CA2134711A1 - Multilayer magnetoresistive sensor - Google Patents
Multilayer magnetoresistive sensorInfo
- Publication number
- CA2134711A1 CA2134711A1 CA002134711A CA2134711A CA2134711A1 CA 2134711 A1 CA2134711 A1 CA 2134711A1 CA 002134711 A CA002134711 A CA 002134711A CA 2134711 A CA2134711 A CA 2134711A CA 2134711 A1 CA2134711 A1 CA 2134711A1
- Authority
- CA
- Canada
- Prior art keywords
- layer
- magnetoresistive sensor
- ferromagnetic
- multilayer magnetoresistive
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000005291 magnetic effect Effects 0.000 claims abstract description 166
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 78
- 239000000463 material Substances 0.000 claims abstract description 60
- 125000006850 spacer group Chemical group 0.000 claims abstract description 25
- 230000008878 coupling Effects 0.000 claims abstract description 15
- 238000010168 coupling process Methods 0.000 claims abstract description 15
- 238000005859 coupling reaction Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 9
- 230000004044 response Effects 0.000 claims abstract description 9
- 238000000059 patterning Methods 0.000 claims abstract 2
- 230000005415 magnetization Effects 0.000 claims description 39
- 239000003302 ferromagnetic material Substances 0.000 claims description 38
- 239000004020 conductor Substances 0.000 claims description 33
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 26
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 26
- 239000010949 copper Substances 0.000 claims description 23
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 18
- 229910052715 tantalum Inorganic materials 0.000 claims description 18
- 229910052709 silver Inorganic materials 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 16
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052737 gold Inorganic materials 0.000 claims description 15
- 229910052742 iron Inorganic materials 0.000 claims description 14
- 229910052759 nickel Inorganic materials 0.000 claims description 14
- 229910052707 ruthenium Inorganic materials 0.000 claims description 13
- 229910017052 cobalt Inorganic materials 0.000 claims description 12
- 239000010941 cobalt Substances 0.000 claims description 12
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 12
- 239000000696 magnetic material Substances 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 7
- 239000007779 soft material Substances 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- 230000033001 locomotion Effects 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 19
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 17
- 239000010931 gold Substances 0.000 claims 17
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 claims 17
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 16
- 239000004332 silver Substances 0.000 claims 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 7
- 229910052782 aluminium Inorganic materials 0.000 claims 7
- 229910001316 Ag alloy Inorganic materials 0.000 claims 5
- 229910001020 Au alloy Inorganic materials 0.000 claims 5
- 229910000881 Cu alloy Inorganic materials 0.000 claims 5
- 229910000929 Ru alloy Inorganic materials 0.000 claims 5
- 229910000599 Cr alloy Inorganic materials 0.000 claims 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 3
- DTJAVSFDAWLDHQ-UHFFFAOYSA-N [Cr].[Co].[Pt] Chemical compound [Cr].[Co].[Pt] DTJAVSFDAWLDHQ-UHFFFAOYSA-N 0.000 claims 3
- QKGPHOLBTUQGIA-UHFFFAOYSA-N [Rh].[Fe].[Ni] Chemical compound [Rh].[Fe].[Ni] QKGPHOLBTUQGIA-UHFFFAOYSA-N 0.000 claims 3
- GUBSQCSIIDQXLB-UHFFFAOYSA-N cobalt platinum Chemical compound [Co].[Pt].[Pt].[Pt] GUBSQCSIIDQXLB-UHFFFAOYSA-N 0.000 claims 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 3
- BIJOYKCOMBZXAE-UHFFFAOYSA-N chromium iron nickel Chemical compound [Cr].[Fe].[Ni] BIJOYKCOMBZXAE-UHFFFAOYSA-N 0.000 claims 2
- OARDYGCRQSMJBL-UHFFFAOYSA-N iron nickel niobium Chemical compound [Ni][Fe][Nb] OARDYGCRQSMJBL-UHFFFAOYSA-N 0.000 claims 2
- 238000001514 detection method Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 134
- 230000000694 effects Effects 0.000 description 26
- 230000003993 interaction Effects 0.000 description 22
- 239000010408 film Substances 0.000 description 18
- 230000005290 antiferromagnetic effect Effects 0.000 description 16
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 14
- 239000002245 particle Substances 0.000 description 12
- 230000005330 Barkhausen effect Effects 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 239000002772 conduction electron Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- CLOMYZFHNHFSIQ-UHFFFAOYSA-N clonixin Chemical compound CC1=C(Cl)C=CC=C1NC1=NC=CC=C1C(O)=O CLOMYZFHNHFSIQ-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005381 magnetic domain Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910018979 CoPt Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005316 antiferromagnetic exchange Effects 0.000 description 1
- 239000002885 antiferromagnetic material Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- -1 mAgne~ium oxide Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- GWUSZQUVEVMBPI-UHFFFAOYSA-N nimetazepam Chemical group N=1CC(=O)N(C)C2=CC=C([N+]([O-])=O)C=C2C=1C1=CC=CC=C1 GWUSZQUVEVMBPI-UHFFFAOYSA-N 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- LZNWYQJJBLGYLT-UHFFFAOYSA-N tenoxicam Chemical compound OC=1C=2SC=CC=2S(=O)(=O)N(C)C=1C(=O)NC1=CC=CC=N1 LZNWYQJJBLGYLT-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Materials of the active region
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/173,590 US5452163A (en) | 1993-12-23 | 1993-12-23 | Multilayer magnetoresistive sensor |
| US173,590 | 1993-12-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2134711A1 true CA2134711A1 (en) | 1995-06-24 |
Family
ID=22632713
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002134711A Abandoned CA2134711A1 (en) | 1993-12-23 | 1994-10-31 | Multilayer magnetoresistive sensor |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US5452163A (enExample) |
| EP (1) | EP0660127B1 (enExample) |
| JP (1) | JP2784461B2 (enExample) |
| KR (1) | KR0146012B1 (enExample) |
| CN (1) | CN1068689C (enExample) |
| AT (1) | ATE221999T1 (enExample) |
| BR (1) | BR9405159A (enExample) |
| CA (1) | CA2134711A1 (enExample) |
| DE (1) | DE69431149T2 (enExample) |
| MY (1) | MY116219A (enExample) |
| PH (1) | PH30835A (enExample) |
| SG (1) | SG42849A1 (enExample) |
| TW (1) | TW277132B (enExample) |
Families Citing this family (76)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5657190A (en) * | 1993-03-02 | 1997-08-12 | Tdk Corporation | Apparatus for detecting a magnetic field using a giant magnetoresistance effect multilayer |
| US6275411B1 (en) | 1993-07-23 | 2001-08-14 | Nonvolatile Electronics, Incorporated | Spin dependent tunneling memory |
| US6021065A (en) * | 1996-09-06 | 2000-02-01 | Nonvolatile Electronics Incorporated | Spin dependent tunneling memory |
| DE4425356C2 (de) * | 1993-09-29 | 1998-07-02 | Siemens Ag | Magnetoresistiver Sensor unter Verwendung eines Sensormaterials mit perowskitähnlicher Kristallstruktur |
| US6002553A (en) * | 1994-02-28 | 1999-12-14 | The United States Of America As Represented By The United States Department Of Energy | Giant magnetoresistive sensor |
| DE69511145T2 (de) * | 1994-03-09 | 2000-02-03 | Eastman Kodak Co., Rochester | Magnetoresistiver Wiedergabekopf mit doppeltem Spin-Ventilelement |
| US5874886A (en) * | 1994-07-06 | 1999-02-23 | Tdk Corporation | Magnetoresistance effect element and magnetoresistance device |
| FR2722918B1 (fr) * | 1994-07-21 | 1996-08-30 | Commissariat Energie Atomique | Capteur a magnetoresistance multicouche autopolarisee |
| US5648031A (en) * | 1994-07-28 | 1997-07-15 | Custom Plastics Molding, Inc. | Method of forming antislip surfaces on thermoformed products |
