CA1163020A - High voltage semiconductor device having improvements to the dv/dt capability and plasma spreading - Google Patents
High voltage semiconductor device having improvements to the dv/dt capability and plasma spreadingInfo
- Publication number
- CA1163020A CA1163020A CA000377573A CA377573A CA1163020A CA 1163020 A CA1163020 A CA 1163020A CA 000377573 A CA000377573 A CA 000377573A CA 377573 A CA377573 A CA 377573A CA 1163020 A CA1163020 A CA 1163020A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- cathode
- emitter
- high voltage
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 230000007480 spreading Effects 0.000 title abstract description 5
- 230000006872 improvement Effects 0.000 title description 4
- 238000001465 metallisation Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 14
- 230000000737 periodic effect Effects 0.000 claims description 5
- 230000005855 radiation Effects 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 abstract description 8
- 230000001052 transient effect Effects 0.000 description 18
- 238000000034 method Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 235000007253 Trigonella corniculata Nutrition 0.000 description 1
- 240000004336 Trigonella corniculata Species 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- QHGVXILFMXYDRS-UHFFFAOYSA-N pyraclofos Chemical compound C1=C(OP(=O)(OCC)SCCC)C=NN1C1=CC=C(Cl)C=C1 QHGVXILFMXYDRS-UHFFFAOYSA-N 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7408—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a capacitor or a resistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15274280A | 1980-05-23 | 1980-05-23 | |
| US152,742 | 1980-05-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1163020A true CA1163020A (en) | 1984-02-28 |
Family
ID=22544224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000377573A Expired CA1163020A (en) | 1980-05-23 | 1981-05-14 | High voltage semiconductor device having improvements to the dv/dt capability and plasma spreading |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5710972A (ja) |
| CA (1) | CA1163020A (ja) |
| CH (1) | CH656485A5 (ja) |
| DE (1) | DE3120254A1 (ja) |
| SE (1) | SE457837B (ja) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5810656B2 (ja) * | 1977-01-25 | 1983-02-26 | 矢崎総業株式会社 | 太陽熱利用冷暖房給湯装置 |
| JPS58134470A (ja) * | 1982-02-05 | 1983-08-10 | Meidensha Electric Mfg Co Ltd | 増幅ゲ−ト構造のゲ−トタ−ンオフサイリスタ |
| JPH0680821B2 (ja) * | 1989-05-01 | 1994-10-12 | 株式会社東芝 | 高感度トライアック |
| US5656966A (en) * | 1994-03-09 | 1997-08-12 | Cooper Industries, Inc. | Turbine engine ignition exciter circuit including low voltage lockout control |
| US5592118A (en) * | 1994-03-09 | 1997-01-07 | Cooper Industries, Inc. | Ignition exciter circuit with thyristors having high di/dt and high voltage blockage |
| US5970324A (en) * | 1994-03-09 | 1999-10-19 | Driscoll; John Cuervo | Methods of making dual gated power electronic switching devices |
| US5981982A (en) * | 1994-03-09 | 1999-11-09 | Driscoll; John Cuervo | Dual gated power electronic switching devices |
| US7355300B2 (en) | 2004-06-15 | 2008-04-08 | Woodward Governor Company | Solid state turbine engine ignition exciter having elevated temperature operational capability |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5917863B2 (ja) * | 1976-11-04 | 1984-04-24 | 三菱電機株式会社 | サイリスタ |
| JPS5942991B2 (ja) * | 1977-05-23 | 1984-10-18 | 株式会社日立製作所 | サイリスタ |
| DE2855265A1 (de) * | 1978-12-21 | 1980-07-10 | Bbc Brown Boveri & Cie | Thyristor |
-
1981
- 1981-05-14 CA CA000377573A patent/CA1163020A/en not_active Expired
- 1981-05-21 DE DE19813120254 patent/DE3120254A1/de active Granted
- 1981-05-21 SE SE8103222A patent/SE457837B/sv not_active IP Right Cessation
- 1981-05-22 CH CH337481A patent/CH656485A5/de not_active IP Right Cessation
- 1981-05-22 JP JP7680781A patent/JPS5710972A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CH656485A5 (de) | 1986-06-30 |
| SE8103222L (sv) | 1981-11-24 |
| DE3120254A1 (de) | 1982-05-27 |
| JPS5710972A (en) | 1982-01-20 |
| DE3120254C2 (ja) | 1993-09-23 |
| SE457837B (sv) | 1989-01-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |