CA2286774A1 - Laser device - Google Patents
Laser device Download PDFInfo
- Publication number
- CA2286774A1 CA2286774A1 CA002286774A CA2286774A CA2286774A1 CA 2286774 A1 CA2286774 A1 CA 2286774A1 CA 002286774 A CA002286774 A CA 002286774A CA 2286774 A CA2286774 A CA 2286774A CA 2286774 A1 CA2286774 A1 CA 2286774A1
- Authority
- CA
- Canada
- Prior art keywords
- laser
- laser diodes
- mode
- laser device
- diodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06233—Controlling other output parameters than intensity or frequency
- H01S5/0624—Controlling other output parameters than intensity or frequency controlling the near- or far field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
- Lasers (AREA)
- Radiation-Therapy Devices (AREA)
Abstract
The invention relates to a laser device with at least one laser diode array with a plurality of adjacently arranged laser diodes. The laser device has an external resonator for coupling the modes of the individual laser diodes.
Description
kCV BY = l O- 15-99 : ~ U : U~'_1~1 : ~ 51-9251 101 SA9ART X~ B I GGAK : # 2 c~. H'? ~ 1.~~5 p I=iLE, P~l-fP~ THiS AMENDED
.wT; ~J ga; o~, ~~~3 TRANSLATION
Ri~''E~I~:Eb ~$EE'a Descrip~ior~.
La;ef device '='a invrent,~,or~ relates t~~ a laser dev,~c~e :~aT~~nc at _east one li=iear array cf !.aser diodes .
Laser diode z.r_rays are, for exøir;ple, K~owri f=om R.. ra;~l, ~Jpto~le~Yrp~u,:. Ser'u~~onduct~~_- Com.po:.ien4s. '~eubn.ez_ ~tla~~~x SiCr'2'~tE=:'.,, ~-,.~ t?O.r~..~.0~1., G. a. Te'a~I:2~ Stll''t;~ar~
:l~~~i, paged 2 ~: , ',? C ~; . S-~ch laser- d.ode az rGyS ac:~lieve h-~ fh radio.
ticn pc.~we~s, :xigi-: r:wd~.a=ica dews~fiies and ef=ir~ienc,~es.
~'_>_ xnary applic.at_ons, fcr exarvple fox ,w~ateriai:3 prc~ces.sing or for prir.ver apa:.a.ca~ions, powers of 10 'n7-1G k~r a4 pv~ae,r dta:r.si.ties be~'h~een 0. 1 and 10 T~zw/c~.2 are needed o the artiole t~o b~ °~poe~.~. ~n order to ~.ee~ these reqW cements, sGlid-stat~ lasers ;e.g. hd:'1AG, efv, ) aze cu_wer.tiy preferably ~,-:sedG 5'acn twcv-stare SysLe~S, ~,ahiGh reed =o ~e optically p1'~h'.p~u '~5w.rg ~l~S~ ~32T.~:;~ :.~r semicord~cwo= laSe~B, drE
teGi:~j~_c~A~cg_cal_y el aborate and achp_eve corversior efficiencies ~~F cz~ly c =c, 15~. Further, lamp-ptA~p~ed sy5~er~as require a great dea-~ ;~f mai~te~arce.
h=tn,~ugh diode lasers achieve the z-eu.uzsir_e pcGVer aensiti.es, t:re rttaximum p~,wer ixl a sr~atiC.l'.~y ccherent mode As never:.heless Orllyl'J.2 irJ Or, .ir. ~p_...L~)_r~a;,.lrJTi W-i~}'1 sEmiCOridL:~~:W
axCl~il'_flers r d.b t? t y. trl7 .
RC4' L3Y _, _ _ _ _ _ _ _ _ _ . __ _ 1 (i_ 15-99 : 1 Q : 0~~All1 ~ __. .. ._.
. ._ ~~'4~= i l -~ (1.1~ W1_flfv'(' & y3I GEAR : ~ :3 Kxlow 1 user devices zaith a re5~~x~.a~or are aesc;~'Abed ir: ~5-A-4~5?~.?gl and EP-;: .c3 323.
T~:~e ~k~~ect of the pr.eseT.t i:we~zticn is t~~erefore to dei>elcp a lace device vaitil ~n~hich. an increaseci rraxi~r4aa power ca:~. be aczi ved v; r: a spa~iaily cc~~erent ~ncd.e.
Th~.s~ object is a::r_e ed by a ~,aser device accordinG ~.~, ,._ a i ~, 1.
Ir_ t~zs laser device, decoupled laser d=~od?s Gnrefexacl,~
sir:y e-mcde laser diodes , ~n:ic~~ are ver~J stable, are I
ad.va~tag'evusiy used.
