injection of electrons. In preferred 26 embodiments, the p-Si layer 100 is 2-4 m thick with a resistivity of 10 Ohm-cm.

27 The p-Si region 112 is preferred to be composed of the sanie material, have the 28 same active impurity doping, and have lower mobility for holes in the lateral direction 29 along the Si-SiO2 interface of the p-Si layer 100. The p-Si region 112 is formed by neutral impurities doping, irradiation, or p with n doping.

WO 2006/135683 PCT/US2006/022316 11 1 Referring now to FIG. 4, the functional scheme for the embodiment in FIG. 3 2 is shown. Unlilce the device in FIG. 2A, the FIG. 3 device includes two integrators 12, 3 16 and two governors 13, 17, thus delaying the discharge of corresponding integrators, 4 12, 16 to function as an electron governor, as described for the i-Si layer 110 in FIG.
2A, and to function as a hole governor corresponding to the p-Si region 112.
6 When the avalanche in the p-Si layer 100 is initiated by a free carrier, holes 64 7 are accumulated. at the interface in the p-Si region 112 or hole integrator, thus 8 increasing the potential of the top surface of the p-Si layer 100 in comparison to that 9 of the transparent electrode 105. This potential increase is localized just above the n'-Si layer 102. The voltage drop in the p-Si layer 100 (Ua.p) decreases until the 11 accumulated positive charge flows to the p+-Si region 103 and then to the transparent 12 electrode 105. It is readily apparent that the hole governor operates in a similar 13 manner as the p=Si layer 110. The resultant delay time depends on mobility of the 14 holes moving along the interface in the p-Si region 112.
Referring again to FIG. 4, the transporter 9, threshold amplifier 10, and 16 quantifier 11 regulate the avalanche process, transferring the electron integrator 12 17 potential to the threshold amplifier 10 at the interface between the n+-Si region 102 18 and p-Si layer 100. The quantifier 17 regulates the avalanche process, transfemng the 19 hole integrator potential to the threshold amplifier 10 at the interface between the Si and Si02 layer 107 above the n+ Si region 102 and the electron integrator 12 is placed 21 in the ri Si region 102. The hole integrator 16 is placed at the interface between the p-22 Si region 112 and SiO2 layer 107 above the n+-Si region 102. The electron governor 23 13 delays the discharge of the electron integrator 12 following the removal of the 24 accumulated electron charge. The hole governor 17 delays the discharge of the hole integrator 17 following the removal of the accumulated hole charge, which 26 corresponds to the p-Si region 112, electron reader 14 and hole reader 18.
27 The functional scheme in FIG. 2D changes to the functional scheme in FIG. 4 28 when the electric field reaches the p-Si region 112 and when the p-Si layer 100 and p-29 Si region 112 are fully depleted.
Referring now to FIG. 5, an alternate embodiment of the device in FIG. 4 is 31 shown wherein the p-Si region 112 is removed and replaced with a buried channel 114 _ ..... ..... .
1 for holes and an i-Si region 113 (second governor) is added to separate the p+-Si 2 region 103 from the transparent electrode 105. The second governor is composed of a 3 high-impedance semiconductor material between the first or transparent electrode 105 4 and the p}-Si regions 103 (heavily doped regions) and residing with the opening or cavity within the Si02 layer 107. A second integrator is fonned at the interface 6 between the avalanche region and said second govemor. The buried channel 114 is a 7 thin layer, preferably 0.3 m, with n-doping and fabricated via methods known within 8 the art. The buried channel 114 improves the mobility of holes along interface of the 9 channel. The doping concentration within the buried channel should be sufficient so that it is fully depleted by field in the p-Si layer 100.
11 The buried channel 114 ensures that all the holes generated by the avalanche in 12 the p-Si layer 100 quickly move along layer and are accumulated within p'-Si region 13 103 or hole integrator. The result is a charging of the p+-Si region 103 which 14 increasing its potential with respect to the transparent electrode 105. The p+-Si region 103 and i-Si region 113 operate in the same manner. The result is a voltage drop 16 within the i-Si region 113 and a delay in discharging and switching of the threshold 17 amplifier to the OFF state. The hole quantifier in this device is the interface between 18 the buried channe1114 and the p-Si layer 100.
19 Charging of the p+-Si region 103 causes a charge to the holes accumulating in buried channel 114 and a uniform increase of the potential within the buried channel 21 114, so that the buried channel 114 is included in the capacitance of the hole 22 integrator.
23 Alternate embodiments to the device in FIG. 5 are shown in FIGS. 6A-6B. For 24 example in FIG. 6A, the i-Si region 113 is eliminated from FIG. 5. Whereas in FIG.
6B, the p=Si layer 110 is eliminated. Likewise, it is possible for the devices in FIGS.
26 6A-6B to be made without the buried channel 114.
27 Single Channel Devices - Normal Ouantifier, Normal Bias 28 A variety of materials are applicable to the layers and regions in FIGS. 7A-7C.
29 For example, each layer may be composed of the same or different semiconductor materials, examples including Si, SiC, GaN, GaAs and GaP, which are doped to 31 provide the desired electrical properties. In other embodiments, the governor 6 may be 1 composed of a material having a band gap wider than that of the other layers. In yet 2 other embodiments, the signal transport layer 27 may be composed of a material 3 having a band gap narrower than the other layers. In still other embodiments, the first 4 electrode 2 and/or second electrode 8 may be composed of a conductive metal or light transmissive and conductive material, examples including without limitation 6 transparent ITO and Al-doped ZnO. Furthermore, layers and regions may include two 7 or more layers arranged to form a laminated structure with or without inclusions or 8 regions with yet other non-doped and doped semiconductor materials. Layers and 9 devices may include planar and non-planar shapes. Lilcewise, the sectional views may represent structures of planar and/or diametric extent. The Si02layer may be 11 composed of other comparable materials.
12 Referring now to FIG. 7A, a single channel element is shown for one 13 embodiment of the avalanche amplifying structure 1 operating in the Geiger mode with 14 a normal direction of avalanche. The avalanche amplifying structure 1 is a generally planar structure including a first electrode 2, a governor 6 for draining the charge from 16 the integrator 5 and controlling the quantifier 4, an integrator 5 which accumulates a 17 signal charge, a quantifier 4 for turning the avalanche process ON and OFF, an 18 avalanche region 3, a substrate 7, and a second electrode 8 arranged in the order 19 described. The quantifier 4 is formed at the interface between the integrator 5 and avalanche region 3. The integrator 5 may have limited conductance in directions 21 parallel to the plane of the substrate 7. In some embodiments, all layers may be 22 composed of the same material. In other embodiments, it is preferred for the governor 23 layer to be made of a semiconductor material which has a band gap which is wider 24 than that of the remaining semiconductor layers.
Referring now to FIG. 7B, another alternate embodiment of the single channel 26 element is shown for the avalanche amplifying structure 1 operating in the Geiger 27 mode with a normal direction of avalanche including a signal transport layer 27 28 disposed between and contacting the avalanche region 3 and substrate 7 in FIG. 7A.
29 The signal transport layer 27 generates free charge carriers under the signal action and effects their transportation into the avalanche region 3.

1 Referring now to FIG. 7C, an alternate embodiment of the single channel 2 element is shown for the avalanche amplifying structure 1 operating in the Geiger 3 mode with a normal direction of avalanche including a first electrode 2, a governor 6, 4 an avalanche region 3, a substrate 7, and a second electrode 8 arranged in the order described. The avalanche region 3 and governor 6 drain the charge from the integrator 6 5 and control the quantifier 4. The function of the integrator 5, which accumulates the 7 signal charge, and the function of the quantifier 4, which turns the avalanche process 8 ON and OFF, is performed at the interface between the avalanche region 3 and the 9 governor 6. The interface between the avalanche region 3 and the governor 6 may have limited conductance in directions parallel to the plane of the substrate 7.
11 It is lilcewise possible for the amplifying avalanche structure 1 operating in the 12 Geiger mode with a normal direction of avalanche to include an avalanche region 3, an 13 integrator 5 for the accumulation of a signal charge, a quantifier 4 for turning the 14 avalanche process ON and OFF, and a governor 6 for draining the charge from the integrator 5 and controlling the quantifier 4 collectively composing a planar laminated 16 semiconductor structure disposed on a heavily doped substrate 7 between a pair of 17 electrodes 2, 8. The avalanche region 3 may be composed of a material of the same 18 conductivity but higher resistivity, an integrator 5 composed of a heavily doped 19 semiconductor material having a conductivity opposite that of the substrate 7, a governor 6 composed of a high-impedance semiconductor material, and quantifier 21 provided at the interface between the avalanche region 3 and integrator 5.

