CA1244969A - Method for diffusing p-type material using boron disks - Google Patents

Method for diffusing p-type material using boron disks

Info

Publication number
CA1244969A
CA1244969A CA000521720A CA521720A CA1244969A CA 1244969 A CA1244969 A CA 1244969A CA 000521720 A CA000521720 A CA 000521720A CA 521720 A CA521720 A CA 521720A CA 1244969 A CA1244969 A CA 1244969A
Authority
CA
Canada
Prior art keywords
disks
wafers
boron
approximately
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000521720A
Other languages
English (en)
French (fr)
Inventor
Manon Plante
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microsemi Semiconductor ULC
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CA000521720A priority Critical patent/CA1244969A/en
Priority to GB8723730A priority patent/GB2197125B/en
Priority to JP62267582A priority patent/JPH01169924A/ja
Priority to US07/112,147 priority patent/US4857480A/en
Application granted granted Critical
Publication of CA1244969A publication Critical patent/CA1244969A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P32/12—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H10P32/171—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CA000521720A 1986-10-29 1986-10-29 Method for diffusing p-type material using boron disks Expired CA1244969A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CA000521720A CA1244969A (en) 1986-10-29 1986-10-29 Method for diffusing p-type material using boron disks
GB8723730A GB2197125B (en) 1986-10-29 1987-10-09 Method for diffusing p-type material using boron disks
JP62267582A JPH01169924A (ja) 1986-10-29 1987-10-21 不純物拡散方法
US07/112,147 US4857480A (en) 1986-10-29 1987-10-26 Method for diffusing P-type material using boron disks

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA000521720A CA1244969A (en) 1986-10-29 1986-10-29 Method for diffusing p-type material using boron disks

Publications (1)

Publication Number Publication Date
CA1244969A true CA1244969A (en) 1988-11-15

Family

ID=4134242

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000521720A Expired CA1244969A (en) 1986-10-29 1986-10-29 Method for diffusing p-type material using boron disks

Country Status (4)

Country Link
US (1) US4857480A (OSRAM)
JP (1) JPH01169924A (OSRAM)
CA (1) CA1244969A (OSRAM)
GB (1) GB2197125B (OSRAM)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270224A (en) * 1988-03-11 1993-12-14 Fujitsu Limited Method of manufacturing a semiconductor device having a region doped to a level exceeding the solubility limit
EP0332101B1 (en) * 1988-03-11 1997-06-04 Fujitsu Limited Semiconductor device having a region doped to a level exceeding the solubility limit
US5518937A (en) * 1988-03-11 1996-05-21 Fujitsu Limited Semiconductor device having a region doped to a level exceeding the solubility limit
JP2583681B2 (ja) * 1991-03-20 1997-02-19 信越半導体株式会社 半導体ウェーハへの硼素拡散方法
US5857889A (en) * 1996-03-27 1999-01-12 Thermoceramix, Llc Arc Chamber for an ion implantation system
US6022258A (en) * 1996-03-27 2000-02-08 Thermoceramix, Llc ARC chamber for an ion implantation system
US5914494A (en) * 1996-03-27 1999-06-22 Thermoceramix, Llc Arc chamber for an ion implantation system
US6239440B1 (en) 1996-03-27 2001-05-29 Thermoceramix, L.L.C. Arc chamber for an ion implantation system
US5972784A (en) * 1997-04-24 1999-10-26 Georgia Tech Research Corporation Arrangement, dopant source, and method for making solar cells
US6555407B1 (en) 1999-10-26 2003-04-29 Zarlink Semiconductor Ab Method for the controlled oxidiation of materials
GB2355850A (en) * 1999-10-26 2001-05-02 Mitel Semiconductor Ab Forming oxide layers in semiconductor layers

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA721882A (en) * 1965-11-16 Motorola Semiconductor diffusion method
US3374125A (en) * 1965-05-10 1968-03-19 Rca Corp Method of forming a pn junction by vaporization
GB1143907A (en) * 1967-07-10 1969-02-26 Marconi Co Ltd Improvements in or relating to methods of manufacturing semiconductor devices
US3644154A (en) * 1969-06-09 1972-02-22 Ibm Method of fabricating semiconductor structures with reduced crystallographic defects
GB1332994A (en) * 1971-01-11 1973-10-10 Mullard Ltd Method of diffusing an impurity into a semiconductor body
US3849344A (en) * 1972-03-31 1974-11-19 Carborundum Co Solid diffusion sources containing phosphorus and silicon
JPS5525486B2 (OSRAM) * 1972-07-07 1980-07-07
JPS49108969A (OSRAM) * 1973-02-07 1974-10-16
JPS49114355A (OSRAM) * 1973-02-28 1974-10-31
JPS6011457B2 (ja) * 1973-04-02 1985-03-26 株式会社日立製作所 デイポジシヨン法
US3997351A (en) * 1974-01-07 1976-12-14 Owens-Illinois, Inc. Glass-ceramic dopant host for vapor phase transport of B2 O3
JPS59177923A (ja) * 1983-03-28 1984-10-08 Matsushita Electronics Corp 半導体への硼素拡散方法
JPS62101026A (ja) * 1985-10-26 1987-05-11 Shin Etsu Chem Co Ltd 不純物拡散源
JPS62198119A (ja) * 1986-02-25 1987-09-01 Morita Mfg Co Ltd 硼素拡散方法並びにその装置

Also Published As

Publication number Publication date
JPH01169924A (ja) 1989-07-05
US4857480A (en) 1989-08-15
JPH0324055B2 (OSRAM) 1991-04-02
GB2197125B (en) 1990-01-10
GB2197125A (en) 1988-05-11
GB8723730D0 (en) 1987-11-11

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Legal Events

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