WO1999027589A1 - Commutateur optoelectrique de tension-phase comportant des photodiodes - Google Patents

Commutateur optoelectrique de tension-phase comportant des photodiodes Download PDF

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Publication number
WO1999027589A1
WO1999027589A1 PCT/US1997/022229 US9722229W WO9927589A1 WO 1999027589 A1 WO1999027589 A1 WO 1999027589A1 US 9722229 W US9722229 W US 9722229W WO 9927589 A1 WO9927589 A1 WO 9927589A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
photodiode
voltage
switch
photodiodes
Prior art date
Application number
PCT/US1997/022229
Other languages
English (en)
Inventor
Alan Y. Chow
Vincent Y. Chow
Original Assignee
Chow Alan Y
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chow Alan Y filed Critical Chow Alan Y
Priority to PCT/US1997/022229 priority Critical patent/WO1999027589A1/fr
Priority to JP52168599A priority patent/JP2002511947A/ja
Priority to CA002274666A priority patent/CA2274666A1/fr
Priority to AU53728/98A priority patent/AU761555B2/en
Priority to EP97950833A priority patent/EP0954881A1/fr
Publication of WO1999027589A1 publication Critical patent/WO1999027589A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors

Definitions

  • This invention relates in general to a voltage-phase optoelectronic switch (referred to as an "opsistor”), and in particular to a wavelength-controllable opsistor (referred to as an "OPS-F”) fabricated as a monolithic integrated circuit with capabilities of extremely rapid switch frequencies, high resistance to external noise and interference, precise optical position sensing, and long-distance signal sensing.
  • opsistor voltage-phase optoelectronic switch
  • OPS-F wavelength-controllable opsistor
  • This invention also relates to several applications of the opsistor and OPS-F of this invention including long-distance open-air data transmission devices; high-speed fiber optic data transmission devices; the basic logic and/or memory unit of a hybrid optoelectronic based state machine; high resolution optical encoders; and sensitive edge and target sensors that are useful for image and pattern recognition applications; information transfer devices when a physical electrical interconnect is not practical such as to and from moving devices.
  • Many other optical switch applications may benefit from the opsistor.
  • optical switches were typically based on optosensors
  • circuitry increase the complexity and cost of such devices. Further, the transmitter and
  • Another aspect of the present invention is a new
  • wavelength-controllable opsistor that allows voltage-phase switch events of the
  • the opsistor to be controlled by light.
  • the opsistor is comprised of
  • cathode of the first photodiode is electrically connected via a second conductor to the
  • the voltage-phase of the opsistor (positive or negative) is signal controlled by relative illumination changes to the two photodiodes
  • the voltage-phase of the opsistor is
  • TM2 transmitter
  • HSFODT high-speed fiber optic data transmission
  • opsistor high speed, high-sensitivity, high noise resistance, high linear discrimination, and long transmitter-receiver distance.
  • the opsistor in its most basic form comprises two inverse parallel
  • photodiodes (the "first” and the “second” photodiode) disposed in close proximity
  • photodiode is electrically connected to the cathode of the second photodiode via a
  • the cathode of the first photodiode is electrically connected to the anode of the second photodiode via a second common conductor.
  • the voltage-phase will be of the opposite direction. In comparison to the
  • the voltage-phase of the opsistor is actively driven by its two opsistor photodiodes and
  • OPS-F is controllable by varying the illumination balance of the first and second
  • the first and second bandwidth light sources can include light emitting diodes (“LED”s) and/or lasers either of which are LEDs.
  • inventions are many, and include, high-speed optocouplers and optoisolators used for
  • artificial retina devices are designed to restore vision to certain blind individuals by
  • the opsistor In its use as the receiving unit of a high speed optocoupler, the opsistor
  • the intensity of two transmitter light sources providing signal to the two opsistor photodiodes is driven by varying the intensity of two transmitter light sources providing signal to the two opsistor photodiodes. This is accomplished by using two LEDs or lasers each positioned over one of the two photodiode subunits, each driven by a signal source.
  • each transmitter is closer to one of the opsistor photodiodes, each transmitter will preferentially stimulate the photodiode that it is closest to. In this manner, small
  • Figure 1 is a schematic diagram of the basic opsistor according to the
  • FIG. 2 is a schematic diagram of the OPS-F according to the second
  • Figure 3 is a plan view of the OPS-F constructed as a monolithic
  • Figure 4 is a three-dimensional section view of the OPS-F constructed as a monolithic integrated circuit according to the second preferred embodiment of the present invention taken along the plane of line IV-IV of FIG. 3;