22 Referring now to FIG. 8A, a sequence of material layers are shown including 23 an electrode 106, a p-Si layer 100, a n+-Si region 102, an i-Si layer 110 and a 24 transparent electrode 105. FIGS. 8B-8C show band diagrams describing the function aspects corresponding to the device layers in FIG. 8A
26 Referring now to FIGS. 8B-8C, the device includes a silicon substrate with 27 orientation [100] and resistivity of 10-100 Ohm-cm, thus having a wide depleted 28 region. The ri-Si region 102 is heavily doped and has a width less than 0.51im. The i-29 Si layer 110 has a width which is less than several m's. The device is intended for red-infrared wavelengths, when it is possible to neglect light absorption in the n-Si 31 region 102 and the i-Si layer 110. Alternate embodiments of the present invention may 1 include an i-Si layer 110 composed of a semiconductor having band gap wider than 2 silicon, one example being non-doped ZnO, to decrease the light absorption within the 3 layer and to increase short wavelength sensitivity (green-blue). Such embodiments 4 have an epitaxial p-Si layer 100 with a resistivity of 1-10 Ohm-cm.
Operation is nearly identical to a similar reverse bias design, as illustrated by 6 the band diagrams for the ON and OFF states in FIGS. 8B-8C. The main difference 7 being that electron and hole current may take part when discharging the n+-Si layer 8 102 (integrator) through the i-Si layer 110 (governor).
9 FIGS. 9-12 and 14 refer to specific embodiments of the illustrative devices.
Referring now to FIG. 9, a cross-sectional view of a normal-direction 11 avalanche amplifying structure 1 with ring guard region is shown and described 12 including a transparent electrode 105, a SiO2layer 107, a i-Si layer 110, a ri-Si guard 13 ring 108, a n+-Si layer 102, an epitaxial p-Si layer 100, a p+-Si layer 90 (substrate), and 14 an electrode 106. The i-Si layer 110 (governor) is dimensionally smaller than the device, preferably several m's in diameter, to minimi7e light absorption. In some 16 embodiments, the i-Si layer 110 may be composed of a semiconductor having a band 17 gap wider than silicon, one example being non-doped ZnO. A signal light 26 enters the 18 epitaxial p-Si layerlOO (avalanche region) through the n-Si layer 102 (integrator). As 19 such, the n+-Si layer 102 is thin, typically less than 0.4 m, to minimi~e light absorption within the layer. The ri -Si guard ring 108 suppresses edge effects and 21 ensures the avalanche process is uniform over the area underlying the n+-Si layer 102 22 (integrator). In blue-green embodiments, the epitaxial p-Si layer 100 has a resistivity of 23 1-2 Ohm-cm and a width of a few m's to minimize thermogeneration current within 24 the depleted region. In red-infrared embodiments, the epitaxial p-Si layer 100 has a higher width of tens of m's and higher resistivity. The precise values of the width and 26 resistivity for the epitaxial p-Si layer 100 are calculated via methods understood in the 27 art to achieve the desired spectral sensitivity and other parameters of the device.
28 Operation of the described device and its functional elements (integrator, quantifier, 29 governor, substrate, and avalanche region) are as described above.
Referring now to FIG. 10, a normal-direction avalanche amplifying structure 1 31 with high-field implant is shown and described including a transparent electrode 105, a 1 Si02 layer 107, an i-Si layer 110, a n+-Si region 102, a p-implantation layer 101, an 2 epitaxial p-Si layer 100, a p+-Si layer 90 (substrate), and an electrode 106. In this 3 embodiment, the high field implant is used to suppress edge effects in place of the 4 diffused guard ring in FIG. 9. This approach nLnimi7es the unused area of the device where avalanche is not present. The p-implantation layer 101 is a thin region beyond 6 the ri-Si region 102. Avalanche multiplication is localized within the p-implantation 7 layer 101. The i-Si layer 110 is a few m's in diameter to minimize light absorption 8 within the layer. In some embodiments, the i-Si layer 110 may be composed of a 9 semiconductor having a band gap wider than silicon, one example being non-doped ZnO. Infrared embodiments of the device may operate with backside illumination 11 (rich-through) where the field tail penetrates the low-doped epitaxial p-Si layer 100 so 12 as to effectively gather photocarriers with high time resolution, while having a low 13 operating voltage. The i-Si layer 110 (governor) has a small diameter, as described 14 above for FIG. 9.
Referring now to FIG. 11, a normal-direction avalanche amplifying structure 16 with backside illumination (rich-through) is shown and described including an 17 electrode 106, a SiO2 layer 107, an i-Si layer 110, a n+-Si layer 102, a ri-Si guard ring 18 108, an epitaxial p-Si layer 100, a p--Si layer 104, a p+-Si layer 103, and a transparent 19 electrode 105. Operation of the device is as described above in FIG. 9, except that the transporter-photoconverter is provided within the p--Si layer 104. Again, the i-Si layer 21 110 is a few m's in diameter to minimize light absorption within the layer. In some 22 embodiments, the i-Si layer 110 may be composed of a semiconductor having a band 23 gap wider than silicon, one example being non-doped ZnO. The p--Si layer 24 (substrate) has a high resistivity (low doped) and is fully depleted at the operating voltage. The described device is capable of detecting infrared light with a wavelength 26 up to 1.06 m.
27 The avalanche event occurs within the p-Si layer 100 which has a higher 28 doping in comparison to the transport-photoconversion region comprised by the p--Si 29 layer 104. The width and doping of the p-Si layer 100 is selected so that the electric field does not fall to zero, but has a long tail which penetrates into the p-Si layer 104 31 stopped by the highly doped p+-Si layer 103. The width of the p"-Si layer 104 should 1 be sufficient to provide structural strength to the device, preferably up to a few 2 hundred m's. Field strength in the p--Si layer 104 should be insufficient, for avalanche, 3 but high enough so that a free carrier may move within it at a saturated speed (104 4 V/cm), as calculated via methods understood in the art.
The p''-Si layer 103 should be as thin as possible to minimize light absorption 6 within the layer. However, the p*-Si layer 103 should not be fully depleted and its 7 width should be sufficient to bloclc electron injections from the transparent electrode 8 105 to the p--Si layer 104. Various antireflection coating understood in the art may be 9 added to the device via methods also understood in the art.
Refenin.g now to FIG. 12, a normal-direction avalanche amplifying structure 1 11 with high field implant and hole integrator is shown and described including a 12 transparent electrode 105, a Si02 layer 107, a n' Si layer 102, a p-Si layer 101, an 13 epitaxial p--Si layer 100, a p+-Si region 130, an epitaxial i-Si layer 113, a p+-Si layer 90 14 (substrate), and an electrode 106. The device differs from FIG. 10 in that a hole integrator is provided by the p+=Si layer 130 and the epitaxial i-Si layer 113 is added as 16 the hole governor, instead of the electron integrator. Furthermore, the i-Si layer i 10 in 17 FIG. 10 is removed and the ri-Si layer 102 is coupled directly to the transparent 18 electrode so as to avoid the accumulation of electrons.
19 Referring now to FIG. 13, the fitnctional components of the normal-direction avalanche amplifying structure 1 from FIG. 12 are shown and described. The 21 transporter 9 corresponds to the depleted part of the epitaxial p=Si layer 100, 22 threshold amplifier 10 corresponds to the p-Si layer 101, electron quantifier 11 23 corresponds to the interface between the ri-Si layer 102 and the p-Si layer 101, 24 electron reader 14 corresponds to the transparent electrode 105, hole quantifier 15 corresponds to the interface between the p--Si layer 100 and the p+-Si layer 130, hole 26 integrator 16 corresponds to the p+-Si layer 130, hole governor 17 corresponds to the 27 epitaxial i-Si layer 113, hole reader 18 corresponds to the electrode 106 through 28 capacitance comprised by the p+-Si region 130, the epitaxial i-Si layer 113, and the p+-29 Si layer 90 (IF part of the signal), and current though the epitaxial i-Si layer 113 to the electrode 106 (LF part of the signal). Operation of the hole integrator and hole 31 governor does not differ from that described above, when the opposite polarity and 1 carrier type are taken into account. The device switches the avalanche amplifier OFF
2 following the removal of the accumulated charge in the integrator.
3 The width and doping level of the epitaxial p"-Si layer 100 are designed so that 4 the layer is fully depleted. The epitaxial i-Si layer 113 may be composed of a p-type or n-type material that regulates the barrier height for holes. The size, form of the p'-Si 6 layer 130, and distance of the p4-Si layer 130 from the n*-Si layer 102 are regulating 7 parameters which influence timing, jitter, maximal overvoltage, gain at fixed over-8 voltage, and other performance characteristics.
9 The advantages of this embodiment are that there are no additional layers ahead of the avalanche region, unlike the conventional design of any avalanche Geiger 11 photodetector or non-Geiger APD, and no additional light absorption.
Furthermore, 12 the quenching system is placed behind the working region allowing its use with Geiger 13 photodetectors. The result is the ability to operate with DC voltage and a quenching 14 system which is much more efficient than conventional passive and active quenching methods.

16 Referring now to FIG. 14, a normal-direction avalanche amplifying structure 17 with ring guard and hole integrator is shown and described including a transparent 18 electrode 105, a Si021ayer 107, a n+-Si layer 102, a ri-Si guard ring 108, an epitaxial 19 p=Si layer 100, a p+-Si region 130, an epitaxial i-Si layer 113, a p+-Si layer 90 (substrate), and an electrode 106. The device differs from FIG. 12 in that the high field 21 implant design is substituted with a guard ring design.

22 Single Channel Devices - Lateral Quantifier, Normal Bias 23 A variety of materials are applicable to layers and regions in FIGS. 15A-150.
24 For example, each layer may be composed of the same or different semiconductor materials, examples including Si, SiC, GaN, GaAs and GaP, which are doped to 26 provide the desired electrical properties. In other embodiments, the governor 6 may be 27 composed of a material having a band gap wider than that of the other layers. In yet 28 other embodiments, the signal transport layer 27 may be composed of a material 29 having a band gap narrower than the other layers. In still other embodiments, the first electrode 2 and/or second electrode 8 may be composed of a conductive metal or light 31 transmissive and conductive material, examples including without limitation 1 transparent ITO and Al-doped ZnO. Furthermore, layers and regions may include two 2 or more layers arranged to form a laminated structure with or without inclusions or 3 regions of yet other non-doped and doped semiconductor materials. Layers and 4 devices may include planar and non-planar shapes. Likewise, the sectional views may represent structures of planar and/or diametric extent. The Si02 layer may be 6 composed of other comparable materials.
7 Referring now to FIG. 15A, an avalanche amplifying structure 1 operating in 8 the Geiger mode with a lateral direction of avalanche is shown and described including 9 a first electrode 2, a governor 6, an integrator 5 and an avalanche region 3, a substrate 7, and a second electrode 8 in a layered arranged in the order described. It is preferred 11 for the avalanche region 3, substrate 7, and second electrode 8 to be of comparable 12 lateral extent. Likewise, it is preferred for the first electrode 2 and governor 6 to be 13 slightly smaller in extent as compared to the integrator 5. The avalanche region 3 14 includes a hole through its thickness within which resides the integrator 5. The hole and integrator 5 should be sufficiently larger than the governor 6 to avoid contact 16 direct contact between the governor 6 and the avalanche region 3. The periphery of 17 the integrator 5 should directly contact the avalanche region 3 so that the interface 18 between the two materials functions as a ring-shaped quantifier 4. The integrator 5 is 19 responsible for accumulating a signal charge. The quantifier 4 controls the ON and OFF states of the avalanche process. The governor 6 drains the charge from the 21 integrator 5 and control the quantifier 4.

22 FIGS. 15B-150 represent variations of the device in FIG. 15A.
23 In FIG. 15B, a dielectric layer 19 composed of one or more materials 24 understood in the art surrounds the periphery of the governor 6. The dielectric layer 19 is preferred to both cover and contact the integrator 5 and avalanche region 3 26 without providing an electrical conduit between the govemor 6 and avalanche region 27 3.
28 In FIG. 15C, the second electrode 8 is removed from the substrate 7 and 29 replaced with a ring-shaped structure. The second electrode now contacts the avalanche region 3 and is disposed about the governor 6 and electrode 2 which extend 31 above the surface including the integrator 5 and avalanche region 3.

1 In FIG. 15D, the first electrode 2 in FIG. 15B is extended to now completely 2 cover the both governor 6 and dielectric layer 19.
3 In FIG. 15E, the governor 6 extends above the dielectric layer 19 and has a T-4 shaped structure so as to cover the uppermost surface of the dielectric layer 19. The first electrode 2 contacts the T-shaped governor 6 about the integrator 5.
6 In FIG. 15F, the first electrode 2 in FIG. 15E is now extended to contact and 7 cover the T-shaped governor 6 so as to have lateral extents as large as the second 8 electrode 8.
9 In FIG. 15G, the substrate 7 and second electrode 8 are extended laterally beyond the edge of the avalanche region 3. A signal transport layer 27 is disposed 11 about and contacts the periphery of the avalanche region 3. It is preferred for the 12 signal transport layer 27 to be as thick as the avalanche region 3. The signal transport 13 layer 27 is composed of a semiconductor material also comprising the avalanche 14 region 3; however, a less doped composition.

In FIG. 15H, an electrically conductive contact region 25 is disposed between 16 the governor 6 and integrator 5. The contact region 25 is of lesser lateral extent as 17 compared to the integrator 5 so as to avoid direct electrical contact with the governor 18 6. A blocking layer 24 is disposed about and contacts the periphery of the contact 19 region 25. Likewise, the blocking layer 24 covers the integrator 5 and avalanche region 3. The blocking layer 24 is composed of a semiconductor material of the same 21 type as the avalanche region 3. The blocking region 24 does not contact the first 22 electrode 2.

23 In FIG. 151, a dielectric layer 19 is disposed about and contacts the periphery 24 of the governor 6 in FIG. 15H. The dielectric layer 19 also completely contacts and covers the blocking layer 24 opposite of the avalanche region 3. The first electrode 2 26 contacts the governor 6 only.

27 In FIG. 15J, the first electrode 2 in FIC'r. 151 is extended laterally to now 28 contact and cover both governor 6 and blocking layer 24.
29 In FIG. 15K, a third electrode 50 replaces a segment of the first electrode from FIG. 15D with a gap there between. The first electrode 2 contacts the governor 31 6. The third electrode 50 contacts the dielectric layer 19.

1 In FIG. 15L, a third electrode 50 replaces a segmented of the first electrode 2 2 from FIG. 15J with a gap there between. The .first electrode 2 contacts the governor 6.
3 The third electrode 50 contacts the dielectric layer 19.
4 In FIG. 15IVla the integrator 5 includes a hole within which the governor 6 resides so as to contact the integrator 5 about the periphery of the governor 6. The 6 governor 6 now resides on the substrate 7.The first electrode 2 contacts the governor 7 6 only.
8 In FIG. 15N, a dielectric layer 19 is disposed about and contacts the periphery 9 of the governor 6.from FIG. 15M which extends beyond the integrator 5. The first electrode 2 is extended laterally to now contact and cover the governor 6 and the 11 dielectric layer 19.
12 In FIG. 150, the first electrode 2 only covers and contacts the governor 6 in 13 FIG.15N.
14 FIGS. 16 and 18-27 refer to specific embodiments of the illustrative devices.
Referring now to FIG. 16, a lateral-direction avalanche amplifying structure 1 16 is shown and described including a transparent electrode 105, a p-Si layer 110, an 17 SiO2 layer 107, a p"-Si layer 100, a ri-Si region 102, a p-Si region 103, a p+-Si layer 18 91 (substrate), and an electrode 106. FIG. 17 shows the functional components of the 19 lateral-direction avalanche amplifying structure 1.
The components identified in FIG. 16, excluding electrodes 105, 106, may be 21 composed of one or more semiconductor material, one example being Si having a 22 doping type and concentration to achieve the desired electrical properties.
The Si02 23 layer 107 may be composed of other comparable materials.
24 The transparent electrode 105 and p=Si layer 110 are preferred to be several m's in diameter to rninimize light absorption therein. The transparent electrode 105 26 and p-Si layer 110 may be composed of a semiconductor having a wider band gap 27 than silicon, one example being non-doped ZnO. The ri-Si region 102 (integrator) is 28 fabricated to have a diameter as small as possible. The electrode 106 may be 29 composed of a metal, examples including Al, Ni, NiCr, Mo or the like, or a transparent conductive material, exatnples including ITO or Al-doped ZnO.

1 ON and OFF switching of this embodiment is nearly the same as the device in 2 FIGS. 8A-8C, except that the threshold amplifier 10 has a lateral orientation and the 3 threshold amplifier 10, quantifier 11, integrator 12, and governor 13 are not arranged 4 in a linear fashion.
The p-Si region 103 is preferred to have a higher doping concentration than the 6 p'-Si layer 100. Avalanche multiplication occurs only at the edges of the junction in the 7 p-Si region 103 and both transporters 9 and threshold amplifiers 10 in FIG.
16B are 8 oriented in the lateral direction, parallel to the p+-Si layer 91.
Accordingly the carriers 9 generated at the top of p--Si layer 100 are effectively gathered by the threshold amplifiers 10. The other elements within the functional scheme operate as previously 11 described.
12 The p-Si region 103 is preferred to have a width, typically 1 m, and doping 13 level, typically 1 Ohm-cm resistivity, so that the lateral field component exits the 14 region (rich-through in lateral direction) and penetrates the p-Si layer 100 along Si-Si02 interface, thus gathering signal carriers and transporting them to the p-Si region 16 103 (threshold amplifier). In some embodiments, the p-Si region 103 may be 17 composed of the same doping as in the p=Si layer 100; however, the n+-Si region 102 18 (integrator) is preferred to be thin, typically less than 0.4 m. The lateral direction of 19 avalanche is provided by the edge breakdown effect. In other embodiments, the p-Si region 103 may be used without rich-though and have a diameter equal to the device 21 diameter so that it fully separates the Si02 layer 107 from the p=Si layerl00.
22 The lateral-direction devices described herein provide high sensitivity for short 23 wavelength applications down to near UV and high gathering efficiency for longer 24 wavelength applications up to 700-800 nm. Thus, the geometrical factor for such devices, representing the amplified photocarriers divided by the total number of 26 generated photo-carriers, is rather close to unity.
27 Referring now to FIG. 18, a lateral-direction avalanche amplifying structure 1 28 is shown and described including a pair of transparent electrodes 105, a Si3N4 layer 93 29 (insulator), an riInP layer 110, a p+ InP region 102, a n InP layer 100, a n InGaAsP
layer 140 (buffer), a n InGaAs layer 150 (absorber), a n InP layer 160 (epitaxial), and a 1 ri InP layer 90 (substrate, orientation [100]). Layers have a doping type and a polarity 2 opposite of the embodiment above.
3 The application of InGaAsP does not affect the overall functional scheme 4 (governor-integrator-quantifier-amplifier) of the device. The desired wavelength is defined by the absorption layer band gap and width, which has a range of 1.06-1.6 m.
6 The wide-band material from which the amplifier and substrate are composed (InP) is 7 transparent for this wavelength. The separation of the amplifier from the absorber 8 allows for increased quantum efficiency, since neither the amplifier nor the substrate 9 enclose the absorber from light. The insulator or Si3N4 layer 93 replaces the Si02 layer 107 described above because it provides a better performance match with the InGaAs-11 InP layers. The additional buffer layer between absorber and n InP layer 100 improves 12 their heterobarrier properties, specifically their frequency response.
Transparent 13 electrodes 105 may be composed of ITO or Al-doped ZnO. The device may be 14 illuminated from any side and antireflection coatings added via methods understood in the art.

16 The p+ InP region 102 operates as an integrator such that its interface with the 17 neighboring n YnP layer 100 functions as the quantifier. The n- InP layer 110 is the 18 governor responsible for the delay in the integrator discharge (sufficient to turn OFF
19 the threshold amplifier) and for returning the threshold amplifier to the initial stage by removing the accumulated charge from it. The avalanche region or threshold amplifier 21 corresponds to the n InP layer 100.

22 The width and doping concentration of n InP layer 100, n InGaAsP layer 104, 23 and n InGaAs layer 150 are fabricated via methods understood in the art.
The field 24 strength is sufficient for avalanche multiplication within the n InP layer 100 and to cause a field tail which is sufficiently low within the absorber to prevent tunneling and 26 avalanche current. The field tail gathers the generated photocarriers from the absorber 27 to amplifier, thus allowing the absorber to be fully depleted. The absorber width is 28 sufficient for effective light absorption at the desired wavelength. In some 29 embodiments, the absorber may be made with no field penetration from the n InP layer 100, but with varying band gap that allows photocarriers to reach the depleted n InP
31 layer 100 while avoiding tunneling current in the absorber.

1 Referring now to FIG. 19, a lateral-direction avalanche amplifying structure 2 with transparent electrode 150 and electrode 106 aligned along one side the device is 3 shown and described. The device is an alternate embodiment of the device in FIG. 16, 4 wherein now a ring electrode 106 passes through the SiOa layer 107 and is attached to a p"-Si region 104 embedded within the p=Si layer 100. Furthermore, the electrode 6 106 in FIG. 16 is replaced with a Si02 layer 107, as shown in FIG. 19. The electrodes 7 106 may be composed of a metal or transparent conductive material. The pt-Si region 8 104 blocks injection of electrons from the electrode 106 into the p"-Si layer 100. The 9 doping depth for the p+-Si region 104 is small, typically 0.3 m. The width of the p+-Si region 104 is minimized and preferred to extend slightly beyond the edge of the 11 electrode 106. The distance between the n+-Si region 102 and p+-Si region 104 should 12 be sufficient so that the lateral component of the field from the p-Si region 103 is small 13 and does not cause tunnel currents withiri the p+-Si region 104.
Functionality of this 14 device is as described above for FIG. 16.

