JPS5724659B2 - - Google Patents
Info
- Publication number
- JPS5724659B2 JPS5724659B2 JP12586874A JP12586874A JPS5724659B2 JP S5724659 B2 JPS5724659 B2 JP S5724659B2 JP 12586874 A JP12586874 A JP 12586874A JP 12586874 A JP12586874 A JP 12586874A JP S5724659 B2 JPS5724659 B2 JP S5724659B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/148—Cathode regions of thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/67—Complementary BJTs
- H10D84/673—Vertical complementary BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/30—Isolation regions comprising PN junctions
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12586874A JPS5724659B2 (https=) | 1974-10-31 | 1974-10-31 | |
| US05/620,293 US4032957A (en) | 1972-12-29 | 1975-10-07 | Semiconductor device |
| GB42496/75A GB1514578A (en) | 1974-10-31 | 1975-10-16 | Semiconductor devices |
| CA237,952A CA1056068A (en) | 1974-10-31 | 1975-10-20 | Semiconductor device |
| DE19752547303 DE2547303A1 (de) | 1974-10-31 | 1975-10-22 | Halbleiterbauelement |
| NL7512681A NL7512681A (nl) | 1974-10-31 | 1975-10-29 | Halfgeleiderinrichting. |
| FR7533224A FR2290039A1 (fr) | 1974-10-31 | 1975-10-30 | Composant semi-conducteur |
| IT28898/75A IT1044307B (it) | 1974-10-31 | 1975-10-31 | Dispositivo semiconduttore |
| US05/654,758 US4038680A (en) | 1972-12-29 | 1976-02-03 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12586874A JPS5724659B2 (https=) | 1974-10-31 | 1974-10-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5151286A JPS5151286A (https=) | 1976-05-06 |
| JPS5724659B2 true JPS5724659B2 (https=) | 1982-05-25 |
Family
ID=14920910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12586874A Expired JPS5724659B2 (https=) | 1972-12-29 | 1974-10-31 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5724659B2 (https=) |
| CA (1) | CA1056068A (https=) |
| DE (1) | DE2547303A1 (https=) |
| FR (1) | FR2290039A1 (https=) |
| GB (1) | GB1514578A (https=) |
| IT (1) | IT1044307B (https=) |
| NL (1) | NL7512681A (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5754969B2 (https=) * | 1974-04-04 | 1982-11-20 | ||
| JPS5753672B2 (https=) * | 1974-04-10 | 1982-11-13 | ||
| FR2413785A1 (fr) * | 1977-12-30 | 1979-07-27 | Radiotechnique Compelec | Dispositif semi-conducteur monolithique a structure plane multicouche, de type mesa, comprenant au moins un transistor associe a une diode schottky |
| FR2462028A1 (fr) * | 1979-07-17 | 1981-02-06 | Thomson Csf | Structure de thyristor pour circuit integre et son procede de fabrication |
| FR2543739B1 (fr) * | 1983-03-30 | 1986-04-18 | Radiotechnique Compelec | Procede de realisation d'un transistor bipolaire haute tension |
| CN116047256B (zh) * | 2023-03-24 | 2023-08-29 | 长鑫存储技术有限公司 | 测试方法、测试装置及电子设备 |
-
1974
- 1974-10-31 JP JP12586874A patent/JPS5724659B2/ja not_active Expired
-
1975
- 1975-10-16 GB GB42496/75A patent/GB1514578A/en not_active Expired
- 1975-10-20 CA CA237,952A patent/CA1056068A/en not_active Expired
- 1975-10-22 DE DE19752547303 patent/DE2547303A1/de not_active Withdrawn
- 1975-10-29 NL NL7512681A patent/NL7512681A/xx not_active Application Discontinuation
- 1975-10-30 FR FR7533224A patent/FR2290039A1/fr active Granted
- 1975-10-31 IT IT28898/75A patent/IT1044307B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| GB1514578A (en) | 1978-06-14 |
| FR2290039B3 (https=) | 1979-09-14 |
| CA1056068A (en) | 1979-06-05 |
| IT1044307B (it) | 1980-03-20 |
| DE2547303A1 (de) | 1976-05-06 |
| JPS5151286A (https=) | 1976-05-06 |
| NL7512681A (nl) | 1976-05-04 |
| FR2290039A1 (fr) | 1976-05-28 |