FR2543739B1 - Procede de realisation d'un transistor bipolaire haute tension - Google Patents

Procede de realisation d'un transistor bipolaire haute tension

Info

Publication number
FR2543739B1
FR2543739B1 FR8305246A FR8305246A FR2543739B1 FR 2543739 B1 FR2543739 B1 FR 2543739B1 FR 8305246 A FR8305246 A FR 8305246A FR 8305246 A FR8305246 A FR 8305246A FR 2543739 B1 FR2543739 B1 FR 2543739B1
Authority
FR
France
Prior art keywords
producing
high voltage
bipolar transistor
voltage bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8305246A
Other languages
English (en)
French (fr)
Other versions
FR2543739A1 (fr
Inventor
Bernard Vertongen
Jean-Louis Vite
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR8305246A priority Critical patent/FR2543739B1/fr
Priority to EP84200427A priority patent/EP0126499B1/fr
Priority to DE8484200427T priority patent/DE3468781D1/de
Priority to JP59057483A priority patent/JPS59182565A/ja
Priority to CA000450844A priority patent/CA1215480A/en
Publication of FR2543739A1 publication Critical patent/FR2543739A1/fr
Application granted granted Critical
Publication of FR2543739B1 publication Critical patent/FR2543739B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
FR8305246A 1983-03-30 1983-03-30 Procede de realisation d'un transistor bipolaire haute tension Expired FR2543739B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR8305246A FR2543739B1 (fr) 1983-03-30 1983-03-30 Procede de realisation d'un transistor bipolaire haute tension
EP84200427A EP0126499B1 (fr) 1983-03-30 1984-03-26 Procédé de réalisation d'un transistor bipolaire haute tension
DE8484200427T DE3468781D1 (en) 1983-03-30 1984-03-26 Process for making a high-voltage bipolar transistor
JP59057483A JPS59182565A (ja) 1983-03-30 1984-03-27 半導体装置の製造方法および半導体装置
CA000450844A CA1215480A (en) 1983-03-30 1984-03-29 Method of manufacturing a high-voltage bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8305246A FR2543739B1 (fr) 1983-03-30 1983-03-30 Procede de realisation d'un transistor bipolaire haute tension

Publications (2)

Publication Number Publication Date
FR2543739A1 FR2543739A1 (fr) 1984-10-05
FR2543739B1 true FR2543739B1 (fr) 1986-04-18

Family

ID=9287390

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8305246A Expired FR2543739B1 (fr) 1983-03-30 1983-03-30 Procede de realisation d'un transistor bipolaire haute tension

Country Status (5)

Country Link
EP (1) EP0126499B1 (https=)
JP (1) JPS59182565A (https=)
CA (1) CA1215480A (https=)
DE (1) DE3468781D1 (https=)
FR (1) FR2543739B1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8500218A (nl) * 1985-01-28 1986-08-18 Philips Nv Halfgeleiderinrichting met tweedimensionaal ladingsdragergas.
US5023194A (en) * 1988-02-11 1991-06-11 Exar Corporation Method of making a multicollector vertical pnp transistor
DE69331052T2 (de) * 1993-07-01 2002-06-06 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Integrierte Randstruktur für Hochspannung-Halbleiteranordnungen und dazugehöriger Herstellungsprozess
GB0119215D0 (en) 2001-08-07 2001-09-26 Koninkl Philips Electronics Nv Trench bipolar transistor
JP2003078032A (ja) * 2001-09-05 2003-03-14 Mitsubishi Electric Corp 半導体装置およびその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50278B1 (https=) * 1970-07-16 1975-01-07
JPS5724659B2 (https=) * 1974-10-31 1982-05-25
JPS5247319A (en) * 1975-10-13 1977-04-15 Victor Co Of Japan Ltd Recording/reproducing system of color video signal
JPS59978B2 (ja) * 1976-04-22 1984-01-10 ソニー株式会社 半導体集積回路の製造方法
CA1131801A (en) * 1978-01-18 1982-09-14 Johannes A. Appels Semiconductor device
JPS55132068A (en) * 1979-03-30 1980-10-14 Ibm Pnp bipolar transistor
DE3215652A1 (de) * 1982-04-27 1983-10-27 Siemens AG, 1000 Berlin und 8000 München Integrierbarer bipolarer transistor

Also Published As

Publication number Publication date
EP0126499B1 (fr) 1988-01-13
JPS59182565A (ja) 1984-10-17
CA1215480A (en) 1986-12-16
EP0126499A1 (fr) 1984-11-28
DE3468781D1 (en) 1988-02-18
JPH0523054B2 (https=) 1993-03-31
FR2543739A1 (fr) 1984-10-05

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Legal Events

Date Code Title Description
ST Notification of lapse