CA1252228C - - Google Patents

Info

Publication number
CA1252228C
CA1252228C CA 484658 CA484658A CA1252228C CA 1252228 C CA1252228 C CA 1252228C CA 484658 CA484658 CA 484658 CA 484658 A CA484658 A CA 484658A CA 1252228 C CA1252228 C CA 1252228C
Authority
CA
Canada
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA 484658
Other versions
CA1232373A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24497338&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CA1252228(C) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed filed Critical
Priority to CA000553493A priority Critical patent/CA1252228A/en
Publication of CA1232373A publication Critical patent/CA1232373A/en
Application granted granted Critical
Publication of CA1252228C publication Critical patent/CA1252228C/xx
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
CA000484658A 1984-06-21 1985-06-20 HIGH PENETRATION ULTRAVIOLET LITHOGRAPHY Expired CA1232373A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA000553493A CA1252228A (en) 1984-06-21 1987-12-03 Deep-uv lithography

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US62324784A 1984-06-21 1984-06-21

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CA000553493A Division CA1252228A (en) 1984-06-21 1987-12-03 Deep-uv lithography

Publications (2)

Publication Number Publication Date
CA1232373A CA1232373A (en) 1988-02-02
CA1252228C true CA1252228C (xx) 1989-04-04

Family

ID=24497338

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000484658A Expired CA1232373A (en) 1984-06-21 1985-06-20 HIGH PENETRATION ULTRAVIOLET LITHOGRAPHY

Country Status (6)

Country Link
US (1) US4703166A (xx)
EP (1) EP0183827B1 (xx)
JP (2) JPS61502507A (xx)
CA (1) CA1232373A (xx)
DE (2) DE3583924D1 (xx)
WO (1) WO1986000427A1 (xx)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
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GB2153543B (en) * 1983-12-28 1988-09-01 Canon Kk A projection exposure apparatus
US5171965A (en) * 1984-02-01 1992-12-15 Canon Kabushiki Kaisha Exposure method and apparatus
US5091744A (en) * 1984-02-13 1992-02-25 Canon Kabushiki Kaisha Illumination optical system
US4811055A (en) * 1984-02-27 1989-03-07 Canon Kabushiki Kaisha Projection exposure apparatus
US4713518A (en) * 1984-06-08 1987-12-15 Semiconductor Energy Laboratory Co., Ltd. Electronic device manufacturing methods
US4856018A (en) * 1986-01-22 1989-08-08 Kabushiki Kaisha Komatsu Seisakusho Light source for reduced projection
JP2650895B2 (ja) * 1986-07-02 1997-09-10 松下電器産業株式会社 露光装置および露光方法
JPH0670957B2 (ja) * 1986-12-01 1994-09-07 キヤノン株式会社 露光装置
JPS63193130A (ja) * 1987-02-05 1988-08-10 Canon Inc 光量制御装置
JP2571054B2 (ja) * 1987-04-28 1997-01-16 キヤノン株式会社 露光装置及び素子製造方法
JPS63280483A (ja) * 1987-05-13 1988-11-17 Canon Inc レーザ光の波長検出方法
JPS6482527A (en) * 1987-09-25 1989-03-28 Nikon Corp Exposure device
JPH0628227B2 (ja) * 1987-10-06 1994-04-13 株式会社日立製作所 半導体露光装置
DE3733823A1 (de) * 1987-10-07 1989-04-20 Zeiss Carl Fa Verfahren zur kompensation des einflusses von umweltparametern auf die abbildungseigenschaften eines optischen systems
JPH01106426A (ja) * 1987-10-19 1989-04-24 Canon Inc 露光装置
JPH01119020A (ja) * 1987-10-30 1989-05-11 Canon Inc 露光装置
US4851656A (en) * 1988-01-11 1989-07-25 The Gerber Scientific Instrument Company Method and apparatus for enhancing optical photoplotter accuracy
US5276725A (en) * 1988-05-10 1994-01-04 Canon Kabushiki Kaisha Exposure system
US4847479A (en) * 1988-06-06 1989-07-11 Trw Inc. System for controlling the wavelength and colinearity of multiplexed laser beams
JP2631395B2 (ja) * 1988-09-09 1997-07-16 キヤノン株式会社 露光装置の制御方法
WO1992012820A1 (en) * 1991-01-17 1992-08-06 United Distillers Plc Dynamic laser marking
US5274420A (en) * 1992-04-20 1993-12-28 International Business Machines Corporation Beamsplitter type lens elements with pupil-plane stops for lithographic systems
US5231536A (en) * 1992-05-01 1993-07-27 Xrl, Inc. Robust, LED illumination system for OCR of indicia on a substrate
US5737122A (en) * 1992-05-01 1998-04-07 Electro Scientific Industries, Inc. Illumination system for OCR of indicia on a substrate
US5851725A (en) * 1993-01-26 1998-12-22 The United States Of America As Represented By The Secretary Of Commerce Exposure of lithographic resists by metastable rare gas atoms
US5355306A (en) * 1993-09-30 1994-10-11 Motorola, Inc. Alignment system and method of alignment by symmetrical and asymmetrical analysis
JP3283767B2 (ja) * 1996-10-02 2002-05-20 キヤノン株式会社 露光装置およびデバイス製造方法
US5982475A (en) * 1997-09-30 1999-11-09 Tropel Corporation Raster-scan photolithographic reduction system
US6089525A (en) * 1997-10-07 2000-07-18 Ultratech Stepper, Inc. Six axis active vibration isolation and payload reaction force compensation system
DE19959742A1 (de) * 1999-12-10 2001-06-13 Zeiss Carl System zur Kompensation von Richtungs- und Positionsschwankungen eines von einem Laser erzeugten Lichtes
US6791592B2 (en) 2000-04-18 2004-09-14 Laserink Printing a code on a product
JP4497650B2 (ja) * 2000-04-26 2010-07-07 キヤノン株式会社 レーザ発振装置、露光装置および半導体デバイス製造方法
DE10143385C2 (de) * 2001-09-05 2003-07-17 Zeiss Carl Projektionsbelichtungsanlage
US7046267B2 (en) 2003-12-19 2006-05-16 Markem Corporation Striping and clipping correction
US7394479B2 (en) 2005-03-02 2008-07-01 Marken Corporation Pulsed laser printing
US10096967B2 (en) 2016-12-07 2018-10-09 Cymer, Llc Wavelength control system for pulse-by-pulse wavelength target tracking in DUV light source
CN111095111A (zh) * 2017-09-11 2020-05-01 Asml荷兰有限公司 光刻装置和方法
JP7044888B2 (ja) * 2018-01-11 2022-03-30 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ方法および装置
US10583668B2 (en) 2018-08-07 2020-03-10 Markem-Imaje Corporation Symbol grouping and striping for wide field matrix laser marking
WO2023196087A1 (en) * 2022-04-08 2023-10-12 Cymer, Llc Apparatus for and method of vibration cancellation for laser wavelength and bandwidth stability