Furt~e~,, it -s particularly adva:atageous if t.ha pa°si°ue p-~a:~ax wacra~r~:ide stru;:Yure cap: '~e ,~rociucea mcnolithical-~ y on a single rlcula~ing surface (rrahich car. be cccled during ope_rat=cn) , b~~
r:~eaz:~ :~i wrier: ~:oth hi.':~ aW gnmer:t accuracy and alsJ - in part~c~a?ar because of the uniform temperaure d'_sfi,-~bution aT~
___ the ~empezature s~ab;~lity - high stability of the wa~reguides c.ai~ ;~e achie~red.
Tn~e ~avegu_de structure -_s prefQrably produced in a planar uyi~r d waveguide tech:~clogy te. y . SiC~ en ~i, diffused, icn~
exc.h need, prec~_p~ tatea .;lass; .
For urther cpt_r,~ization, p'_ar:a.r ,wer.ses a::d greting structures :nay .e a~7plied tc the maur_ti::g surface in straichtforc~ls,r~a _°aS,"~ on in aGidJ.t=C~. t0 the wa~rea~~iCie 5t-r'uG~;~~re.
Ad'ra~~g~O~.IS ~e'~lrien,ert5 4f tk'~e ~3.52'y de~.rice ~onStZt;~ue the sub c~ matter of the subclair.~s.
RCS Bf:, , ___ __ __.___ 1()-15-~:3 :1l):Ua3.q41 ~ __...._..
_~'~':>4.3'2p1'107-> S;49RRT &,131GG~1R:~ 4 In a~ part-~ct~.l~,rly p'~eferred mxbodimer,t cf yhe laser d.ev~.,~e, the aser dzode ax'ray has sv~n~l~~-;node ia.ser :~i~des and an :~pti ~al de~T:.ce with brancred wa;regvides vs prPtr'~.ued. _aaer _ad~_~tion of th.e ir_di~ridual laser diod~acan ne coup~.ed into t~.e utter. Tre opt'-Ca''A arrangement co~~bines laser- radiation.
;:f tye ir:~di~Tidual ,_aser diodes, arary4d next to ozle ar_ot.r.er, i~zto a runner s:~al ler char, t~~e nu~i:~eL of laser diodes, ~ r.
part~cv'_ar,~y into a single cutyat ,~~avegv.~:.de.
r__ mother p..artiYu~~a.rJ..w~ pie=erred e:abodimen-, t~~.e laser diode arra~ ,gas mulYimr~~de -_a.ser di;,de3, in pa.rticuJ_ar ~~aide-stride '_ase d~odes, and 1 ikewise an apt-ca'w cie~r'~ce with k;ranched wave~,uides, x:vto ~n~h =c': laser radiarior. ef ~h.e individual laser d.iod~s can be t~ou~led arid va~:icn~ cernb=ries this :.aser =ad_at~.on.
==-:to i a s~',aliei n'smber than ~'~.e _~_ur.,bex~ of laser dzc~des, part :.~ular int~ a single cutp;~t w;~ve~uide. The single-zncde nra ve aides have, a- the ends facing tYie laser diode array, ~a~.~e~ str~:ctures whw«h. transfer t:~e laser_ radio~icn cf the wndi~~i;~t~a'~ la4er d~_ades as adiabata.ca__l~r a'~ possible i nto .'i.e resp Ictively al lccate~.: s:~ngle-:~~ode v:aveHuide. Arra;~s of mu~.t ~nede wide-stripe '_asers adUar;ta~~'eous_y aJ.J_ow very hint s~.mf.~.ce newer de:~sw ties .
Ire b~tl: of t=.e cases fi.entioned aocve,- the cptica.l device i:as a pref~ra,;o'~y binary tree-like branch structure. It i;, txowever, also ncssible to -ase an~~ ether sT:.l b~~a:~oh strut~tuxe.
Tr_ a ~furtY~~er preferred refinement ~,f ire lasar cie;~Ace, the outp~t ~~aveg~,zide o= ~Na~reg~,z.J_des eras cr ~.ave in addition a DFB
('-~~Sl~rl.b~:teC'~ F22d'lJaCk) gratiJl~x struCT~'..:rE? fOY' iOnCf=thdll''AC'~~! ?TlOde ae~.eq Lion.
'ire ~nve=aion describe: a~u~.~e .allows production va2~.i~~h is ~ornp c~ and, in parti.cr:=ar, favc;rable in terms of c.~ae,~ing ._ .j _ RCV 13Y_ _ , ___ __ __ .___1() ~25-'~a :1(>:0:3A~1 : 9,4!3'?01107.-> SwIAhT t~
B1GGAR:# p _ _ _ _ . _ _ __. .. ._. . _ _. .__. .__. . _. . . __ _ _ tec'~yo'~c~gy, ct power =aser d~_odes wi ~h spatially ar.d te:np~xal~.yi ccherer_t outp',;~t and therefore ma.:imai power .-?er_s~r.=.Fs, for Fxaznple for materials pr:~cessir.g, pr=~ter to ch ~ logy and. medical ap~:_~ icatiors . The planar or~twcal .peso a.tar couples ~:~e am=scion, c~f the :.n~.wvidual emitters tlas r d-'~c~..es) coheren.t~!y into a sinnle-mode ~;aveguide at th_a cuCp't of rye resonator.