Referring now to FIG. 20, a lateral-direction avalanche amplifying structure 1 16 with three electrodes is shown and described. The device is an alternate embodiment 17 of the device in FIG. 16, wherein a ring-shaped electrode 117 is disposed about the 18 transparent electrode 105 and contacting the Si02 layer 107. Electrode 117 is 19 composed of a transparent conductive material examples of which are provided above.
The electrode 117 allows additional tuning of the device characteristics, including but 21 not limited to spectral sensitivity, response time for different wavelengths, and 22 compensates the fixed charge in the protective oxide. A DC voltage is applied to the 23 electrode 117 in a manner that allows optimization of the device. The protective SiO2 24 layer 107 should be sufficiently thick, typically 0.7 m, to prevent the avalanche process within the p or p" layer 100 and the p-Si layer 103 caused by the vertical 26 component of the electric field from electrode 117. Functionality of this device is as 27 described above for FIG. 16.
28 Referring now to FIG. 21, a lateral-direction avalanche amplifying structure 1 29 with a single electrode aligned along one side of the device is shown and described.
The device is an alternate embodiment of the device in FIG. 16, wherein the 31 transparent electrode 105 completely covers the top surface of the Si02 layer 107. The 1 primary advantage of this embodiment is that more voltime of the p--Si layer 100 is 2 depleted improving the collection of photocarriers and response time of the device.
3 The protective Si02 layer 107 should be sufficiently thick, typically 0.7 m, to prevent 4 the avalanche process within the p or p--Si layer 100 and the p-Si layer 103 caused by the vertical component of the electric field from electrodes 105.
Functionality of this 6 device is as described above for FIG. 16.
7 Referring now to FIG. 22, a lateral-direction avalanche amplifying structure 8 with bloclcing layer is shown and described. The device is an alternate embodiment of 9 the device in FIG. 16, wherein the blocking layer is a n-Si layer 120 disposed between the SiO2 layer 107 and the p or p--Si layer 100. The n-Si layer 120 is preferred to be 11 thin, typically 0.3 m, with doping type opposite to that of p or p--Si layer 100. The p 12 or p--Si layer 100 forms a buried channel under the Si-Si02 interface to improve the 13 transport of photocarriers along the interface. The blocking layer is fabricated via 14 methods understood in the art. An advantage of this device includes improved stability because the avalanche process is moved away from interface and injection of hot 16 carriers into Si02 is thereby suppressed. FIG. 23 shows an alternate embodiment to 17 this design wherein the transparent electrode 105 completely covers the p--Si layer 110 18 and SiO2 layer 107. FIG. 24 shows an alternate embodiment to this design wherein the 19 transparent electrode 105 separately contacts the p" Si layer 110 and a third electrode 117 separately contacts Si02 layer 107. Functionality of these devices is as described 21 above for FIG. 16.
22 Referring now to FIG. 25, a lateral-direction avalanche amplifying structure 1 23 with a hole integrator and a single electrode along one side of the device is shown and 24 described. The device differs from the device in FIG. 21 in that the transparent electrode 105 now fills the volume occupied by the p--Si layer 110 and an i-Si layer 26 113 is provided between the p or p" Si layer 100 and the p+-Si layer 91 (substrate). The 27 p-Si layer 103 is wider than previous embodiments.
28 Referring now to FIG. 26, a lateral-direction avalanche amplifying structure 1 29 with a blocking layer, hole integrator, and two electrodes along one side of the device is shown and describe. The device differs from the device in FIG. 24, wherein the 31 transparent electrode 105 now fills the volume once occupied by the p--Si layer 110 1 (electron integrator), the p-Si layer 103 is wider, and a i-Si layer 113 (hole governor) 2 and p*-Si layer 130 are disposed between the p-Si layer 100 and the p+-Si layer 91.
3 FIG. 27 eliminates the electrode 117 and n-Si layer 120 shown in FIG. 26.
4 Single Channel Devices - Changeable Quantifier, Normal Bias A variety of materials are applicable to layers and regions in FIGS. 28A-28B.
6 For example, each layer may be composed of the same or different semiconductor 7 materials, examples including Si, SiC, GaN, GaAs and GaP, which are doped to 8 provide the desired electrical properties. In other embodiments, the governor 6 may be 9 composed of a material having a band gap wider than that of the other layers. In yet other embodiments, the signal transport layer 27 may be composed of a material 11 having a band gap narrower than the other layers. In still other embodiments, the first 12 electrode 2 and/or second electrode 8 may be composed of a conductive metal or light 13 transmissive and conductive material, examples including without limitation 14 transparent ITO and Al-doped ZnO. Furthermore, layers and regions may include two or more layers arranged to form a laminated structure with or without inclusions or 16 regions of yet other non-doped and doped semiconductor materials. Layers and 17 devices may include planar and non-planar shapes. Likewise, the sectional views may 18 represent structures of planar and/or diametric extent. The Si02 layer may be 19 composed of other comparable materials.
Referring now to FIG. 28A, an avalanche amplifying structure 1 with a normal 21 direction of avalanche, MIS-based with drain, and two electrodes is shown and 22 described including a third electrode 50 contacting a dielectric layer 19, a first 23 electrode 2 contacting a governor 6, an avalanche region 3, a substrate contacting both 24 avalanche region 3 and governor 6, and an second electrode 8 contacting the substrate 7. The dielectric layer 19 contacts both avalanche region 3 and governor 6.
The 26 avalanche region 3 contacts the side periphery of the governor 6. The quantifier 4 and 27 integrator 5 are provided at the interface between the dielectric layer 19 and avalanche 28 region 3 when an electric potential is applied between the first and second electrodes 29 2, 8 and the Geiger (over breakdown) avalanche mode is created in the avalanche region 3, and the third electrode 50 with an applied voltage at which the charge stored 31 on the integrator 5 drains through the governor 6 to the first electrode 2.
FIG. 28B

1 shows the device from FIG. 28A wherein the integrator 5 is provided at the interface 2 between the dielectric layer 19 and the avalanche region 3 and the quantifier 4 is 3 provided between the avalanche region 3 and the substrate 7.
4 FIGS. 29 and 31 refer to specific embodiments of the illustrative devices.
Referring now to FIG. 29, the amplifying structure 1 with a normal direction of 6 avalanche, MIS-based with drain, and electrodes is shown and described. The device 7 includes a transparent electrode 105, an electrode 117, a Si02 layer 107, an i-Si layer 8 110, a p-Si layer 100, a p" Si layer 104 (epitaxial), a p+ Si layer 120 (substrate), and an 9 electrode 106. While the present device operates in the Geiger mode, it differs from the previous examples described above.
11 The p-Si layer 100, with an exemplary resistivity of 1 Ohm-cm, along with the 12 SiO2 layer 107 and the electrode 105 operate as a MIS structure which is fully 13 depleted because the minority carriers drain current from p-Si layer 100 along the Si-14 Si02 interface to the i-Si layer 110 and then to electrode 117. Voltage to the electrode 105 should be sufficiently high to provide a Geiger mode avalanche in the p-Si layer 16 100. Voltage applied to electrode 117 should be sufficient to drain current from p-Si 17 layer 100 to the i-Si layer 110, but smaller than is necessary for avalanche breakdown 18 in the i-Si layer 110. Avalanche within the p-Si layer 104 is absent, even though it has 19 a higher potential than p-Si layer 100, due to its lower doping. Contact between the electrode 117 and i-Si layer 110 is preferred to be non-injecting, thus including a 21 Shottky barrier to block injection of electrons. In some embodiments, a thin xi layer 22 may be provided along the top of i-Si layer 110 to block electron injection. The 23 transparent electrode 105 may be composed of ITO or ZNO with a high conductivity.
24 The electrodes 106 and 107 may be composed of a metal or transparent conductive material. The oxide thickness in the Si02 layer 107 is small, typically 0.1 m, to 26 provide effective avalanche within the p-Si layer 100.

27 Referring now to FIGS. 30A-30C, FIG. 30A shows a sequence of material 28 layers corresponding to the structure of FIG. 29 and FIGS. 30B-30C depict energy 29 band diagrams corresponding to the material layer structure shown in FIG.
30A during various operational conditions of the amplifier. FIG. 30D graphically depicts the 31 functional components of the avalanche amplifying structure shown in FIG.
29.

1 In the initial state, the electric field strength within the p-Si layer 100 is 2 sufficient for impact ionization when a positive voltage is applied to transparent 3 electrode 105. The normal operating voltage should exceed the breakdown voltage, 4 thus initiating the Geiger mode.
During amplification, avalanche multiplication occurs near the Si-Si02 interface 6 within the p-Si layer 100, as shown in Fig. 28C by the free carriers or electrons 62.
7 The process is self-sustaining due to the avalanche multiplication, wherein the current 8 filament with current density grows exponentially in time. Filament electrons are 9 accumulated at the Si-Si02 interface. The mobility of these electrons is not high so they are accumulated locally, thus screening the electric field within the filament area 11 and terminating the avalanche process. The Si-Si02 interface operates as a HF
12 integrator with a time constant, defined by the mobility of electrons spreading along 13 the interface.
14 .After amplification, the initial electrons 62 result in a calibrated charge package or FIRST package, as shown in FIG. 30D. The appearance of this package at the 16 interface results from the oxide capacitance and corresponds to the charge package at 17 the electrode 105 (FiF reader), where it may be detected.
18 After termination of the current filament, the resultant charge flow along the 19 interface to the LF integrator and the region where the current filament occurred is restored to the initial state. The interface lead, also the HF governor, removes charge 21 from the HF integrator with a delay sufficient to turn the threshold amplifier OFF. The 22 Si-SiO2 interface functions as the quantifier as it is defined by the field within the p-Si 23 layer 100.
24 Each current fil.ament occupies a rather small area, typically less than several square m's. Therefore, several filaments may exist within the p-Si layer 100 26 simultaneously producing several charge packages. As such, the device operates as a 27 multi-channel photon counter if the p-Si layer 100 is large enough in comparison to the 28 charge spots resulting from the filaments.
29 Referring now to FIG. 31, the amplifying structure 1 with a normal direction of avalanche, NI[S-based with drain, and electrodes is shown and described. In this 1 embodiment; a n'-Si layer 120 is provided immediately between the i-Si layer 110 and 2 the p=Si layer 104, as compared to FIG. 29.
3 The p-Si layer 100, with an exemplary resistivity of 1 Ohm-cm, and Si02 layer 4 107 operate as a MIS structure which is fully depleted because the minority carriers drain current from the p-Si layer 100 along the Si-Si02 interface to the p+-Si layer 120.
6 In the absence of avalanche multiplication in the p-Si layer 100, current charging to the 7 LF integrator (p+-Si layer120) is negligible and the LF integrator is in a steady-state S due to the discharge current (both holes 64 and electrons 62) through the LF
governor 9 (i-Si layer 110). The charge-discharge mechanism of the LF integrator is the same as described for FIG. 9. The oxide thickness for the Si02 layer 107 is small, typically 0.1 11 m, to provide effective avalanche within the p-Si layer 100.
12 Referring now to FIGS. 32A-32C, FIG. 32A shows a sequence of material 13 layers corresponding to the structure of FIG. 31 and FIGS. 32B-32C depict energy 14 band diagrams corresponding to the material layer structure shown in FIG.
32A during various operational conditions of the amplifier. FIG. 32D graphically depicts the 16 functional components of the avalanche amphfying structure shown in FIG.
31.
17 In the initial state, the electric field strength within the p-Si layer 100 is 18 sufficient for impact ionization when a positive voltage is applied to transparent 19 electrode 105. The normal operating voltage should exceed the breakdown voltage, thus initiating the Geiger mode.
21 During amplification, avalanche multiplication occurs near the Si-Si02 interface 22 within the p-Si layer 100, as shown in Fig. 32C by the free carriers or electrons 62.
23 The process is self-sustaining due to the avalanche multiplication, wherein the current 24 filament with current density grows exponentially in time. The filament electrons are accumulated at the Si-Si02 interface. The mobility of these electrons is not high so 26 they are accumulated locally, thus screening the electric field within the filament area 27 and terminating the avalanche process. The Si-Si02 interface operates as a HF
28 integrator with a time constant, defined by the mobility of electrons spreading along 29 the interface.
After amplification, the initial electrons result in a calibrated charge package or 31 FIRST package, as shown in FIG. 32D. The appearance of this package at the 1 interface results from the oxide capacitance and corresponds to the charge package at 2 the electrode 105 (HF reader), where it may be detected.
3 After termination of the current filament, the resultant charge flow along the 4 interface to the n*-Si layer 102 (LF integrator) and the region where the current filament occurred is restored to the initial state. The interface lead, also the HF
6 governor, removes charge from the HF integrator with a delay sufficient to turn the 7 threshold amplifier OFF. The Si-Si02 interface functions as the quantifier as it is 8 defined by the field within the p-Si layer 100.
9 Each current filament occupies a rather small area, typically less than several square m's. Therefore, several filaments may exist within the p-Si layer 100 11 simultaneously producing several FIRST charge packages. The capacity and discharge 12 current of the LF integrator should be sufficient so that the LF integrator does not 13 change its state after the collection of the FIRST charge package; however, the 14 integrating-relaxation time of the LF integrator will be higher than that of HF
integrator. The integration time is regulated by the voltage applied to the etectrode 16 117. Several charge packages may be gathered within the integration time and the field 17 is decreased in the p-Si layer 100 because charge is not removed from it.
Thus, the LF
1$ integrator accumulates a SECOND charge package, also shown in FIG. 32D, 19 consisting of a predefined number of FIRST packages.

As represented in FIG. 32D, several amplification channels may exist 21 simultaneously within the p-Si layer 100 depending on the number of free carriers, 22 each initiating the multiplication process where they hit. Three such processes or 23 virtual channels are shown in FIG. 32D. Each virtual channel has the same set of 24 functional elements, including reader 9, threshold amplifier 10, quantifier 11, HF (high frequency) integrator 12, HF governor 13, and HF reader 14. All HF governors within 26 the virtual channels are connected to a single LF (low frequency) integrator 21 which 27 accumulates FIRST packages after they are drained through the HF governors 13.
28 This second stage of the discrete amplifier functional scheme, forming the SECOND
29 calibrated packages, includes a LF integrator 21, a LF governor 22, a LF
reader 23, all shown in FIG. 32D.

