CA2529794A1 - Procede et dispositif de production de plasma, et circuit d'attaque rf a facteur d'utilisation ajustable - Google Patents

Procede et dispositif de production de plasma, et circuit d'attaque rf a facteur d'utilisation ajustable Download PDF

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Publication number
CA2529794A1
CA2529794A1 CA002529794A CA2529794A CA2529794A1 CA 2529794 A1 CA2529794 A1 CA 2529794A1 CA 002529794 A CA002529794 A CA 002529794A CA 2529794 A CA2529794 A CA 2529794A CA 2529794 A1 CA2529794 A1 CA 2529794A1
Authority
CA
Canada
Prior art keywords
plasma
reactance
expected
impedance
radio frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002529794A
Other languages
English (en)
Inventor
Patrick Pribyl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plasma Control Systems LLC
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2529794A1 publication Critical patent/CA2529794A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H05H1/36—Circuit arrangements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/26—Supports; Mounting means by structural association with other equipment or articles with electric discharge tube
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B31/00—Electric arc lamps
    • H05B31/02—Details
    • H05B31/26—Influencing the shape of arc discharge by gas blowing devices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

L'invention concerne un circuit réactif en tant que partie d'un procédé et d'un système de génération de plasma à densité élevée qui ne requiert pas l'utilisation d'un réseau d'adaptation dynamique visant à exciter directement un plasma présentant une impédance dynamique. Ce réseau réactif est conçu pour engendrer une petite réactance totale, lorsque la réactance du plasma est au niveau d'une première réactance de plasma et présente une réactance qui ne dépasse pas une limite spécifiée au niveau d'une seconde réactance de plasma. Les première et seconde réactances de plasma couvrent une fraction d'une portée de réactance de plasma dynamique attendue. Les valeurs des première et seconde réactances de plasma peuvent, par exemple, correspondre respectivement à une limite de réactance de plasma prévue élevée et une limite de réactance plasma prévue basse ou la première réactance de plasma peut correspondre à une réactance de plasma prévue moyenne.
CA002529794A 2003-06-19 2004-06-21 Procede et dispositif de production de plasma, et circuit d'attaque rf a facteur d'utilisation ajustable Abandoned CA2529794A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US48033803P 2003-06-19 2003-06-19
US60/480,338 2003-06-19
PCT/US2004/019931 WO2004114461A2 (fr) 2003-06-19 2004-06-21 Procede et dispositif de production de plasma, et circuit d'attaque rf a facteur d'utilisation ajustable

Publications (1)

Publication Number Publication Date
CA2529794A1 true CA2529794A1 (fr) 2004-12-29

Family

ID=33539287

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002529794A Abandoned CA2529794A1 (fr) 2003-06-19 2004-06-21 Procede et dispositif de production de plasma, et circuit d'attaque rf a facteur d'utilisation ajustable

Country Status (6)

Country Link
EP (1) EP1689907A4 (fr)
JP (1) JP2007524963A (fr)
KR (1) KR20060029621A (fr)
CN (1) CN1871373A (fr)
CA (1) CA2529794A1 (fr)
WO (1) WO2004114461A2 (fr)

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JP4773165B2 (ja) * 2005-08-31 2011-09-14 株式会社ダイヘン 高周波電源装置
CN100411496C (zh) * 2005-09-21 2008-08-13 大连理工大学 一种实现脉冲电源与等离子体负载间匹配的方法
JP5241578B2 (ja) * 2009-03-19 2013-07-17 株式会社日清製粉グループ本社 誘導熱プラズマ発生方法及び装置
US8741097B2 (en) 2009-10-27 2014-06-03 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US9313872B2 (en) 2009-10-27 2016-04-12 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
JP5694721B2 (ja) * 2009-10-27 2015-04-01 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5592098B2 (ja) 2009-10-27 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5957816B2 (ja) * 2011-02-23 2016-07-27 株式会社村田製作所 インピーダンス変換デバイス、アンテナ装置および通信端末装置
CN103456591B (zh) * 2012-05-31 2016-04-06 中微半导体设备(上海)有限公司 自动频率调谐源和偏置射频电源的电感耦合等离子处理室
JP6267989B2 (ja) * 2013-02-18 2018-01-24 東京エレクトロン株式会社 プラズマ処理方法及び容量結合型プラズマ処理装置
CN103311648B (zh) * 2013-06-18 2015-04-29 浙江大学 一种超宽带等离子发射天线装置
JP2016046391A (ja) * 2014-08-22 2016-04-04 株式会社アルバック プラズマエッチング装置
EP3322258A4 (fr) * 2015-07-03 2019-03-27 Toyo Seikan Group Holdings, Ltd. Dispositif de chauffage diélectrique à haute fréquence
CN105228330B (zh) * 2015-09-01 2018-09-14 沈阳拓荆科技有限公司 一种射频等离子体设备匹配器
US10211522B2 (en) 2016-07-26 2019-02-19 Smartsky Networks LLC Density and power controlled plasma antenna
US10734195B2 (en) * 2017-06-08 2020-08-04 Lam Research Corporation Systems and methods for transformer coupled plasma pulsing with transformer coupled capacitive tuning switching
US20190108976A1 (en) * 2017-10-11 2019-04-11 Advanced Energy Industries, Inc. Matched source impedance driving system and method of operating the same
TWI744566B (zh) 2017-11-17 2021-11-01 新加坡商Ａｅｓ全球公司 用於在空間域和時間域上控制基板上的電漿處理之系統和方法，及相關的電腦可讀取媒體
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
US10672590B2 (en) * 2018-03-14 2020-06-02 Lam Research Corporation Frequency tuning for a matchless plasma source
KR102381323B1 (ko) * 2020-05-15 2022-03-31 (주)엘오티씨이에스 유도결합 플라즈마 반응기 및 유도결합 플라즈마 반응기의 안테나 코일용 와이어 구조물
US20230245873A1 (en) * 2020-06-17 2023-08-03 Lam Research Corporation Protection System for Switches in Direct Drive Circuits of Substrate Processing Systems
WO2022173626A1 (fr) * 2021-02-09 2022-08-18 Advanced Energy Industries, Inc. Surveillance spatiale et commande d'environnements de traitement au plasma
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply

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JPH0773105B2 (ja) * 1987-02-16 1995-08-02 日電アネルバ株式会社 プラズマ処理装置
JP3283476B2 (ja) * 1989-09-22 2002-05-20 株式会社日立製作所 放電状態変動量モニタ
DE69304522T2 (de) * 1992-04-16 1997-01-23 Advanced Energy Ind Inc Stabilisator fuer schalt-mode geleistet radio-frequenz plasma einrichtung
US5473291A (en) * 1994-11-16 1995-12-05 Brounley Associates, Inc. Solid state plasma chamber tuner
US6264812B1 (en) * 1995-11-15 2001-07-24 Applied Materials, Inc. Method and apparatus for generating a plasma
JP2884056B2 (ja) * 1995-12-07 1999-04-19 パール工業株式会社 放電プラズマ発生用高周波電源装置及び半導体製造装置
US5654679A (en) * 1996-06-13 1997-08-05 Rf Power Products, Inc. Apparatus for matching a variable load impedance with an RF power generator impedance
JP2001073149A (ja) * 1999-09-01 2001-03-21 Shimadzu Corp Ｅｃｒ成膜装置
JP2001332534A (ja) * 2000-05-25 2001-11-30 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
US6305316B1 (en) * 2000-07-20 2001-10-23 Axcelis Technologies, Inc. Integrated power oscillator RF source of plasma immersion ion implantation system
JP4711543B2 (ja) * 2001-05-22 2011-06-29 キヤノンアネルバ株式会社 放電を利用した処理装置における放電検出の方法と装置
US7132996B2 (en) * 2001-10-09 2006-11-07 Plasma Control Systems Llc Plasma production device and method and RF driver circuit
JP3574104B2 (ja) * 2001-11-27 2004-10-06 三容真空工業株式会社 プラズマ発生のためのマッチング回路を利用したプラズマ発生駆動装置

Also Published As

Publication number Publication date
CN1871373A (zh) 2006-11-29
EP1689907A4 (fr) 2008-07-23
KR20060029621A (ko) 2006-04-06
WO2004114461A3 (fr) 2006-07-06
WO2004114461A2 (fr) 2004-12-29
JP2007524963A (ja) 2007-08-30
EP1689907A2 (fr) 2006-08-16

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Legal Events

Date Code Title Description
EEER Examination request
FZDE Discontinued
FZDE Discontinued

Effective date: 20110621