CA2564591A1 - Structure de silicium - Google Patents

Structure de silicium Download PDF

Info

Publication number
CA2564591A1
CA2564591A1 CA002564591A CA2564591A CA2564591A1 CA 2564591 A1 CA2564591 A1 CA 2564591A1 CA 002564591 A CA002564591 A CA 002564591A CA 2564591 A CA2564591 A CA 2564591A CA 2564591 A1 CA2564591 A1 CA 2564591A1
Authority
CA
Canada
Prior art keywords
silicon
unitary body
particulate product
particles
porous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002564591A
Other languages
English (en)
Inventor
Roghieh Saffie
Keith Gordon Barraclough
Chi Hian Lau
Nassim Torabi-Pour
Leigh Trevor Canham
Armando Loni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Psimedica Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2564591A1 publication Critical patent/CA2564591A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Silicon Compounds (AREA)
CA002564591A 2004-05-21 2005-05-18 Structure de silicium Abandoned CA2564591A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0411358A GB2414231A (en) 2004-05-21 2004-05-21 Porous silicon
GB0411358.5 2004-05-21
PCT/GB2005/001910 WO2005113467A1 (fr) 2004-05-21 2005-05-18 Structure de silicium

Publications (1)

Publication Number Publication Date
CA2564591A1 true CA2564591A1 (fr) 2005-12-01

Family

ID=32607728

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002564591A Abandoned CA2564591A1 (fr) 2004-05-21 2005-05-18 Structure de silicium

Country Status (5)

Country Link
EP (1) EP1747180A1 (fr)
JP (1) JP2007537965A (fr)
CA (1) CA2564591A1 (fr)
GB (1) GB2414231A (fr)
WO (1) WO2005113467A1 (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0601319D0 (en) 2006-01-23 2006-03-01 Imp Innovations Ltd A method of fabricating pillars composed of silicon-based material
FR2915742B1 (fr) * 2007-05-04 2014-02-07 Centre Nat Rech Scient Procede pour la fourniture du dihydrogene a partir de silicium hydrogene
GB0709165D0 (en) 2007-05-11 2007-06-20 Nexeon Ltd A silicon anode for a rechargeable battery
GB0713898D0 (en) 2007-07-17 2007-08-29 Nexeon Ltd A method of fabricating structured particles composed of silcon or a silicon-based material and their use in lithium rechargeable batteries
GB0713895D0 (en) 2007-07-17 2007-08-29 Nexeon Ltd Production
GB0713896D0 (en) 2007-07-17 2007-08-29 Nexeon Ltd Method
GB2464158B (en) 2008-10-10 2011-04-20 Nexeon Ltd A method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
GB2464157B (en) 2008-10-10 2010-09-01 Nexeon Ltd A method of fabricating structured particles composed of silicon or a silicon-based material
GB2470056B (en) 2009-05-07 2013-09-11 Nexeon Ltd A method of making silicon anode material for rechargeable cells
GB2470190B (en) 2009-05-11 2011-07-13 Nexeon Ltd A binder for lithium ion rechargeable battery cells
US9853292B2 (en) 2009-05-11 2017-12-26 Nexeon Limited Electrode composition for a secondary battery cell
GB201005979D0 (en) 2010-04-09 2010-05-26 Nexeon Ltd A method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
GB201009519D0 (en) 2010-06-07 2010-07-21 Nexeon Ltd An additive for lithium ion rechargeable battery cells
GB201014707D0 (en) 2010-09-03 2010-10-20 Nexeon Ltd Electroactive material
GB201014706D0 (en) * 2010-09-03 2010-10-20 Nexeon Ltd Porous electroactive material
WO2012109459A1 (fr) * 2011-02-09 2012-08-16 Hariharan Alleppey V Récupération de valeur de silicium dans des rebuts de coupe de silicium
GB2529409A (en) * 2014-08-18 2016-02-24 Nexeon Ltd Electroactive materials for metal-ion batteries
US10882751B2 (en) 2015-09-29 2021-01-05 C-Crete Technologies, Llc Calcium-silicate-based porous particles, composition, method of making and use thereof
FR3075826B1 (fr) * 2017-12-22 2019-12-20 Nanomakers Procede de fabrication incorporant des particules a base de silicium
JP2021042112A (ja) * 2019-09-13 2021-03-18 株式会社トクヤマ 精製シリコン微粒子の製造方法
JP7464254B2 (ja) * 2020-02-26 2024-04-09 国立大学法人広島大学 金属材料及び水素の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4040848A (en) * 1976-01-06 1977-08-09 General Electric Company Polycrystalline silicon articles containing boron by sintering
DE3236276A1 (de) * 1982-09-30 1984-04-05 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Neuer werkstoff aus silicium und verfahren zu seiner herstellung
DE3518829A1 (de) * 1985-05-24 1986-11-27 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung von formkoerpern aus siliciumgranulat fuer die erzeugung von siliciumschmelzen
DE3613778A1 (de) * 1986-04-23 1987-10-29 Heliotronic Gmbh Verfahren zur herstellung von formkoerpern aus granulat auf der basis von silicium, germanium oder mischkristallen dieser elemente
JPH01100010A (ja) * 1987-10-14 1989-04-18 Canon Inc 非晶質水素化シリコン微粒子膜及びその製造方法
JP3259247B2 (ja) * 1993-03-11 2002-02-25 理化学研究所 ポーラス・シリコンおよびその製造方法
JPH08109012A (ja) * 1994-10-11 1996-04-30 Tonen Corp 多結晶シリコン板の製造方法
GB9611437D0 (en) * 1995-08-03 1996-08-07 Secr Defence Biomaterial
JPH11314911A (ja) * 1998-05-07 1999-11-16 Sumitomo Sitix Amagasaki:Kk 多結晶シリコンインゴットの製造方法
GB2363115A (en) * 2000-06-10 2001-12-12 Secr Defence Porous or polycrystalline silicon orthopaedic implants
GB0212667D0 (en) * 2002-05-31 2002-07-10 Psimedica Ltd Orthopaedic scaffolds for tissue engineering
JP4608654B2 (ja) * 2002-06-18 2011-01-12 財団法人新産業創造研究機構 一重項酸素発生光増感剤及びそれを用いた一重項酸素発生方法
FR2858313B1 (fr) * 2003-07-28 2005-12-16 Centre Nat Rech Scient Reservoir d'hydrogene a base de nano-structures de silicium

Also Published As

Publication number Publication date
WO2005113467A1 (fr) 2005-12-01
EP1747180A1 (fr) 2007-01-31
GB0411358D0 (en) 2004-06-23
JP2007537965A (ja) 2007-12-27
GB2414231A (en) 2005-11-23

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Legal Events

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