WO1998048495A3 - Laser device - Google Patents

Laser device Download PDF

Info

Publication number
WO1998048495A3
WO1998048495A3 PCT/DE1998/001053 DE9801053W WO9848495A3 WO 1998048495 A3 WO1998048495 A3 WO 1998048495A3 DE 9801053 W DE9801053 W DE 9801053W WO 9848495 A3 WO9848495 A3 WO 9848495A3
Authority
WO
WIPO (PCT)
Prior art keywords
laser device
laser
diodes
modes
coupling
Prior art date
Application number
PCT/DE1998/001053
Other languages
German (de)
French (fr)
Other versions
WO1998048495A2 (en
Inventor
Gustav Mueller
Karl-Heinz Schlereth
Bruno Acklin
Johann Luft
Original Assignee
Siemens Ag
Gustav Mueller
Schlereth Karl Heinz
Bruno Acklin
Johann Luft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag, Gustav Mueller, Schlereth Karl Heinz, Bruno Acklin, Johann Luft filed Critical Siemens Ag
Priority to EP98931917A priority Critical patent/EP0976184A2/en
Priority to CA002286774A priority patent/CA2286774A1/en
Publication of WO1998048495A2 publication Critical patent/WO1998048495A2/en
Publication of WO1998048495A3 publication Critical patent/WO1998048495A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/0624—Controlling other output parameters than intensity or frequency controlling the near- or far field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Radiation-Therapy Devices (AREA)
  • Lasers (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

The invention relates to a laser device with at least one laser diode array with a plurality of adjacently arranged laser diodes. The laser device has an external resonator for coupling the modes of the individual laser diodes.
PCT/DE1998/001053 1997-04-18 1998-04-14 Laser device WO1998048495A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP98931917A EP0976184A2 (en) 1997-04-18 1998-04-14 Laser device
CA002286774A CA2286774A1 (en) 1997-04-18 1998-04-14 Laser device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19716422 1997-04-18
DE19716422.6 1997-04-18

Publications (2)

Publication Number Publication Date
WO1998048495A2 WO1998048495A2 (en) 1998-10-29
WO1998048495A3 true WO1998048495A3 (en) 1999-01-28

Family

ID=7827025

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1998/001053 WO1998048495A2 (en) 1997-04-18 1998-04-14 Laser device

Country Status (4)

Country Link
EP (1) EP0976184A2 (en)
CN (1) CN1252901A (en)
CA (1) CA2286774A1 (en)
WO (1) WO1998048495A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10019826A1 (en) * 2000-04-20 2001-10-31 Infineon Technologies Ag Laser array
US6580850B1 (en) 2000-11-24 2003-06-17 Applied Wdm, Inc. Optical waveguide multimode to single mode transformer
US6668003B2 (en) * 2002-02-12 2003-12-23 Quintessence Photonics Corporation Laser diode array with an in-phase output
DE102004038283B4 (en) * 2004-08-03 2008-04-03 Forschungsverbund Berlin E.V. Optoelectronic element and method for the coherent coupling of active regions of optoelectronic elements
CN106454648B (en) * 2016-07-15 2019-07-02 南京大学 A kind of acoustic waveguide
CN106338800B (en) * 2016-10-31 2018-06-12 华中科技大学 It is a kind of to be used for optical fiber and the horizontal coupler of chip chamber optical signal transmission
JP7302430B2 (en) * 2019-10-24 2023-07-04 富士通株式会社 Wavelength tunable light source, optical transmission device using the same, and wavelength tunable light source control method

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4578791A (en) * 1982-12-20 1986-03-25 Trw Inc. High-power injection laser diode structure
US4878724A (en) * 1987-07-30 1989-11-07 Trw Inc. Electrooptically tunable phase-locked laser array
US5023882A (en) * 1990-05-07 1991-06-11 Xerox Corporation Phased locked arrays with single lobe output beam
DE4123858C1 (en) * 1991-07-18 1992-12-03 Messerschmitt-Boelkow-Blohm Gmbh, 8012 Ottobrunn, De Semiconductor laser array stabilising arrangement - provides fibre-shaped reflectors so that radiation characteristic extends as ray along X=axis
JPH07168040A (en) * 1993-12-14 1995-07-04 Nippon Steel Corp Semiconductor laser converging apparatus
US5513196A (en) * 1995-02-14 1996-04-30 Deacon Research Optical source with mode reshaping
EP0723323A2 (en) * 1994-12-22 1996-07-24 CeramOptec GmbH Compound laser system for high power density