  • FIG. 5 is a diagram illustrating a TM2/OPS-F combination used for long-distance open-air data transmission ("LDOADT");
  • Figure 6 is a diagram illustrating a TM2/OPS-F combination used in
  • Figure 7a is a cross-sectional diagram of a TM2/OPS-F monolithic
  • Figure 7b is a diagram illustrating the laser write of a OPS-F disposed
  • the laser write changing the voltage-phase state of the OPS-F to one of three states of the tri-state
  • Figure 8 is a diagram illustrating two opsistors used as the
  • Figures 9A-C are diagrams illustrating an opsistor disposed on a
  • LOPS linear optical position sensor
  • Figure 10 is a diagram illustrating a first thin substrate opsistor-based
  • opsistor-based LOPS rotated at 90 degrees relative to the first LOPS to produce a
  • the opsistor (10) (Fig. 1) comprises two PIN photodiodes, the first photodiode (12) and the second photodiode (14), electrically connected in an inverse parallel
  • cathode of the first photodiode (12) is connected to the anode of the second photodiode (14) via a second common conductor (18).
  • the second photodiode (14) is represented by the arrows (26).
  • photodiodes (12,14) produces a higher voltage which is dependent on the relative
  • the first output terminal (20) will be positive and the voltage-phase measured from the
  • a preferred embodiment is a bandwidth-filtered opsistor ("the OPS-F") (30).
  • the OPS-F (30) comprises two PIN photodiodes (32,34), the first photodiode (32) filtered with the first bandwidth-portion filter (33), and the second
  • photodiode (34) filter with the second bandwidth-portion filter (35), electrically
  • first bandwidth-portion filter (33) passes a different bandwidth of transmitter signal
  • the OPS-F (30) is measured from the first output terminal (40) and the second output
  • first photodiode (32) is represented by the arrows (44).
  • second photodiode (42) is represented by the arrows (44).
  • bandwidth-portion signal light source (“WPSLS-2")(46) to the second photodiode (34)
  • photodiode (32, 34) responds only to its own specific bandwidth of light, WPSLS-1
  • photodiode (32) receives a greater illumination from WPSLS-1 (44) and thus produces a higher voltage than the second photodiode (34) being illuminated by PSLS-2 (46), then the voltage-phase measured from the first output terminal (40) will be negative
  • first output terminal (40) will be positive and the voltage-phase measured from the
  • the OPS-F device (30) is constructed
  • the OPS-F (30) consists of two PIN photodiodes
  • first photodiode (32) is electrically connected to the anode (34a) of the second photodiode (34) via a first common conductor (36), and the anode (32a) of the first
  • photodiode (32) is connected to the cathode (34c) of the second photodiode (34) via a
  • the first bandwidth-portion filter (33) passes a different bandwidth of stimulating light than the second bandwidth-portion filter (35).
  • the voltage-phase developed by the OPS-F (30) is measured from the first common
  • the voltage-phase developed at the common conductors (36,38) is determined by which of the two photodiodes (32,34) produces a higher voltage which
  • the illumination of the entire OPS-F (30) contains a
  • P+ surface (40) of the first photodiode (32) has its anode (32a) deposited around the
  • the P+ surface (42) of the second photodiode (34) has its anode (34a) deposited around the
  • silicon may also be use as a starting monolithic silicon substrate by altering the fabrication of the OPS-F's photodiodes. As illustrated in Fig. 4, the construction of the OPS-F (30) follows
  • N-region (60) are fabricated in close proximity to each other in the starting undoped
  • a first N+ region (52), and a second N+ region (62) are then fabricated
  • doped P-region (48) and a second heavily doped P-region (56) are then fabricated in
  • a first intrinsic layer is first intrinsic layer
  • intrinsic layer (58) then forms at the junction of the P-region (56) and the N-region
  • a first P+ region (40) is then fabricated in the first P-region (48), and a second
  • P+-region (42) is then fabricated in the second P-region (56).
  • a first metallic cathode (32c) is deposited on the entirety of the first N+ region (52) to permit a large
  • wavelength-portion filter (35) which in the preferred embodiment is a multilayer
  • Filter layers (33,35) each pass a different bandwidth of light within the
  • the first filter layer (33) has a bandwidth pass
  • the second filter layer (35) has a bandwidth pass from
  • a silicon dioxide insulating layer (70) is fabricated on the areas of the
  • common conductor (36) is then deposited to connect the first cathode (32c) to the second anode (34a), and a second common conductor (38) is deposited to connect the
  • FIG. 5 illustrates a TM2/OPS-F combination used for long-distance open-air data transmission (“LDOADT”) with characteristic high resistance to
  • the TM2 (70) is provided signal coding and powered by the transmitter (72).
  • the WPSLS-1(44) and the WPSLS-2 are provided signal coding and powered by the transmitter (72).
  • TM2 examples include LEDs, lasers, or any light source capable of producing