A''1 a~~vantageous e~~bodimerit Uf the =nvet~tion is represented in ~igule 7. Refirermr_ts c~f the laser device will ~~e e~;plained in more~deta.:~a ;nri~h refex'°n~:e to Fi ores ~ t.n ~ i.~
'~ ~- . n ~w:a~ch:
Fir-a~e i si:ows a schematic =epresentati~~r_ :.f a laser diode I
axray ~n an a}ite-nal reson~.~or, ..'_g~;ie ~ shows a sche:rati,~ representation of a lace= d~_ode i a=rah in a:~ exterz:al resonator wa.tka a mode-~i~~.-eying devi~r.e, F'igu~e 3 shows a schemar~.c: representatzor. of a laser dEVice, ~ig~zzte 4 shows a sc~~~er.!atic representation: of a laser d.ev~co, Flc~u~e 5 st'!O'~,'.~ ~ ~Ch~Ii~.at~C ~'2p~2SBI1=3TiGT ~;f a laser d2viGe, c~.gu~e 6 shows a schematic .~epxesentatior. of a 'user de;Tice, pir~~~e ? shows a sc'~~ez;,~.at;_c =epreseratatien ~f a laser de-ice a~co~ding to ar: i1_.ustrat_ve errbodimer~t of I=.-re in~.,entior_.
I~: t_ a fi.~,ares, parts Nyic~ ara ~_ze sa:r~e cr havE t~~e sarr,e e'fte~t are alT~aays give:, the carve refezences.
Iz~_ ~re arrargezren t of figure 1, a laser diode arra~l l, for s ~itl~ '.rJi.
exarn ale & power ~ ; ~dl:c~~__ '_35er ~iicde arra_7, c~W~~G:-: ,~5 RCL 1'sY _. _ _. _ _ _ _ _ . _ _ _ _ . _ _ _ 1 ~o-_L 'w'i'g : 1 O : y;AM : __.
.. ._. . _ '1~~ Eo? 1 1.01- Sh1AR'r & , B t GGAR : # 6 r:rov~~'ed On ~n~.y cT:.e _resor_atC~x side with a resonator _nirrc~
-a~'el~, is arranged ir_ a: external optical reso.aatar. T~r~e ex-e~nal opti~~a'- reson at..~.Y rc.ay be produced it free-radz,atior_ tec.h~aioav or in p~axar wavegua.de tech nology, and may .~pti~r~aliy ce pr,~~.rided wi th a prAase plate for correcting the x,ras~ fronts. ' In t~e arrazger::er_t of Fig-are 2, t:r~.e external op~ical rescz~zatar is p~ovi3ed, for mote selectio.°i, with a m.~de diaphragm (for ex~;,r" ~e a .sing' e-znccie fiber', which ~r.a~~ be proG'.~ced either in t:~e peso: ator or in connection w,_th a resonator ~r,irrcr.
Acco~d,_ng .c :'figure 3, a sir_g1e-mace ~~aser dude array 1 is ccup~ed -_n a pas,swve sirgie-mode ~t~a.veguide plate 2. the sirg~e-uicde wwreguide plate :~.as a passive planar sit:gle-r.~ode waz~e~uide branc'~ strucrure 6 in tre ~orm cf a binar~~ branch Free ~of single-mode wavegW des ?, ;~hich, starting fron a si nc a o-a~.yu'.: wat~eg~aide 4, spa its In ;'.he dire.~tir,z~ oz tte -ase~ dlG~6' array 1 ir_to ,~ ~,~"~~e,r of single-mode wave guides 7 ~~~~a.c~. correspomds to ~~_e _iurvber of indivi ".a'- laser diodes c.f the ~aspr diode array 1. Here, the laser JJe~,Illu cf the i.nai~~idual laser diodes, arranged = ext t~ owe a~xot~:er, of the las~:~ diode array ~, are coherently ca'ap:~ed -oy means of a pl-ar~'_i~.y of binary ~rancres 3 ~.nto a. single output watecuide 4. I
lr. F~gvare 4. a mvltin.ode laser diode array 1 is likewi se cou~a~ed to a passi'.re single-mode w°°a~,regride prate 2 ~-~aving a z~as°~ve planar sir_gle-mode wa~reguide braucr~ structure 6 which, _:~ p~inCiple, correspo:rds to that of Fi gura 3 . the sirxgle-~r.ode I
,..~a~Je~'u.~_des each have, r_owever, at their ends faci:~g the laser diced array ~a, a +~aper structure 5 wrio.h '~ransfers the ernitted lase radiat:_on of tre respect'_ve-m°y associated individuaw lace diode _:~tc the sz.rgle-mode waveguide % assi~~ried thereto.
