CA2233631A1 - Capacitive thin films using diamond-like nanocomposite materials - Google Patents
Capacitive thin films using diamond-like nanocomposite materials Download PDFInfo
- Publication number
- CA2233631A1 CA2233631A1 CA002233631A CA2233631A CA2233631A1 CA 2233631 A1 CA2233631 A1 CA 2233631A1 CA 002233631 A CA002233631 A CA 002233631A CA 2233631 A CA2233631 A CA 2233631A CA 2233631 A1 CA2233631 A1 CA 2233631A1
- Authority
- CA
- Canada
- Prior art keywords
- diamond
- network
- carbon
- silicon
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000463 material Substances 0.000 title claims abstract description 50
- 239000002114 nanocomposite Substances 0.000 title abstract description 22
- 239000010409 thin film Substances 0.000 title description 3
- 239000002019 doping agent Substances 0.000 claims abstract description 73
- 239000003990 capacitor Substances 0.000 claims abstract description 71
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 45
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 31
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 26
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000001257 hydrogen Substances 0.000 claims abstract description 25
- 239000001301 oxygen Substances 0.000 claims abstract description 25
- 150000001875 compounds Chemical class 0.000 claims abstract description 23
- 230000000737 periodic effect Effects 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 47
- 238000000576 coating method Methods 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 29
- 239000003989 dielectric material Substances 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 20
- 150000002431 hydrogen Chemical class 0.000 claims description 18
- 239000007787 solid Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 6
- -1 polyphenylmethylsiloxane Polymers 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052755 nonmetal Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 125000005375 organosiloxane group Chemical group 0.000 claims 4
- 238000000354 decomposition reaction Methods 0.000 claims 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 58
- 238000000151 deposition Methods 0.000 description 27
- 239000010408 film Substances 0.000 description 27
- 230000008021 deposition Effects 0.000 description 23
- 238000007456 delayed laparoscopic cholecystectomy Methods 0.000 description 17
- 230000015556 catabolic process Effects 0.000 description 16
- 239000002243 precursor Substances 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 230000001965 increasing effect Effects 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 238000005087 graphitization Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 229910018557 Si O Inorganic materials 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000007774 longterm Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000004157 plasmatron Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000000192 extended X-ray absorption fine structure spectroscopy Methods 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 150000003961 organosilicon compounds Chemical class 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 210000001015 abdomen Anatomy 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 150000001518 atomic anions Chemical class 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000007833 carbon precursor Substances 0.000 description 1
- 230000000747 cardiac effect Effects 0.000 description 1
- 206010061592 cardiac fibrillation Diseases 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 210000000038 chest Anatomy 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000002600 fibrillogenic effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229920006289 polycarbonate film Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000001020 rhythmical effect Effects 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 238000004574 scanning tunneling microscopy Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 210000000115 thoracic cavity Anatomy 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S427/00—Coating processes