1 It is readily apparent that the described device allows one to detect a few-2 photon pulses as a digital or calibrated or signal on the electrode 117 while non-signal 3 pulses caused by thermogeneration at the same electrode 117 are easily discriminated, 4 Voltage regulation of the LF integration time at the electrode 117 allows the device to detect the pulse length of light with PET applicability. Also, one can count single-6 photon events with high time resolution by reading the signal at the electrode 105, 7 with photon counter applicability.

8 Multi-Channel Devices 9 The single-channel avalanche amplifying devices described above may be integrated into a variety of multi-channel devices, providing full functionality for a 11 photodetector with discrete amplification as described in USPN 6,885,827.
The 12 following examples illustrate exemplary arrays and are in no manner intended to be 13 limiting. Thus, the present invention includes all avalanche amplifying devices wherein 14 the interface between two layers within a semiconductor laminate disposed between two or more electrodes function as either a qumtifier, an integrator, or a quantifier and 16 integrator either separately or in combination.
17 Referring now to FIG. 33, an avalanche amplifying structure 1 with a lateral .
18 direction of avalanche and hole integrator is shown and described. The device includes 19 a first electrode 2, a contact layer 25, an avalanche region 3, a signal transport layer 27, a dielectric layer 19, an integrator 5, a governor 6, a substrate 7, and a second 21 electrode 8.

22 Referring now to FIG. 34, the structure from FIG. 33 is shown arranged to 23 form an array comprised of three avalanche amplifying structures 1. For purposes of 24 the present invention, array means two or more avalanche amplifying structures 1 arranged in a geometric pattern. Abutting pairs of avalanche amplifying structures 1 26 are preferred to be separated by a gap not less than 0.5 m. The gap between 27 integrators 5 may be filled with a semiconductor material which also composes the 28 avalanche region, a lightly doped semiconductor material of same conductivity type as 29 the integrator 5, or a dielectric material. It is preferred for avalanche amplifying structures 1 to be geometrically and dimensionally identical. Avalanche amplifying ,-31 structures 1 may include a variety of regular and arbitrary shapes including triangles, 1 rectangles, squares, polygons, and circles. In some embodiments, a third electrode 50 2 may be added to the structure as described above. First electrodes 2, second electrodes 3 8, and third electrodes 50, and substrates 7 may be comprised of separate single 4 continuous sheets onto which other layers within the avalanche amplifying structures 1 are attached. First electrodes, second electrodes, and third electrodes may be 6 composed of a transparent. In other embodiments, a dielectric layer 19, blocking layer 7 24, or conductive region 25 may be added to the structure to enhance the performance 8 of the avalanche amplifying structure 1, as described above.
9 Referring now to FIG. 3 5, a schematic illustration of the multi-channel device in FIG. 34 including the single channel element from FIG. 33 is shown and described.
11 The device includes three transparent electrodes 105, n+-Si regions 102, a p-Si layer 12 103, p+ regions 130, a p-Si layer 100, an i-Si layer 113, a p+-Si layer 90, and an 13 electrode 106. The device is fabricated on a silicon substrate with doping having a 14 resistivity of 0.01 Ohm-cm, an orientation [100] and a thickness of 350 m.
The i-Si layer 113 is an epitaxial silicon without doping with a width so that the distance 16 between p+-Si regions 130 and p~-Si layer 90 is 2 m. The p+-Si regions 130 include p+
17 type doping is the first epitaadal layer and are dimensionally sized to be small. The 18 second epita?dal layer or p-Si layer 100 has a width so that the distance between n-Si 19 regions 102 and p+-Si regions 130 is 5 m. The p-Si layer 1001ayer is p-doped with a resistance of 7-10 Ohm-cm. The third p-doped epitaxial layer has resistance of 1 Ohm-21 cm and a width of 2 m. The n+-Si layer 102 is fabricated by diffusion with a n-type 22 impurity. The top surface is oxidized with a thickness of 0.5 m, then ITO
is deposited 23 and etched (via lithography) to form electrodes 105. The electrodes 105 have a 24 diameter of 2 pm and all are connected with each other and the metal contact plate by a transparent conductor 105. The metal electrode 106 is fabricated via methods 26 understood in the art.
27 Channels may be packed to form a variety of patterns and shapes. The 28 distance between channels is typically 10-14 m. This distance may be in the range 8-29 30 m in order to optimize quantum efficiency at a desired wavelength, timing resolution, and minimize channel interaction or cross-talk. Lower interaction is 1 achieved with larger distances; however, larger distances decrease the quantum 2 efficiency. Thus, the optimum distance depends on end use of the device.
3 FIG. 36 shows an exemplary top plan view of a multi-channel device wherein 4 seven transparent electrodes 105 are disposed about a device having a transparent cover 150. A pair of wires 152 from the device to a contact plate 151 is shown so as 6 to communicate signals to a recording device. FIG. 37 shows a device having a single 7 transparent cover 150.
8 Referring now to FIGS. 38A 38E, several additional exemplary multi-channel 9 devices are shown and described.
In FIG. 38A, the multi-channel device is composed of three avalanche 11 amplifying structures 1 with a normal direction of avalanche, as provided in FIG. 7A
12 above. The avalanche amplifying structures 1 include a first electrode 2, a governor 6, 13 an integrator 5, a quantifier 4, an avalanche region 3, a substrate 7, and a second 14 electrode 8 arranged in the order described. Individual integrators 5 and quantifiers 4 are separated by a distance not less than 0.5 m. The space between integrators 5 16 includes a dielectric layer 19 composed of a semiconductor material, preferably lightly 17 doped, of which the avalanche region 3 is composed. The integrators 5 and quantifiers 18 4 are preferred to be equidistant from each other having a distance not less than 0.5 19 m. Furthermore, the integrators 5 and quantifiers 4 may be shaped in the form of a regular polygon, a square, a hexagon, or a circle. The first electrodes 2 may be 21 disposed over the whole working area of the multi-channel device. The first electrode 22 may be a mesh electrode which contacts the governor 6 above all of the individual 23 integrators 5.

24 In FIG. 38B, the multi-channel device is composed of three avalanche amplifying structures with a lateral direction of avalanche, as provided in FIG. 15D.
26 The avalanche amplifying structures 1 include a first electrode 2, a governor 6, an 27 integrator 5, a substrate 7 and a second electrode 8, arranged in the order described.
28 The integrator 5 is disposed within a hole along the avalanche region 3 so that contact 29 between the two elements provides a ring-shaped quantifier 4. First electrode 2, second electrode 8, integrators 5 and governor 6 are separated from other each by a 31 distance not less than 0.5 m. The space between integrators 5 includes a dielectric 1 layer 19 composed of a semiconductor material, preferably lightly doped, of which the 2 avalanche region 3 is composed. The integrators 5 and quantifiers 4 are preferred to be 3 equidistant from each other having a distance not less than 0.5 m. The first electrodes 4 2 may include a solid electrode which covers the entire working area of the structure.
Likewise, it is possible for the first electrodes 2 to be composed of a mesh electrode 6 which provides electrical contact with the governor 6 above the individual integrators 7 5. The governor 6 may be disposed exclusively under the mesh structure of the first 8 electrode 2. The integrators 5 may be spaced equidistant from each other having a 9 distance no less than 0.5 m. The integrators 5 and quantifiers 4 may be shaped in the form of a regular polygon, a square, a hexagon, or a circle.
11 In FIG. 3 8C, the multi-channel device is composed of three avalanche 12 amplifying structures 1 with a lateral direction of avalanche, as provided in FIG. 15C
13 above. The avalanche amplifying structures 1 include a first electrode 2, a governor 6, 14 an integrator 5, an avalanche region 3, and a substrate 7, arranged in the order described. The second electrode 8 is a ring-shaped structure which contacts the 16 avalanche region 3 opposite of the substrate 7. The quantifier 4 is vertically disposed 17 and between the integrator 5 and avalanche region 3 so that the contact region 18 between the two elements provides a ring-shaped quantifier 4. The second electrode 8 19 is a mesh-type element so that its electric contact with the governor 6 and integrator 5 is avoided. The avalanche regions 3 and second electrodes 8 are covered by a 21 dielectric layer 19 so that the first electrode 2 electrically contacting the governor 6 22 within each avalanche amplifying structure 1 has no electrical contact with the second 23 electrode 8, avalanche region 3, and integrator 5.
24 In FIG. 38D, the multi-channel device is composed of three avalanche amplifying structures 1 with a lateral direction of avalanche. The avalanche amplifying 26 structures 1 include a first electrode 2, a governor 6, an integrator 5, a substrate 7, and 27 a second electrode 8, arranged in the order described. The quantifier 4 is vertically 28 disposed and between the integrator 5 and avalanche region 3 which surrounds the 29 integrator 5 so that the contact region between the two elements provides a ring-shaped quantifier 4. A dielectric layer 19 is provided between a third electrode 50 and 31 the avalanche region 3. A second dielectric layer 19 is also provided above the third 1 electrode 50 and contacts the governors 6. The dielectric layers 19 electrically isolate 2 the first electrode 2 and third electrode 50 from elements composing'the structure. The 3 third electrode 50 does not contact the governors 6. Integrators 5 and governors 6 are 4 equidistance from each other at a distance no less than 0.5 m.
In FIG. 38E, the multi-channel device is composed of three avalanche 6 amplifying structures 1 with a normal direction of avalanche, as provided in FIG. 1.
7 The avalanche amplifying structures 1 include a first electrode 2, an avalanche region 8 3, a quantifier 4 disposed between the interface of the avalanche region 3 and 9 integrator 5, an integrator 5, a governor 6, a substrate 7, and a second electrode 8, arranged in the order described. First electrode 2, second electrode 8, integrators 5 11 and governor 6 are separated from other each by a distance not less than 0.5 m. The 12 space between integrators 5 includes a dielectric layer 19 composed of a 13 semiconductor material, preferably lightly doped, of which the avalanche region 3 is 14 composed. The integrators 5 and quantifiers 4 are preferred to equidistant from each other having a distance not less than 0.5 m. The first electrodes 2 may include a solid 16 electrode which covers the entire working area of the structure. Likewise it is possible 17 for the first electrodes 2 to be composed of a mesh electrode which provides electrical 18 contact with the governor 6 above the individual integrators 5. The governor 6 may be 19 disposed exclusively under the mesh structure of the first electrode 2. The integrators 5 may be spaced equidistant from each other having a distance no less than 0.5 m.
21 The integrators 5 and quantifiers 4 may be shaped in the form of a regular polygon, a 22 square, a hexagon, or a circle.
23 The description above indicates that a great degree of flexibility is offered in 24 terms of the present invention. Although the present invention has been described in considerable detail with reference to certain preferred versions thereof, other versions 26 are possible. Therefore, the spirit and scope of the appended claims should not be 27 limited to the description of the preferred versions contained herein.
28 6. Industrial Applicability 29 As is evident from the explanation above, the described invention includes various intelligent amplifying avalanche structures operating on the principles 31 described herein. Devices are applicable as self-contained lughly sensitive instruments 1 capable of recording and counting individual electrons and photons. Devices are also 2 applicable within arrayed configurations.
3 Accordingly, the described invention is expected to be used within 4 photodetectors, electron amplifiers, chemical and biological sensors, and chemical and biological chips with lab-on-a-chip applications. Structures have immediately 6 applicability to devices critical to homeland defense.