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US3689159A (en) * 1970-06-11 1972-09-05 Mitsubishi Electric Corp Laser processing apparatus
US4408885A (en) * 1971-03-22 1983-10-11 Kasper Instruments, Inc. Apparatus for the automatic alignment of two superimposed objects, e.g. a semiconductor wafer and mask
US3902036A (en) * 1974-05-02 1975-08-26 Western Electric Co Control system using multiplexed laser beams
US3947688A (en) * 1974-08-26 1976-03-30 Oregon Graduate Center For Study And Research Method of generating tunable coherent ultraviolet light at wavelengths below 2500 A
FR2406236A1 (fr) * 1976-12-10 1979-05-11 Thomson Csf Dispositif optique a source coherente pour le transfert rapide de motifs sur substrats, applique a la realisation de composants et circuits a microstructures
DE2905636C2 (de) * 1979-02-14 1985-06-20 Censor Patent- Und Versuchs-Anstalt, Vaduz Verfahren zum Kopieren von Masken auf ein Werkstück
FR2455298A1 (fr) * 1979-04-23 1980-11-21 Thomson Csf Dispositif illuminateur destine a fournir un faisceau d'eclairement divergent a partir d'une zone predeterminee d'un plan et systeme de transfert de motifs comprenant un tel dispositif
US4304467A (en) * 1979-05-29 1981-12-08 International Business Machines Corporation Focussed laser beam optical system
US4240746A (en) * 1979-08-06 1980-12-23 Her Majesty The Queen In Right Of Canada, As Represented By The Minister Of National Defense System for transmitter frequency control in coherent ladar
JPS5628868A (en) * 1979-08-16 1981-03-23 Fuji Photo Film Co Ltd Form slide displacement accomodation device in light beam recording device
JPS57198631A (en) * 1981-05-29 1982-12-06 Ibm Exposing method and device
JPS5831305A (ja) * 1981-08-20 1983-02-24 Toshiba Corp レ−ザ光のパタ−ン成形装置
DE3147355C2 (de) * 1981-11-30 1986-05-07 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Justieren des Bezugssystems eines vorprogrammierbaren Strahlenablenksystems eines im Riesenimpulsbetrieb arbeitenden Lasergerätes
US4414059A (en) * 1982-12-09 1983-11-08 International Business Machines Corporation Far UV patterning of resist materials
DE3318978A1 (de) * 1983-05-25 1984-11-29 Werner Dr. Vaduz Tabarelli Einrichtung zum projektionskopieren von masken auf ein werkstueck
US4532402A (en) * 1983-09-02 1985-07-30 Xrl, Inc. Method and apparatus for positioning a focused beam on an integrated circuit
JPS60117735A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd パタ−ン転写方法
JPS60140310A (ja) * 1983-12-28 1985-07-25 Canon Inc 投影レンズ
DE3406677A1 (de) * 1984-02-24 1985-09-05 Fa. Carl Zeiss, 7920 Heidenheim Einrichtung zur kompensation der auswanderung eines laserstrahls
JPS60242421A (ja) * 1984-05-17 1985-12-02 Canon Inc 露光装置
JPS60257521A (ja) * 1984-06-04 1985-12-19 Nippon Telegr & Teleph Corp <Ntt> パタン形成用露光装置
US4540867A (en) * 1984-06-25 1985-09-10 Motorola, Inc. Linearized scanning system and method for an energy beam

Also Published As

Publication number Publication date
DE3588012T2 (de) 1995-09-14
WO1986000427A1 (en) 1986-01-16
DE3588012D1 (de) 1995-05-24
CA1232373A (en) 1988-02-02
EP0183827A1 (en) 1986-06-11
JP2760740B2 (ja) 1998-06-04
US4703166A (en) 1987-10-27
JPS61502507A (ja) 1986-10-30
EP0183827B1 (en) 1991-08-28
JPH0750253A (ja) 1995-02-21
DE3583924D1 (de) 1991-10-02

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Legal Events

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