  • bandwidth signal light (“WPSL-2”) (76), is highly resistant to common mode noise
  • the TM2 signal (78) is sensed by the OPS-F (30) and differentially converted
  • OPS-F (30) is decoded and reconstructed by a receiver (86) in an industry standard manner.
  • OPS-F receiver may receive serial communication
  • a subcutaneously implanted OPS-F sensor may receive serial communications via an external TM2 transmitter to provide power and programming to an implanted drug delivery pump.
  • a transmission LED is modulated at a carrier
  • a carrier frequency approximately 15X higher than the target data rate or baud rate.
  • the maximum data rate reliably received is limited by
  • the TM2/OPS-F combination uses an active
  • This TM2 bi-phasic drive system transmits two wavelengths alternately to produce the effect of a carrier signal at
  • GREEN is ON during the positive excursion of the carrier and RED is
  • FIG. 6 illustrates a TM2/OPS-F combination used for High-Speed
  • the TM2 (70) is provided signal
  • TM2 examples include LEDs, lasers, or any light source capable of producing
  • the TM2 digital signal (78) comprised of the first bandwidth signal light (“WPSL-1”) (74) and the second
  • bandwidth signal light (WPSL-2) (76) is highly resistant to fiber attenuations such as
  • the TM2 signal (78) is sensed by the OPS-F (30) and differentially converted into positive or negative voltage-phase signals by the first photodiode (32) and the second photodiode (34) of
  • the voltage-phase developed by the OPS-F (30) is decoded and
  • the S/N ratio of a fiber link can be improved upon compared to the current
  • a DC-coupled amplifier can be used that eliminates many capacitor-related issues (e.g., phase and time delays) for processing ultra-fast signals. Balanced detection also eliminates the
  • application may be usage of a lower grade fiber for connection into single family homes that satisfies the required data bandwidth but has higher cost effectiveness.
  • Figure 7a is a is a cross-sectional diagram of a TM2/OPS-F monolithic
  • optical fiber link used in an optoelectronic based state machine.
  • preferably is composed of amorphous silicon LEDs, is fabricated within the monolithic
  • the OPS-F (30) is also fabricated within the monolithic silicon substrate (92) using techniques standard to the industry. Digital
  • informational data is optically transmitted from a TM2 (70) to a target OPS-F (30) via
  • micro-optical fiber light conduit (90) fabricated upon the silicon substrate (92) using
  • Figure 7b illustrates a laser write of a OPS-F subunit (30a) disposed as
  • OPS-F (30) is used as the basic switch component of an optoelectronic based state
  • the TM2 laser beam (94) can rapidly write
  • OPS-F based optoelectronic state machine functions in the
  • a state machine performs a specific function determined
  • Field programmable logic silicon devices such as gate arrays, and one-time programmable devices are state machines
  • UV-erasable OTP the computer chip is "dormant" after erasure but becomes
  • the OPS-F device of this invention also has a
  • toggle switch When OPS-F receiver is activated by TM2 light transmission, the switch can "toggle” to the UP or DOWN position for logic 1 (positive voltage vector)
  • the OPS-F is the
  • FIFO First In First Out
  • the entire state machine can be quickly reprogrammed for functionality as the
  • the OPS-F "building block” permits integration of many "smart state machine” blocks
  • a "smart state machine” block can, for example, change from a
  • TM2/OPS-F combination over the present art include: (1) faster optocoupler
  • fluids may surround the silicon, and (4) field programmable devices where isolation
  • the photo-sensing portion (101) within an optical encoder utilizing the device of this invention employs a first opsistor (30) and a
  • the first opsistor (30) has a first
  • the second opsistor (100) has a first photodiode subunit (102) designated “E”, and a second photodiode subunit (104) designated "F”.
  • the slot widths (106) are thus functionally split into two portions each.
  • two-slot, two-opsistor quadrature encoder can achieve twice the resolution of the same encoder using two standard photodiodes.
  • FIGS. 9a-9c illustrate the opsistor of the present invention used as a
  • photodiode subunits (32, 34) which may be fabricated together very closely on a monolithic silicon substrate, the opsistor's rejection of common mode attenuations
  • micro-beam balances include micro-beam balances, optical alignment applications, motion
  • Figures 10 A-C illustrate a two-dimensional target sensor (130)
  • LOPS opsistor consisting of photodiode subunits (112, 114), which is fabricated
  • Such a target sensor (130) uses one LOPS opsistor sensor (110, 120) for each axis of position sensing of a light target (94). Characteristics and quality of such
  • a two-dimensional target sensor (130) include simple fabrication and minimal
  • dead-spot area in additional to all of the characteristics of the single LOPS sensor.
  • Uses of such a LOPS device include those requiring high precision two-dimensional