Claims (165)

What is claimed is:

1. An avalanche amplifying structure operating in the Geiger mode comprising:
(a) a heavily doped substrate;
(b) a laminated semiconductor structure including:
(i) an avalanche region with conductance opposite said substrate;
(ii) an integrator layer which accumulates a signal charge comprised of a heavily doped material with conductance same as said substrate, said integrator layer contacting said avalanche region along an interface which functions as a quantifier to regulate the avalanche process; and (iii) a governor layer which drains said integrator and controls said quantifier, said governor layer contacting said integrator layer opposite said avalanche region, said governor layer contacting said substrate;
(c) a first electrode communicating with said avalanche region opposite said integrator; and (d) a second electrode communicating with said substrate opposite said governor layer.

2. The avalanche amplifying structure of claim 1, wherein said governor is comprised of a high impedance material.

3. The avalanche amplifying structure of claim 1, wherein said governor has a first energy barrier for a plurality of first carriers which accumulate on said integrator layer for transport into said governor layer from the direction of said integrator and a second energy barrier for a plurality of second carriers of conductivity type opposite said first carriers for transport into said governor from the direction of said substrate.

4. The avalanche amplifying structure of claim 1, wherein said governor has a high impedance in the direction normal to the governor layer.

5. The avalanche amplifying structure of claim 1, wherein said governor is comprised of a low doped material.

6. The avalanche amplifying structure of claim 1, wherein said substrate, said avalanche region, said integrator layer, and said governor layer are comprised of the same semiconductor material.

7. The avalanche amplifying structure of claim 1, wherein said substrate, said avalanche region, and said integrator layer are comprised of the same semiconductor material and said governor layer is comprised of a material having a band-gap which is wider than said avalanche region, said integrator layer and said substrate.

8. The avalanche amplifying structure of claim 1, further comprising:
(e) an insulator having at least one opening that allows said first electrode to contact said avalanche region.

9. The avalanche amplifying structure of claim 8, further comprising:
(f) a heavily doped region having the same conductance as said avalanche region disposed within said avalanche region between said avalanche region and said insulator at each said opening so as to prevent direct electrical contact between said avalanche region and said first electrode.

10. The avalanche amplifying structure of claim 9, further comprising:
(g) a second governor comprised of a high-impedance semiconductor material between said first electrode and said heavily doped region and residing within said opening, a second integrator formed at the interface between said avalanche region and said second governor.

11. The avalanche amplifying structure of claim 9, further comprising:
(g) a buried layer comprised of a semi-conductor material having the same conductance as said substrate and adjacent to said heavily doped regions.

12. The avalanche amplifying structure of claim 9, further comprising:
(g) a semiconductor layer with lower mobility for holes in the lateral direction, said semiconductor layer comprised of a doped material having a conductance opposite said substrate and disposed along said avalanche region adjacent to said heavily doped regions.

13. The avalanche amplifying structure of claim 1, further comprising:
(e) a signal transport layer comprised of a low-doped semiconductor material having a conductance similar to said avalanche region and disposed between and contacting said first electrode and said avalanche region, said signal transport layer generating a plurality of free charge carriers and transporting said free charge carriers into said avalanche region.

14. The avalanche amplifying structure of claim 13, wherein said substrate, said avalanche region, said integrator layer, said governor layer and said transport layer are comprised of the same semiconductor material.

15. The avalanche amplifying structure of claim 13, wherein said substrate, said avalanche region, said integrator layer, said governor layer and said transport layer are comprised of Si.

16. The avalanche amplifying structure of claim 13, wherein said substrate, said avalanche region, said integrator layer, said governor layer and said transport layer are comprised of SiC, GaN, GaAs or GaP.

17. The avalanche amplifying structure of claim 13, wherein said substrate, said avalanche region, said integrator layer, and said governor layer are comprised of the same semiconductor material and said signal transport layer is comprised of a material having a band gap which is narrower than said substrate, said avalanche region, said integrator layer, and said governor layer.

18. An avalanche amplifying structure operating in the Geiger mode comprising:

(a) a heavily doped substrate;
(b) a laminated semiconductor structure including:
(i) a governor layer; and (ii) an avalanche region with conductance opposite said substrate, said avalanche region contacting said governor layer along a first interface which functions as an integrator, said avalanche region contacting said substrate opposite said governor layer along a second interface which functions as a quantifier to regulate the avalanche process, said integrator accumulates a signal charge, said governor drains said integrator and controls said quantifier;

(c) a first electrode communicating with said governor layer opposite said avalanche region; and, (d) a second electrode communicating with said substrate opposite said substrate.

19. The avalanche amplifying structure of claim 18, wherein said governor is comprised of a high impedance material.

20. The avalanche amplifying structure of claim 18, wherein said governor has a first energy barrier for a plurality of first carriers which accumulate on said integrator layer for transport into said governor layer from the direction of said integrator and a second energy barrier for a plurality of second carriers of conductivity type opposite said first carriers for transport into said governor from the direction of said substrate.

21. An avalanche amplifying structure operating in the Geiger mode comprising:
(a) a heavily doped substrate;
(b) a laminated semiconductor structure including:
(i) an avalanche region contacting said substrate;
(ii) an integrator layer which accumulates of a signal charge, said integrator layer comprised of a heavily doped material with conductance opposite said substrate, said integrator layer contacting said avalanche region opposite said substrate along an interface which functions as a quantifier to regulate the avalanche process; and (iii) a governor layer which drains said integrator layer and controls said quantifier, said governor layer contacting said integrator layer opposite said avalanche region;
(c) a first electrode communicating with said governor layer opposite said integrator layer; and (d) a second electrode communicating with said substrate opposite said avalanche region.

22. The avalanche amplifying structure of claim 21, wherein said governor is comprised of a high impedance material.

23. The avalanche amplifying structure of claim 21, wherein said governor has a first energy barrier for a plurality of first carriers which accumulate on said integrator layer for transport into said governor layer from the direction of said integrator and a second energy barrier for a plurality of second carriers of conductivity type opposite said first carriers for transport into said governor from the direction of said first electrode.

24. The avalanche amplifying structure of claim 21, further comprising:

(e) an insulator layer disposed on a portion of said integrator, said governor is disposed on a portion of said integrator.

25. The avalanche amplifying structure of claim 24, further comprising:
(f) a guard ring within said avalanche region and contacting said insulator layer, said guard ring comprised of a low-doped material having the same conductance type as said integrator, said guard ring electrically contacting said integrator at its periphery.

26. The avalanche amplifying structure of claim 24, further comprising:
(f) a semiconductor material with low-doping and having the same conductance type as said avalanche region between said avalanche region and said integrator on one side and said substrate on another side so that said governor electrically contacts said integrator only, said avalanche region adjoining said integrator layer so as to avoid contact with an edge along said integrator.

27. The avalanche amplifying structure of claim 21, wherein said substrate, said avalanche region, said integrator layer, and said governor layer are comprised of the same semiconductor material.

28. The avalanche amplifying structure of claim 21, wherein said substrate, said avalanche region, and said integrator layer are comprised of the same semiconductor material and said governor layer is comprised of a material having a band-gap which is wider than said avalanche region, said integrator layer and said substrate.

29. The avalanche amplifying structure of claim 21, further comprising:
(e) a signal transport layer comprised of a low-doped semiconductor material having a conductance similar to said avalanche region and disposed between and contacting said second electrode and said avalanche region, said signal transport layer generating a plurality of free charge carriers and transporting said free charge carriers into said avalanche region.

30. The avalanche amplifying structure of claim 29, wherein said substrate, said avalanche region, said integrator layer, said governor layer, and said signal transport layer are comprised of the same semiconductor material.

31. The avalanche amplifying structure of claim 29, wherein said substrate, said avalanche region, said integrator layer, said governor layer and said transport layer are comprised of Si.

32. The avalanche amplifying structure of claim 29, wherein said substrate, said avalanche region, said integrator layer, said governor layer and said transport layer are comprised of SiC, GaN, GaAs or GaP.

33. The avalanche amplifying structure of claim 29, wherein said substrate, said avalanche region, said integrator layer, and said governor layer are comprised of the same semiconductor material and said signal transport layer is comprised of a material having a band gap which is narrower than said substrate, said avalanche region, said integrator layer, and said governor layer.

34. The avalanche amplifying structure of claim 29, wherein said integrator layer has limited conductance parallel to the plane of said substrate.

35. An avalanche amplifying structure operating in the Geiger mode comprising:

(a) a heavily doped substrate;
(b) a laminated semiconductor structure including:
(i) a governor contacting said substrate;
(ii) an integrator comprised of a heavily doped semiconductor material having the same conductivity type as said substrate, said integrator accumulating a signal charge, said integrator contacting said governor to drain said charge from said integrator;
(iii) an avalanche region comprised of a material having the same conductivity type as said substrate, said avalanche region contacting said integrator; and (iv) a quantifier comprised of a heavily doped semiconductor type and conductance opposite of said substrate, said quantifier contacting said avalanche region, said quantifier regulating the avalanche process, said governor drains said integrator and controls said quantifier;
(c) a first electrode communicating with said quantifier; and (d) a second electrode communicating with said substrate.

36. The avalanche amplifying structure of claim 35, wherein said governor is comprised of a high impedance material.

37. The avalanche amplifying structure of claim 3 5, wherein said governor has a first energy barrier for a plurality of first carriers which accumulate on said integrator layer for transport into said governor layer from the direction of said integrator and a second energy barrier for a plurality of second carriers of conductivity type opposite said first carriers for transport into said governor from the direction of said substrate.

3 8. The avalanche amplifying structure of claim 35, further comprising:
(e) an insulator layer having at least one opening for electrical contact between said first electrode and said quantifier.

39. The avalanche amplifying structure of claim 38, further comprising:
(f) a guard ring within said avalanche region and contacting said insulator layer and comprised of a low-doped material having the same conductivity type as said quantifier, said ring guard contacting said quantifier about its periphery.

40. The avalanche amplifying structure of claim 38, further comprising:
(f) a semiconductor layer comprised of a low-doped material having the same conductance as said avalanche region and disposed between said avalanche region and quantifier on one side and said integrator on the other side.

41. An avalanche amplifying structure operating in the Geiger mode comprising:

(a) a heavily doped substrate having the same conductivity type as said substrate;
(b) a laminated semiconductor structure including:
(i) a governor;
(ii) an integrator comprised of a heavily doped semiconductor material having the same conductivity type as said substrate, said integrator accumulating a signal charge, said integrator contacting said governor to drain said charge from said integrator and controlling said quantifier;
(iii) an avalanche region comprised of a material having the same conductivity type as said substrate, said avalanche region contacting said integrator; and (iv) a quantifier comprised of a heavily doped semiconductor type and conductance opposite of said substrate, said quantifier disposed within said avalanche region, said quantifier regulating the avalanche process;
(c) a first electrode communicating with said quantifier; and (d) a second electrode communicating with said substrate.