| JP2694806B2 (ja) * | 1994-08-29 | 1997-12-24 | 日本電気株式会社 | 磁気抵抗効果素子およびその製造方法 |
| JPH0877519A (ja) * | 1994-09-08 | 1996-03-22 | Fujitsu Ltd | 磁気抵抗効果型トランスジューサ |
| EP0731969B1 (en) * | 1994-10-05 | 1999-12-01 | Koninklijke Philips Electronics N.V. | Magnetic multilayer device including a resonant-tunneling double-barrier structure |
| JPH08180328A (ja) * | 1994-12-21 | 1996-07-12 | Fujitsu Ltd | スピンバルブ磁気抵抗効果素子及びその製造方法 |
| US5773156A (en) * | 1995-01-26 | 1998-06-30 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
| US6510031B1 (en) * | 1995-03-31 | 2003-01-21 | International Business Machines Corporation | Magnetoresistive sensor with magnetostatic coupling to obtain opposite alignment of magnetic regions |
| US7050329B2 (en) * | 1995-04-21 | 2006-05-23 | Johnson Mark B | Magnetic spin based memory with inductive write lines |
| US5652445A (en) * | 1995-04-21 | 1997-07-29 | Johnson; Mark B. | Hybrid hall effect device and method of operation |
| US6741494B2 (en) * | 1995-04-21 | 2004-05-25 | Mark B. Johnson | Magnetoelectronic memory element with inductively coupled write wires |
| US6169687B1 (en) | 1995-04-21 | 2001-01-02 | Mark B. Johnson | High density and speed magneto-electronic memory for use in computing system |
| US6140838A (en) | 1995-04-21 | 2000-10-31 | Johnson; Mark B. | High density and high speed magneto-electronic logic family |
| US6064083A (en) | 1995-04-21 | 2000-05-16 | Johnson; Mark B. | Hybrid hall effect memory device and method of operation |
| US5585986A (en) * | 1995-05-15 | 1996-12-17 | International Business Machines Corporation | Digital magnetoresistive sensor based on the giant magnetoresistance effect |
| US5701222A (en) * | 1995-09-11 | 1997-12-23 | International Business Machines Corporation | Spin valve sensor with antiparallel magnetization of pinned layers |
| JPH09205234A (ja) * | 1996-01-26 | 1997-08-05 | Nec Corp | 磁気抵抗効果素子及び磁気抵抗効果センサ |
| JP3669457B2 (ja) | 1996-03-19 | 2005-07-06 | 富士通株式会社 | 磁気記録媒体及びその製造方法 |
| US5739987A (en) * | 1996-06-04 | 1998-04-14 | Read-Rite Corporation | Magnetoresistive read transducers with multiple longitudinal stabilization layers |
| US5747997A (en) * | 1996-06-05 | 1998-05-05 | Regents Of The University Of Minnesota | Spin-valve magnetoresistance sensor having minimal hysteresis problems |
| US6166539A (en) * | 1996-10-30 | 2000-12-26 | Regents Of The University Of Minnesota | Magnetoresistance sensor having minimal hysteresis problems |
| US5793279A (en) * | 1996-08-26 | 1998-08-11 | Read-Rite Corporation | Methods and compositions for optimizing interfacial properties of magnetoresistive sensors |
| US5666248A (en) * | 1996-09-13 | 1997-09-09 | International Business Machines Corporation | Magnetizations of pinned and free layers of a spin valve sensor set by sense current fields |
| US5737157A (en) * | 1996-10-09 | 1998-04-07 | International Business Machines Corporation | Disk drive with a thermal asperity reduction circuitry using a magnetoresistive sensor |
| US5880915A (en) | 1996-10-21 | 1999-03-09 | International Business Machines Corporation | Crack resistant magnetic write head |
| AU6343898A (en) * | 1997-02-28 | 1998-09-18 | University And Community College System Of Nevada | Magnetoresistive scanning system |
| US5923505A (en) * | 1997-03-17 | 1999-07-13 | Read-Rite Corporation | Magnetoresistive sensor having a pinned soft magnetic layer |
| US6440750B1 (en) | 1997-06-10 | 2002-08-27 | Agere Systems Guardian Corporation | Method of making integrated circuit having a micromagnetic device |
| US6191495B1 (en) * | 1997-06-10 | 2001-02-20 | Lucent Technologies Inc. | Micromagnetic device having an anisotropic ferromagnetic core and method of manufacture therefor |
| US5867351A (en) * | 1997-07-25 | 1999-02-02 | International Business Machines Corporation | Spin valve read head with low moment, high coercivity pinning layer |
| JPH1196515A (ja) * | 1997-09-18 | 1999-04-09 | Fujitsu Ltd | Ｇｍｒ磁気センサ、その製造方法、および磁気ヘッド |