- Y10S427/103—Diamond-like carbon coating, i.e. DLC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Inorganic Insulating Materials (AREA)
- Carbon And Carbon Compounds (AREA)
- Non-Insulated Conductors (AREA)
- Ceramic Capacitors (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/538,475 US5638251A (en) | 1995-10-03 | 1995-10-03 | Capacitive thin films using diamond-like nanocomposite materials |
| US08/538,475 | 1995-10-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2233631A1 true CA2233631A1 (en) | 1997-04-10 |
Family
ID=24147084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002233631A Abandoned CA2233631A1 (en) | 1995-10-03 | 1996-09-25 | Capacitive thin films using diamond-like nanocomposite materials |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US5638251A (enExample) |
| EP (1) | EP1008157B1 (enExample) |
| JP (1) | JP3961025B2 (enExample) |
| KR (1) | KR100449603B1 (enExample) |
| CN (1) | CN1111882C (enExample) |
| AT (1) | ATE293835T1 (enExample) |
| AU (1) | AU700713B2 (enExample) |
| CA (1) | CA2233631A1 (enExample) |
| DE (1) | DE69634641T2 (enExample) |
| MX (1) | MX9802581A (enExample) |
| TW (1) | TW355803B (enExample) |
| WO (1) | WO1997013263A1 (enExample) |
Families Citing this family (74)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| US5736448A (en) * | 1995-12-04 | 1998-04-07 | General Electric Company | Fabrication method for thin film capacitors |
| US6080470A (en) * | 1996-06-17 | 2000-06-27 | Dorfman; Benjamin F. | Hard graphite-like material bonded by diamond-like framework |
| US5804259A (en) * | 1996-11-07 | 1998-09-08 | Applied Materials, Inc. | Method and apparatus for depositing a multilayered low dielectric constant film |
| US6146541A (en) * | 1997-05-02 | 2000-11-14 | Motorola, Inc. | Method of manufacturing a semiconductor device that uses a calibration standard |
| EP0885983A1 (en) * | 1997-06-19 | 1998-12-23 | N.V. Bekaert S.A. | Method for coating a substrate with a diamond like nanocomposite composition |
| US6627532B1 (en) * | 1998-02-11 | 2003-09-30 | Applied Materials, Inc. | Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition |
| US6593247B1 (en) | 1998-02-11 | 2003-07-15 | Applied Materials, Inc. | Method of depositing low k films using an oxidizing plasma |
| US6660656B2 (en) | 1998-02-11 | 2003-12-09 | Applied Materials Inc. | Plasma processes for depositing low dielectric constant films |
| US6054379A (en) * | 1998-02-11 | 2000-04-25 | Applied Materials, Inc. | Method of depositing a low k dielectric with organo silane |
| US6287990B1 (en) | 1998-02-11 | 2001-09-11 | Applied Materials, Inc. | CVD plasma assisted low dielectric constant films |
| US6303523B2 (en) | 1998-02-11 | 2001-10-16 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
| US6147009A (en) * | 1998-06-29 | 2000-11-14 | International Business Machines Corporation | Hydrogenated oxidized silicon carbon material |
| US6783620B1 (en) | 1998-10-13 | 2004-08-31 | Matsushita Electronic Materials, Inc. | Thin-laminate panels for capacitive printed-circuit boards and methods for making the same |
| US6114015A (en) * | 1998-10-13 | 2000-09-05 | Matsushita Electronic Materials, Inc. | Thin-laminate panels for capacitive printed-circuit boards and methods for making the same |
| US6171945B1 (en) | 1998-10-22 | 2001-01-09 | Applied Materials, Inc. | CVD nanoporous silica low dielectric constant films |
| US6268261B1 (en) | 1998-11-03 | 2001-07-31 | International Business Machines Corporation | Microprocessor having air as a dielectric and encapsulated lines and process for manufacture |
| US6245690B1 (en) * | 1998-11-04 | 2001-06-12 | Applied Materials, Inc. | Method of improving moisture resistance of low dielectric constant films |
| CN1075762C (zh) * | 1998-12-30 | 2001-12-05 | 中国科学院感光化学研究所 | 一种变色薄膜的制备方法 |
| US6399489B1 (en) | 1999-11-01 | 2002-06-04 | Applied Materials, Inc. | Barrier layer deposition using HDP-CVD |