42. The avalanche amplifying structure of claim 41, wherein said governor is comprised of a high impedance material.

43. The avalanche amplifying structure of claim 41, wherein said governor has a first energy barrier for a plurality of first carriers which accumulate on said integrator layer for transport into said governor layer from the direction of said integrator and a second energy barrier for a plurality of second carriers of conductivity type opposite said first carriers for transport into said governor from the direction of said substrate.

44. An avalanche amplifying structure operating in the Geiger mode comprising:
(a) a heavily doped substrate;
(b) a laminated semiconductor structure including:
(i) an avalanche region contacting said substrate; and (ii) an governor layer contacting said avalanche region opposite said substrate along an interface which functions as a quantifier to regulate the avalanche process and functions as an integrator to accumulate a signal charge, said avalanche region and said governor layer drains said integrator and controls said quantifier;
(c) a first electrode communicating with said governor layer opposite said avalanche region; and (d) a second electrode communicating with said substrate opposite said avalanche region.

45. The avalanche amplifying structure of claim 44, wherein said governor is comprised of a high impedance material.

46. The avalanche amplifying structure of claim 44, wherein said governor has a first energy barrier for a plurality of first carriers which accumulate on said integrator layer for transport into said governor layer from the direction of said integrator and a second energy barrier for a plurality of second carriers of conductivity type opposite said first carriers for transport into said governor from the direction of said first electrode.

47. The avalanche amplifying structure of claim 44, wherein said interface has limited conductance parallel to the plane of said substrate.

48. An avalanche amplifying structure operating in the Geiger mode comprising:

(a) a substrate;
(b) a laminated semiconductor structure including:
(i) an avalanche region;
(ii) an integrator layer which accumulates a signal charge, said integrator layer residing within a cavity within said avalanche region and contacting said avalanche region along a ring-shaped interface which functions as a quantifier to regulate the avalanche process, said avalanche region and said integrator layer contacting said substrate; and (iii) a governor layer which drains said integrator and controls said quantifier, said governor layer contacting said integrator layer opposite said substrate;
(c) a first electrode communicating with said governor layer opposite said integrator layer; and (d) a second electrode communicating with said substrate opposite said avalanche region and said integrator layer.

49. The avalanche amplifying structure of claim 48, wherein said governor is comprised of a high impedance material.

50. The avalanche amplifying structure of claim 48, wherein said governor has a first energy barrier for a plurality of first carriers which accumulate on said integrator layer for transport into said governor layer from the direction of said integrator and a second energy barrier for a plurality of second carriers of conductivity type opposite said first carriers for transport into said governor from the direction of said first electrode.

51. The avalanche amplifying structure of claim 48, wherein said substrate is a doped semiconductor material.

52. The avalanche amplifying structure of claim 48, wherein said substrate and said avalanche region are comprised of the same semiconductor material.

53. The avalanche amplifying structure of claim 48, wherein said substrate and said avalanche region are comprised of a semiconductor material with the same type of conductivity, said substrate is less doped than said avalanche region.

54. The avalanche amplifying structure of claim 53, wherein said avalanche region is effected by said second electrode.

55. The avalanche amplifying structure of claim 53, wherein said avalanche region is effected by said first electrode.

56. The avalanche amplifying structure of claim 48, further comprising:
(e) a dielectric layer disposed about and contacting the periphery of said governor layer, said dielectric layer contacting said integrator layer and said avalanche region.

57. The avalanche amplifying structure of claim 56, wherein said first electrode also contacts said dielectric layer.

58. The avalanche amplifying structure of claim 56, wherein said first electrode separately contacts said governor layer and said dielectric layer.

59. The avalanche amplifying structure of claim 56, wherein said governor layer also contacts said dielectric layer opposite said integrator layer and said avalanche region, said first electrode also contacts said governor layer opposite said dielectric layer.

60. The avalanche amplifying structure of claim 48, wherein said governor layer and said avalanche region are comprised of the same semiconductor material, said governor layer less doped than said avalanche region.

61. The avalanche amplifying structure of claim 48, wherein said governor layer is comprised of a semiconductor material having a wider band gap than said avalanche region.

62. The avalanche amplifying structure of claim 48, further comprising:
(e) a signal transport layer comprised of a semiconductor material of the same type of conductivity as and less doping than said avalanche region, said signal transport layer generating a plurality of free charge carriers in response to a signal and transporting said free charge carriers to said avalanche region, said substrate and said second electrode extend beyond said avalanche region, said signal transport layer contacting said avalanche region about its periphery and said substrate opposite of said second electrode.

63. The avalanche amplifying structure of claim 62, wherein said signal transport layer and said avalanche region are comprised of the same semiconductor material.

64. The avalanche amplifying structure of claim 62, wherein said signal transport layer and said substrate are comprised of the same semiconductor material with the same type of conductivity and doping concentration.

65. The avalanche amplifying structure of claim 62, wherein said substrate, said avalanche region, said integrator layer, said governor layer, and said signal transport layer are comprised of the same semiconductor material.

66. The avalanche amplifying structure of claim 62, wherein said substrate, said avalanche region, said integrator layer, said governor layer and said signal transport layer are comprised of Si.

67. The avalanche amplifying structure of claim 62, wherein said substrate, said avalanche region, said integrator layer, said governor layer and said signal transport layer are comprised of SiC, GaN, GaAs or GaP.

68. The avalanche amplifying structure of claim 62, wherein said signal transport layer is comprised of a semiconductor material having a narrower band gap than said avalanche region.

69. The avalanche amplifying structure of claim 48, further comprising:
(e) a contact region which is electrically conductive and disposed between said governor layer and said integrator layer;
(f) a blocking layer comprised of a semiconductor material having the same type of conductivity as said avalanche region, said blocking layer contacting said contact region about its periphery, said blocking layer contacting said avalanche region and said integrator layer opposite said substrate.

70. The avalanche amplifying structure of claim 69, wherein said substrate, said avalanche region, said integrator layer, said governor layer, and said blocking layer are comprised of the same semiconductor material.

71. The avalanche amplifying structure of claim 69, wherein said substrate, said avalanche region, said integrator layer, said governor layer and said blocking layer are comprised of Si.

72. The avalanche amplifying structure of claim 69, wherein said substrate, said avalanche region, said integrator layer, said governor layer and said blocking layer are comprised of SiC, GaN, GaAs or GaP.

73. The avalanche amplifying structure of claim 69, further comprising:
(g) a dielectric layer disposed about and contacting the periphery of said governor layer, said dielectric layer contacting said blocking layer.

74. The avalanche amplifying structure of claim 73, wherein said first electrode also covers and contacts said dielectric layer.

75. The avalanche amplifying structure of claim 73, furthering comprising:
(h) a third electrode contacts said dielectric layer.

76. The avalanche amplifying structure of claim 69, wherein said blocking layer and said avalanche region are comprised of a semiconductor material of the same conductivity type, said blocking layer and said avalanche region having the same doping concentration.

77. The avalanche amplifying structure of claim 69, wherein said blocking layer and said avalanche region are comprised of a semiconductor material of the same conductivity type, said blocking layer having a lower doping concentration than said avalanche region.

78. The avalanche amplifying structure of claim 69, wherein said blocking layer and said avalanche region are comprised of a semiconductor material of opposite conductivity type, said blocking layer having a lower doping concentration than said avalanche region.

79. An avalanche amplifying structure operating in the Geiger mode comprising:

(a) a substrate;
(b) a laminated semiconductor structure including:
(i) an avalanche region;
(ii) an integrator layer which accumulates a signal charge, said integrator layer residing within a cavity within said avalanche region and contacting said avalanche region along a ring-shaped interface which functions as a quantifier to regulate the avalanche process, said avalanche region and said integrator layer contacting said substrate; and (iii) a governor layer drains said integrator and controls said quantifier, said governor layer contacting said integrator layer opposite said substrate;
(c) a first electrode communicating with said governor layer opposite said integrator layer; and (d) a second electrode communicating with said avalanche region opposite said substrate.

80. The avalanche amplifying structure of claim 79, wherein said governor is comprised of a high impedance material.

81. The avalanche amplifying structure of claim 79, wherein said governor has a first energy barrier for a plurality of first carriers which accumulate on said integrator layer for transport into said governor layer from the direction of said integrator and a second energy barrier for a plurality of second carriers of conductivity type opposite said first carriers for transport into said governor from the direction of said first electrode.

82. An avalanche amplifying structure operating in the Geiger mode comprising:

(a) a substrate;
(b) a laminated semiconductor structure including:
(i) an avalanche region with the same conductance and high doping as said substrate;
(ii) an integrator layer residing within a cavity within said avalanche region and contacting said avalanche region along a ring-shaped interface which functions as a quantifier to regulate the avalanche process, said integrator accumulates a signal charge; and (iii) a governor layer residing within a cavity within said integrator layer and contacting said integrator layer along a ring-shaped interface, said governor drains said integrator and controls said quantifier;

(c) a first electrode communicating with said governor layer opposite said substrate; and (d) a second electrode communicating with said substrate opposite said avalanche region, said integrator layer, and said governor layer also contacting said substrate.

83. The avalanche amplifying structure of claim 82, wherein said governor is comprised of a high impedance material.

84. The avalanche amplifying structure of claim 82, wherein said governor has a first energy barrier for a plurality of first carriers which accumulate on said integrator layer for transport into said governor layer from the direction of said integrator and a second energy barrier for a plurality of second carriers of conductivity type opposite said first carriers for transport into said governor from the direction of said first electrode.

85. The avalanche amplifying structure of claim 82, further comprising:
(e) a dielectric layer disposed above and contacting the periphery of said governor layer which extends about said integrator layer, said dielectric layer also contacting said integrator layer and said avalanche layer opposite said substrate, said first electrode also contacts and covers said dielectric layer.

86. The avalanche amplifying structure of claim 82, further comprising:
(e) a blocking layer disposed above and contacting the periphery of said governor layer which extends about said integrator layer, said blocking layer also contacting said integrator layer and said avalanche layer opposite said substrate, said blocking layer comprised of a semiconductor material having the same type conductance and low doping as said avalanche region.

87. An avalanche amplifying structure operating in the Geiger mode comprising:

(a) a substrate;
(b) a laminated semiconductor structure including:
(i) an avalanche region; and (ii) a governor layer residing within a cavity within said avalanche region and contacting said avalanche region along a ring-shaped interface, said avalanche region and said governor contacting said substrate;
(c) a dielectric region contacting said avalanche region and said governor layer opposite said substrate, an interface between said avalanche region and said dielectric layer functioning as a quantifier and an integrator, said integrator accumulates a signal charge, said quantifier regulates the avalanche process, said governor drains said integrator and controls said quantifier;
(d) a first electrode residing with a cavity within said dielectric layer and communicating with said governor layer opposite said substrate;
(e) a second electrode communicating with said substrate opposite said avalanche region and said governor layer, said first electrode and said second electrode producing a Geiger avalanche mode within said avalanche region when electrically charged; and (f) a third electrode communicating with said dielectric layer opposite said avalanche region, said third electrode draining said integrator through said governor layer to said first electrode when said third electrode is electrically charged.

