CA1145483A - Accelerated particle lithographic processing and articles so produced - Google Patents

Accelerated particle lithographic processing and articles so produced

Info

Publication number
CA1145483A
CA1145483A CA000352644A CA352644A CA1145483A CA 1145483 A CA1145483 A CA 1145483A CA 000352644 A CA000352644 A CA 000352644A CA 352644 A CA352644 A CA 352644A CA 1145483 A CA1145483 A CA 1145483A
Authority
CA
Canada
Prior art keywords
article
etching
ion
sensitivity
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000352644A
Other languages
English (en)
French (fr)
Inventor
Thomas M. Hall
Alfred Wagner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of CA1145483A publication Critical patent/CA1145483A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P76/2049—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2065—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam using corpuscular radiation other than electron beams

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
CA000352644A 1979-05-31 1980-05-23 Accelerated particle lithographic processing and articles so produced Expired CA1145483A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US4407379A 1979-05-31 1979-05-31
US044,073 1979-05-31

Publications (1)

Publication Number Publication Date
CA1145483A true CA1145483A (en) 1983-04-26

Family

ID=21930389

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000352644A Expired CA1145483A (en) 1979-05-31 1980-05-23 Accelerated particle lithographic processing and articles so produced

Country Status (7)

Country Link
EP (1) EP0029061B1 (enExample)
JP (1) JPH0536782B2 (enExample)
CA (1) CA1145483A (enExample)
DE (1) DE3069341D1 (enExample)
ES (1) ES8103477A1 (enExample)
IT (1) IT1130689B (enExample)
WO (1) WO1980002752A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5139925A (en) * 1989-10-18 1992-08-18 Massachusetts Institute Of Technology Surface barrier silylation of novolak film without photoactive additive patterned with 193 nm excimer laser
US5362606A (en) * 1989-10-18 1994-11-08 Massachusetts Institute Of Technology Positive resist pattern formation through focused ion beam exposure and surface barrier silylation
JPH04130619A (ja) * 1990-09-20 1992-05-01 Mitsubishi Electric Corp 半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3143423A (en) * 1962-04-02 1964-08-04 Eastman Kodak Co New photo-resist benzoylazide compositions
US3529960A (en) * 1967-01-24 1970-09-22 Hilbert Sloan Methods of treating resist coatings
US3770433A (en) * 1972-03-22 1973-11-06 Bell Telephone Labor Inc High sensitivity negative electron resist
JPS576578B2 (enExample) * 1973-11-05 1982-02-05
US4061799A (en) * 1973-11-05 1977-12-06 Texas Instruments Incorporated Method of patterning styrene diene block copolymer electron beam resists
JPS5738897B2 (enExample) * 1974-11-19 1982-08-18
DE3015866A1 (de) * 1979-04-24 1980-11-06 Westinghouse Electric Corp Verfahren zum lithographischen herstellen von lochmasken

Also Published As

Publication number Publication date
WO1980002752A1 (en) 1980-12-11
ES491874A0 (es) 1981-02-16
JPS56500627A (enExample) 1981-05-07
JPH0536782B2 (enExample) 1993-05-31
ES8103477A1 (es) 1981-02-16
EP0029061A1 (en) 1981-05-27
EP0029061A4 (en) 1982-07-13
DE3069341D1 (en) 1984-11-08
IT1130689B (it) 1986-06-18
IT8022403A0 (it) 1980-05-29
EP0029061B1 (en) 1984-10-03

Similar Documents

Publication Publication Date Title
US4405708A (en) Method of applying a resist pattern on a substrate, and resist material mixture
US4383026A (en) Accelerated particle lithographic processing and articles so produced
US4352870A (en) High resolution two-layer resists
US6017658A (en) Lithographic mask and method for fabrication thereof
JPS63271248A (ja) シリコン含有レジスト
US4101782A (en) Process for making patterns in resist and for making ion absorption masks useful therewith
CA1145483A (en) Accelerated particle lithographic processing and articles so produced
US4405707A (en) Method of producing relief structures for integrated semiconductor circuits
JP3433153B2 (ja) パターン形成材料、パターン形成方法、及び露光用マスクの製造方法
JPH035573B2 (enExample)
JPH02248952A (ja) 感光性組成物
KR20000023292A (ko) 레지스트 재료 및 패턴 형성 방법
JPS6248211B2 (enExample)
JPS6376438A (ja) パタ−ン形成方法
Okino et al. Investigation of proximity effect correction in electron projection lithography (EPL)
JPH07134416A (ja) 放射線感応性樹脂組成物
CA1155238A (en) High resolution two-layer resists
JPS6013432B2 (ja) Ａｌ又はＡｌ合金パタ−ンの形成方法
US4368215A (en) High resolution masking process for minimizing scattering and lateral deflection in collimated ion beams
JPS62212646A (ja) 感光性組成物
US4954424A (en) Pattern fabrication by radiation-induced graft copolymerization
JP2856593B2 (ja) レジストパターンの形成方法
JP3074676B2 (ja) ナノスケールレジスト材料を用いたパターン形成方法
JPH0147009B2 (enExample)
JPS6360376B2 (enExample)

Legal Events

Date Code Title Description
MKEX Expiry