CA1168743A - Heterojunction phototransistor constructed in planar technology - Google Patents

Heterojunction phototransistor constructed in planar technology

Info

Publication number
CA1168743A
CA1168743A CA000389743A CA389743A CA1168743A CA 1168743 A CA1168743 A CA 1168743A CA 000389743 A CA000389743 A CA 000389743A CA 389743 A CA389743 A CA 389743A CA 1168743 A CA1168743 A CA 1168743A
Authority
CA
Canada
Prior art keywords
layer
substrate
region
phototransistor
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000389743A
Other languages
English (en)
French (fr)
Inventor
Pierre Poulain
Beaudoin De Cremoux
Pierre Hirtz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of CA1168743A publication Critical patent/CA1168743A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H10F30/245—Bipolar phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes

Landscapes

  • Light Receiving Elements (AREA)
CA000389743A 1980-11-12 1981-11-09 Heterojunction phototransistor constructed in planar technology Expired CA1168743A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8024036 1980-11-12
FR8024036A FR2494044A1 (fr) 1980-11-12 1980-11-12 Phototransistor a heterojonction en technologie planar et procede de fabrication d'un tel phototransistor

Publications (1)

Publication Number Publication Date
CA1168743A true CA1168743A (en) 1984-06-05

Family

ID=9247885

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000389743A Expired CA1168743A (en) 1980-11-12 1981-11-09 Heterojunction phototransistor constructed in planar technology

Country Status (6)

Country Link
US (1) US4445130A (enExample)
EP (1) EP0052033B1 (enExample)
JP (1) JPS57111075A (enExample)
CA (1) CA1168743A (enExample)
DE (1) DE3160274D1 (enExample)
FR (1) FR2494044A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59108344A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像素子
CA1267468C (en) * 1983-11-21 1990-04-03 Optical device package
DE3436927A1 (de) * 1984-10-09 1986-04-10 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Bipolarer fototransistor
JPH0646655B2 (ja) * 1985-04-01 1994-06-15 キヤノン株式会社 固体撮像装置
US4672414A (en) * 1985-06-28 1987-06-09 Texas Instruments Incorporated Planar heterojunction bipolar device and method
JPH0654957B2 (ja) * 1985-11-13 1994-07-20 キヤノン株式会社 光電変換装置
FR2724769B1 (fr) * 1994-09-16 1996-12-06 Thomson Csf Procede de realisation de diodes laser a emission surfacique
JP5400280B2 (ja) * 2007-06-07 2014-01-29 パナソニック株式会社 固体撮像装置
GB201703196D0 (en) * 2017-02-28 2017-04-12 Univ Of Sussex X-ray and gammay-ray photodiode

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3609460A (en) * 1968-06-28 1971-09-28 Rca Corp Power transistor having ballasted emitter fingers interdigitated with base fingers
JPS4996687A (enExample) * 1973-01-16 1974-09-12
US3993963A (en) * 1974-06-20 1976-11-23 Bell Telephone Laboratories, Incorporated Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same
JPS5235999B2 (enExample) * 1974-08-26 1977-09-12
SU650131A1 (ru) * 1976-05-03 1979-02-28 Предприятие П/Я А-1076 Бипол рный свч-транзистор
JPS5455189A (en) * 1977-10-11 1979-05-02 Nippon Telegr & Teleph Corp <Ntt> Photo transistor

Also Published As

Publication number Publication date
EP0052033A1 (fr) 1982-05-19
FR2494044B1 (enExample) 1984-01-13
FR2494044A1 (fr) 1982-05-14
EP0052033B1 (fr) 1983-05-11
JPS57111075A (en) 1982-07-10
JPH0468793B2 (enExample) 1992-11-04
US4445130A (en) 1984-04-24
DE3160274D1 (en) 1983-06-16

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Legal Events

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