| DE69825031T2 (de) * | 1997-10-29 | 2005-07-21 | Koninklijke Philips Electronics N.V. | Magnetfeldsensor mit spin tunnelübergang |
| US6147900A (en) * | 1997-11-06 | 2000-11-14 | Nonvolatile Electronics, Incorporated | Spin dependent tunneling memory |
| US6337215B1 (en) * | 1997-12-01 | 2002-01-08 | International Business Machines Corporation | Magnetic particles having two antiparallel ferromagnetic layers and attached affinity recognition molecules |
| DE19854713B4 (de) * | 1998-05-13 | 2005-03-10 | Mitsubishi Electric Corp | Magnetfeld-Erfassungselement |
| JP3544141B2 (ja) | 1998-05-13 | 2004-07-21 | 三菱電機株式会社 | 磁気検出素子および磁気検出装置 |
| US6239595B1 (en) | 1998-05-13 | 2001-05-29 | Mitsubishi Denki Kabushiki Kaisha | Magnetic field sensing element |
| US6529114B1 (en) * | 1998-05-27 | 2003-03-04 | Honeywell International Inc. | Magnetic field sensing device |
| DE19843349A1 (de) * | 1998-09-22 | 2000-03-23 | Bosch Gmbh Robert | Magnetoresistives Sensorelement, insbesondere Winkelsensorelement |
| US6178074B1 (en) * | 1998-11-19 | 2001-01-23 | International Business Machines Corporation | Double tunnel junction with magnetoresistance enhancement layer |
| US6255714B1 (en) | 1999-06-22 | 2001-07-03 | Agere Systems Guardian Corporation | Integrated circuit having a micromagnetic device including a ferromagnetic core and method of manufacture therefor |
| US6421212B1 (en) | 1999-09-21 | 2002-07-16 | Read-Rite Corporation | Thin film read head structure with improved bias magnet-to-magnetoresistive element interface and method of fabrication |
| US6600637B1 (en) * | 1999-10-28 | 2003-07-29 | Seagate Technology, L.L.C. | Edge barrier to prevent spin valve sensor corrosion and improve long term reliability |
| US6404601B1 (en) | 2000-01-25 | 2002-06-11 | Read-Rite Corporation | Merged write head with magnetically isolated poletip |
| US6307774B1 (en) | 2000-03-22 | 2001-10-23 | Mark B. Johnson | Magnetoelectronic memory array |
| CN1459094A (zh) * | 2000-09-19 | 2003-11-26 | 西加特技术有限责任公司 | 具有独立消磁场的大磁阻传感器 |
| US6885527B1 (en) * | 2000-10-26 | 2005-04-26 | Headway Technologies, Inc. | Process to manufacture a top spin valve |
| US6724586B2 (en) * | 2001-03-27 | 2004-04-20 | Hitachi Global Storage Technologies Netherlands B.V. | Bias structure for magnetic tunnel junction magnetoresistive sensor |
| US20020145832A1 (en) * | 2001-04-04 | 2002-10-10 | Seagate Technology Llc | Perpendicular magnetic recording head with soft underlayer biasing |
| US6794862B2 (en) * | 2001-05-08 | 2004-09-21 | Ramot At Tel-Aviv University Ltd. | Magnetic thin film sensor based on the extraordinary hall effect |
| US6709767B2 (en) | 2001-07-31 | 2004-03-23 | Hitachi Global Storage Technologies Netherlands B.V. | In-situ oxidized films for use as cap and gap layers in a spin-valve sensor and methods of manufacture |
| DE10258860A1 (de) * | 2002-12-17 | 2004-07-15 | Robert Bosch Gmbh | Magnetoresistives Schichtsystem und Sensorelement mit diesem Schichtsystem |
| KR20050084340A (ko) * | 2002-12-18 | 2005-08-26 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 집적 회로 장치, 집적 회로 메모리 장치 및 안티-탬퍼 장치 |
| US20050013060A1 (en) * | 2003-07-14 | 2005-01-20 | International Business Machines Corporation | Magnetoresistive sensor |
| US7158353B2 (en) * | 2003-11-06 | 2007-01-02 | Seagate Technology Llc | Magnetoresistive sensor having specular sidewall layers |
| US7286392B2 (en) * | 2003-11-24 | 2007-10-23 | Nxp B.V. | Data retention indicator for magnetic memories |
| JP4538614B2 (ja) * | 2007-10-12 | 2010-09-08 | 株式会社東芝 | 磁気抵抗効果素子の設計方法及び磁気ランダムアクセスメモリの設計方法 |
| US8093892B2 (en) * | 2008-07-24 | 2012-01-10 | Infineon Technologies Ag | System with 90 degree sense layer magnetic orientation |
| US8907666B2 (en) * | 2011-09-30 | 2014-12-09 | HGST Netherlands B.V. | Magnetic bias structure for magnetoresistive sensor having a scissor structure |