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optical Transform (AREA)
  • Testing Or Calibration Of Command Recording Devices (AREA)

Abstract

L'invention se rapporte à un commutateur optoélectronique ('Opsistor') susceptible d'être commandé par différentes parties du spectre optique et capable de fournir des fréquences permettant une commutation rapide. Ce commutateur qui est fabriqué sous la forme d'un circuit intégré monolithique comporte deux photodiodes parallèles inverses, très rapprochées, de préférence disposées sur un substrat en silicium monolithique, de sorte que l'anode d'une photodiode est électriquement reliée à la cathode de la seconde électrode par l'intermédiaire d'un premier conducteur et la cathode de la première électrode est électriquement reliée à l'anode de la seconde photodiode par l'intermédiaire d'un second conducteur. L'état tension-phase de ce commutateur 'opsistor' est déterminé par l'éclairage relatif des deux photodiodes et peut être rapidement commuté. Ce commutateur 'opsistor' peut être mis en oeuvre dans des optocoupleurs à grande vitesse, des détecteurs de positions optiques linéaires, des détecteurs de cibles et de contours, des détecteurs pour la reconnaissance d'images, des sous-unités de base d'ordinateurs à états optiquement définis et des codeurs optiques à haute résolution.
PCT/US1997/022229 1996-11-25 1997-11-26 Commutateur optoelectrique de tension-phase comportant des photodiodes WO1999027589A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
PCT/US1997/022229 WO1999027589A1 (fr) 1997-11-26 1997-11-26 Commutateur optoelectrique de tension-phase comportant des photodiodes
JP52168599A JP2002511947A (ja) 1997-11-26 1997-11-26 波長制御可能な電圧位相フォトダイオード光電子工学的スイッチ（「オプジスタ」）
CA002274666A CA2274666A1 (fr) 1997-11-26 1997-11-26 Commutateur optoelectrique de tension-phase comportant des photodiodes
AU53728/98A AU761555B2 (en) 1996-11-25 1997-11-26 Optoelectric voltage-phase switch using photodiodes
EP97950833A EP0954881A1 (fr) 1997-11-26 1997-11-26 Commutateur optoelectrique de tension-phase comportant des photodiodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1997/022229 WO1999027589A1 (fr) 1997-11-26 1997-11-26 Commutateur optoelectrique de tension-phase comportant des photodiodes

Publications (1)

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WO1999027589A1 true WO1999027589A1 (fr) 1999-06-03

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EP (1) EP0954881A1 (fr)
JP (1) JP2002511947A (fr)
CA (1) CA2274666A1 (fr)
WO (1) WO1999027589A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202010001194U1 (de) * 2010-01-21 2011-06-01 Sick Ag, 79183 Optoelektronischer Sensor
CN107332546A (zh) * 2016-04-28 2017-11-07 大日科技股份有限公司 光电开关
US10992891B2 (en) 2015-08-19 2021-04-27 Semiconductor Energy Laboratory Co., Ltd. Imaging device, operating method thereof, and electronic device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0084621A2 (fr) * 1982-01-22 1983-08-03 International Business Machines Corporation Convertisseur de signaux à semi-conducteur utilisant le photoncouplage
US5130776A (en) * 1989-03-16 1992-07-14 Landis & Gyr Betriebs Ag Ultraviolet-light photodiode
EP0501904A2 (fr) * 1991-03-01 1992-09-02 International Business Machines Corporation Commutateur opto-électrique
WO1996039221A1 (fr) * 1995-06-06 1996-12-12 Vincent Chow Implant retinien a base de microphotodiodes a plusieurs phases et systeme de simulation retinienne par imagerie adaptative

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0084621A2 (fr) * 1982-01-22 1983-08-03 International Business Machines Corporation Convertisseur de signaux à semi-conducteur utilisant le photoncouplage
US5130776A (en) * 1989-03-16 1992-07-14 Landis & Gyr Betriebs Ag Ultraviolet-light photodiode
EP0501904A2 (fr) * 1991-03-01 1992-09-02 International Business Machines Corporation Commutateur opto-électrique
WO1996039221A1 (fr) * 1995-06-06 1996-12-12 Vincent Chow Implant retinien a base de microphotodiodes a plusieurs phases et systeme de simulation retinienne par imagerie adaptative

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
HENG-CHIH LIN ET AL: "THE VERTICAL INTEGRATION OF CRYSTALLINE NMOS AND AMORPHOUS ORIENTATIONAL EDGE DETECTOR", IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 39, no. 12, 1 December 1992 (1992-12-01), pages 2810 - 2812, XP000323181 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202010001194U1 (de) * 2010-01-21 2011-06-01 Sick Ag, 79183 Optoelektronischer Sensor
US10992891B2 (en) 2015-08-19 2021-04-27 Semiconductor Energy Laboratory Co., Ltd. Imaging device, operating method thereof, and electronic device
US11431932B2 (en) 2015-08-19 2022-08-30 Semiconductor Energy Laboratory Co., Ltd. Imaging device, operating method thereof, and electronic device
US11706545B2 (en) 2015-08-19 2023-07-18 Semiconductor Energy Laboratory Co., Ltd. Imaging device, operating method thereof, and electronic device
US12058464B2 (en) 2015-08-19 2024-08-06 Semiconductor Energy Laboratory Co., Ltd. Imaging device, operating method thereof, and electronic device
CN107332546A (zh) * 2016-04-28 2017-11-07 大日科技股份有限公司 光电开关

Also Published As

Publication number Publication date
JP2002511947A (ja) 2002-04-16
CA2274666A1 (fr) 1999-06-03
EP0954881A1 (fr) 1999-11-10

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