CA2265617A1 - Gravure de structures de silicium par ions reactifs - Google Patents

Gravure de structures de silicium par ions reactifs Download PDF

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Publication number
CA2265617A1
CA2265617A1 CA002265617A CA2265617A CA2265617A1 CA 2265617 A1 CA2265617 A1 CA 2265617A1 CA 002265617 A CA002265617 A CA 002265617A CA 2265617 A CA2265617 A CA 2265617A CA 2265617 A1 CA2265617 A1 CA 2265617A1
Authority
CA
Canada
Prior art keywords
etching
mask
polymer
previous
sidewall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002265617A
Other languages
English (en)
Inventor
Mark Gross
Michael Bazylenko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unisearch Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2265617A1 publication Critical patent/CA2265617A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12173—Masking
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12176—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Abstract

L'invention concerne un procédé de gravure de couches/substrats à base de silicium par un système (10) d'attaque par ions réactifs, qui utilise un mélange gazeux de gravure constitué de CHF¿3?/AR à travers un masque en résine photosensible. La gravure par ions réactifs est effectuée dans des conditions de dépôt isotrope simultané d'un polymère à base de carbone, la vitesse de dépôt du polymère étant régulée par ajustement des paramètres de régulation de l'opération, à savoir des paramètres de puissance radioélectrique, de température d'échantillon et d'additions d'O¿2? et de CF¿4?.
CA002265617A 1996-10-04 1997-10-03 Gravure de structures de silicium par ions reactifs Abandoned CA2265617A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
AUPO2818A AUPO281896A0 (en) 1996-10-04 1996-10-04 Reactive ion etching of silica structures for integrated optics applications
AUPO2818 1996-10-04
PCT/AU1997/000663 WO1998015504A1 (fr) 1996-10-04 1997-10-03 Gravure de structures de silicium par ions reactifs

Publications (1)

Publication Number Publication Date
CA2265617A1 true CA2265617A1 (fr) 1998-04-16

Family

ID=3797129

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002265617A Abandoned CA2265617A1 (fr) 1996-10-04 1997-10-03 Gravure de structures de silicium par ions reactifs

Country Status (7)

