CA1215480A - Method of manufacturing a high-voltage bipolar transistor - Google Patents

Method of manufacturing a high-voltage bipolar transistor

Info

Publication number
CA1215480A
CA1215480A CA000450844A CA450844A CA1215480A CA 1215480 A CA1215480 A CA 1215480A CA 000450844 A CA000450844 A CA 000450844A CA 450844 A CA450844 A CA 450844A CA 1215480 A CA1215480 A CA 1215480A
Authority
CA
Canada
Prior art keywords
epitaxial layer
layer
separation walls
isolating
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000450844A
Other languages
English (en)
French (fr)
Inventor
Bernard Vertongen
Jean L. Vite
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA1215480A publication Critical patent/CA1215480A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions

Landscapes

  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
CA000450844A 1983-03-30 1984-03-29 Method of manufacturing a high-voltage bipolar transistor Expired CA1215480A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8305246 1983-03-30
FR8305246A FR2543739B1 (fr) 1983-03-30 1983-03-30 Procede de realisation d'un transistor bipolaire haute tension

Publications (1)

Publication Number Publication Date
CA1215480A true CA1215480A (en) 1986-12-16

Family

ID=9287390

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000450844A Expired CA1215480A (en) 1983-03-30 1984-03-29 Method of manufacturing a high-voltage bipolar transistor

Country Status (5)

Country Link
EP (1) EP0126499B1 (https=)
JP (1) JPS59182565A (https=)
CA (1) CA1215480A (https=)
DE (1) DE3468781D1 (https=)
FR (1) FR2543739B1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8500218A (nl) * 1985-01-28 1986-08-18 Philips Nv Halfgeleiderinrichting met tweedimensionaal ladingsdragergas.
US5023194A (en) * 1988-02-11 1991-06-11 Exar Corporation Method of making a multicollector vertical pnp transistor
DE69331052T2 (de) * 1993-07-01 2002-06-06 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Integrierte Randstruktur für Hochspannung-Halbleiteranordnungen und dazugehöriger Herstellungsprozess
GB0119215D0 (en) 2001-08-07 2001-09-26 Koninkl Philips Electronics Nv Trench bipolar transistor
JP2003078032A (ja) * 2001-09-05 2003-03-14 Mitsubishi Electric Corp 半導体装置およびその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50278B1 (https=) * 1970-07-16 1975-01-07
JPS5724659B2 (https=) * 1974-10-31 1982-05-25
JPS5247319A (en) * 1975-10-13 1977-04-15 Victor Co Of Japan Ltd Recording/reproducing system of color video signal
JPS59978B2 (ja) * 1976-04-22 1984-01-10 ソニー株式会社 半導体集積回路の製造方法
CA1131801A (en) * 1978-01-18 1982-09-14 Johannes A. Appels Semiconductor device
JPS55132068A (en) * 1979-03-30 1980-10-14 Ibm Pnp bipolar transistor
DE3215652A1 (de) * 1982-04-27 1983-10-27 Siemens AG, 1000 Berlin und 8000 München Integrierbarer bipolarer transistor

Also Published As

Publication number Publication date
EP0126499B1 (fr) 1988-01-13
JPS59182565A (ja) 1984-10-17
FR2543739B1 (fr) 1986-04-18
EP0126499A1 (fr) 1984-11-28
DE3468781D1 (en) 1988-02-18
JPH0523054B2 (https=) 1993-03-31
FR2543739A1 (fr) 1984-10-05

Similar Documents

Publication Publication Date Title
US4860081A (en) Semiconductor integrated circuit structure with insulative partitions
US3961999A (en) Method for forming recessed dielectric isolation with a minimized "bird's beak" problem
US3962717A (en) Oxide isolated integrated injection logic with selective guard ring
US4546536A (en) Fabrication methods for high performance lateral bipolar transistors
US5004705A (en) Inverted epitaxial process
KR100200059B1 (ko) 쇼트키 장벽 다이오드 및 쇼트키 장벽 다이오드 클램프형 트랜지스터와 이들을 제조하는 방법
US4583106A (en) Fabrication methods for high performance lateral bipolar transistors
CA1203643A (en) Semiconductor device interconnection pattern with rim
JPH0222869A (ja) 対称阻止高降伏電圧半導体デバイスとその製造方法
US5436171A (en) Photodiode array device and method for producing same
JPH07312372A (ja) 高電圧半導体装置のための集積エッジ構造及びその製造方法
US4002511A (en) Method for forming masks comprising silicon nitride and novel mask structures produced thereby
US3993513A (en) Combined method for fabricating oxide-isolated vertical bipolar transistors and complementary oxide-isolated lateral bipolar transistors and the resulting structures
CA1205574A (en) Ion implanted memory cells for high density ram
US4505026A (en) CMOS Process for fabricating integrated circuits, particularly dynamic memory cells
US4570330A (en) Method of producing isolated regions for an integrated circuit substrate
US4988639A (en) Method of manufacturing semiconductor devices using trench isolation method that forms highly flat buried insulation film
US4472873A (en) Method for forming submicron bipolar transistors without epitaxial growth and the resulting structure
US4450021A (en) Mask diffusion process for forming Zener diode or complementary field effect transistors
CA1048658A (en) Method for forming dielectric isolation in integrated circuits and structure produced thereby
CA1215480A (en) Method of manufacturing a high-voltage bipolar transistor
US3738877A (en) Semiconductor devices
EP0029552A2 (en) Method for producing a semiconductor device
US4546539A (en) I2 L Structure and fabrication process compatible with high voltage bipolar transistors
US6403447B1 (en) Reduced substrate capacitance high performance SOI process

Legal Events

Date Code Title Description
MKEX Expiry