RCV BY:, _ , _ __ _ __ __.__- lu-_15-9~) :1~):Oa3,W1 : 954:3.>5L101 % S~1ART
t~ >SIGG_AR:# 7 _ _. _ . _ _ _ __ . ._. ._ _. .__. .__. .... . . ._._ _ In ~ _e iwl'aStraCive errbod?merrt of F,~gt~xe 5r whic:r in principle c~az;~ spond.s to the ~ili:.5r=ative em~cdin'.en. o~ Figure y a 7FB
Brat ~ng ,tructwre v_s add--tiox:ally arra~gec or: the outp~:r ware ui,de 4, b~ rucaris o' wrt-~~~h single-mode c,perafi_ior~ :~s a~i~.i~v ed .
Tr_. ~~G~lre H, the wa~~egui~.e5 additionally have phase sk'~Afters ~~ 0 a d the resora tox fur thermore coatair s at J, ease C~ne i abso~b ing medwam ~ 1 zcr !.ode sel?ctJ.._~.r_. These tw~:, CCmpon2zas, p~zas I a~aifter '_~ and abscrbi:~r~ medi~~,r~ :~~~., may be used entirely indeer_denT~~y cf cne another, so that it is seJ_e~~tivei Y
p5ss~~n~.e t~ pr~dUCe onl ~Yr ~-y .e o= bcth of _hese C-a~r>por_ents .
the ~J_J_ustrative em~~,:vdixne~~Y acccrdr_=g to the ir:~tention cf Fig~;~e - .'ms, for mode sele~::tion, c~~v°ved sir_g-~e-mode gave aides , which com.i~ine the laser ra,diatior: to a piura~ ,.tx°
cf o , as shYw;~ izz t:_a_ figure, to a s'iryie outp~it wa=aPgGi de 4.
i I
ir: C~der tc reduce C.ovp_v_ng ;.osses an~:~ ba:: k-~_ef;i_eo-tians ~>etw~ar_ the lineaw away _~f iassr diodes 1 and the nassiae -plan~.r w~aveg'aide strv:.ctvre 5, Y~.e wa~ve.gui des 7 andi ur the lase~ dioc.es r.'.ay be widened ~~y adia'~at,_ cc. ;-a:::ers and/or the wide.~ec: :.cupling ~aoCation is arranged ooiiquely with ~_espec=
~O t~'~.° Cpt~C~l 3X_v 4 f ~~".~ l~Ser ,~~~,'1G~: eS .
it1 ~ ~~l:Wtiler re ~ " S r t. , C ~Oi'ldtG_ '.1_..
p ter_ed '.~a a deL°i, w tile pt,-;~a'~ re I
a p~~.~sa riate or indis~idualiy aajustable planar-optica~~. phase i s_~y~' era Gn Che Single-:node wave~.~uiaes or the user diode.a fcx ccrr~cti.rlg phase frC:-,ts.
.wT; ~J ga; o~, ~~~3 TRANSLATION
Ri~''E~I~:Eb ~$EE'a Descrip~ior~.
La;ef device '='a invrent,~,or~ relates t~~ a laser dev,~c~e :~aT~~nc at _east one li=iear array cf !.aser diodes .
Laser diode z.r_rays are, for exøir;ple, K~owri f=om R.. ra;~l, ~Jpto~le~Yrp~u,:. Ser'u~~onduct~~_- Com.po:.ien4s. '~eubn.ez_ ~tla~~~x SiCr'2'~tE=:'.,, ~-,.~ t?O.r~..~.0~1., G. a. Te'a~I:2~ Stll''t;~ar~
:l~~~i, paged 2 ~: , ',? C ~; . S-~ch laser- d.ode az rGyS ac:~lieve h-~ fh radio.
ticn pc.~we~s, :xigi-: r:wd~.a=ica dews~fiies and ef=ir~ienc,~es.
~'_>_ xnary applic.at_ons, fcr exarvple fox ,w~ateriai:3 prc~ces.sing or for prir.ver apa:.a.ca~ions, powers of 10 'n7-1G k~r a4 pv~ae,r dta:r.si.ties be~'h~een 0. 1 and 10 T~zw/c~.2 are needed o the artiole t~o b~ °~poe~.~. ~n order to ~.ee~ these reqW cements, sGlid-stat~ lasers ;e.g. hd:'1AG, efv, ) aze cu_wer.tiy preferably ~,-:sedG 5'acn twcv-stare SysLe~S, ~,ahiGh reed =o ~e optically p1'~h'.p~u '~5w.rg ~l~S~ ~32T.~:;~ :.~r semicord~cwo= laSe~B, drE
teGi:~j~_c~A~cg_cal_y el aborate and achp_eve corversior efficiencies ~~F cz~ly c =c, 15~. Further, lamp-ptA~p~ed sy5~er~as require a great dea-~ ;~f mai~te~arce.
h=tn,~ugh diode lasers achieve the z-eu.uzsir_e pcGVer aensiti.es, t:re rttaximum p~,wer ixl a sr~atiC.l'.~y ccherent mode As never:.heless Orllyl'J.2 irJ Or, .ir. ~p_...L~)_r~a;,.lrJTi W-i~}'1 sEmiCOridL:~~:W
axCl~il'_flers r d.b t? t y. trl7 .