| US6541367B1 (en) * | 2000-01-18 | 2003-04-01 | Applied Materials, Inc. | Very low dielectric constant plasma-enhanced CVD films |
| US6749813B1 (en) | 2000-03-05 | 2004-06-15 | 3M Innovative Properties Company | Fluid handling devices with diamond-like films |
| US6696157B1 (en) * | 2000-03-05 | 2004-02-24 | 3M Innovative Properties Company | Diamond-like glass thin films |
| US6795636B1 (en) | 2000-03-05 | 2004-09-21 | 3M Innovative Properties Company | Radiation-transmissive films on glass articles |
| AU2001250886A1 (en) * | 2000-03-20 | 2001-10-03 | N V. Bekaert S.A. | Materials having low dielectric constants and methods of making |
| US6531398B1 (en) | 2000-10-30 | 2003-03-11 | Applied Materials, Inc. | Method of depositing organosillicate layers |
| US6709721B2 (en) | 2001-03-28 | 2004-03-23 | Applied Materials Inc. | Purge heater design and process development for the improvement of low k film properties |
| US6486082B1 (en) * | 2001-06-18 | 2002-11-26 | Applied Materials, Inc. | CVD plasma assisted lower dielectric constant sicoh film |
| US6926926B2 (en) * | 2001-09-10 | 2005-08-09 | Applied Materials, Inc. | Silicon carbide deposited by high density plasma chemical-vapor deposition with bias |
| US6759327B2 (en) * | 2001-10-09 | 2004-07-06 | Applied Materials Inc. | Method of depositing low k barrier layers |
| US7588699B2 (en) * | 2001-11-02 | 2009-09-15 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Electrically conductive, optically transparent polymer/carbon nanotube composites and process for preparation thereof |
| US6890850B2 (en) * | 2001-12-14 | 2005-05-10 | Applied Materials, Inc. | Method of depositing dielectric materials in damascene applications |
| US6838393B2 (en) * | 2001-12-14 | 2005-01-04 | Applied Materials, Inc. | Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide |
| US7091137B2 (en) * | 2001-12-14 | 2006-08-15 | Applied Materials | Bi-layer approach for a hermetic low dielectric constant layer for barrier applications |
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| US6815373B2 (en) * | 2002-04-16 | 2004-11-09 | Applied Materials Inc. | Use of cyclic siloxanes for hardness improvement of low k dielectric films |
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| US20030206337A1 (en) * | 2002-05-06 | 2003-11-06 | Eastman Kodak Company | Exposure apparatus for irradiating a sensitized substrate |
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-
1996
- 1996-09-25 KR KR10-1998-0702428A patent/KR100449603B1/ko not_active Expired - Fee Related
- 1996-09-25 CA CA002233631A patent/CA2233631A1/en not_active Abandoned
- 1996-09-25 DE DE69634641T patent/DE69634641T2/de not_active Expired - Lifetime
- 1996-09-25 WO PCT/US1996/015368 patent/WO1997013263A1/en not_active Ceased
- 1996-09-25 EP EP96937640A patent/EP1008157B1/en not_active Expired - Lifetime
- 1996-09-25 AU AU75132/96A patent/AU700713B2/en not_active Ceased
- 1996-09-25 AT AT96937640T patent/ATE293835T1/de not_active IP Right Cessation
- 1996-09-25 CN CN96198464A patent/CN1111882C/zh not_active Expired - Fee Related
- 1996-09-25 JP JP51431497A patent/JP3961025B2/ja not_active Expired - Fee Related
-
1997
- 1997-04-01 TW TW086104157A patent/TW355803B/zh not_active IP Right Cessation
-
1998
- 1998-04-02 MX MX9802581A patent/MX9802581A/es unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US5638251A (en) | 1997-06-10 |
| KR19990063955A (ko) | 1999-07-26 |
| DE69634641D1 (de) | 2005-05-25 |
| KR100449603B1 (ko) | 2004-11-16 |
| WO1997013263A1 (en) | 1997-04-10 |
| CN1202978A (zh) | 1998-12-23 |
| AU700713B2 (en) | 1999-01-14 |
| EP1008157B1 (en) | 2005-04-20 |
| ATE293835T1 (de) | 2005-05-15 |
| CN1111882C (zh) | 2003-06-18 |
| AU7513296A (en) | 1997-04-28 |
| JPH11512885A (ja) | 1999-11-02 |
| JP3961025B2 (ja) | 2007-08-15 |
| EP1008157A1 (en) | 2000-06-14 |
| EP1008157A4 (en) | 2001-02-07 |
| MX9802581A (es) | 1998-11-30 |
| DE69634641T2 (de) | 2006-03-02 |
| TW355803B (en) | 1999-04-11 |
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