88. The avalanche amplifying structure of claim 87, wherein said governor is comprised of a high impedance material.

89. The avalanche amplifying structure of claim 87, wherein said governor has a first energy barrier for a plurality of first carriers which accumulate on said integrator layer for transport into said governor layer from the direction of said integrator and a second energy barrier for a plurality of second carriers of conductivity type opposite said first carriers for transport into said governor from the direction of said first electrode.

90. The avalanche amplifying structure of claim 87, wherein said substrate is heavily doped semiconductor, said quantifier is provided between said substrate and said avalanche region comprised of a semiconductor having a conductance type opposite said substrate, said integrator is provided between said avalanche region and said dielectric layer.

91. An amplifying avalanche structure operating in the Geiger mode comprising:

(a) three electrodes;
(b) an avalanche region comprised of a material having the same conductivity type as said substrate;
(c) an integrator which accumulates a signal charge;
(d) a quantifier for regulating the avalanche process;
(e) a governor drains said integrator and controls said quantifier, said avalanche region, said integrator, said quantifier, and said governor comprises a laminated semiconductor structure disposed on a heavily doped substrate, one said electrode contacting said substrate opposite said laminated semiconductor structure;
(f) an intermediate layer of low-doped semiconductor material of the same conductance type as said substrate, said intermediate layer contacting said avalanche region and a second said electrode; and (g) a dielectric layer contacting said avalanche region and third said electrode, said integrator and said quantifier functions performed along an interface between said avalanche region and said dielectric layer, an electric potential between first and third said electrodes causing a Geiger avalanche mode within said avalanche region, second said electrode draining the charge within said integrator when a voltage is applied thereto.

92. The avalanche amplifying structure of claim 91, wherein said governor is comprised of a high impedance material.

93. The avalanche amplifying structure of claim 91, wherein said governor has a first energy barrier for a plurality of first carriers which accumulate on said integrator layer for transport into said governor layer from the direction of said integrator and a second energy barrier for a plurality of second carriers of conductivity type opposite said first carriers for transport into said governor from the direction of said electrode.

94. The avalanche amplifying structure of claim 91, further comprising:
(h) a contact region comprised of heavily doped material having conductance opposite said substrate between said intermediate layer and second said electrode.

95. The avalanche amplifying structure of claim 91, further comprising:

(h) a second governor comprised of a high-conductance semiconductor material disposed between said intermediate layer and second said electrode

96. An avalanche amplifying structure comprising:
(a) a substrate comprised of doped InP;
(b) a laminated semiconductor structure including:
(i) an insulator layer;
(ii) a governor comprised of doped InP contacting said insulator layer;
(iii) an integrator comprised of doped InP contacting said governor, said integrator accumulates a signal charge;
(iv) a quantifier layer comprised of doped InP contacting said integrator, said quantifier regulates the avalanche process, said governor drains said integrator and controls said quantifier;
(v) a buffer layer comprised of doped InGaAsP contacting said quantifier;
(vi) an absorber comprised of doped InGaAs; and (vii) an epitaxial layer comprised of InP, said substrate contacting said epitaxial layer;
(c) a first electrode communicating with said insulator layer opposite said governor; and (d) a second electrode communicating with said substrate opposite said epitaxial layer.

97. The avalanche amplifying structure of claim 96, wherein said substrate has an orientation of [100].

98. The avalanche amplifying structure of claim 96, wherein said insulator is Si3N4.

99. A multi-channel structure comprising at least two avalanche amplifying structures separately disposed and arranged to form an array, each said avalanche amplifying structure having at least two electrodes disposed about an avalanche region layer, an integrator layer, a governor layer, and a substrate layer, two said layers contacting along a first interface which functions as a quantifier, said quantifier regulates the avalanche process, said integrator accumulates a signal charge, said governor drains said integrator and controls said quantifier.

100. The multi-channel structure of claim 99, wherein abutting pairs of said avalanche amplifying structures are separated by a gap not less than 0.5 µm.

101. The multi-channel structure of claim 99, wherein said gap between said integrators is filled with a semiconductor material also composing said avalanche region.

102. The multi-channel structure of claim 99, wherein said gap between said integrators is filled with a lightly doped semiconductor material of same conductivity type as said integrator.

103. The multi-channel structure of claim 99, wherein said gap between said integrators is filled with a dielectric material which also separates said integrators from said governors.

104. The multi-channel structure of claim 99, wherein said avalanche amplifying structures are geometrically and dimensionally identical.

105. The multi-channel structure of claim 99, wherein said avalanche amplifying structures are triangular, rectangular, square, polygonal, or circular shaped.

106. The multi-channel structure of claim 99, wherein said first electrodes are provided by a single continuous element.

107. The multi-channel structure of claim 106, wherein said single continuous element is transparent.

108. The multi-channel structure of claim 99, further comprising a dielectric layer within each said avalanche amplifying structure.

109. The multi-channel structure of claim 99, wherein said substrate layers are provided by a single continuous element.

110. The multi-channel structure of claim 99, wherein said second electrodes are provided by a single continuous element.

111. The multi-channel structure of claim 110, wherein said single continuous element is transparent.

112. The multi-channel structure of claim 99, further comprising a third electrode within each said avalanche amplifying structure.

113. The multi-channel structure of claim 99, wherein said third electrodes are provided by a single continuous element.

114. The multi-channel structure of claim 113, wherein said single continuous element is transparent.

115. The multi-channel structure of claim 99, wherein said first electrodes are transparent.

116. The multi-channel structure of claim 99, wherein said second electrodes are transparent.

117. The multi-channel structure of claim 99, wherein said third electrodes are transparent.

118. The multi-channel structure of claim 99, further comprising a blocking layer within each said avalanche amplifying structure.

119. The multi-channel structure of claim 99, further comprising a signal transport layer within each said avalanche amplifying structure.

120. The multi-channel structure of claim 99, further comprising a contact region within each said avalanche amplifying structure.

121. A multi-channel structure comprising at least two avalanche amplifying structures separately disposed and arranged to form an array, each said avalanche amplifying structure having at least two electrodes disposed about an avalanche region layer, a governor layer, a dielectric layer and a substrate, two said layers contacting along a first interface which functions as a quantifier, two said layers contacting along a second interface which functions as an integrator, said quantifier regulates the avalanche process, said integrator accumulates a signal charge, said governor drains said integrator and controls said quantifier.

122. The multi-channel structure of claim 121, wherein abutting pairs of said avalanche amplifying structures are separated by a gap not less than 0.5 µm.

123. The multi-channel structure of claim 121, wherein said gap between said integrators is filled with a semiconductor material also composing said avalanche region.

124. The multi-channel structure of claim 121, wherein said gap between said integrators is filled with a lightly doped semiconductor material of same conductivity type as said integrator.

125. The multi-channel structure of claim 121, wherein said gap between said integrators is filled with a dielectric material which also separates said integrators from said governors.

126. The multi-channel structure of claim 121, wherein said avalanche amplifying structures are geometrically and dimensionally identical.

127. The multi-channel structure of claim 121, wherein said avalanche amplifying structures are triangular, rectangular, square, polygonal, or circular shaped.

128. The multi-channel structure of claim 121, wherein said first electrodes are provided by a single continuous element.

129. The multi-channel structure of claim 128, wherein said single continuous element is transparent.

130. The multi-channel structure of claim 121, further comprising a dielectric layer within each said avalanche amplifying structure.

131. The multi-channel structure of claim 121, wherein said substrate layers are provided by a single continuous element.

132. The multi-channel structure of claim 121, wherein said second electrodes are provided by a single continuous element.

133. The multi-channel structure of claim 132, wherein said single continuous element is transparent.

134. The multi-channel structure of claim 121, further comprising a third electrode within each said avalanche amplifying structure.

135. The multi-channel structure of claim 121, wherein said third electrodes are provided by a single continuous element.

136. The multi-channel structure of claim 135, wherein said single continuous element is transparent.

137. The multi-channel structure of claim 121, wherein said first electrodes are transparent.

138. The multi-channel structure of claim 121, wherein said second electrodes are transparent.

139. The multi-channel structure of claim 121, wherein said third electrodes are transparent.

140. The multi-channel structure of claim 121, further comprising a blocking layer within each said avalanche amplifying structure.

141. The multi-channel structure of claim 121, further comprising a signal transport layer within each said avalanche amplifying structure.

142. The multi-channel structure of claim 121, further comprising a contact region within each said avalanche amplifying structure.

143. A multi-channel structure comprising at least two avalanche amplifying structures separately disposed and arranged to form an array, each said avalanche amplifying structure having at least two electrodes disposed about an avalanche region layer, a governor layer, a dielectric layer and a substrate, two said layers contacting along an interface which functions as a quantifier and as an integrator, said quantifier regulates the avalanche process, said integrator accumulates a signal charge, said governor drains said integrator and controls said quantifier.

144. The multi-channel structure of claim 143, wherein abutting pairs of said avalanche amplifying structures are separated by a gap not less than 0.5 µm.

145. The multi-channel structure of claim 143, wherein said gap between said integrators is filled with a semiconductor material also composing said avalanche region.

146. The multi-channel structure of claim 143, wherein said gap between said integrators is filled with a lightly doped semiconductor material of same conductivity type as said integrator.

147. The multi-channel structure of claim 143, wherein said gap between said integrators is filled with a dielectric material which also separates said integrators from said governors.

148. The multi-channel structure of claim 143, wherein said avalanche amplifying structures are geometrically and dimensionally identical.

149. The multi-channel structure of claim 143, wherein said avalanche amplifying structures are triangular shaped, rectangular, polygonal, or circular shaped.

150. The multi-channel structure of claim 143, wherein said first electrodes are provided by a single continuous element.

151. The multi-channel structure of claim 143, wherein said single continuous element is transparent.

152. The multi-channel structure of claim 143, further comprising a dielectric layer within each said avalanche amplifying structure.

153. The multi-channel structure of claim 143, wherein said substrate layers are provided by a single continuous element.

154. The multi-channel structure of claim 143, wherein said second electrodes are provided by a single continuous element.

155. The multi-channel structure of claim 143, wherein said single continuous element is transparent.

156. The multi-channel structure of claim 143, further comprising a third electrode within each said avalanche amplifying structure.

157. The multi-channel structure of claim 143, wherein said third electrodes are provided by a single continuous element.

158. The multi-channel structure of claim 157, wherein said single continuous element is transparent.

159. The multi-channel structure of claim 143, wherein said first electrodes are transparent.

160. The multi-channel structure of claim 143, wherein said second electrodes are transparent.

161. The multi-channel structure of claim 143, wherein said third electrodes are transparent.

162. The multi-channel structure of claim 143, further comprising a blocking layer within each said avalanche amplifying structure.

163. The multi-channel structure of claim 143, further comprising a signal transport layer within each said avalanche amplifying structure.

164. The multi-channel structure of claim 143, further comprising a contact region within each said avalanche amplifying structure.

165. The multi-channel structure of claim 143, wherein said multi-channel structure is applicable to night vision equipment for improved detection in counter-terrorism applications.