GB2177255B - Vlsi mosfet circuits using refractory metal and/or refractory metal silicide - Google Patents

Vlsi mosfet circuits using refractory metal and/or refractory metal silicide

Info

Publication number
GB2177255B
GB2177255B GB8606040A GB8606040A GB2177255B GB 2177255 B GB2177255 B GB 2177255B GB 8606040 A GB8606040 A GB 8606040A GB 8606040 A GB8606040 A GB 8606040A GB 2177255 B GB2177255 B GB 2177255B
Authority
GB
United Kingdom
Prior art keywords
refractory metal
vlsi
mosfet circuits
metal silicide
silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8606040A
Other versions
GB2177255A (en
GB8606040D0 (en
Inventor
Vu Quoc Ho
Hussein Mostafa Naguib
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Publication of GB8606040D0 publication Critical patent/GB8606040D0/en
Publication of GB2177255A publication Critical patent/GB2177255A/en
Application granted granted Critical
Publication of GB2177255B publication Critical patent/GB2177255B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
GB8606040A 1985-06-28 1986-03-12 Vlsi mosfet circuits using refractory metal and/or refractory metal silicide Expired GB2177255B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA000486052A CA1235824A (en) 1985-06-28 1985-06-28 Vlsi mosfet circuits using refractory metal and/or refractory metal silicide

Publications (3)

Publication Number Publication Date
GB8606040D0 GB8606040D0 (en) 1986-04-16
GB2177255A GB2177255A (en) 1987-01-14
GB2177255B true GB2177255B (en) 1989-04-26

Family

ID=4130897

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8606040A Expired GB2177255B (en) 1985-06-28 1986-03-12 Vlsi mosfet circuits using refractory metal and/or refractory metal silicide

Country Status (3)

Country Link
JP (1) JPS624371A (en)
CA (1) CA1235824A (en)
GB (1) GB2177255B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6266679A (en) * 1985-09-19 1987-03-26 Fujitsu Ltd Manufacture of semiconductor device
EP0295121A1 (en) * 1987-06-11 1988-12-14 General Electric Company Method for fabricating a self-aligned lightly doped drain semiconductor device with silicide
US4844776A (en) * 1987-12-04 1989-07-04 American Telephone And Telegraph Company, At&T Bell Laboratories Method for making folded extended window field effect transistor
GB2253090A (en) * 1991-02-22 1992-08-26 Westinghouse Brake & Signal Electrical contacts for semiconductor devices
US6387803B2 (en) * 1997-01-29 2002-05-14 Ultratech Stepper, Inc. Method for forming a silicide region on a silicon body

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2104728A (en) * 1981-08-27 1983-03-09 Western Electric Co Method of making cobalt disilicide electrode
EP0090318A2 (en) * 1982-03-30 1983-10-05 Siemens Aktiengesellschaft Process for manufacturing integrated circuits comprising MOS field-effect transistors using silicon gate technology having silicide layers on diffusion regions as low-ohmic conductors
EP0091775A2 (en) * 1982-04-08 1983-10-19 Kabushiki Kaisha Toshiba A method of manufacturing a semiconductor device comprising an interconnection layer
GB2134706A (en) * 1980-11-07 1984-08-15 Hitachi Ltd Composite conductor structure for semiconductor devices
GB2139420A (en) * 1983-05-05 1984-11-07 Standard Telephones Cables Ltd Semiconductor devices
GB2151847A (en) * 1983-12-23 1985-07-24 Hitachi Ltd Semiconductor device with metal silicide layer and fabrication process thereof.
EP0190070A2 (en) * 1985-01-22 1986-08-06 Fairchild Semiconductor Corporation Semiconductor structure

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0237093B2 (en) * 1981-01-26 1990-08-22 Tokyo Shibaura Electric Co HANDOTAISOCHINOSEIZOHOHO
JPS5799775A (en) * 1980-12-12 1982-06-21 Toshiba Corp Manufacture of semiconductor device
JPS5818965A (en) * 1981-07-28 1983-02-03 Toshiba Corp Manufacture of semiconductor device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2134706A (en) * 1980-11-07 1984-08-15 Hitachi Ltd Composite conductor structure for semiconductor devices
GB2104728A (en) * 1981-08-27 1983-03-09 Western Electric Co Method of making cobalt disilicide electrode
EP0090318A2 (en) * 1982-03-30 1983-10-05 Siemens Aktiengesellschaft Process for manufacturing integrated circuits comprising MOS field-effect transistors using silicon gate technology having silicide layers on diffusion regions as low-ohmic conductors
EP0091775A2 (en) * 1982-04-08 1983-10-19 Kabushiki Kaisha Toshiba A method of manufacturing a semiconductor device comprising an interconnection layer
GB2139420A (en) * 1983-05-05 1984-11-07 Standard Telephones Cables Ltd Semiconductor devices
GB2151847A (en) * 1983-12-23 1985-07-24 Hitachi Ltd Semiconductor device with metal silicide layer and fabrication process thereof.
EP0190070A2 (en) * 1985-01-22 1986-08-06 Fairchild Semiconductor Corporation Semiconductor structure

Also Published As

Publication number Publication date
JPS624371A (en) 1987-01-10
GB2177255A (en) 1987-01-14
GB8606040D0 (en) 1986-04-16
CA1235824A (en) 1988-04-26

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20020312