Country Link
US (1) US20020104821A1 (fr)
EP (1) EP0968142A4 (fr)
JP (1) JP2001501573A (fr)
KR (1) KR20000048865A (fr)
AU (1) AUPO281896A0 (fr)
CA (1) CA2265617A1 (fr)
WO (1) WO1998015504A1 (fr)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2348399A (en) * 1999-03-31 2000-10-04 Univ Glasgow Reactive ion etching with control of etch gas flow rate, pressure and rf power
US6942811B2 (en) * 1999-10-26 2005-09-13 Reflectivity, Inc Method for achieving improved selectivity in an etching process
JP2002043423A (ja) * 2000-07-24 2002-02-08 Tokyo Ohka Kogyo Co Ltd 被膜の処理方法およびこの方法を用いた半導体素子の製造方法
US20020158047A1 (en) * 2001-04-27 2002-10-31 Yiqiong Wang Formation of an optical component having smooth sidewalls
US7038293B2 (en) * 2004-03-29 2006-05-02 Northrop Grumman Corp. Dissipation of a charge buildup on a wafer portion
DE102004049233A1 (de) * 2004-10-09 2006-04-20 Schott Ag Verfahren zur Mikrostrukturierung von Substraten aus Flachglas
US8187481B1 (en) * 2005-05-05 2012-05-29 Coho Holdings, Llc Random texture anti-reflection optical surface treatment
WO2006135098A1 (fr) * 2005-06-14 2006-12-21 Asahi Glass Co., Ltd. Procede de finissage d'une surface de substrat en verre prepoli
FR2896315B1 (fr) * 2005-11-08 2010-09-17 Cit Alcatel Fibre optique amplificatrice
DE102006051550B4 (de) * 2006-10-30 2012-02-02 Fhr Anlagenbau Gmbh Verfahren und Vorrichtung zum Strukturieren von Bauteilen unter Verwendung eines Werkstoffs auf der Basis von Siliziumoxid
US9406709B2 (en) 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
US8507840B2 (en) 2010-12-21 2013-08-13 Zena Technologies, Inc. Vertically structured passive pixel arrays and methods for fabricating the same
US20110115041A1 (en) * 2009-11-19 2011-05-19 Zena Technologies, Inc. Nanowire core-shell light pipes
US8519379B2 (en) 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
US9000353B2 (en) 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US8835831B2 (en) 2010-06-22 2014-09-16 Zena Technologies, Inc. Polarized light detecting device and fabrication methods of the same
US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
US8791470B2 (en) 2009-10-05 2014-07-29 Zena Technologies, Inc. Nano structured LEDs
US8890271B2 (en) 2010-06-30 2014-11-18 Zena Technologies, Inc. Silicon nitride light pipes for image sensors
US8269985B2 (en) 2009-05-26 2012-09-18 Zena Technologies, Inc. Determination of optimal diameters for nanowires
US8546742B2 (en) 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US8384007B2 (en) 2009-10-07 2013-02-26 Zena Technologies, Inc. Nano wire based passive pixel image sensor
US9082673B2 (en) 2009-10-05 2015-07-14 Zena Technologies, Inc. Passivated upstanding nanostructures and methods of making the same
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
US9515218B2 (en) 2008-09-04 2016-12-06 Zena Technologies, Inc. Vertical pillar structured photovoltaic devices with mirrors and optical claddings
US8274039B2 (en) 2008-11-13 2012-09-25 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
US8229255B2 (en) 2008-09-04 2012-07-24 Zena Technologies, Inc. Optical waveguides in image sensors
US8889455B2 (en) 2009-12-08 2014-11-18 Zena Technologies, Inc. Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor
US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
US8299472B2 (en) 2009-12-08 2012-10-30 Young-June Yu Active pixel sensor with nanowire structured photodetectors
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
US9111729B2 (en) * 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods
US9190289B2 (en) * 2010-02-26 2015-11-17 Lam Research Corporation System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
US9155181B2 (en) 2010-08-06 2015-10-06 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
US8999104B2 (en) 2010-08-06 2015-04-07 Lam Research Corporation Systems, methods and apparatus for separate plasma source control
US9177762B2 (en) 2011-11-16 2015-11-03 Lam Research Corporation System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing
US10283325B2 (en) 2012-10-10 2019-05-07 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
JP6165456B2 (ja) * 2013-02-12 2017-07-19 株式会社日立ハイテクノロジーズ プラズマ処理装置
EP3839648A1 (fr) 2019-12-18 2021-06-23 ETA SA Manufacture Horlogère Suisse Procede de fabrication d'une piece mecanique pourvue d'une zone fonctionnelle magnetique
EP3839650A1 (fr) 2019-12-18 2021-06-23 ETA SA Manufacture Horlogère Suisse Procede de fabrication d`au moins deux pieces mecaniques
CN113808966B (zh) * 2020-06-16 2023-10-17 长鑫存储技术有限公司 半导体设备的调试方法及半导体器件的制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4209356A (en) * 1978-10-18 1980-06-24 General Electric Company Selective etching of polymeric materials embodying silicones via reactor plasmas
US4452665A (en) * 1983-10-12 1984-06-05 International Business Machines Corporation Polymeric halocarbons as plasma etch barriers
US4460435A (en) * 1983-12-19 1984-07-17 Rca Corporation Patterning of submicrometer metal silicide structures
US4482427A (en) * 1984-05-21 1984-11-13 International Business Machines Corporation Process for forming via holes having sloped walls
JPS61191070A (ja) * 1985-02-20 1986-08-25 Toshiba Corp 半導体装置の製造方法
US5302240A (en) * 1991-01-22 1994-04-12 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
KR20000048865A (ko) 2000-07-25
JP2001501573A (ja) 2001-02-06
WO1998015504A1 (fr) 1998-04-16
AUPO281896A0 (en) 1996-10-31
US20020104821A1 (en) 2002-08-08
EP0968142A1 (fr) 2000-01-05
EP0968142A4 (fr) 2003-08-06

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Legal Events

Date Code Title Description
EEER Examination request
FZDE Discontinued