CA2005255A1 - Transducteur photoelectrique a contact - Google Patents

Transducteur photoelectrique a contact

Info

Publication number
CA2005255A1
CA2005255A1 CA2005255A CA2005255A CA2005255A1 CA 2005255 A1 CA2005255 A1 CA 2005255A1 CA 2005255 A CA2005255 A CA 2005255A CA 2005255 A CA2005255 A CA 2005255A CA 2005255 A1 CA2005255 A1 CA 2005255A1
Authority
CA
Canada
Prior art keywords
silicon
layer
photoconductive layer
mainly
type photoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2005255A
Other languages
English (en)
Other versions
CA2005255C (fr
Inventor
Katsuhiko Hayashi
Minori Yamaguchi
Takehisa Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Katsuhiko Hayashi
Minori Yamaguchi
Takehisa Nakayama
Kanegafuchi Chemical Industry Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63315972A external-priority patent/JPH0821725B2/ja
Priority claimed from JP1066749A external-priority patent/JPH02244773A/ja
Priority claimed from JP1066750A external-priority patent/JPH02246169A/ja
Priority claimed from JP1066751A external-priority patent/JPH02246170A/ja
Application filed by Katsuhiko Hayashi, Minori Yamaguchi, Takehisa Nakayama, Kanegafuchi Chemical Industry Co., Ltd. filed Critical Katsuhiko Hayashi
Publication of CA2005255A1 publication Critical patent/CA2005255A1/fr
Application granted granted Critical
Publication of CA2005255C publication Critical patent/CA2005255C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CA002005255A 1988-12-14 1989-12-12 Transducteur photoelectrique a contact Expired - Fee Related CA2005255C (fr)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP63315972A JPH0821725B2 (ja) 1988-12-14 1988-12-14 光センサー
JP63-315972 1988-12-14
JP1066749A JPH02244773A (ja) 1989-03-17 1989-03-17 光センサー
JP1-66749 1989-03-17
JP1-66751 1989-03-17
JP1066750A JPH02246169A (ja) 1989-03-17 1989-03-17 光センサー
JP1066751A JPH02246170A (ja) 1989-03-17 1989-03-17 光センサー
JP1-66750 1989-03-17

Publications (2)

Publication Number Publication Date
CA2005255A1 true CA2005255A1 (fr) 1990-06-14
CA2005255C CA2005255C (fr) 1994-01-18

Family

ID=27464761

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002005255A Expired - Fee Related CA2005255C (fr) 1988-12-14 1989-12-12 Transducteur photoelectrique a contact

Country Status (4)

Country Link
US (1) US5115123A (fr)
EP (1) EP0402480A4 (fr)
CA (1) CA2005255C (fr)
WO (1) WO1990007195A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997018447A1 (fr) * 1995-11-14 1997-05-22 Tom Konstantin Abramovich Procede de mesure de rayonnement ultraviolet, dispositif de mise en oeuvre et photo-convertisseur
US6586332B1 (en) * 2001-10-16 2003-07-01 Lsi Logic Corporation Deep submicron silicide blocking

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4348611A (en) * 1978-03-02 1982-09-07 Wolfgang Ruppel Ferroelectric or pyroelectric sensor utilizing a sodium nitrite layer
US4557987A (en) * 1980-12-23 1985-12-10 Canon Kabushiki Kaisha Photoconductive member having barrier layer and amorphous silicon charge generation and charge transport layers
JPS58219561A (ja) * 1982-06-15 1983-12-21 Konishiroku Photo Ind Co Ltd 記録体
JPS6083957A (ja) * 1983-10-13 1985-05-13 Sharp Corp 電子写真感光体
JPS61104679A (ja) * 1984-10-29 1986-05-22 Matsushita Electric Ind Co Ltd 光導電体
JPH0624250B2 (ja) * 1984-11-01 1994-03-30 セイコーエプソン株式会社 固体撮像素子
FR2586327B1 (fr) * 1985-08-14 1987-11-20 Thomson Csf Procede de fabrication d'un detecteur d'image lumineuse et detecteur lineaire d'images obtenu par ce procede
DE3802365A1 (de) * 1987-01-27 1988-10-27 Ricoh Kk Amorpher siliziumphotosensor

Also Published As

Publication number Publication date
EP0402480A4 (en) 1991-04-17
WO1990007195A1 (fr) 1990-06-28
CA2005255C (fr) 1994-01-18
EP0402480A1 (fr) 1990-12-19
US5115123A (en) 1992-05-19

Similar Documents

Publication Publication Date Title
EP0372929A3 (fr) Couches empilées électriquement conductives et transparentes
AU8001487A (en) Heterojunction p-i-n photovoltaic cell
CA2056087A1 (fr) Dispositif de conversion photo-electrique et appareil de traitement d'informations utilisant ce dispositif
EP1465259A3 (fr) Convertisseur photo- électrique de rayons X, sa méthode de commande et système comprenant ce convertisseur photo- électrique de rayons X
CA2238952A1 (fr) Diode a semi-conducteurs a contact a faible resistance
CA2116793A1 (fr) Recepteur de lumiere du type p-i-n et sa methode de fabrication et circuit integre opto-electronique
AU3519395A (en) Three-colour sensor
CA2058778A1 (fr) Dispositif de conversion photoelectrique et appareil de traitement d'images utilisant ce dispositif
CA2063964A1 (fr) Dispositif a fine pellicule semi-conductrice
EP0627771A4 (fr) Element photodetecteur monolithique a reseau cristallin deforme, comportant une structure de contact lateral.
CA2005255A1 (fr) Transducteur photoelectrique a contact
EP0486327A3 (en) Semiconductor optical devices with pn current blocking layers of wide-band gap materials
CA2059176A1 (fr) Dispositif de conversion photoelectrique et appareil de traitement d'images utilisant ce dispositif
CA2119176A1 (fr) Detecteur de lumiere a semiconducteur
JPS55121686A (en) Photovoltaic device
EP0310353A3 (fr) Détecteur à couches minces à gain élevé
JPS5739569A (en) Solid state image pickup device
ATE306120T1 (de) Schichtenfolge sowie eine solche enthaltendes bauelement
JPS56125881A (en) Optical semiconductor element
JPS5743477A (en) Photovoltaic device
JPS57116346A (en) Photoconductive material
EP0391420A3 (fr) Structure semi-conductrice résistant à des radiations
Kaneko et al. Correlation of photoelectric properties of a-Si: H image sensor with compositional distribution of Si3N4 blocking interface
JPS57116347A (en) Photoconductive material
JPS61290778A (ja) 光電変換素子

Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed