CA1235824A - Circuits mosfet vlsi utilisant un metal refraction et/ou un siliciure de metal refractaire - Google Patents

Circuits mosfet vlsi utilisant un metal refraction et/ou un siliciure de metal refractaire

Info

Publication number
CA1235824A
CA1235824A CA000486052A CA486052A CA1235824A CA 1235824 A CA1235824 A CA 1235824A CA 000486052 A CA000486052 A CA 000486052A CA 486052 A CA486052 A CA 486052A CA 1235824 A CA1235824 A CA 1235824A
Authority
CA
Canada
Prior art keywords
layer
gate
refractory metal
silicide
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000486052A
Other languages
English (en)
Inventor
Vu Q. Ho
Hussein M. Naguib
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Priority to CA000486052A priority Critical patent/CA1235824A/fr
Priority to GB8606040A priority patent/GB2177255B/en
Priority to JP12139786A priority patent/JPS624371A/ja
Application granted granted Critical
Publication of CA1235824A publication Critical patent/CA1235824A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
CA000486052A 1985-06-28 1985-06-28 Circuits mosfet vlsi utilisant un metal refraction et/ou un siliciure de metal refractaire Expired CA1235824A (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CA000486052A CA1235824A (fr) 1985-06-28 1985-06-28 Circuits mosfet vlsi utilisant un metal refraction et/ou un siliciure de metal refractaire
GB8606040A GB2177255B (en) 1985-06-28 1986-03-12 Vlsi mosfet circuits using refractory metal and/or refractory metal silicide
JP12139786A JPS624371A (ja) 1985-06-28 1986-05-28 耐熱金属珪化物を用いてｖｌｓｉ回路を製造する方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA000486052A CA1235824A (fr) 1985-06-28 1985-06-28 Circuits mosfet vlsi utilisant un metal refraction et/ou un siliciure de metal refractaire

Publications (1)

Publication Number Publication Date
CA1235824A true CA1235824A (fr) 1988-04-26

Family

ID=4130897

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000486052A Expired CA1235824A (fr) 1985-06-28 1985-06-28 Circuits mosfet vlsi utilisant un metal refraction et/ou un siliciure de metal refractaire

Country Status (3)

Country Link
JP (1) JPS624371A (fr)
CA (1) CA1235824A (fr)
GB (1) GB2177255B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6266679A (ja) * 1985-09-19 1987-03-26 Fujitsu Ltd 半導体装置の製造方法
EP0295121A1 (fr) * 1987-06-11 1988-12-14 General Electric Company Méthode pour fabriquer un dispositif semi-conducteur auto-aligné comportant du siliciure et un drain faiblement dopé
US4844776A (en) * 1987-12-04 1989-07-04 American Telephone And Telegraph Company, At&T Bell Laboratories Method for making folded extended window field effect transistor
GB2253090A (en) * 1991-02-22 1992-08-26 Westinghouse Brake & Signal Electrical contacts for semiconductor devices
US6387803B2 (en) * 1997-01-29 2002-05-14 Ultratech Stepper, Inc. Method for forming a silicide region on a silicon body

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5780739A (en) * 1980-11-07 1982-05-20 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
JPH0237093B2 (ja) * 1981-01-26 1990-08-22 Tokyo Shibaura Electric Co Handotaisochinoseizohoho
JPS5799775A (en) * 1980-12-12 1982-06-21 Toshiba Corp Manufacture of semiconductor device
JPS5818965A (ja) * 1981-07-28 1983-02-03 Toshiba Corp 半導体装置の製造方法
US4378628A (en) * 1981-08-27 1983-04-05 Bell Telephone Laboratories, Incorporated Cobalt silicide metallization for semiconductor integrated circuits
DE3211761A1 (de) * 1982-03-30 1983-10-06 Siemens Ag Verfahren zum herstellen von integrierten mos-feldeffekttransistorschaltungen in siliziumgate-technologie mit silizid beschichteten diffusionsgebieten als niederohmige leiterbahnen
JPS58175846A (ja) * 1982-04-08 1983-10-15 Toshiba Corp 半導体装置の製造方法
GB2139420B (en) * 1983-05-05 1987-04-29 Standard Telephones Cables Ltd Semiconductor devices
JPS60134466A (ja) * 1983-12-23 1985-07-17 Hitachi Ltd 半導体装置およびその製造方法
EP0490877A3 (en) * 1985-01-22 1992-08-26 Fairchild Semiconductor Corporation Interconnection for an integrated circuit

Also Published As

Publication number Publication date
JPS624371A (ja) 1987-01-10
GB2177255A (en) 1987-01-14
GB8606040D0 (en) 1986-04-16
GB2177255B (en) 1989-04-26

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Legal Events

Date Code Title Description
MKEX Expiry