CA1162325A - Thyristor having a controllable emitter short circuit - Google Patents
Thyristor having a controllable emitter short circuitInfo
- Publication number
- CA1162325A CA1162325A CA000377509A CA377509A CA1162325A CA 1162325 A CA1162325 A CA 1162325A CA 000377509 A CA000377509 A CA 000377509A CA 377509 A CA377509 A CA 377509A CA 1162325 A CA1162325 A CA 1162325A
- Authority
- CA
- Canada
- Prior art keywords
- emitter
- thyristor
- electrode
- zone
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 238000000576 coating method Methods 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 10
- 230000006872 improvement Effects 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims 3
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- SILSDTWXNBZOGF-KUZBFYBWSA-N chembl111058 Chemical compound CCSC(C)CC1CC(O)=C(\C(CC)=N\OC\C=C\Cl)C(=O)C1 SILSDTWXNBZOGF-KUZBFYBWSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- QHGVXILFMXYDRS-UHFFFAOYSA-N pyraclofos Chemical compound C1=C(OP(=O)(OCC)SCCC)C=NN1C1=CC=C(Cl)C=C1 QHGVXILFMXYDRS-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
- H10D18/65—Gate-turn-off devices with turn-off by field effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/148—Cathode regions of thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/138—Thyristors having built-in components the built-in components being FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
- H10F30/263—Photothyristors
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEP3018542.3 | 1980-05-14 | ||
DE19803018542 DE3018542A1 (de) | 1980-05-14 | 1980-05-14 | Thyristor mit steuerbarem emitter-kurzschluss und verfahren zu seinem betrieb |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1162325A true CA1162325A (en) | 1984-02-14 |
Family
ID=6102449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA000377509A Expired CA1162325A (en) | 1980-05-14 | 1981-05-13 | Thyristor having a controllable emitter short circuit |
Country Status (4)
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3118318A1 (de) * | 1981-05-08 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | Lichtzuendbarer thyristor mit steuerbaren emitter-kurzschlusspfaden und verfahren zu seinem betrieb |
DE3226624A1 (de) * | 1982-07-16 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf und hoher kritischer spannungsanstiegsgeschwindigkeit |
JPS5927569A (ja) * | 1982-08-06 | 1984-02-14 | Hitachi Ltd | 半導体スイツチ素子 |
DE3230760A1 (de) * | 1982-08-18 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Abschaltbarer thyristor |
DE3855922T2 (de) * | 1987-02-26 | 1998-01-02 | Toshiba Kawasaki Kk | An-Steuertechnik für Thyristor mit isolierter Steuerelektrode |
FR2864343A1 (fr) * | 2003-12-19 | 2005-06-24 | St Microelectronics Sa | Triac fonctionnant dans les quadrants q1 et q4 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE572049A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1957-12-03 | 1900-01-01 | ||
US3035186A (en) * | 1959-06-15 | 1962-05-15 | Bell Telephone Labor Inc | Semiconductor switching apparatus |
NL293292A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1962-06-11 | |||
US3391310A (en) * | 1964-01-13 | 1968-07-02 | Gen Electric | Semiconductor switch |
US3700982A (en) * | 1968-08-12 | 1972-10-24 | Int Rectifier Corp | Controlled rectifier having gate electrode which extends across the gate and cathode layers |
US4089024A (en) * | 1972-09-20 | 1978-05-09 | Hitachi, Ltd. | Semiconductor switching device |
US3812405A (en) * | 1973-01-29 | 1974-05-21 | Motorola Inc | Stable thyristor device |
JPS5629458B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1973-07-02 | 1981-07-08 | ||
US4163241A (en) * | 1975-06-13 | 1979-07-31 | Hutson Jearld L | Multiple emitter and normal gate semiconductor switch |
SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
JPS6040190B2 (ja) * | 1976-07-21 | 1985-09-10 | 日本インタ−ナシヨナル整流器株式会社 | 半導体制御整流素子 |
US4323793A (en) * | 1978-09-27 | 1982-04-06 | Eaton Corporation | Thyristor having widened region of temperature sensitivity with respect to breakover voltage |
US4295058A (en) * | 1979-06-07 | 1981-10-13 | Eaton Corporation | Radiant energy activated semiconductor switch |
-
1980
- 1980-05-14 DE DE19803018542 patent/DE3018542A1/de active Granted
-
1981
- 1981-04-17 US US06/255,175 patent/US4419683A/en not_active Expired - Fee Related
- 1981-05-13 JP JP7208881A patent/JPS575360A/ja active Pending
- 1981-05-13 CA CA000377509A patent/CA1162325A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US4419683A (en) | 1983-12-06 |
DE3018542A1 (de) | 1981-11-19 |
DE3018542C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-03-02 |
JPS575360A (en) | 1982-01-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MKEX | Expiry |