| US8995073B1 (en) * | 2013-03-14 | 2015-03-31 | Seagate Technology Llc | Data storage mediums and devices having bit patterned media |
| CN104900800A (zh) * | 2014-03-03 | 2015-09-09 | 北京嘉岳同乐极电子有限公司 | 用于磁敏传感器的gmr磁性纳米多层膜 |
| US10483320B2 (en) | 2015-12-10 | 2019-11-19 | Everspin Technologies, Inc. | Magnetoresistive stack with seed region and method of manufacturing the same |
| FR3068476B1 (fr) * | 2017-06-28 | 2019-08-02 | Centre National De La Recherche Scientifique | Dispositif de mesure de champs magnetiques faibles |
| EP3884529B1 (en) * | 2018-11-19 | 2023-01-04 | Everspin Technologies, Inc. | Magnetoresistive stack with seed region and method of manufacturing the same |
| JP7375419B2 (ja) * | 2019-09-26 | 2023-11-08 | Tdk株式会社 | 磁気センサ |
| US11719772B2 (en) | 2020-04-01 | 2023-08-08 | Analog Devices International Unlimited Company | AMR (XMR) sensor with increased linear range |
| CN115265605B (zh) * | 2021-12-01 | 2024-03-12 | 苏州纳芯微电子股份有限公司 | 传感器电路及运动数据检测装置 |
| CN115077571A (zh) * | 2021-12-09 | 2022-09-20 | 苏州纳芯微电子股份有限公司 | 运动数据检测装置及其传感器电路 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US134533A (en) * | 1873-01-07 | Improvement in spring motive powers | ||
| JPH07105006B2 (ja) * | 1985-11-05 | 1995-11-13 | ソニー株式会社 | 磁気抵抗効果型磁気ヘツド |
| JP2613239B2 (ja) * | 1988-02-26 | 1997-05-21 | 株式会社日立製作所 | 磁気抵抗効果型ヘツド |
| DE3820475C1 (enExample) * | 1988-06-16 | 1989-12-21 | Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De | |
| US4914538A (en) * | 1988-08-18 | 1990-04-03 | International Business Machines Corporation | Magnetoresistive read transducer |
| FR2648942B1 (fr) * | 1989-06-27 | 1995-08-11 | Thomson Csf | Capteur a effet magnetoresistif |
| US5032945A (en) * | 1989-11-07 | 1991-07-16 | International Business Machines Corp. | Magnetic thin film structures fabricated with edge closure layers |
| US5206590A (en) * | 1990-12-11 | 1993-04-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
| JPH0536032A (ja) * | 1991-08-01 | 1993-02-12 | Hitachi Ltd | 磁気抵抗効果型ヘツド及びその製造方法 |
| FR2693021B1 (fr) * | 1992-06-26 | 1994-08-26 | Thomson Csf | Détecteur de champ magnétique. |
| US5343422A (en) * | 1993-02-23 | 1994-08-30 | International Business Machines Corporation | Nonvolatile magnetoresistive storage device using spin valve effect |
-
1993
- 1993-12-23 US US08/173,590 patent/US5452163A/en not_active Expired - Lifetime
-
1994
- 1994-09-23 TW TW083108817A patent/TW277132B/zh active
- 1994-10-31 CA CA002134711A patent/CA2134711A1/en not_active Abandoned
- 1994-11-02 JP JP6269414A patent/JP2784461B2/ja not_active Expired - Fee Related
- 1994-11-19 CN CN94118724A patent/CN1068689C/zh not_active Expired - Fee Related
- 1994-11-21 MY MYPI94003100A patent/MY116219A/en unknown
- 1994-11-23 KR KR1019940030840A patent/KR0146012B1/ko not_active Expired - Fee Related
- 1994-12-14 PH PH49556A patent/PH30835A/en unknown
- 1994-12-16 DE DE69431149T patent/DE69431149T2/de not_active Expired - Fee Related
- 1994-12-16 EP EP94119895A patent/EP0660127B1/en not_active Expired - Lifetime
- 1994-12-16 SG SG1996000132A patent/SG42849A1/en unknown
- 1994-12-16 AT AT94119895T patent/ATE221999T1/de not_active IP Right Cessation
- 1994-12-20 BR BR9405159A patent/BR9405159A/pt not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| ATE221999T1 (de) | 2002-08-15 |
| SG42849A1 (en) | 1997-10-17 |
| TW277132B (enExample) | 1996-06-01 |
| EP0660127B1 (en) | 2002-08-07 |
| MY116219A (en) | 2003-12-31 |
| DE69431149D1 (de) | 2002-09-12 |
| EP0660127A3 (en) | 1996-01-17 |
| EP0660127A2 (en) | 1995-06-28 |
| KR950020420A (ko) | 1995-07-24 |
| CN1122498A (zh) | 1996-05-15 |
| JP2784461B2 (ja) | 1998-08-06 |
| DE69431149T2 (de) | 2003-05-28 |
| US5452163A (en) | 1995-09-19 |
| PH30835A (en) | 1997-11-03 |
| CN1068689C (zh) | 2001-07-18 |
| BR9405159A (pt) | 1995-08-01 |
| JPH07210832A (ja) | 1995-08-11 |
| KR0146012B1 (ko) | 1998-10-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| FZDE | Discontinued |