CA1223549A - Method and apparatus for reactive vapour deposition of compounds of metal and semi-conductors - Google Patents
Method and apparatus for reactive vapour deposition of compounds of metal and semi-conductorsInfo
- Publication number
- CA1223549A CA1223549A CA000462264A CA462264A CA1223549A CA 1223549 A CA1223549 A CA 1223549A CA 000462264 A CA000462264 A CA 000462264A CA 462264 A CA462264 A CA 462264A CA 1223549 A CA1223549 A CA 1223549A
- Authority
- CA
- Canada
- Prior art keywords
- target
- diaphragm
- substrate
- aperture
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims abstract description 23
- 150000001875 compounds Chemical class 0.000 title claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 11
- 239000002184 metal Substances 0.000 title claims abstract description 11
- 230000008021 deposition Effects 0.000 title claims abstract description 10
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000012495 reaction gas Substances 0.000 claims abstract description 22
- 239000011261 inert gas Substances 0.000 claims abstract description 9
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 5
- 150000002739 metals Chemical class 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 30
- 239000013077 target material Substances 0.000 abstract description 4
- 238000005137 deposition process Methods 0.000 abstract description 2
- 230000008016 vaporization Effects 0.000 description 18
- 238000009834 vaporization Methods 0.000 description 15
- 230000008569 process Effects 0.000 description 10
- 238000000151 deposition Methods 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000009833 condensation Methods 0.000 description 4
- 230000005494 condensation Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000036284 oxygen consumption Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0068—Reactive sputtering characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEP3331707.0 | 1983-09-02 | ||
| DE19833331707 DE3331707A1 (de) | 1983-09-02 | 1983-09-02 | Verfahren und vorrichtung zum reaktiven aufstaeuben von verbindungen von metallen und halbleitern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1223549A true CA1223549A (en) | 1987-06-30 |
Family
ID=6208092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000462264A Expired CA1223549A (en) | 1983-09-02 | 1984-08-31 | Method and apparatus for reactive vapour deposition of compounds of metal and semi-conductors |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4572842A (enrdf_load_stackoverflow) |
| JP (1) | JPS60155673A (enrdf_load_stackoverflow) |
| AU (1) | AU567578B2 (enrdf_load_stackoverflow) |
| CA (1) | CA1223549A (enrdf_load_stackoverflow) |
| DE (1) | DE3331707A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2551460B1 (enrdf_load_stackoverflow) |
| GB (1) | GB2145741B (enrdf_load_stackoverflow) |
Families Citing this family (65)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3521053A1 (de) * | 1985-06-12 | 1986-12-18 | Leybold-Heraeus GmbH, 5000 Köln | Vorrichtung zum aufbringen duenner schichten auf ein substrat |
| US4949671A (en) * | 1985-10-24 | 1990-08-21 | Texas Instruments Incorporated | Processing apparatus and method |
| JPH0763056B2 (ja) * | 1986-08-06 | 1995-07-05 | 三菱電機株式会社 | 薄膜形成装置 |
| US4728406A (en) * | 1986-08-18 | 1988-03-01 | Energy Conversion Devices, Inc. | Method for plasma - coating a semiconductor body |
| DE3634598C2 (de) * | 1986-10-10 | 1994-06-16 | Leybold Ag | Verfahren und Vorrichtung zum reaktiven Aufdampfen von Metallverbindungen |
| DE3634710A1 (de) * | 1986-10-11 | 1988-04-21 | Ver Glaswerke Gmbh | Vorrichtung zum vakuumbeschichten einer glasscheibe durch reaktive kathodenzerstaeubung |
