CA1201538A - Method of manufacturing field effect transistors - Google Patents

Method of manufacturing field effect transistors

Info

Publication number
CA1201538A
CA1201538A CA000457573A CA457573A CA1201538A CA 1201538 A CA1201538 A CA 1201538A CA 000457573 A CA000457573 A CA 000457573A CA 457573 A CA457573 A CA 457573A CA 1201538 A CA1201538 A CA 1201538A
Authority
CA
Canada
Prior art keywords
gate
substrate
recesses
main surface
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000457573A
Other languages
English (en)
French (fr)
Inventor
Ajit G. Rode
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tektronix Inc
Original Assignee
Tektronix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tektronix Inc filed Critical Tektronix Inc
Application granted granted Critical
Publication of CA1201538A publication Critical patent/CA1201538A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H10D30/0614—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs using processes wherein the final gate is made after the completion of the source and drain regions, e.g. gate-last processes using dummy gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • H10P50/648—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/86—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of Schottky-barrier gate FETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
CA000457573A 1983-07-25 1984-06-27 Method of manufacturing field effect transistors Expired CA1201538A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US51716283A 1983-07-25 1983-07-25
US517,162 1983-07-25

Publications (1)

Publication Number Publication Date
CA1201538A true CA1201538A (en) 1986-03-04

Family

ID=24058627

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000457573A Expired CA1201538A (en) 1983-07-25 1984-06-27 Method of manufacturing field effect transistors

Country Status (3)

Country Link
EP (1) EP0135307A3 (cg-RX-API-DMAC10.html)
JP (1) JPS6043866A (cg-RX-API-DMAC10.html)
CA (1) CA1201538A (cg-RX-API-DMAC10.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0793410B2 (ja) * 1987-12-28 1995-10-09 三菱電機株式会社 半導体装置
US5192701A (en) * 1988-03-17 1993-03-09 Kabushiki Kaisha Toshiba Method of manufacturing field effect transistors having different threshold voltages
JPH01236657A (ja) * 1988-03-17 1989-09-21 Toshiba Corp 半導体装置の製造方法
KR100436291B1 (ko) * 1999-11-09 2004-06-16 주식회사 하이닉스반도체 반도체 소자의 트랜지스터 제조방법
JP4825232B2 (ja) * 2008-03-21 2011-11-30 中外炉工業株式会社 バーナ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54144181A (en) * 1978-04-28 1979-11-10 Nec Corp Integrated inverter circuit

Also Published As

Publication number Publication date
EP0135307A3 (en) 1986-12-30
JPH0224024B2 (cg-RX-API-DMAC10.html) 1990-05-28
JPS6043866A (ja) 1985-03-08
EP0135307A2 (en) 1985-03-27

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