RC4' L3Y _, _ _ _ _ _ _ _ _ _ . __ _ 1 (i_ 15-99 : 1 Q : 0~~All1 ~ __. .. ._.
. ._ ~~'4~= i l -~ (1.1~ W1_flfv'(' & y3I GEAR : ~ :3 Kxlow 1 user devices zaith a re5~~x~.a~or are aesc;~'Abed ir: ~5-A-4~5?~.?gl and EP-;: .c3 323.
T~:~e ~k~~ect of the pr.eseT.t i:we~zticn is t~~erefore to dei>elcp a lace device vaitil ~n~hich. an increaseci rraxi~r4aa power ca:~. be aczi ved v; r: a spa~iaily cc~~erent ~ncd.e.
Th~.s~ object is a::r_e ed by a ~,aser device accordinG ~.~, ,._ a i ~, 1.
Ir_ t~zs laser device, decoupled laser d=~od?s Gnrefexacl,~
sir:y e-mcde laser diodes , ~n:ic~~ are ver~J stable, are I
ad.va~tag'evusiy used.
Furt~e~,, it -s particularly adva:atageous if t.ha pa°si°ue p-~a:~ax wacra~r~:ide stru;:Yure cap: '~e ,~rociucea mcnolithical-~ y on a single rlcula~ing surface (rrahich car. be cccled during ope_rat=cn) , b~~
r:~eaz:~ :~i wrier: ~:oth hi.':~ aW gnmer:t accuracy and alsJ - in part~c~a?ar because of the uniform temperaure d'_sfi,-~bution aT~
___ the ~empezature s~ab;~lity - high stability of the wa~reguides c.ai~ ;~e achie~red.
Tn~e ~avegu_de structure -_s prefQrably produced in a planar uyi~r d waveguide tech:~clogy te. y . SiC~ en ~i, diffused, icn~
exc.h need, prec~_p~ tatea .;lass; .
For urther cpt_r,~ization, p'_ar:a.r ,wer.ses a::d greting structures :nay .e a~7plied tc the maur_ti::g surface in straichtforc~ls,r~a _°aS,"~ on in aGidJ.t=C~. t0 the wa~rea~~iCie 5t-r'uG~;~~re.
Ad'ra~~g~O~.IS ~e'~lrien,ert5 4f tk'~e ~3.52'y de~.rice ~onStZt;~ue the sub c~ matter of the subclair.~s.
RCS Bf:, , ___ __ __.___ 1()-15-~:3 :1l):Ua3.q41 ~ __...._..
_~'~':>4.3'2p1'107-> S;49RRT &,131GG~1R:~ 4 In a~ part-~ct~.l~,rly p'~eferred mxbodimer,t cf yhe laser d.ev~.,~e, the aser dzode ax'ray has sv~n~l~~-;node ia.ser :~i~des and an :~pti ~al de~T:.ce with brancred wa;regvides vs prPtr'~.ued. _aaer _ad~_~tion of th.e ir_di~ridual laser diod~acan ne coup~.ed into t~.e utter. Tre opt'-Ca''A arrangement co~~bines laser- radiation.
;:f tye ir:~di~Tidual ,_aser diodes, arary4d next to ozle ar_ot.r.er, i~zto a runner s:~al ler char, t~~e nu~i:~eL of laser diodes, ~ r.
part~cv'_ar,~y into a single cutyat ,~~avegv.~:.de.
r__ mother p..artiYu~~a.rJ..w~ pie=erred e:abodimen-, t~~.e laser diode arra~ ,gas mulYimr~~de -_a.ser di;,de3, in pa.rticuJ_ar ~~aide-stride '_ase d~odes, and 1 ikewise an apt-ca'w cie~r'~ce with k;ranched wave~,uides, x:vto ~n~h =c': laser radiarior. ef ~h.e individual laser d.iod~s can be t~ou~led arid va~:icn~ cernb=ries this :.aser =ad_at~.on.
==-:to i a s~',aliei n'smber than ~'~.e _~_ur.,bex~ of laser dzc~des, part :.~ular int~ a single cutp;~t w;~ve~uide. The single-zncde nra ve aides have, a- the ends facing tYie laser diode array, ~a~.~e~ str~:ctures whw«h. transfer t:~e laser_ radio~icn cf the wndi~~i;~t~a'~ la4er d~_ades as adiabata.ca__l~r a'~ possible i nto .'i.e resp Ictively al lccate~.: s:~ngle-:~~ode v:aveHuide. Arra;~s of mu~.t ~nede wide-stripe '_asers adUar;ta~~'eous_y aJ.J_ow very hint s~.mf.~.ce newer de:~sw ties .