| DE3709175A1 (de) * | 1987-03-20 | 1988-09-29 | Leybold Ag | Verfahren und vorrichtung zum aufstaeuben hochohmiger schichten durch katodenzerstaeubung |
| DE3852430T2 (de) * | 1987-06-16 | 1995-05-04 | Hitachi Ltd | Magnetron-Zerstäubungsgerät und Verfahren zur Anwendung desselben zur Schichtenherstellung. |
| DE3726731A1 (de) * | 1987-08-11 | 1989-02-23 | Hartec Ges Fuer Hartstoffe Und | Verfahren zum aufbringen von ueberzuegen auf gegenstaende mittels magnetfeldunterstuetzter kathodenzerstaeubung im vakuum |
| JPH0639690B2 (ja) * | 1987-09-16 | 1994-05-25 | 東京エレクトロン株式会社 | スパッタリング装置 |
| DE3800449A1 (de) * | 1988-01-09 | 1989-07-20 | Leybold Ag | Verfahren und einrichtung zur herstellung magnetooptischer, speicher- und loeschfaehiger datentraeger |
| DE3805010A1 (de) * | 1988-02-18 | 1989-08-24 | Kernforschungsanlage Juelich | Verfahren zur herstellung duenner schichten aus oxydischem hochtemperatur-supraleiter |
| US4931158A (en) * | 1988-03-22 | 1990-06-05 | The Regents Of The Univ. Of Calif. | Deposition of films onto large area substrates using modified reactive magnetron sputtering |
| DE3821207A1 (de) * | 1988-06-23 | 1989-12-28 | Leybold Ag | Anordnung zum beschichten eines substrats mit dielektrika |
| US5047385A (en) * | 1988-07-20 | 1991-09-10 | The Board Of Trustees Of The Leland Stanford Junior University | Method of forming superconducting YBa2 Cu3 O7-x thin films with controlled crystal orientation |
| DE3906453A1 (de) * | 1989-03-01 | 1990-09-06 | Leybold Ag | Verfahren zum beschichten von substraten aus durchscheinendem werkstoff, beispielsweise aus floatglas |
| US5192393A (en) * | 1989-05-24 | 1993-03-09 | Hitachi, Ltd. | Method for growing thin film by beam deposition and apparatus for practicing the same |
| DE3919145A1 (de) * | 1989-06-12 | 1990-12-13 | Leybold Ag | Verfahren und vorrichtung zum beschichten eines substrats mit elektrisch leitenden werkstoffen |
| DE3925536A1 (de) * | 1989-08-02 | 1991-02-07 | Leybold Ag | Anordnung zur dickenmessung von duennschichten |
| DE3929695C2 (de) * | 1989-09-07 | 1996-12-19 | Leybold Ag | Vorrichtung zum Beschichten eines Substrats |
| DE3934092A1 (de) * | 1989-10-12 | 1991-04-18 | Leybold Ag | Vorrichtung zum beschichten eines kunststoffsubstrats, vorzugsweise eines polymethylmethacrylat-substrats mit aluminium |
| DE4006411C2 (de) * | 1990-03-01 | 1997-05-28 | Leybold Ag | Vorrichtung zum Aufbringen dünner Schichten auf ein Substrat |
| JP3076367B2 (ja) * | 1990-11-29 | 2000-08-14 | キヤノン株式会社 | プラズマ処理装置 |
| US5656138A (en) * | 1991-06-18 | 1997-08-12 | The Optical Corporation Of America | Very high vacuum magnetron sputtering method and apparatus for precision optical coatings |
| US5196102A (en) * | 1991-08-08 | 1993-03-23 | Microelectronics And Computer Technology Corporation | Method and apparatus for applying a compound of a metal and a gas onto a surface |
| JPH0565642A (ja) * | 1991-09-10 | 1993-03-19 | Matsushita Electric Ind Co Ltd | 反応性スパツタリング装置 |
| US5525199A (en) * | 1991-11-13 | 1996-06-11 | Optical Corporation Of America | Low pressure reactive magnetron sputtering apparatus and method |
| JPH05148634A (ja) * | 1991-11-22 | 1993-06-15 | Nec Corp | スパツタリング装置 |
| DE4140862A1 (de) * | 1991-12-11 | 1993-06-17 | Leybold Ag | Kathodenzerstaeubungsanlage |
| DE4301189C2 (de) * | 1993-01-19 | 2000-12-14 | Leybold Ag | Vorrichtung zum Beschichten von Substraten |
| DE4301188C2 (de) * | 1993-01-19 | 2001-05-31 | Leybold Ag | Vorrichtung zum Beschichten oder Ätzen von Substraten |