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4578791A (en) * 1982-12-20 1986-03-25 Trw Inc. High-power injection laser diode structure
US4878724A (en) * 1987-07-30 1989-11-07 Trw Inc. Electrooptically tunable phase-locked laser array
US5023882A (en) * 1990-05-07 1991-06-11 Xerox Corporation Phased locked arrays with single lobe output beam
DE4123858C1 (en) * 1991-07-18 1992-12-03 Messerschmitt-Boelkow-Blohm Gmbh, 8012 Ottobrunn, De Semiconductor laser array stabilising arrangement - provides fibre-shaped reflectors so that radiation characteristic extends as ray along X=axis
JPH07168040A (en) * 1993-12-14 1995-07-04 Nippon Steel Corp Semiconductor laser converging apparatus
EP0723323A2 (en) * 1994-12-22 1996-07-24 CeramOptec GmbH Compound laser system for high power density
US5513196A (en) * 1995-02-14 1996-04-30 Deacon Research Optical source with mode reshaping

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 095, no. 010 30 November 1995 (1995-11-30) *

Also Published As

Publication number Publication date
CA2286774A1 (en) 1998-10-29
EP0976184A2 (en) 2000-02-02
CN1252901A (en) 2000-05-10
WO1998048495A2 (en) 1998-10-29

Similar Documents

Publication Publication Date Title
WO2002001274A3 (en) Optical switch
IL121485A (en) Smart laser diode array assembly
DE69704000D1 (en) Diode laser arrangement with high efficiency
DE69523922D1 (en) FIBER GRID STABILIZED LASER DIODE
AU3399097A (en) Power supply for light emitting diode array
EP0968551A4 (en) Laser diode having smooth enable apc circuit
EP0632511A3 (en) A light emitting diode aggregate module and a method for manufacturing a light emitting diode aggregate module.
DE59600746D1 (en) DFB LASER DIODE STRUCTURE WITH COMPLEX OPTICAL GRID COUPLING
DE69834292D1 (en) HOUSING FOR LASER DIODE SERIES
DE69021237D1 (en) Laser diode and multi-beam optical head using the laser diode.
WO2002048778A3 (en) Laser pointer with multiple color beams
AU4974396A (en) Laser package with reversed laser diode
EP0661784A3 (en) Semiconductor laser diode.
FR2704094B1 (en) Monolithic diode network.
DE69412693T2 (en) Laser diode with a vertical resonator
WO1998048495A3 (en) Laser device
EP0392714A3 (en) A semiconductor laser device
DE69834860D1 (en) Surface-emitting semiconductor laser with annular resonator
EP0661786A3 (en) Laser diode arrays with close beam offsets.
EP0980010A4 (en) Field-distribution conversion optical fiber and laser diode module comprising the field-distribution conversion optical fiber
AU3859000A (en) Tunable laser transmitter with internal wavelength grid generators
IT1276017B1 (en) CONTROL DEVICE FOR SEMICONDUCTOR, HIGH POWER LASER USING A MONOLITHIC SEMICONDUCTOR DEVICE
AU8251798A (en) A laser diode of the type having a buried heterostructure
EP0606092A3 (en) Laser diode element.
IT1298181B1 (en) OPTICAL FIBER AMPLIFIER, WITH REDUCED CONSUMPTION POWER.

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 98804305.X

Country of ref document: CN

AK Designated states

Kind code of ref document: A2

Designated state(s): CA CN RU US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
AK Designated states

Kind code of ref document: A3

Designated state(s): CA CN RU US

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 1998931917

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 2286774

Country of ref document: CA

Ref document number: 2286774

Country of ref document: CA

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 09420462

Country of ref document: US

WWP Wipo information: published in national office

Ref document number: 1998931917

Country of ref document: EP

WWW Wipo information: withdrawn in national office

Ref document number: 1998931917

Country of ref document: EP