CA2274666A1 - Commutateur optoelectrique de tension-phase comportant des photodiodes - Google Patents
Commutateur optoelectrique de tension-phase comportant des photodiodes Download PDFInfo
- Publication number
- CA2274666A1 CA2274666A1 CA002274666A CA2274666A CA2274666A1 CA 2274666 A1 CA2274666 A1 CA 2274666A1 CA 002274666 A CA002274666 A CA 002274666A CA 2274666 A CA2274666 A CA 2274666A CA 2274666 A1 CA2274666 A1 CA 2274666A1
- Authority
- CA
- Canada
- Prior art keywords
- light
- photodiode
- voltage
- switch
- photodiodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004020 conductor Substances 0.000 claims abstract description 31
- 230000005693 optoelectronics Effects 0.000 claims abstract description 29
- 238000005286 illumination Methods 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
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- 230000005540 biological transmission Effects 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 5
- 238000012546 transfer Methods 0.000 claims description 4
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- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
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- 238000004519 manufacturing process Methods 0.000 description 4
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- 238000013459 approach Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 210000001525 retina Anatomy 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
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- 230000002277 temperature effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000012377 drug delivery Methods 0.000 description 1
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- 239000012530 fluid Substances 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 206010033675 panniculitis Diseases 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000037368 penetrate the skin Effects 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
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- 230000002207 retinal effect Effects 0.000 description 1
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- 238000012360 testing method Methods 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Transform (AREA)
- Testing Or Calibration Of Command Recording Devices (AREA)
Abstract
L'invention se rapporte à un commutateur optoélectronique ("Opsistor") susceptible d'être commandé par différentes parties du spectre optique et capable de fournir des fréquences permettant une commutation rapide. Ce commutateur qui est fabriqué sous la forme d'un circuit intégré monolithique comporte deux photodiodes parallèles inverses, très rapprochées, de préférence disposées sur un substrat en silicium monolithique, de sorte que l'anode d'une photodiode est électriquement reliée à la cathode de la seconde électrode par l'intermédiaire d'un premier conducteur et la cathode de la première électrode est électriquement reliée à l'anode de la seconde photodiode par l'intermédiaire d'un second conducteur. L'état tension-phase de ce commutateur "opsistor" est déterminé par l'éclairage relatif des deux photodiodes et peut être rapidement commuté. Ce commutateur "opsistor" peut être mis en oeuvre dans des optocoupleurs à grande vitesse, des détecteurs de positions optiques linéaires, des détecteurs de cibles et de contours, des détecteurs pour la reconnaissance d'images, des sous-unités de base d'ordinateurs à états optiquement définis et des codeurs optiques à haute résolution.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US1997/022229 WO1999027589A1 (fr) | 1997-11-26 | 1997-11-26 | Commutateur optoelectrique de tension-phase comportant des photodiodes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2274666A1 true CA2274666A1 (fr) | 1999-06-03 |
Family
ID=22262204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002274666A Abandoned CA2274666A1 (fr) | 1997-11-26 | 1997-11-26 | Commutateur optoelectrique de tension-phase comportant des photodiodes |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0954881A1 (fr) |
| JP (1) | JP2002511947A (fr) |
| CA (1) | CA2274666A1 (fr) |
| WO (1) | WO1999027589A1 (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE202010001194U1 (de) * | 2010-01-21 | 2011-06-01 | Sick Ag, 79183 | Optoelektronischer Sensor |
| US10373991B2 (en) | 2015-08-19 | 2019-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device, operating method thereof, and electronic device |
| CN107332546B (zh) * | 2016-04-28 | 2021-10-22 | 大日科技股份有限公司 | 光电开关 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4477721A (en) * | 1982-01-22 | 1984-10-16 | International Business Machines Corporation | Electro-optic signal conversion |
| CH684971A5 (de) * | 1989-03-16 | 1995-02-15 | Landis & Gyr Tech Innovat | Ultraviolettlicht-Sensor. |
| US5130528A (en) * | 1991-03-01 | 1992-07-14 | International Business Machines Corporation | Opto-photo-electric switch |
| WO1996039221A1 (fr) * | 1995-06-06 | 1996-12-12 | Vincent Chow | Implant retinien a base de microphotodiodes a plusieurs phases et systeme de simulation retinienne par imagerie adaptative |
-
1997
- 1997-11-26 CA CA002274666A patent/CA2274666A1/fr not_active Abandoned
- 1997-11-26 WO PCT/US1997/022229 patent/WO1999027589A1/fr not_active Application Discontinuation
- 1997-11-26 JP JP52168599A patent/JP2002511947A/ja not_active Ceased
- 1997-11-26 EP EP97950833A patent/EP0954881A1/fr not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002511947A (ja) | 2002-04-16 |
| WO1999027589A1 (fr) | 1999-06-03 |
| EP0954881A1 (fr) | 1999-11-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| FZDE | Dead |