| DE4311360C2 (de) * | 1993-04-06 | 2002-10-24 | Applied Films Gmbh & Co Kg | Anordnung zum reaktiven Abscheiden von Werkstoffen als Dünnfilm durch Mittelfrequenz-Kathodenzerstäubung |
| DE4312014A1 (de) * | 1993-04-13 | 1994-10-20 | Leybold Ag | Vorrichtung zum Beschichten und/oder Ätzen von Substraten in einer Vakuumkammer |
| CH687258A5 (de) * | 1993-04-22 | 1996-10-31 | Balzers Hochvakuum | Gaseinlassanordnung. |
| US5346601A (en) * | 1993-05-11 | 1994-09-13 | Andrew Barada | Sputter coating collimator with integral reactive gas distribution |
| US6605198B1 (en) * | 1993-07-22 | 2003-08-12 | Sputtered Films, Inc. | Apparatus for, and method of, depositing a film on a substrate |
| DE4414083C2 (de) * | 1994-04-22 | 2000-01-20 | Leybold Ag | Vorrichtung zum Herstellen dünner Schichten auf Kunststoff-Substraten und zum Ätzen solcher Substrate |
| JPH09505356A (ja) * | 1994-09-03 | 1997-05-27 | バリアン・アソシエイツ・インコーポレイテッド | 薄膜形成装置 |
| ES2279517T3 (es) * | 1995-10-27 | 2007-08-16 | APPLIED MATERIALS GMBH & CO. KG | Dispositivo para recubrir un sustrato. |
| DE19540543A1 (de) * | 1995-10-31 | 1997-05-07 | Leybold Ag | Vorrichtung zum Beschichten eines Substrats mit Hilfe des Chemical-Vapor-Deposition-Verfahrens |
| CA2254354A1 (en) * | 1996-06-10 | 1997-12-18 | Corning Oca Corporation | Reactive magnetron sputtering apparatus and method |
| JPH10219430A (ja) * | 1997-02-05 | 1998-08-18 | Minolta Co Ltd | マグネトロンスパッタ法により得られる化合物薄膜ならびにそれを製造するための方法および装置 |
| JP4562818B2 (ja) | 1997-02-14 | 2010-10-13 | パナソニック株式会社 | 人工格子多層膜の着膜装置 |
| EP0860513A3 (en) * | 1997-02-19 | 2000-01-12 | Canon Kabushiki Kaisha | Thin film forming apparatus and process for forming thin film using same |
| US6200431B1 (en) * | 1997-02-19 | 2001-03-13 | Canon Kabushiki Kaisha | Reactive sputtering apparatus and process for forming thin film using same |
| DE19741708A1 (de) * | 1997-09-22 | 1999-04-01 | Leybold Systems Gmbh | Vorrichtung zum Aufbringen dünner Schichten auf ein Substrat |
| DE29717418U1 (de) * | 1997-09-26 | 1998-01-22 | Leybold Systems GmbH, 63450 Hanau | Vorrichtung zum Aufbringen dünner Schichten auf ein Substrat |
| US6413645B1 (en) | 2000-04-20 | 2002-07-02 | Battelle Memorial Institute | Ultrabarrier substrates |
| DE10216671A1 (de) * | 2002-04-15 | 2003-12-18 | Applied Films Gmbh & Co Kg | Beschichtungsanlage |
| US7648925B2 (en) | 2003-04-11 | 2010-01-19 | Vitex Systems, Inc. | Multilayer barrier stacks and methods of making multilayer barrier stacks |
| US7510913B2 (en) | 2003-04-11 | 2009-03-31 | Vitex Systems, Inc. | Method of making an encapsulated plasma sensitive device |
| JP2007527950A (ja) * | 2003-07-03 | 2007-10-04 | アイファイアー・テクノロジー・コープ | 発光体堆積のための硫化水素注入方法 |
| WO2007053586A2 (en) * | 2005-11-01 | 2007-05-10 | Cardinal Cg Company | Reactive sputter deposition processes and equipment |
| US20070261951A1 (en) * | 2006-04-06 | 2007-11-15 | Yan Ye | Reactive sputtering zinc oxide transparent conductive oxides onto large area substrates |
| JP4785683B2 (ja) * | 2006-09-11 | 2011-10-05 | キヤノン株式会社 | 成膜装置 |
| US7850828B2 (en) * | 2006-09-15 | 2010-12-14 | Cardinal Cg Company | Enhanced virtual anode |
| US9337446B2 (en) | 2008-12-22 | 2016-05-10 | Samsung Display Co., Ltd. | Encapsulated RGB OLEDs having enhanced optical output |
| US9184410B2 (en) | 2008-12-22 | 2015-11-10 | Samsung Display Co., Ltd. | Encapsulated white OLEDs having enhanced optical output |
| JP5226809B2 (ja) * | 2008-12-26 | 2013-07-03 | キヤノンアネルバ株式会社 | 成膜装置およびそれを用いた基板の製造方法 |
| US20100200395A1 (en) | 2009-02-06 | 2010-08-12 | Anton Dietrich | Techniques for depositing transparent conductive oxide coatings using dual C-MAG sputter apparatuses |
