CA2090039A1 - Top coat and acid catalyzed resists - Google Patents
Top coat and acid catalyzed resistsInfo
- Publication number
- CA2090039A1 CA2090039A1 CA 2090039 CA2090039A CA2090039A1 CA 2090039 A1 CA2090039 A1 CA 2090039A1 CA 2090039 CA2090039 CA 2090039 CA 2090039 A CA2090039 A CA 2090039A CA 2090039 A1 CA2090039 A1 CA 2090039A1
- Authority
- CA
- Canada
- Prior art keywords
- acid
- polymeric film
- resist
- film forming
- protective topcoat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/092—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by backside coating or layers, by lubricating-slip layers or means, by oxygen barrier layers or by stripping-release layers or means
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US58727390A | 1990-09-18 | 1990-09-18 | |
US587,273 | 1990-09-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA2090039A1 true CA2090039A1 (en) | 1992-03-19 |
Family
ID=24349129
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA 2090039 Abandoned CA2090039A1 (en) | 1990-09-18 | 1990-12-21 | Top coat and acid catalyzed resists |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0556177A1 (de) |
JP (1) | JPH05507154A (de) |
CA (1) | CA2090039A1 (de) |
WO (1) | WO1992005474A1 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5506090A (en) * | 1994-09-23 | 1996-04-09 | Minnesota Mining And Manufacturing Company | Process for making shoot and run printing plates |
KR100401116B1 (ko) * | 1999-06-03 | 2003-10-10 | 주식회사 하이닉스반도체 | 아민오염방지 물질 및 이를 이용한 미세패턴 형성방법 |
US6984482B2 (en) | 1999-06-03 | 2006-01-10 | Hynix Semiconductor Inc. | Top-coating composition for photoresist and process for forming fine pattern using the same |
DE102004030861A1 (de) * | 2004-06-25 | 2006-01-19 | Infineon Technologies Ag | Verfahren zum Strukturieren eines Halbleitersubstrats unter Verwendung einer Schutzschicht, die das Ausgasen während der Belichtung verringert oder verhindert |
EP1818723B1 (de) | 2004-12-03 | 2011-05-04 | JSR Corporation | Zusammensetzung zur bildung eines antireflexionsfilms, beschichtetes produkt und verfahren zur herstellung einer resiststruktur |
JP4595606B2 (ja) | 2005-03-17 | 2010-12-08 | Jsr株式会社 | 反射防止膜形成用組成物、積層体およびレジストパターンの形成方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50152803A (de) * | 1974-05-29 | 1975-12-09 | ||
JPS57183030A (en) * | 1981-05-07 | 1982-11-11 | Toshiba Corp | Manufacture of semiconductor device |
DE3715790A1 (de) * | 1987-05-12 | 1988-11-24 | Hoechst Ag | Strahlungsempfindliches aufzeichnungsmaterial |
-
1990
- 1990-12-21 EP EP19910906782 patent/EP0556177A1/de not_active Withdrawn
- 1990-12-21 JP JP91507106A patent/JPH05507154A/ja active Pending
- 1990-12-21 WO PCT/US1990/007618 patent/WO1992005474A1/en not_active Application Discontinuation
- 1990-12-21 CA CA 2090039 patent/CA2090039A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO1992005474A1 (en) | 1992-04-02 |
EP0556177A1 (de) | 1993-08-25 |
JPH05507154A (ja) | 1993-10-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5240812A (en) | Top coat for acid catalyzed resists | |
US5498506A (en) | Positive-acting radiation-sensitive mixture and recording material produced therewith | |
US4722881A (en) | Radiation-sensitive resist composition with an admixture of cis-(1,3,5,7-tetrahydroxy)-1,3,5,7-tetraphenylcyclotetrasiloxane and a polysilsesquioxane | |
KR100692230B1 (ko) | 전자 빔 노광에 의한 193㎚ 감광성 포토레지스트 재료의 변형 | |
KR20030023603A (ko) | 레지스트 구조물의 형성 방법 | |
US20050191562A1 (en) | Method of increasing the shelf life of a photomask substrate | |
KR100195287B1 (ko) | 수용성 막형성 조성물 | |
KR20010015280A (ko) | 포토레지스트패턴의 형성방법 | |
EP0124265A2 (de) | Bilderzeugungsverfahren mit negativen Schutzschichten | |
JP2004266270A (ja) | 微細パターン形成方法 | |
JPH08220741A (ja) | マイクロリソグラフィ構造 | |
US6610616B2 (en) | Method for forming micro-pattern of semiconductor device | |
CA2090039A1 (en) | Top coat and acid catalyzed resists | |
CA2074791A1 (en) | Negative-working radiation-sensitive mixture and radiation-sensitive recording material produced therewith | |
KR100599146B1 (ko) | 포토레지스트용 반사 방지 코팅재 | |
US4612270A (en) | Two-layer negative resist | |
US5258267A (en) | Process for forming resist pattern | |
JPS6037548A (ja) | 照射線反応ネガレジストの形成方法 | |
Hien et al. | Thin film imaging with CARL© photoresist at the optical resolution limit | |
KR20000029769A (ko) | 2,4-디니트로-1-나프톨을함유하는양화작용성포토레지스트조성물 | |
US5981143A (en) | Chemically treated photoresist for withstanding ion bombarded processing | |
US5962196A (en) | Deep ultraviolet light photoresist processing | |
US5756262A (en) | Method for forming pattern | |
JPH04221814A (ja) | パターン形成方法 | |
EP0197519A2 (de) | Verfahren zur Herstellung von Maskierung- und Schutzlackstrukturen |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
FZDE | Dead |