CA2070436A1 - Diamant polycristallin isotopiquement pur de carbone-12 ou de carbone-13, a proprietes thermiques ameliorees - Google Patents
Diamant polycristallin isotopiquement pur de carbone-12 ou de carbone-13, a proprietes thermiques amelioreesInfo
- Publication number
- CA2070436A1 CA2070436A1 CA002070436A CA2070436A CA2070436A1 CA 2070436 A1 CA2070436 A1 CA 2070436A1 CA 002070436 A CA002070436 A CA 002070436A CA 2070436 A CA2070436 A CA 2070436A CA 2070436 A1 CA2070436 A1 CA 2070436A1
- Authority
- CA
- Canada
- Prior art keywords
- carbon
- polycrystalline diamond
- diamond
- isotopically
- thermal conductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 92
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 87
- OKTJSMMVPCPJKN-IGMARMGPSA-N Carbon-12 Chemical compound [12C] OKTJSMMVPCPJKN-IGMARMGPSA-N 0.000 title claims abstract description 23
- OKTJSMMVPCPJKN-OUBTZVSYSA-N Carbon-13 Chemical compound [13C] OKTJSMMVPCPJKN-OUBTZVSYSA-N 0.000 title claims abstract description 23
- 238000005229 chemical vapour deposition Methods 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 7
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 6
- 230000000155 isotopic effect Effects 0.000 abstract description 6
- 239000012535 impurity Substances 0.000 abstract description 4
- 238000005245 sintering Methods 0.000 abstract description 3
- 230000003116 impacting effect Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical class C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 5
- CBQYNPHHHJTCJS-UHFFFAOYSA-N Alline Chemical compound C1=CC=C2C3(O)CCN(C)C3NC2=C1 CBQYNPHHHJTCJS-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000008246 gaseous mixture Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000001534 heteroepitaxy Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- SYOKIDBDQMKNDQ-XWTIBIIYSA-N vildagliptin Chemical compound C1C(O)(C2)CC(C3)CC1CC32NCC(=O)N1CCC[C@H]1C#N SYOKIDBDQMKNDQ-XWTIBIIYSA-N 0.000 description 2
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 241001320695 Hermas Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 101100208721 Mus musculus Usp5 gene Proteins 0.000 description 1
- 241001274197 Scatophagus argus Species 0.000 description 1
- -1 acctylene Chemical compound 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229940099990 ogen Drugs 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 101150115956 slc25a26 gene Proteins 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/062—Diamond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/0645—Boronitrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/0655—Diamond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/066—Boronitrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
- B01J2203/0685—Crystal sintering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US72701691A | 1991-07-08 | 1991-07-08 | |
| US727,016 | 1991-07-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2070436A1 true CA2070436A1 (fr) | 1993-01-09 |
Family
ID=24920984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002070436A Abandoned CA2070436A1 (fr) | 1991-07-08 | 1992-06-04 | Diamant polycristallin isotopiquement pur de carbone-12 ou de carbone-13, a proprietes thermiques ameliorees |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH05194089A (fr) |
| CA (1) | CA2070436A1 (fr) |
| GB (1) | GB2257427B (fr) |
| ZA (1) | ZA924614B (fr) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11100297A (ja) * | 1997-08-01 | 1999-04-13 | Tokyo Gas Co Ltd | ホウ素をドープした同位体ダイヤモンド及びその製造方法 |
| JP5891636B2 (ja) * | 2011-07-28 | 2016-03-23 | 住友電気工業株式会社 | 多結晶ダイヤモンドおよびその製造方法 |
| JP5891635B2 (ja) * | 2011-07-28 | 2016-03-23 | 住友電気工業株式会社 | 多結晶ダイヤモンドおよびその製造方法 |
| JP5891634B2 (ja) * | 2011-07-28 | 2016-03-23 | 住友電気工業株式会社 | 多結晶ダイヤモンドおよびその製造方法 |
