CA2422572A1 - Dispositif d'isolation entre des zones a conduction optique - Google Patents

Dispositif d'isolation entre des zones a conduction optique Download PDF

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Publication number
CA2422572A1
CA2422572A1 CA002422572A CA2422572A CA2422572A1 CA 2422572 A1 CA2422572 A1 CA 2422572A1 CA 002422572 A CA002422572 A CA 002422572A CA 2422572 A CA2422572 A CA 2422572A CA 2422572 A1 CA2422572 A1 CA 2422572A1
Authority
CA
Canada
Prior art keywords
elongate
regions
optically conductive
region
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002422572A
Other languages
English (en)
Inventor
Andrew Alan House
George Frederick Hopper
Ian Edward Day
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumentum Technology UK Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0023133A external-priority patent/GB2367187B/en
Application filed by Individual filed Critical Individual
Publication of CA2422572A1 publication Critical patent/CA2422572A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12126—Light absorber
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4246—Bidirectionally operating package structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

L'invention concerne un dispositif d'isolation con×u pour fournir une isolation optique et ~lectrique entre des zones ~ conduction optique (1A, 1B), telles que des guides d'ondes parall­les d'une puce optique int~gr~e. Ce dispositif comprend une premi­re r~gion allong~e (4) dop~e au moyen d'un premier dopant (p+), une deuxi­me r~gion allong~e (5) sur un cÙt~ de la premi­re r~gion allong~e (4) et une troisi­me r~gion allong~e (6) sur le cÙt~ oppos~ de la premi­re r~gion allong~e (4), la deuxi­me et la troisi­me r~gion allong~e (5, 6) ~tant dop~es au moyen d'un second dopant (n+) de polarit~ oppos~e ~ celle du premier dopant (p+). Une premi­re diode est form~e entre la deuxi­me et la premi­re r~gion allong~e (5, 4) et une seconde diode est form~e entre la premi­re et la troisi­me r~gion allong~e (4, 6), la premi­re et la seconde diode ~tant connect~es en s~rie avec une polarit~ oppos~e. Les diodes oppos~es bloquent le passage du courant ~lectrique et les r~gions dop~es (4, 5, 6) absorbent la lumi­re essayant de passer ~ travers.
CA002422572A 2000-09-21 2001-09-20 Dispositif d'isolation entre des zones a conduction optique Abandoned CA2422572A1 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
GB0023133A GB2367187B (en) 2000-09-21 2000-09-21 An isolation device
GB0023133.2 2000-09-21
US09/850,060 US6628852B2 (en) 2000-09-21 2001-05-08 Isolation device
US09/850,060 2001-05-08
PCT/GB2001/004191 WO2002025334A1 (fr) 2000-09-21 2001-09-20 Dispositif d'isolation entre des zones a conduction optique

Publications (1)

Publication Number Publication Date
CA2422572A1 true CA2422572A1 (fr) 2002-03-28

Family

ID=26245033

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002422572A Abandoned CA2422572A1 (fr) 2000-09-21 2001-09-20 Dispositif d'isolation entre des zones a conduction optique

Country Status (5)

Country Link
EP (1) EP1319193A1 (fr)
CN (1) CN1461418A (fr)
AU (1) AU2001287900A1 (fr)
CA (1) CA2422572A1 (fr)
WO (1) WO2002025334A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102403321A (zh) * 2011-09-30 2012-04-04 上海新傲科技股份有限公司 半导体装置及制备方法
US9946023B2 (en) * 2015-08-05 2018-04-17 Huawei Technologies Co., Ltd. Optical attenuator and fabrication method thereof
CN107039070B (zh) 2016-01-29 2022-06-14 三星电子株式会社 用于选择性地执行隔离功能的半导体器件及其布局替代方法
CN114898791A (zh) 2016-01-29 2022-08-12 三星电子株式会社 用于选择性地执行隔离功能的半导体器件及其布局替代方法
US11442296B2 (en) 2020-07-20 2022-09-13 Taiwan Semiconductor Manufacturing Company Ltd. Waveguide structure and method for forming the same
US20240012199A1 (en) * 2022-07-08 2024-01-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and methods of formation

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL185118C (nl) * 1979-06-07 1990-01-16 Philips Nv Halfgeleiderschakelinrichting voor het geleiden en versterken van straling.
US4637125A (en) * 1983-09-22 1987-01-20 Kabushiki Kaisha Toshiba Method for making a semiconductor integrated device including bipolar transistor and CMOS transistor
FR2710455B1 (fr) * 1993-09-24 1995-12-15 Frederic Ghirardi Procédé de réalisation d'une structure intégrée monolithique incorporant des composants opto-électroniques et structure ainsi réalisée.
EP0955681A3 (fr) * 1994-09-28 2000-11-29 Nippon Telegraph And Telephone Corporation Dispositif optique à semi-conducteur et méthode de fabrication
JPH08116135A (ja) * 1994-10-17 1996-05-07 Mitsubishi Electric Corp 導波路集積素子の製造方法，及び導波路集積素子

Also Published As

Publication number Publication date
AU2001287900A1 (en) 2002-04-02
WO2002025334B1 (fr) 2002-07-04
WO2002025334A1 (fr) 2002-03-28
EP1319193A1 (fr) 2003-06-18
CN1461418A (zh) 2003-12-10

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Legal Events

Date Code Title Description
FZDE Discontinued