Ire b~tl: of t=.e cases fi.entioned aocve,- the cptica.l device i:as a pref~ra,;o'~y binary tree-like branch structure. It i;, txowever, also ncssible to -ase an~~ ether sT:.l b~~a:~oh strut~tuxe.
Tr_ a ~furtY~~er preferred refinement ~,f ire lasar cie;~Ace, the outp~t ~~aveg~,zide o= ~Na~reg~,z.J_des eras cr ~.ave in addition a DFB
('-~~Sl~rl.b~:teC'~ F22d'lJaCk) gratiJl~x struCT~'..:rE? fOY' iOnCf=thdll''AC'~~! ?TlOde ae~.eq Lion.
'ire ~nve=aion describe: a~u~.~e .allows production va2~.i~~h is ~ornp c~ and, in parti.cr:=ar, favc;rable in terms of c.~ae,~ing ._ .j _ RCV 13Y_ _ , ___ __ __ .___1() ~25-'~a :1(>:0:3A~1 : 9,4!3'?01107.-> SwIAhT t~
B1GGAR:# p _ _ _ _ . _ _ __. .. ._. . _ _. .__. .__. . _. . . __ _ _ tec'~yo'~c~gy, ct power =aser d~_odes wi ~h spatially ar.d te:np~xal~.yi ccherer_t outp',;~t and therefore ma.:imai power .-?er_s~r.=.Fs, for Fxaznple for materials pr:~cessir.g, pr=~ter to ch ~ logy and. medical ap~:_~ icatiors . The planar or~twcal .peso a.tar couples ~:~e am=scion, c~f the :.n~.wvidual emitters tlas r d-'~c~..es) coheren.t~!y into a sinnle-mode ~;aveguide at th_a cuCp't of rye resonator.
A''1 a~~vantageous e~~bodimerit Uf the =nvet~tion is represented in ~igule 7. Refirermr_ts c~f the laser device will ~~e e~;plained in more~deta.:~a ;nri~h refex'°n~:e to Fi ores ~ t.n ~ i.~
'~ ~- . n ~w:a~ch:
Fir-a~e i si:ows a schematic =epresentati~~r_ :.f a laser diode I
axray ~n an a}ite-nal reson~.~or, ..'_g~;ie ~ shows a sche:rati,~ representation of a lace= d~_ode i a=rah in a:~ exterz:al resonator wa.tka a mode-~i~~.-eying devi~r.e, F'igu~e 3 shows a schemar~.c: representatzor. of a laser dEVice, ~ig~zzte 4 shows a sc~~~er.!atic representation: of a laser d.ev~co, Flc~u~e 5 st'!O'~,'.~ ~ ~Ch~Ii~.at~C ~'2p~2SBI1=3TiGT ~;f a laser d2viGe, c~.gu~e 6 shows a schematic .~epxesentatior. of a 'user de;Tice, pir~~~e ? shows a sc'~~ez;,~.at;_c =epreseratatien ~f a laser de-ice a~co~ding to ar: i1_.ustrat_ve errbodimer~t of I=.-re in~.,entior_.
I~: t_ a fi.~,ares, parts Nyic~ ara ~_ze sa:r~e cr havE t~~e sarr,e e'fte~t are alT~aays give:, the carve refezences.
Iz~_ ~re arrargezren t of figure 1, a laser diode arra~l l, for s ~itl~ '.rJi.
exarn ale & power ~ ; ~dl:c~~__ '_35er ~iicde arra_7, c~W~~G:-: ,~5 RCL 1'sY _. _ _. _ _ _ _ _ . _ _ _ _ . _ _ _ 1 ~o-_L 'w'i'g : 1 O : y;AM : __.
.. ._. . _ '1~~ Eo? 1 1.01- Sh1AR'r & , B t GGAR : # 6 r:rov~~'ed On ~n~.y cT:.e _resor_atC~x side with a resonator _nirrc~
-a~'el~, is arranged ir_ a: external optical reso.aatar. T~r~e ex-e~nal opti~~a'- reson at..~.Y rc.ay be produced it free-radz,atior_ tec.h~aioav or in p~axar wavegua.de tech nology, and may .~pti~r~aliy ce pr,~~.rided wi th a prAase plate for correcting the x,ras~ fronts. ' In t~e arrazger::er_t of Fig-are 2, t:r~.e external op~ical rescz~zatar is p~ovi3ed, for mote selectio.°i, with a m.~de diaphragm (for ex~;,r" ~e a .sing' e-znccie fiber', which ~r.a~~ be proG'.~ced either in t:~e peso: ator or in connection w,_th a resonator ~r,irrcr.
