CA1189768A - Method of laser annealing of subsurface ion implanted regions - Google Patents

Method of laser annealing of subsurface ion implanted regions

Info

Publication number
CA1189768A
CA1189768A CA000404043A CA404043A CA1189768A CA 1189768 A CA1189768 A CA 1189768A CA 000404043 A CA000404043 A CA 000404043A CA 404043 A CA404043 A CA 404043A CA 1189768 A CA1189768 A CA 1189768A
Authority
CA
Canada
Prior art keywords
annealing
laser
region
implanted
buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000404043A
Other languages
English (en)
French (fr)
Inventor
Howard H. Hansen
Jerome B. Lasky
Ronald R. Silverman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA1189768A publication Critical patent/CA1189768A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/092—Laser beam processing-diodes or transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/093—Laser beam treatment in general

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Lasers (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
CA000404043A 1981-07-08 1982-05-28 Method of laser annealing of subsurface ion implanted regions Expired CA1189768A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US281,267 1981-07-08
US06/281,267 US4379727A (en) 1981-07-08 1981-07-08 Method of laser annealing of subsurface ion implanted regions

Publications (1)

Publication Number Publication Date
CA1189768A true CA1189768A (en) 1985-07-02

Family

ID=23076599

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000404043A Expired CA1189768A (en) 1981-07-08 1982-05-28 Method of laser annealing of subsurface ion implanted regions

Country Status (5)

Country Link
US (1) US4379727A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0069327B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5810822A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1189768A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3277264D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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JPS5823479A (ja) * 1981-08-05 1983-02-12 Fujitsu Ltd 半導体装置の製造方法
JPS5856409A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 半導体装置の製造方法
US4698486A (en) * 1984-02-28 1987-10-06 Tamarack Scientific Co., Inc. Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
US4571348A (en) * 1984-08-08 1986-02-18 General Motors Corporation Reducing hydrogen content of vacuum deposited films
US4621411A (en) * 1984-09-28 1986-11-11 Texas Instruments Incorporated Laser-enhanced drive in of source and drain diffusions
US4666557A (en) * 1984-12-10 1987-05-19 Ncr Corporation Method for forming channel stops in vertical semiconductor surfaces
US5578520A (en) 1991-05-28 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US5766344A (en) * 1991-09-21 1998-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
JPH06124913A (ja) * 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
JP3211394B2 (ja) * 1992-08-13 2001-09-25 ソニー株式会社 半導体装置の製造方法
JPH06232069A (ja) * 1993-02-04 1994-08-19 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
GB9406900D0 (en) * 1994-04-07 1994-06-01 Philips Electronics Uk Ltd Manufacture of electronic devices comprising thin -film transistors
DE19511251A1 (de) * 1995-03-27 1996-10-02 Siemens Ag Bipolarer Siliziumtransistor
CN1110068C (zh) * 1997-11-28 2003-05-28 松下电器产业株式会社 半导体杂质的激活方法以及激活装置
US6417515B1 (en) 2000-03-17 2002-07-09 International Business Machines Corporation In-situ ion implant activation and measurement apparatus
US6594446B2 (en) 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
KR101067901B1 (ko) * 2001-12-26 2011-09-28 맷슨 테크날러지 캐나다 인코퍼레이티드 온도 측정 및 열처리 방법과 시스템
WO2004057650A1 (en) 2002-12-20 2004-07-08 Mattson Technology Canada, Inc. Methods and systems for supporting a workpiece and for heat-treating the workpiece
WO2005059991A1 (en) * 2003-12-19 2005-06-30 Mattson Technology Canada Inc. Apparatuses and methods for suppressing thermally induced motion of a workpiece
TWI237857B (en) * 2004-10-21 2005-08-11 Nanya Technology Corp Method of fabricating MOS transistor by millisecond anneal
US7989888B2 (en) * 2006-08-31 2011-08-02 Infineon Technologies Autria AG Semiconductor device with a field stop zone and process of producing the same
JP5967859B2 (ja) * 2006-11-15 2016-08-10 マトソン テクノロジー、インコーポレイテッド 熱処理中の被加工物を支持するシステムおよび方法
FR2921752B1 (fr) * 2007-10-01 2009-11-13 Aplinov Procede de chauffage d'une plaque par un flux lumineux.
WO2009137940A1 (en) 2008-05-16 2009-11-19 Mattson Technology Canada, Inc. Workpiece breakage prevention method and apparatus
FR2938116B1 (fr) * 2008-11-04 2011-03-11 Aplinov Procede et dispositif de chauffage d'une couche d'une plaque par amorcage et flux lumineux.
DE112011100451T5 (de) * 2010-02-04 2013-04-04 Fuji Electric Co., Ltd Verfahren zur Herstellung einer Halbleitervorrichtung und Vorrichtung zur Herstellung einer Halbleitervorrichtung

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4151008A (en) * 1974-11-15 1979-04-24 Spire Corporation Method involving pulsed light processing of semiconductor devices
US4111720A (en) * 1977-03-31 1978-09-05 International Business Machines Corporation Method for forming a non-epitaxial bipolar integrated circuit
US4230505A (en) * 1979-10-09 1980-10-28 Rca Corporation Method of making an impatt diode utilizing a combination of epitaxial deposition, ion implantation and substrate removal
US4269631A (en) * 1980-01-14 1981-05-26 International Business Machines Corporation Selective epitaxy method using laser annealing for making filamentary transistors
US4318752A (en) * 1980-05-16 1982-03-09 Bell Telephone Laboratories, Incorporated Heterojunction semiconductor laser fabrication utilizing laser radiation

Also Published As

Publication number Publication date
EP0069327A3 (en) 1984-09-12
US4379727A (en) 1983-04-12
JPS6244849B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1987-09-22
EP0069327B1 (en) 1987-09-09
DE3277264D1 (en) 1987-10-15
JPS5810822A (ja) 1983-01-21
EP0069327A2 (en) 1983-01-12

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