| CN103732535B (zh) * | 2011-07-28 | 2016-07-06 | 住友电气工业株式会社 | 多晶金刚石及其制造方法 |
| JP6772711B2 (ja) * | 2016-09-20 | 2020-10-21 | 住友電気工業株式会社 | 半導体積層構造体および半導体デバイス |
| CN117396431A (zh) * | 2021-06-11 | 2024-01-12 | 住友电工硬质合金株式会社 | 复合多晶体以及具备复合多晶体的工具 |
| CN117396430A (zh) * | 2021-06-11 | 2024-01-12 | 住友电工硬质合金株式会社 | 金刚石多晶体以及具备金刚石多晶体的工具 |
| JP7180053B1 (ja) * | 2021-06-11 | 2022-11-30 | 住友電工ハードメタル株式会社 | ダイヤモンド多結晶体、及びダイヤモンド多結晶体を備える工具 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0206820A3 (fr) * | 1985-06-27 | 1987-10-28 | De Beers Industrial Diamond Division (Proprietary) Limited | Synthèse de diamant |
| GB8903793D0 (en) * | 1989-02-20 | 1989-04-05 | Plessey Co Plc | Diamond synthesis |
-
1992
- 1992-06-04 CA CA002070436A patent/CA2070436A1/fr not_active Abandoned
- 1992-06-23 ZA ZA924614A patent/ZA924614B/xx unknown
- 1992-07-07 JP JP4179494A patent/JPH05194089A/ja not_active Withdrawn
- 1992-07-07 GB GB9214434A patent/GB2257427B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| GB9214434D0 (en) | 1992-08-19 |
| JPH05194089A (ja) | 1993-08-03 |
| ZA924614B (en) | 1993-12-23 |
| GB2257427B (en) | 1995-05-24 |
| GB2257427A (en) | 1993-01-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Liu et al. | Diamond chemical vapor deposition: nucleation and early growth stages | |
| US5540904A (en) | Isotopically-pure carbon-12 or carbon-13 polycrystalline diamond possessing enhanced thermal conductivity | |
| Zhu et al. | Growth and characterization of diamond films on nondiamond substrates for electronic applications | |
| May | CVD diamond: a new technology for the future? | |
| US5298286A (en) | Method for fabricating diamond films on nondiamond substrates and related structures | |
| US5849413A (en) | Oriented diamond film structures on nondiamond substrates | |
| US5328548A (en) | Method of synthesizing single diamond crystals of high thermal conductivity | |
| US7258741B2 (en) | System and method for producing synthetic diamond | |
| US6162412A (en) | Chemical vapor deposition method of high quality diamond | |
| US5110579A (en) | Transparent diamond films and method for making | |
| AU2001281404B2 (en) | System and method for producing synthetic diamond | |
| Stiegler et al. | Low temperature limits of diamond film growth by microwave plasma-assisted CVD | |
| CA2070436A1 (fr) | Diamant polycristallin isotopiquement pur de carbone-12 ou de carbone-13, a proprietes thermiques ameliorees | |
| Pickrell et al. | Near-interface characterization of diamond films on silica and silicon | |
| EP0348026A1 (fr) | Croissance du diamant sur un substrat à l'aide de l'énergie à micro-ondes | |
| Harker et al. | Temperature and reactive etching effects on the microstructure of microwave plasma deposited diamond films | |
| Tsui et al. | Properties of AlxGa1− xAs (xAl≂ 0.3) grown by molecular‐beam epitaxy on misoriented substrates | |
| US7338555B2 (en) | Highly crystalline aluminum nitride multi-layered substrate and production process thereof | |
| Vook | Nucleation and growth of thin films | |
| JPH08151295A (ja) | 単結晶ダイヤモンド膜気相合成用基板の製造方法 | |
| Yang et al. | The formation of epitaxial hexagonal boron nitride on nickel substrates | |
| Callahan et al. | Synthesis and growth of gallium nitride by the chemical vapor reaction process (CVRP) | |
| IE921375A1 (en) | Isotopically-pure carbon-12 or carbon-13 polycrystalline¹diamond possessing enhanced thermal conductivity | |
| Kshirsagar et al. | Gradual transitions in morphology of diamond films grown by using N2 admixtures of CH4+ H2 gas in a hot filament assisted chemical vapour deposition system | |
| Osaka et al. | Influences of substrate surface structures and water vapor on the nucleation, epitaxy and graphoepitaxy of tin thin films grown on potassium chloride substrates |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Dead |