Acco~d,_ng .c :'figure 3, a sir_g1e-mace ~~aser dude array 1 is ccup~ed -_n a pas,swve sirgie-mode ~t~a.veguide plate 2. the sirg~e-uicde wwreguide plate :~.as a passive planar sit:gle-r.~ode waz~e~uide branc'~ strucrure 6 in tre ~orm cf a binar~~ branch Free ~of single-mode wavegW des ?, ;~hich, starting fron a si nc a o-a~.yu'.: wat~eg~aide 4, spa its In ;'.he dire.~tir,z~ oz tte -ase~ dlG~6' array 1 ir_to ,~ ~,~"~~e,r of single-mode wave guides 7 ~~~~a.c~. correspomds to ~~_e _iurvber of indivi ".a'- laser diodes c.f the ~aspr diode array 1. Here, the laser JJe~,Illu cf the i.nai~~idual laser diodes, arranged = ext t~ owe a~xot~:er, of the las~:~ diode array ~, are coherently ca'ap:~ed -oy means of a pl-ar~'_i~.y of binary ~rancres 3 ~.nto a. single output watecuide 4. I
lr. F~gvare 4. a mvltin.ode laser diode array 1 is likewi se cou~a~ed to a passi'.re single-mode w°°a~,regride prate 2 ~-~aving a z~as°~ve planar sir_gle-mode wa~reguide braucr~ structure 6 which, _:~ p~inCiple, correspo:rds to that of Fi gura 3 . the sirxgle-~r.ode I
,..~a~Je~'u.~_des each have, r_owever, at their ends faci:~g the laser diced array ~a, a +~aper structure 5 wrio.h '~ransfers the ernitted lase radiat:_on of tre respect'_ve-m°y associated individuaw lace diode _:~tc the sz.rgle-mode waveguide % assi~~ried thereto.
RCV BY:, _ , _ __ _ __ __.__- lu-_15-9~) :1~):Oa3,W1 : 954:3.>5L101 % S~1ART
t~ >SIGG_AR:# 7 _ _. _ . _ _ _ __ . ._. ._ _. .__. .__. .... . . ._._ _ In ~ _e iwl'aStraCive errbod?merrt of F,~gt~xe 5r whic:r in principle c~az;~ spond.s to the ~ili:.5r=ative em~cdin'.en. o~ Figure y a 7FB
Brat ~ng ,tructwre v_s add--tiox:ally arra~gec or: the outp~:r ware ui,de 4, b~ rucaris o' wrt-~~~h single-mode c,perafi_ior~ :~s a~i~.i~v ed .
Tr_. ~~G~lre H, the wa~~egui~.e5 additionally have phase sk'~Afters ~~ 0 a d the resora tox fur thermore coatair s at J, ease C~ne i abso~b ing medwam ~ 1 zcr !.ode sel?ctJ.._~.r_. These tw~:, CCmpon2zas, p~zas I a~aifter '_~ and abscrbi:~r~ medi~~,r~ :~~~., may be used entirely indeer_denT~~y cf cne another, so that it is seJ_e~~tivei Y
p5ss~~n~.e t~ pr~dUCe onl ~Yr ~-y .e o= bcth of _hese C-a~r>por_ents .
the ~J_J_ustrative em~~,:vdixne~~Y acccrdr_=g to the ir:~tention cf Fig~;~e - .'ms, for mode sele~::tion, c~~v°ved sir_g-~e-mode gave aides , which com.i~ine the laser ra,diatior: to a piura~ ,.tx°
cf o , as shYw;~ izz t:_a_ figure, to a s'iryie outp~it wa=aPgGi de 4.
i I
ir: C~der tc reduce C.ovp_v_ng ;.osses an~:~ ba:: k-~_ef;i_eo-tians ~>etw~ar_ the lineaw away _~f iassr diodes 1 and the nassiae -plan~.r w~aveg'aide strv:.ctvre 5, Y~.e wa~ve.gui des 7 andi ur the lase~ dioc.es r.'.ay be widened ~~y adia'~at,_ cc. ;-a:::ers and/or the wide.~ec: :.cupling ~aoCation is arranged ooiiquely with ~_espec=
~O t~'~.° Cpt~C~l 3X_v 4 f ~~".~ l~Ser ,~~~,'1G~: eS .
it1 ~ ~~l:Wtiler re ~ " S r t. , C ~Oi'ldtG_ '.1_..
p ter_ed '.~a a deL°i, w tile pt,-;~a'~ re I
a p~~.~sa riate or indis~idualiy aajustable planar-optica~~. phase i s_~y~' era Gn Che Single-:node wave~.~uiaes or the user diode.a fcx ccrr~cti.rlg phase frC:-,ts.
Claims (11)
1. A laser device - having a linear array of laser diodes (1) which has a plurality of incoherent laser diodes arranged next to one another, and - having an external resonator, which has a passive planar waveguide structure (6) for coupling the modes of the individual laser diodes, the waveguide structure (6) comprising curved single-mode waveguides (7) for mode selection.
2. The laser device as claimed in claim 1, in which the laser diodes are single-mode laser diodes.
3. The laser device as claimed in claim 1 or 2, in which the passive planar waveguide structure (6) has branched single-mode waveguides (7), and into which structure laser radiation of the individual laser diodes can be coupled, said structure combining this laser radiation into a smaller number than the number of laser diodes, in particular into a single output waveguide (4).
4. The laser device as claimed in claim 1, in which the laser diodes are multimode laser diodes, in particular wide-stripe lasers.
5. The laser device as claimed in claim 1 or 4, in which the single-mode waveguides have, at the ends facing the linear array of laser diodes (1), taper structures (5) which transfer the laser radiation of the individual laser diodes into the respectively assigned single-mode waveguide (7).
6. The laser device as claimed in claim 3 or 5, in which the passive planar waveguide structure (6) has a binary branch tree.
7. The laser device as claimed in claim 3 or 5, in which the passive planar waveguide structure (6) has an N:1 branch.
8. The laser device as claimed in one of claim 3 or 5, to 8, in which the output waveguide or waveguide (4) has or have a DFB grating structure (9).
9. The laser device as claimed in one of claims 1 to 8, in which the linear array of laser diodes (1) has power semiconductor laser diodes.
10. The laser device as claimed in one of claims 1 to 9, in which the passive planar waveguide structure (6) is assigned at least one mode-selection device (11).
11. The laser device as claimed in claim 10, in which the mode-selection device (11) is an absorbing structure.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19716422.6 | 1997-04-18 | ||
| DE19716422 | 1997-04-18 | ||
| PCT/DE1998/001053 WO1998048495A2 (en) | 1997-04-18 | 1998-04-14 | Laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2286774A1 true CA2286774A1 (en) | 1998-10-29 |
Family
ID=7827025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002286774A Abandoned CA2286774A1 (en) | 1997-04-18 | 1998-04-14 | Laser device |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0976184A2 (en) |
| CN (1) | CN1252901A (en) |
| CA (1) | CA2286774A1 (en) |
| WO (1) | WO1998048495A2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10019826A1 (en) * | 2000-04-20 | 2001-10-31 | Infineon Technologies Ag | Laser array |
| US6580850B1 (en) | 2000-11-24 | 2003-06-17 | Applied Wdm, Inc. | Optical waveguide multimode to single mode transformer |
| US6668003B2 (en) * | 2002-02-12 | 2003-12-23 | Quintessence Photonics Corporation | Laser diode array with an in-phase output |
| DE102004038283B4 (en) * | 2004-08-03 | 2008-04-03 | Forschungsverbund Berlin E.V. | Optoelectronic element and method for the coherent coupling of active regions of optoelectronic elements |
| CN106454648B (en) * | 2016-07-15 | 2019-07-02 | 南京大学 | A kind of acoustic waveguide |
| CN106338800B (en) * | 2016-10-31 | 2018-06-12 | 华中科技大学 | It is a kind of to be used for optical fiber and the horizontal coupler of chip chamber optical signal transmission |
| JP7302430B2 (en) * | 2019-10-24 | 2023-07-04 | 富士通株式会社 | Wavelength tunable light source, optical transmission device using the same, and wavelength tunable light source control method |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4578791A (en) * | 1982-12-20 | 1986-03-25 | Trw Inc. | High-power injection laser diode structure |
| US4878724A (en) * | 1987-07-30 | 1989-11-07 | Trw Inc. | Electrooptically tunable phase-locked laser array |
| US5023882A (en) * | 1990-05-07 | 1991-06-11 | Xerox Corporation | Phased locked arrays with single lobe output beam |
| DE4123858C1 (en) * | 1991-07-18 | 1992-12-03 | Messerschmitt-Boelkow-Blohm Gmbh, 8012 Ottobrunn, De | Semiconductor laser array stabilising arrangement - provides fibre-shaped reflectors so that radiation characteristic extends as ray along X=axis |
| JPH07168040A (en) * | 1993-12-14 | 1995-07-04 | Nippon Steel Corp | Semiconductor laser converging apparatus |
| DE69526061D1 (en) * | 1994-12-22 | 2002-05-02 | Ceramoptec Gmbh | Laser system for high power densities |
| US5513196A (en) * | 1995-02-14 | 1996-04-30 | Deacon Research | Optical source with mode reshaping |
-
1998
- 1998-04-14 EP EP98931917A patent/EP0976184A2/en not_active Withdrawn
- 1998-04-14 CN CN 98804305 patent/CN1252901A/en active Pending
- 1998-04-14 WO PCT/DE1998/001053 patent/WO1998048495A2/en not_active Application Discontinuation
- 1998-04-14 CA CA002286774A patent/CA2286774A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| CN1252901A (en) | 2000-05-10 |
| WO1998048495A3 (en) | 1999-01-28 |
| WO1998048495A2 (en) | 1998-10-29 |
| EP0976184A2 (en) | 2000-02-02 |
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| FZDE | Discontinued |