| US8590338B2 (en) | 2009-12-31 | 2013-11-26 | Samsung Mobile Display Co., Ltd. | Evaporator with internal restriction |
| EP2549521A1 (de) * | 2011-07-21 | 2013-01-23 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zur Herstellung partikelarmer Schichten auf Substraten |
| US9640359B2 (en) * | 2012-08-09 | 2017-05-02 | Vactronix Scientific, Inc. | Inverted cylindrical magnetron (ICM) system and methods of use |
| EP3254296B1 (en) | 2015-02-03 | 2021-04-14 | Cardinal CG Company | Sputtering apparatus including gas distribution system |
| DE102021105388A1 (de) | 2021-03-05 | 2022-09-08 | VON ARDENNE Asset GmbH & Co. KG | Sputtervorrichtung und Beschichtungsanordnung |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US392931A (en) * | 1888-11-13 | Metallic wire packing | ||
| AT258664B (de) * | 1964-08-25 | 1967-12-11 | Fritz Dr Grasenick | Vorrichtung zur Herstellung und bzw. oder zum Abbau von Schichten mittels elektrischer Gasentladungen |
| FR2245779B1 (enrdf_load_stackoverflow) * | 1973-09-28 | 1978-02-10 | Cit Alcatel | |
| US4019902A (en) * | 1974-06-10 | 1977-04-26 | Xerox Corporation | Photoreceptor fabrication |
| FR2376904A1 (fr) * | 1977-01-11 | 1978-08-04 | Alsthom Atlantique | Procede d'attaque d'une couche mince par decomposition d'un gaz dans un plasma |
| JPS5421974A (en) * | 1977-07-19 | 1979-02-19 | Fujitsu Ltd | Spattering device |
| JPS6015700B2 (ja) * | 1977-07-19 | 1985-04-20 | 富士通株式会社 | スパツタ装置 |
| JPS5435178A (en) * | 1977-08-23 | 1979-03-15 | Matsushita Electric Ind Co Ltd | Ultrafine particle depositing apparatus |
| JPS54110988A (en) * | 1978-01-31 | 1979-08-30 | Nii Chiefunorogii Afutomobirin | Coating vacuum evaporation apparatus |
| CH636647A5 (de) * | 1979-02-01 | 1983-06-15 | Balzers Hochvakuum | Vakuumbedampfungsanlage. |
| DD142568A1 (de) * | 1979-03-22 | 1980-07-02 | Harald Bilz | EINRICHTUNG ZUM REAKTIVEN BESCHICHTEN MIT DEM PLASM&TRON |
| WO1982000542A1 (en) * | 1980-08-04 | 1982-02-18 | Behn R | Device for making superposed metal layers and micaceous polymer layers,laterally off set relative to one another |
| US4336277A (en) * | 1980-09-29 | 1982-06-22 | The Regents Of The University Of California | Transparent electrical conducting films by activated reactive evaporation |
| DE3112104A1 (de) * | 1981-03-27 | 1982-10-07 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren und vorrichtung zum herstellen von elektrisch leitfaehigen transparenten oxidschichten |
| DE3129327C2 (de) * | 1981-07-24 | 1985-09-12 | Flachglas AG, 8510 Fürth | Vorrichtung zum Aufbringen dünner Schichten durch Kathodenzerstäubung |
| JPS58110673A (ja) * | 1981-12-23 | 1983-07-01 | Hitachi Ltd | 反応性スパツタリング装置 |
-
1983
- 1983-09-02 DE DE19833331707 patent/DE3331707A1/de active Granted
-
1984
- 1984-08-16 GB GB08420797A patent/GB2145741B/en not_active Expired
- 1984-08-24 US US06/644,314 patent/US4572842A/en not_active Expired - Fee Related
- 1984-08-29 AU AU32497/84A patent/AU567578B2/en not_active Ceased
- 1984-08-30 FR FR8413449A patent/FR2551460B1/fr not_active Expired
- 1984-08-31 CA CA000462264A patent/CA1223549A/en not_active Expired
- 1984-09-03 JP JP59182904A patent/JPS60155673A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US4572842A (en) | 1986-02-25 |
| GB2145741B (en) | 1986-07-16 |
| DE3331707C2 (enrdf_load_stackoverflow) | 1988-12-22 |
| DE3331707A1 (de) | 1985-03-21 |
| FR2551460A1 (fr) | 1985-03-08 |
| AU3249784A (en) | 1985-03-07 |
| GB2145741A (en) | 1985-04-03 |
| FR2551460B1 (fr) | 1987-11-27 |
| AU567578B2 (en) | 1987-11-26 |
| JPS60155673A (ja) | 1985-08-15 |
| GB8420797D0 (en) | 1984-09-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |