CA2521145A1 - Circuit de pixels pour detection de rayonnement - Google Patents

Circuit de pixels pour detection de rayonnement Download PDF

Info

Publication number
CA2521145A1
CA2521145A1 CA002521145A CA2521145A CA2521145A1 CA 2521145 A1 CA2521145 A1 CA 2521145A1 CA 002521145 A CA002521145 A CA 002521145A CA 2521145 A CA2521145 A CA 2521145A CA 2521145 A1 CA2521145 A1 CA 2521145A1
Authority
CA
Canada
Prior art keywords
pixel
voltage
tamp
circuit
tft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002521145A
Other languages
English (en)
Inventor
Arokia Nathan
Nader Safavian
Reza G. Chaji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CA002521145A priority Critical patent/CA2521145A1/fr
Publication of CA2521145A1 publication Critical patent/CA2521145A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44Electric circuits
    • G01J1/46Electric circuits using a capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14609Pixel-elements with integrated switching, control, storage or amplification elements
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/04Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Measurement Of Radiation (AREA)
CA002521145A 2005-10-11 2005-10-11 Circuit de pixels pour detection de rayonnement Abandoned CA2521145A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA002521145A CA2521145A1 (fr) 2005-10-11 2005-10-11 Circuit de pixels pour detection de rayonnement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA002521145A CA2521145A1 (fr) 2005-10-11 2005-10-11 Circuit de pixels pour detection de rayonnement

Publications (1)

Publication Number Publication Date
CA2521145A1 true CA2521145A1 (fr) 2007-04-11

Family

ID=37913440

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002521145A Abandoned CA2521145A1 (fr) 2005-10-11 2005-10-11 Circuit de pixels pour detection de rayonnement

Country Status (1)

Country Link
CA (1) CA2521145A1 (fr)

Similar Documents

Publication Publication Date Title
US8642970B2 (en) Radiographic image detecting apparatus and radiographic image capturing system
US7002157B2 (en) Image pick-up apparatus and image pick-up system
CA2585375C (fr) Systeme d'imagerie numerique a gain eleve
JP5458260B2 (ja) 直接型x線変換に基づく積分検出器に関する漏れ電流及び残留信号の補償
CN103297716B (zh) 图像拾取单元和图像拾取显示系统
KR102065807B1 (ko) 디지털 방사선 촬영 검출기들을 위한 전하 주입 보상
CN101584203A (zh) 用于多帧获取的成像阵列
US9500752B2 (en) Pixel architecture for imaging devices
JP6483150B2 (ja) 放射線検出器
CN106067951A (zh) 图像传感器
JP2014216794A (ja) 放射線撮像装置及び放射線検査装置
US20210014432A1 (en) Image sensor and imaging system comprising the same
JP2001285724A (ja) 電荷量検出回路
Taghibakhsh et al. Two-transistor active pixel sensor readout circuits in amorphous silicon technology for high-resolution digital imaging applications
CA2497465A1 (fr) Circuit a pixels pour la detection de rayonnement
CA2521145A1 (fr) Circuit de pixels pour detection de rayonnement
JP2013510423A (ja) 電磁放射線を検出する検出器ユニット
US8785872B1 (en) Imaging method and system
CA2525510A1 (fr) Circuit a pixels pour detecteurs de rayonnement
Safavian et al. Investigation of gain non-uniformities in the two TFT current programmed amorphous silicon active pixel sensor for fluoroscopy, chest radiography, and mammography tomosynthesis applications
Rankov et al. A novel correlated double sampling poly-Si circuit for readout systems in large area X-ray sensors
Safavian et al. Characterization of current programmed amorphous silicon active pixel sensor readout circuit for dual mode diagnostic digital x-ray imaging
Wu Noise Analysis and Measurement for Current Mode and Voltage Mode Active Pixel Sensor Readout Methods
Taghibakhsh et al. Amplified pixel sensor architectures for low dose computed tomography using silicon thin film technology
Safavian Current Programmed Active Pixel Sensors for Large Area Diagnostic X-ray Imaging

Legal Events

Date Code Title Description
FZDE Dead