CA1252695A - Deposition technique - Google Patents

Deposition technique

Info

Publication number
CA1252695A
CA1252695A CA000474332A CA474332A CA1252695A CA 1252695 A CA1252695 A CA 1252695A CA 000474332 A CA000474332 A CA 000474332A CA 474332 A CA474332 A CA 474332A CA 1252695 A CA1252695 A CA 1252695A
Authority
CA
Canada
Prior art keywords
gas flow
source gas
solid
indium
flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000474332A
Other languages
English (en)
French (fr)
Inventor
Herbert M. Cox
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Application granted granted Critical
Publication of CA1252695A publication Critical patent/CA1252695A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
CA000474332A 1984-02-17 1985-02-14 Deposition technique Expired CA1252695A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58132684A 1984-02-17 1984-02-17
US581,326 1984-02-17

Publications (1)

Publication Number Publication Date
CA1252695A true CA1252695A (en) 1989-04-18

Family

ID=24324753

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000474332A Expired CA1252695A (en) 1984-02-17 1985-02-14 Deposition technique

Country Status (5)

Country Link
EP (1) EP0172876B1 (de)
JP (1) JP2545356B2 (de)
CA (1) CA1252695A (de)
DE (1) DE3565865D1 (de)
WO (1) WO1985003727A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0645886B2 (ja) * 1985-12-16 1994-06-15 キヤノン株式会社 堆積膜形成法
JPH0691020B2 (ja) * 1986-02-14 1994-11-14 日本電信電話株式会社 気相成長方法および装置
US4890574A (en) * 1987-01-20 1990-01-02 Gte Laboratories Incorporated Internal reactor for chemical vapor deposition
DE10247921A1 (de) * 2002-10-10 2004-04-22 Aixtron Ag Hydrid VPE Reaktor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4314873A (en) * 1977-07-05 1982-02-09 The United States Of America As Represented By The Secretary Of The Navy Method for depositing heteroepitaxially InP on GaAs semi-insulating substrates
JPS6344988Y2 (de) * 1979-12-26 1988-11-22
JPS6060714A (ja) * 1983-09-14 1985-04-08 Nec Corp Ｉ−ｖ族化合物半導体の気相エピタキシャル成長方法

Also Published As

Publication number Publication date
EP0172876A1 (de) 1986-03-05
WO1985003727A1 (en) 1985-08-29
JP2545356B2 (ja) 1996-10-16
JPS61501237A (ja) 1986-06-19
DE3565865D1 (en) 1988-12-01
EP0172876B1 (de) 1988-10-26

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Legal Events

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