CA1162325A - Thyristor having a controllable emitter short circuit - Google Patents

Thyristor having a controllable emitter short circuit

Info

Publication number
CA1162325A
CA1162325A CA000377509A CA377509A CA1162325A CA 1162325 A CA1162325 A CA 1162325A CA 000377509 A CA000377509 A CA 000377509A CA 377509 A CA377509 A CA 377509A CA 1162325 A CA1162325 A CA 1162325A
Authority
CA
Canada
Prior art keywords
emitter
thyristor
electrode
zone
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000377509A
Other languages
English (en)
French (fr)
Inventor
Helmut Herberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA1162325A publication Critical patent/CA1162325A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/60Gate-turn-off devices 
    • H10D18/65Gate-turn-off devices  with turn-off by field effect 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148Cathode regions of thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131Thyristors having built-in components
    • H10D84/138Thyristors having built-in components the built-in components being FETs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263Photothyristors

Landscapes

  • Thyristors (AREA)
CA000377509A 1980-05-14 1981-05-13 Thyristor having a controllable emitter short circuit Expired CA1162325A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP3018542.3 1980-05-14
DE19803018542 DE3018542A1 (de) 1980-05-14 1980-05-14 Thyristor mit steuerbarem emitter-kurzschluss und verfahren zu seinem betrieb

Publications (1)

Publication Number Publication Date
CA1162325A true CA1162325A (en) 1984-02-14

Family

ID=6102449

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000377509A Expired CA1162325A (en) 1980-05-14 1981-05-13 Thyristor having a controllable emitter short circuit

Country Status (4)

Country Link
US (1) US4419683A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS575360A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1162325A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3018542A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3118318A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit steuerbaren emitter-kurzschlusspfaden und verfahren zu seinem betrieb
DE3226624A1 (de) * 1982-07-16 1984-01-19 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf und hoher kritischer spannungsanstiegsgeschwindigkeit
JPS5927569A (ja) * 1982-08-06 1984-02-14 Hitachi Ltd 半導体スイツチ素子
DE3230760A1 (de) * 1982-08-18 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Abschaltbarer thyristor
DE3855922T2 (de) * 1987-02-26 1998-01-02 Toshiba Kawasaki Kk An-Steuertechnik für Thyristor mit isolierter Steuerelektrode
FR2864343A1 (fr) * 2003-12-19 2005-06-24 St Microelectronics Sa Triac fonctionnant dans les quadrants q1 et q4

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE572049A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1957-12-03 1900-01-01
US3035186A (en) * 1959-06-15 1962-05-15 Bell Telephone Labor Inc Semiconductor switching apparatus
NL293292A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1962-06-11
US3391310A (en) * 1964-01-13 1968-07-02 Gen Electric Semiconductor switch
US3700982A (en) * 1968-08-12 1972-10-24 Int Rectifier Corp Controlled rectifier having gate electrode which extends across the gate and cathode layers
US4089024A (en) * 1972-09-20 1978-05-09 Hitachi, Ltd. Semiconductor switching device
US3812405A (en) * 1973-01-29 1974-05-21 Motorola Inc Stable thyristor device
JPS5629458B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-07-02 1981-07-08
US4163241A (en) * 1975-06-13 1979-07-31 Hutson Jearld L Multiple emitter and normal gate semiconductor switch
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
JPS6040190B2 (ja) * 1976-07-21 1985-09-10 日本インタ−ナシヨナル整流器株式会社 半導体制御整流素子
US4323793A (en) * 1978-09-27 1982-04-06 Eaton Corporation Thyristor having widened region of temperature sensitivity with respect to breakover voltage
US4295058A (en) * 1979-06-07 1981-10-13 Eaton Corporation Radiant energy activated semiconductor switch

Also Published As

Publication number Publication date
US4419683A (en) 1983-12-06
DE3018542A1 (de) 1981-11-19
DE3018542C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-03-02
JPS575360A (en) 1982-01-12

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Legal Events

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